{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,8]],"date-time":"2025-11-08T13:41:07Z","timestamp":1762609267569},"reference-count":35,"publisher":"Springer Science and Business Media LLC","issue":"6","license":[{"start":{"date-parts":[[2023,4,4]],"date-time":"2023-04-04T00:00:00Z","timestamp":1680566400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2023,4,4]],"date-time":"2023-04-04T00:00:00Z","timestamp":1680566400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2023,6]]},"DOI":"10.1007\/s11432-021-3562-8","type":"journal-article","created":{"date-parts":[[2023,4,11]],"date-time":"2023-04-11T12:03:01Z","timestamp":1681214581000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":6,"title":["Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory"],"prefix":"10.1007","volume":"66","author":[{"given":"Yan","family":"Huang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kaihua","family":"Cao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kun","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jinkai","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kewen","family":"Shi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zuolei","family":"Hao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wenlong","family":"Cai","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ao","family":"Du","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jialiang","family":"Yin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qing","family":"Yang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Junfeng","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jianfeng","family":"Gao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chao","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Weisheng","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2023,4,4]]},"reference":[{"key":"3562_CR1","doi-asserted-by":"publisher","first-page":"060424","DOI":"10.1007\/s11432-017-9313-6","volume":"61","author":"Y Li","year":"2018","unstructured":"Li Y, Zhou Y, Wang Z, et al. Memcomputing: fusion of memory and computing. Sci China Inf Sci, 2018, 61: 060424","journal-title":"Sci China Inf Sci"},{"key":"3562_CR2","doi-asserted-by":"publisher","first-page":"160402","DOI":"10.1007\/s11432-021-3220-0","volume":"64","author":"H Cai","year":"2021","unstructured":"Cai H, Liu B, Chen J, et al. A survey of in-spin transfer torque MRAM computing. Sci China Inf Sci, 2021, 64: 160402","journal-title":"Sci China Inf Sci"},{"key":"3562_CR3","doi-asserted-by":"publisher","first-page":"1600090","DOI":"10.1002\/aelm.201600090","volume":"2","author":"D S Jeong","year":"2016","unstructured":"Jeong D S, Kim K M, Kim S, et al. Memristors for energy-efficient new computing paradigms. Adv Electron Mater, 2016, 2: 1600090","journal-title":"Adv Electron Mater"},{"key":"3562_CR4","doi-asserted-by":"publisher","first-page":"485","DOI":"10.1038\/nature02014","volume":"425","author":"A Ney","year":"2003","unstructured":"Ney A, Pampuch C, Koch R, et al. Programmable computing with a single magnetoresistive element. Nature, 2003, 425: 485\u2013487","journal-title":"Nature"},{"key":"3562_CR5","doi-asserted-by":"publisher","first-page":"191","DOI":"10.1038\/nnano.2015.29","volume":"10","author":"H S P Wong","year":"2015","unstructured":"Wong H S P, Salahuddin S. Memory leads the way to better computing. Nat Nanotech, 2015, 10: 191\u2013194","journal-title":"Nat Nanotech"},{"key":"3562_CR6","doi-asserted-by":"publisher","first-page":"179","DOI":"10.1109\/LED.2016.2645946","volume":"38","author":"Z R Wang","year":"2017","unstructured":"Wang Z R, Su Y T, Li Y, et al. Functionally complete Boolean logic in 1T1R resistive