{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,7]],"date-time":"2026-01-07T08:11:52Z","timestamp":1767773512006},"reference-count":7,"publisher":"Springer Science and Business Media LLC","issue":"5","license":[{"start":{"date-parts":[[2023,4,4]],"date-time":"2023-04-04T00:00:00Z","timestamp":1680566400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2023,4,4]],"date-time":"2023-04-04T00:00:00Z","timestamp":1680566400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2023,5]]},"DOI":"10.1007\/s11432-022-3501-7","type":"journal-article","created":{"date-parts":[[2023,4,12]],"date-time":"2023-04-12T07:03:03Z","timestamp":1681282983000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Modeling and physical mechanism analysis of the effect of a polycrystalline-ferroelectric gate on FE-FinFETs"],"prefix":"10.1007","volume":"66","author":[{"given":"Chengxu","family":"Wang","sequence":"first","affiliation":[]},{"given":"Hao","family":"Yu","sequence":"additional","affiliation":[]},{"given":"Yichen","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Zichong","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Xiangshui","family":"Miao","sequence":"additional","affiliation":[]},{"given":"Xingsheng","family":"Wang","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2023,4,4]]},"reference":[{"key":"3501_CR1","doi-asserted-by":"publisher","first-page":"588","DOI":"10.1038\/s41928-020-00492-7","volume":"3","author":"A I Khan","year":"2020","unstructured":"Khan A I, Keshavarzi A, Datta S. The future of ferroelectric field-effect transistor technology. Nat Electron, 2020, 3: 588\u2013597","journal-title":"Nat Electron"},{"key":"3501_CR2","doi-asserted-by":"publisher","first-page":"478","DOI":"10.1038\/s41586-020-2208-x","volume":"580","author":"S S Cheema","year":"2020","unstructured":"Cheema S S, Kwon D, Shanker N, et al. Enhanced ferroelectricity in ultrathin films grown directly on silicon. Nature, 2020, 580: 478\u2013482","journal-title":"Nature"},{"key":"3501_CR3","doi-asserted-by":"crossref","unstructured":"Krivokapic Z, Rana U, Galatage R, et al. 14 nm ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2017. 11\u201314","DOI":"10.1109\/IEDM.2017.8268393"},{"key":"3501_CR4","doi-asserted-by":"publisher","first-page":"222902","DOI":"10.1063\/1.5129318","volume":"115","author":"M Lederer","year":"2019","unstructured":"Lederer M, K\u00e4mpfe T, Olivo R, et al. Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD. Appl Phys Lett, 2019, 115: 222902","journal-title":"Appl Phys Lett"},{"key":"3501_CR5","doi-asserted-by":"crossref","unstructured":"Lin Y-K, Kao M-Y, Agarwal H, et al. Effect of polycrystallinity and presence of dielectric phases on NC-FinFET variability. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2018. 1\u20134","DOI":"10.1109\/IEDM.2018.8614704"},{"key":"3501_CR6","doi-asserted-by":"publisher","first-page":"191","DOI":"10.1016\/0021-9991(83)90087-6","volume":"51","author":"M Tanemura","year":"1983","unstructured":"Tanemura M, Ogawa T, Ogita N. A new algorithm for three-dimensional Voronoi tessellation. J Comput Phys, 1983, 51: 191\u2013207","journal-title":"J Comput Phys"},{"key":"3501_CR7","doi-asserted-by":"crossref","unstructured":"Tang Y-T, Su C-J, Wang Y-S, et al. A comprehensive study of polymorphic phase distribution of ferroelectric-dielectrics and interfacial layer effects on negative capacitance FETs for Sub-5 nm node. In: Proceedings of IEEE Symposium on VLSI Technology, 2018. 45\u201346","DOI":"10.1109\/VLSIT.2018.8510696"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-022-3501-7.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-022-3501-7\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-022-3501-7.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,6,18]],"date-time":"2024-06-18T20:15:38Z","timestamp":1718741738000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-022-3501-7"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,4,4]]},"references-count":7,"journal-issue":{"issue":"5","published-print":{"date-parts":[[2023,5]]}},"alternative-id":["3501"],"URL":"https:\/\/doi.org\/10.1007\/s11432-022-3501-7","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,4,4]]},"assertion":[{"value":"16 January 2022","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"16 March 2022","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"17 May 2022","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"4 April 2023","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"159403"}}