{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,14]],"date-time":"2026-01-14T23:51:51Z","timestamp":1768434711231,"version":"3.49.0"},"reference-count":6,"publisher":"Springer Science and Business Media LLC","issue":"12","license":[{"start":{"date-parts":[[2023,10,7]],"date-time":"2023-10-07T00:00:00Z","timestamp":1696636800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2023,10,7]],"date-time":"2023-10-07T00:00:00Z","timestamp":1696636800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2023,12]]},"DOI":"10.1007\/s11432-021-3544-2","type":"journal-article","created":{"date-parts":[[2023,10,12]],"date-time":"2023-10-12T12:02:33Z","timestamp":1697112153000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes"],"prefix":"10.1007","volume":"66","author":[{"given":"Haoran","family":"Yu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tiancheng","family":"Gong","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Peng","family":"Yuan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuan","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhaomeng","family":"Gao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaoxin","family":"Xu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ying","family":"Sun","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ran","family":"Cheng","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jianfeng","family":"Gao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Junfeng","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bing","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qing","family":"Luo","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2023,10,7]]},"reference":[{"key":"3544_CR1","doi-asserted-by":"crossref","unstructured":"M\u00fcller J, Yurchuk E, Schl\u00f6sser T, et al. Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG. In: Proceedings of 2012 Symposium on VLSI Technology (VLSIT), 2012","DOI":"10.1109\/VLSIT.2012.6242443"},{"key":"3544_CR2","doi-asserted-by":"publisher","first-page":"1391","DOI":"10.1038\/s41467-020-15159-2","volume":"11","author":"Q Luo","year":"2020","unstructured":"Luo Q, Cheng Y, Yang J, et al. A highly CMOS compatible hafnia-based ferroelectric diode. Nat Commun, 2020, 11: 1391","journal-title":"Nat Commun"},{"key":"3544_CR3","doi-asserted-by":"publisher","first-page":"652","DOI":"10.1016\/j.microrel.2010.01.046","volume":"50","author":"J S Meena","year":"2010","unstructured":"Meena J S, Chu M C, Tiwari J N, et al. Flexible metal-insulator-metal capacitor using plasma enhanced binary hafnium-zirconium-oxide as gate dielectric layer. Microelectron Reliability, 2010, 50: 652\u2013656","journal-title":"Microelectron Reliability"},{"key":"3544_CR4","doi-asserted-by":"publisher","first-page":"3990","DOI":"10.1109\/TED.2022.3172244","volume":"69","author":"S Jindal","year":"2022","unstructured":"Jindal S, Manhas S K, Balatti S, et al. Temperature-dependent field cycling behavior of ferroelectric hafnium zirconium oxide (HZO) MFM capacitors. IEEE Trans Electron Devices, 2022, 69: 3990\u20133996","journal-title":"IEEE Trans Electron Devices"},{"key":"3544_CR5","doi-asserted-by":"publisher","first-page":"137818","DOI":"10.1016\/j.tsf.2020.137818","volume":"697","author":"W C Y Ma","year":"2020","unstructured":"Ma W C Y, Li M J, Luo S M, et al. Gate capacitance effect on P-type tunnel thin-film transistor with TiN\/HfZrO2 gate stack. Thin Solid Films, 2020, 697: 137818","journal-title":"Thin Solid Films"},{"key":"3544_CR6","doi-asserted-by":"publisher","first-page":"569","DOI":"10.1002\/crat.200610865","volume":"42","author":"M A Gaffar","year":"2007","unstructured":"Gaffar M A, El-Fadl A A, Anooz S B. Doping-induced-effects on conduction mechanisms in incommensurate ammonium zinc chloride crystals. Cryst Res Technol, 2007, 42: 569\u2013577","journal-title":"Cryst Res Technol"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-021-3544-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-021-3544-2\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-021-3544-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,1,18]],"date-time":"2025-01-18T20:47:55Z","timestamp":1737233275000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-021-3544-2"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,10,7]]},"references-count":6,"journal-issue":{"issue":"12","published-print":{"date-parts":[[2023,12]]}},"alternative-id":["3544"],"URL":"https:\/\/doi.org\/10.1007\/s11432-021-3544-2","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,10,7]]},"assertion":[{"value":"14 June 2022","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"23 June 2022","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"4 July 2022","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"7 October 2023","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"229403"}}