random access memory. IEEE Electron Dev Lett, 2017, 38: 179\u2013182","journal-title":"IEEE Electron Dev Lett"},{"key":"3562_CR7","doi-asserted-by":"publisher","first-page":"1398","DOI":"10.1109\/JPROC.2021.3084997","volume":"109","author":"Z Guo","year":"2021","unstructured":"Guo Z, Yin J, Bai Y, et al. Spintronics for energy-efficient computing: an overview and outlook. Proc IEEE, 2021, 109: 1398\u20131417","journal-title":"Proc IEEE"},{"key":"3562_CR8","doi-asserted-by":"publisher","first-page":"202401","DOI":"10.1007\/s11432-020-2866-0","volume":"63","author":"R Yuan","year":"2020","unstructured":"Yuan R, Ma M, Xu L, et al. Efficient 16 Boolean logic and arithmetic based on bipolar oxide memristors. Sci China Inf Sci, 2020, 63: 202401","journal-title":"Sci China Inf Sci"},{"key":"3562_CR9","doi-asserted-by":"publisher","first-page":"641","DOI":"10.1038\/s41586-020-1942-4","volume":"577","author":"P Yao","year":"2020","unstructured":"Yao P, Wu H, Gao B, et al. Fully hardware-implemented memristor convolutional neural network. Nature, 2020, 577: 641\u2013646","journal-title":"Nature"},{"key":"3562_CR10","doi-asserted-by":"publisher","first-page":"408","DOI":"10.1038\/s41467-020-20692-1","volume":"12","author":"Y Zhong","year":"2021","unstructured":"Zhong Y, Tang J, Li X, et al. Dynamic memristor-based reservoir computing for high-efficiency temporal signal processing. Nat Commun, 2021, 12: 408","journal-title":"Nat Commun"},{"key":"3562_CR11","doi-asserted-by":"publisher","first-page":"784","DOI":"10.1109\/LED.2020.2983735","volume":"41","author":"Q Luo","year":"2020","unstructured":"Luo Q, Guo Z, Zhang S, et al. Crack-based complementary nanoelectromechanical switches for reconfigurable computing. IEEE Electron Dev Lett, 2020, 41: 784\u2013787","journal-title":"IEEE Electron Dev Lett"},{"key":"3562_CR12","doi-asserted-by":"publisher","first-page":"2100023","DOI":"10.1002\/aelm.202100023","volume":"7","author":"Z Guo","year":"2021","unstructured":"Guo Z, Guan Y, Luo Q, et al. Ferroelectric-nanocrack switches for memory and complementary logic with zero off-current and low operating voltage. Adv Electron Mater, 2021, 7: 2100023","journal-title":"Adv Electron Mater"},{"key":"3562_CR13","doi-asserted-by":"publisher","first-page":"873","DOI":"10.1038\/nature08940","volume":"464","author":"J Borghetti","year":"2010","unstructured":"Borghetti J, Snider G S, Kuekes P J, et al. \u2018Memristive\u2019 switches enable \u2018stateful\u2019 logic operations via material implication. Nature, 2010, 464: 873\u2013876","journal-title":"Nature"},{"key":"3562_CR14","doi-asserted-by":"publisher","first-page":"5975","DOI":"10.1002\/adma.201301940","volume":"25","author":"M Cassinerio","year":"2013","unstructured":"Cassinerio M, Ciocchini N, Ielmini D. Logic computation in phase change materials by threshold and memory switching. Adv Mater, 2013, 25: 5975\u20135980","journal-title":"Adv Mater"},{"key":"3562_CR15","doi-asserted-by":"publisher","first-page":"1951","DOI":"10.1109\/JPROC.2012.2190369","volume":"100","author":"H S P Wong","year":"2012","unstructured":"Wong H S P, Lee H Y, Yu S, et al. Metal-oxide RRAM. Proc IEEE, 2012, 100: 1951\u20131970","journal-title":"Proc IEEE"},{"key":"3562_CR16","doi-asserted-by":"publisher","first-page":"703","DOI":"10.1109\/JPROC.2003.811804","volume":"91","author":"S Tehrani","year":"2003","unstructured":"Tehrani S, Slaughter J M, Deherrera M, et al. Magnetoresistive random access memory using magnetic tunnel junctions. Proc IEEE, 2003, 91: 703\u2013714","journal-title":"Proc IEEE"},{"key":"3562_CR17","doi-asserted-by":"publisher","first-page":"352003","DOI":"10.1088\/1361-6528\/ab2084","volume":"30","author":"S