{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,14]],"date-time":"2026-01-14T00:16:29Z","timestamp":1768349789030,"version":"3.49.0"},"reference-count":7,"publisher":"Springer Science and Business Media LLC","issue":"6","license":[{"start":{"date-parts":[[2023,4,4]],"date-time":"2023-04-04T00:00:00Z","timestamp":1680566400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2023,4,4]],"date-time":"2023-04-04T00:00:00Z","timestamp":1680566400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2023,6]]},"DOI":"10.1007\/s11432-022-3520-8","type":"journal-article","created":{"date-parts":[[2023,4,20]],"date-time":"2023-04-20T14:18:53Z","timestamp":1682000333000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity"],"prefix":"10.1007","volume":"66","author":[{"given":"Ren","family":"Huang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Weihang","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jincheng","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chunxu","family":"Su","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xi","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Liyu","family":"Fu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yue","family":"Hao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2023,4,4]]},"reference":[{"key":"3520_CR1","doi-asserted-by":"publisher","first-page":"1035","DOI":"10.1109\/LED.2013.2267933","volume":"34","author":"S Lenci","year":"2013","unstructured":"Lenci S, de Jaeger B, Carbonell L, et al. Au-free Al-GaN\/GaN power diode on 8-in Si substrate with gated edge termination. IEEE Electron Device Lett, 2013, 34: 1035\u20131037","journal-title":"IEEE Electron Device Lett"},{"key":"3520_CR2","doi-asserted-by":"publisher","first-page":"997","DOI":"10.1109\/TED.2016.2515566","volume":"63","author":"J Hu","year":"2016","unstructured":"Hu J, Stoffels S, Lenci S, et al. Performance optimization of au-free lateral AlGaN\/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate. IEEE Trans Electron Devices, 2016, 63: 997\u20131004","journal-title":"IEEE Trans Electron Devices"},{"key":"3520_CR3","doi-asserted-by":"crossref","unstructured":"Xiao M, Zhang W, Zhang Y, et al. Novel 2000 V normally-off MOS-HEMTs using AlN\/GaN superlattice channel. In: Proceedings of the 31st International Symposium on Power Semiconductor Devices and ICs, 2019. 471\u2013474","DOI":"10.1109\/ISPSD.2019.8757585"},{"key":"3520_CR4","doi-asserted-by":"publisher","first-page":"243505","DOI":"10.1063\/1.4811756","volume":"102","author":"J H Shin","year":"2013","unstructured":"Shin J H, Park J, Jang S Y, et al. Metal induced inhomogeneous Schottky barrier height in AlGaN\/GaN Schottky diode. Appl Phys Lett, 2013, 102: 243505","journal-title":"Appl Phys Lett"},{"key":"3520_CR5","doi-asserted-by":"publisher","first-page":"931","DOI":"10.1109\/JEDS.2018.2864720","volume":"6","author":"W Zhang","year":"2018","unstructured":"Zhang W, Zhang J, Xiao M, et al. High breakdown-voltage (>2200 V) AlGaN-channel HEMTs with ohmic\/Schottky hybrid drains. IEEE J Electron Devices Soc, 2018, 6: 931\u2013935","journal-title":"IEEE J Electron Devices Soc"},{"key":"3520_CR6","doi-asserted-by":"publisher","first-page":"107622","DOI":"10.1016\/j.sse.2019.107622","volume":"160","author":"J Liang","year":"2019","unstructured":"Liang J, Lai L, Zhou Z, et al. Trap-assisted tunneling current of ultrathin InAlN\/GaN HEMTs on Si (1 1 1) substrate. Solid-State Electron, 2019, 160: 107622","journal-title":"Solid-State Electron"},{"key":"3520_CR7","doi-asserted-by":"publisher","first-page":"535","DOI":"10.1063\/1.1644029","volume":"84","author":"E J Miller","year":"2004","unstructured":"Miller E J, Yu E T, Waltereit P, et al. Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy. Appl Phys Lett, 2004, 84: 535\u2013537","journal-title":"Appl Phys Lett"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-022-3520-8.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-022-3520-8\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-022-3520-8.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,7,19]],"date-time":"2024-07-19T20:22:07Z","timestamp":1721420527000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-022-3520-8"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,4,4]]},"references-count":7,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2023,6]]}},"alternative-id":["3520"],"URL":"https:\/\/doi.org\/10.1007\/s11432-022-3520-8","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,4,4]]},"assertion":[{"value":"13 January 2022","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"18 March 2022","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"15 June 2022","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"4 April 2023","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"169404"}}