Slesazeck","year":"2019","unstructured":"Slesazeck S, Mikolajick T. Nanoscale resistive switching memory devices: a review. Nanotechnology, 2019, 30: 352003","journal-title":"Nanotechnology"},{"key":"3562_CR18","doi-asserted-by":"publisher","first-page":"023003","DOI":"10.1088\/1361-6463\/aae223","volume":"52","author":"H Jeong","year":"2019","unstructured":"Jeong H, Shi L. Memristor devices for neural networks. J Phys D-Appl Phys, 2019, 52: 023003","journal-title":"J Phys D-Appl Phys"},{"key":"3562_CR19","doi-asserted-by":"publisher","first-page":"991","DOI":"10.1109\/TED.2007.894617","volume":"54","author":"S Ikeda","year":"2007","unstructured":"Ikeda S, Hayakawa J, Lee Y M, et al. Magnetic tunnel junctions for spintronic memories and beyond. IEEE Trans Electron Dev, 2007, 54: 991\u20131002","journal-title":"IEEE Trans Electron Dev"},{"key":"3562_CR20","doi-asserted-by":"publisher","first-page":"152504","DOI":"10.1063\/1.3499427","volume":"97","author":"A Lyle","year":"2010","unstructured":"Lyle A, Harms J, Patil S, et al. Direct communication between magnetic tunnel junctions for nonvolatile logic fan-out architecture. Appl Phys Lett, 2010, 97: 152504","journal-title":"Appl Phys Lett"},{"key":"3562_CR21","doi-asserted-by":"publisher","first-page":"12819","DOI":"10.1039\/C6NR03169B","volume":"8","author":"S Gao","year":"2016","unstructured":"Gao S, Yang G, Cui B, et al. Realisation of all 16 Boolean logic functions in a single magnetoresistance memory cell. Nanoscale, 2016, 8: 12819\u201312825","journal-title":"Nanoscale"},{"key":"3562_CR22","doi-asserted-by":"publisher","first-page":"928","DOI":"10.1109\/LED.2020.2987211","volume":"41","author":"K Zhang","year":"2020","unstructured":"Zhang K, Cao K, Zhang Y, et al. Rectified tunnel magnetoresistance device with high on\/off ratio for in-memory computing. IEEE Electron Dev Lett, 2020, 41: 928\u2013931","journal-title":"IEEE Electron Dev Lett"},{"key":"3562_CR23","doi-asserted-by":"publisher","first-page":"187","DOI":"10.1038\/nnano.2015.24","volume":"10","author":"A D Kent","year":"2015","unstructured":"Kent A D, Worledge D C. A new spin on magnetic memories. Nat Nanotech, 2015, 10: 187\u2013191","journal-title":"Nat Nanotech"},{"key":"3562_CR24","doi-asserted-by":"publisher","first-page":"25","DOI":"10.1016\/j.sse.2016.07.006","volume":"125","author":"A Chen","year":"2016","unstructured":"Chen A. A review of emerging non-volatile memory (NVM) technologies and applications. Solid-State Electron, 2016, 125: 25\u201338","journal-title":"Solid-State Electron"},{"key":"3562_CR25","doi-asserted-by":"publisher","first-page":"582","DOI":"10.1038\/s41928-018-0160-7","volume":"1","author":"M Wang","year":"2018","unstructured":"Wang M, Cai W, Zhu D, et al. Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin-orbit and spin-transfer torques. Nat Electron, 2018, 1: 582\u2013588","journal-title":"Nat Electron"},{"key":"3562_CR26","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1145\/2463585.2463589","volume":"9","author":"D Apalkov","year":"2013","unstructured":"Apalkov D, Khvalkovskiy A, Watts S, et al. Spin-transfer torque magnetic random access memory (STT-MRAM). J Emerg Technol Comput Syst, 2013, 9: 1\u201335","journal-title":"J Emerg Technol Comput Syst"},{"key":"3562_CR27","doi-asserted-by":"publisher","first-page":"21225","DOI":"10.1039\/C8NR05928D","volume":"10","author":"K Cao","year":"2018","unstructured":"Cao K, Cai W, Liu Y, et al. In-memory direct processing based on nanoscale perpendicular magnetic tunnel junctions. Nanoscale, 2018, 10: 21225\u201321230","journal-title":"Nanoscale"},{"key":"3562_CR28","doi-asserted-by":"publisher","first-page":"671","DOI":"10.1038\/s41467-018-03140-z","volume":"9","author":"M Wang","year":"2018","unstructured":"Wang M, Cai W, Cao K, et al. Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance. Nat Commun, 2018, 9: 671","journal-title":"Nat Commun"},{"key":"3562_CR29","doi-asserted-by":"publisher","first-page":"1900134","DOI":"10.1002\/aelm.201900134","volume":"5","author":"S Peng","year":"2019","unstructured":"Peng S, Zhu D, Zhou J, et al. Modulation of heavy metal\/ferromagnetic metal interface for high-performance spintronic devices. Adv Electron Mater, 2019, 5: 1900134","journal-title":"Adv Electron Mater"},{"key":"3562_CR30","doi-asserted-by":"publisher","unstructured":"Zhao Y, Yang J, Li B, et al. NAND-SPIN-based processing-in-MRAM architecture for convolutional neural network acceleration. Sci China Inf Sci, 2022. doi: https:\/\/doi.org\/10.1007\/s11432-021-3472-9","DOI":"10.1007\/s11432-021-3472-9"},{"key":"3562_CR31","doi-asserted-by":"publisher","first-page":"704","DOI":"10.1109\/LED.2021.3069391","volume":"42","author":"W Cai","year":"2021","unstructured":"Cai W, Shi K, Zhuo Y, et al. Sub-ns field-free switching in perpendicular magnetic tunnel junctions by the interplay of spin transfer and orbit torques. IEEE Electron Dev Lett, 2021, 42: 704\u2013707","journal-title":"IEEE Electron Dev Lett"},{"key":"3562_CR32","first-page":"443","volume":"61","author":"W Zhao","year":"2014","unstructured":"Zhao W, Moreau M, Deng E, et al. Synchronous non-volatile logic gate design based on resistive switching memories. IEEE Trans Circ Syst I, 2014, 61: 443\u2013454","journal-title":"IEEE Trans Circ Syst I"},{"key":"3562_CR33","doi-asserted-by":"publisher","first-page":"234503","DOI":"10.1063\/1.4852995","volume":"114","author":"Y Li","year":"2013","unstructured":"Li Y, Zhong Y P, Deng Y F, et al. Nonvolatile \u201cAND,\u201d \u201cOR,\u201d and \u201cNOT\u201d Boolean logic gates based on phase-change memory. J Appl Phys, 2013, 114: 234503","journal-title":"J Appl Phys"},{"key":"3562_CR34","doi-asserted-by":"publisher","first-page":"122406","DOI":"10.1007\/s11432-020-3189-x","volume":"65","author":"W Cai","year":"2022","unstructured":"Cai W, Wang M, Cao K, et al. Stateful implication logic based on perpendicular magnetic tunnel junctions. Sci China Inf Sci, 2022, 65: 122406","journal-title":"Sci China Inf Sci"},{"key":"3562_CR35","doi-asserted-by":"publisher","first-page":"1420","DOI":"10.1109\/TED.2019.2961505","volume":"67","author":"Y Chen","year":"2020","unstructured":"Chen Y. ReRAM: history, status, and future. IEEE Trans Electron Dev, 2020, 67: 1420\u20131433","journal-title":"IEEE Trans Electron Dev"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-021-3562-8.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-021-3562-8\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-021-3562-8.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,7,19]],"date-time":"2024-07-19T20:21:46Z","timestamp":1721420506000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-021-3562-8"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,4,4]]},"references-count":35,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2023,6]]}},"alternative-id":["3562"],"URL":"https:\/\/doi.org\/10.1007\/s11432-021-3562-8","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,4,4]]},"assertion":[{"value":"7 August 2021","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"7 April 2022","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"26 July 2022","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"4 April 2023","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"162402"}}