{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,2]],"date-time":"2025-08-02T05:09:33Z","timestamp":1754111373436},"reference-count":38,"publisher":"Springer Science and Business Media LLC","issue":"5","license":[{"start":{"date-parts":[[2023,4,17]],"date-time":"2023-04-17T00:00:00Z","timestamp":1681689600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2023,4,17]],"date-time":"2023-04-17T00:00:00Z","timestamp":1681689600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2023,5]]},"DOI":"10.1007\/s11432-022-3669-5","type":"journal-article","created":{"date-parts":[[2023,4,22]],"date-time":"2023-04-22T10:02:07Z","timestamp":1682157727000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["High-speed optoelectronic devices"],"prefix":"10.1007","volume":"66","author":[{"given":"Yi","family":"Luo","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Changzheng","family":"Sun","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bing","family":"Xiong","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jian","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhibiao","family":"Hao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yanjun","family":"Han","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hongtao","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lai","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2023,4,17]]},"reference":[{"key":"3669_CR1","doi-asserted-by":"publisher","first-page":"2327","DOI":"10.1063\/1.1661499","volume":"43","author":"H Kogelnik","year":"1972","unstructured":"Kogelnik H, Shank C V. Coupled-wave theory of distributed feedback lasers. J Appl Phys, 1972, 43: 2327\u20132335","journal-title":"J Appl Phys"},{"key":"3669_CR2","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4613-0481-4","volume-title":"Semiconductor Lasers","author":"G P Agrawal","year":"1993","unstructured":"Agrawal G P, Dutta N K. Semiconductor Lasers. 2nd ed. New York: Van Nostrand Reinhold, 1993","edition":"2nd ed."},{"key":"3669_CR3","doi-asserted-by":"publisher","first-page":"532","DOI":"10.1109\/JQE.1976.1069214","volume":"12","author":"H A Haus","year":"1976","unstructured":"Haus H A, Shank C V. Antisymmetric taper of distributed feedback lasers. IEEE J Quantum Electron, 1976, 12: 532\u2013539","journal-title":"IEEE J Quantum Electron"},{"key":"3669_CR4","doi-asserted-by":"publisher","first-page":"326","DOI":"10.1049\/el:19840221","volume":"20","author":"K Utaka","year":"1984","unstructured":"Utaka K, Akiba S, Sakai K, et al. Analysis of quarter-wave-shifted DFB laser. Electron Lett, 1984, 20: 326\u2013327","journal-title":"Electron Lett"},{"key":"3669_CR5","doi-asserted-by":"publisher","first-page":"804","DOI":"10.1109\/JQE.1987.1073454","volume":"23","author":"H Soda","year":"1987","unstructured":"Soda H, Kotaki Y, Sudo H, et al. Stability in single longitudinal mode operation in GaInAsP\/InP phase-adjusted DFB lasers. IEEE J Quantum Electron, 1987, 23: 804\u2013814","journal-title":"IEEE J Quantum Electron"},{"key":"3669_CR6","doi-asserted-by":"publisher","first-page":"66","DOI":"10.1109\/JQE.1982.1071364","volume":"18","author":"E Kapon","year":"1982","unstructured":"Kapon E, Katzir A, Hardy A. The effect of complex coupling coefficients on distributed feedback lasers. IEEE J Quantum Electron, 1982, 18: 66\u201371","journal-title":"IEEE J Quantum Electron"},{"key":"3669_CR7","doi-asserted-by":"crossref","unstructured":"Luo Y, Nakano Y, Tada K. Fabrication and characteristics of a gain-coupled distributed-feedback laser diode. In: Proceedings of Extended Abstract of International Conference on Solid State Devices and Materials, Tokyo, 1988, 327\u2013330","DOI":"10.7567\/SSDM.1988.D-4-4"},{"key":"3669_CR8","doi-asserted-by":"publisher","first-page":"1724","DOI":"10.1109\/3.89997","volume":"27","author":"Y Luo","year":"1991","unstructured":"Luo Y, Inoue T, Hosomatsu H, et al. Fabrication and characteristics of gain-coupled distributed feedback semiconductor lasers with a corrugated active layer. IEEE J Quantum Electron, 1991, 27: 1724\u20131731","journal-title":"IEEE J Quantum Electron"},{"key":"3669_CR9","doi-asserted-by":"publisher","first-page":"17","DOI":"10.1109\/68.265876","volume":"6","author":"Y Luo","year":"1994","unstructured":"Luo Y, Si W M, Zhang S Z, et al. Fabrication of GaAlAs\/GaAs gain-coupled distributed feedback lasers using the nature of MBE. IEEE Photon Technol Lett, 1994, 6: 17\u201320","journal-title":"IEEE Photon Technol Lett"},{"key":"3669_CR10","first-page":"666","volume":"18","author":"P F Cai","year":"2007","unstructured":"Cai P F, Sun C Z, Xiong B, et al. High-speed direct modulated 1.5 \u00b5m uncooled AlGaInAs-InP MQW DFB lasers (in Chinese). J Optoelectron Laser, 2007, 18: 666\u2013668","journal-title":"J Optoelectron Laser"},{"key":"3669_CR11","doi-asserted-by":"publisher","DOI":"10.1002\/9781118148167","volume-title":"Diode Lasers and Photonic Integrated Circuits","author":"L A Coldren","year":"2012","unstructured":"Coldren L A, Corzine S W, Masnovic M L. Diode Lasers and Photonic Integrated Circuits. 2nd ed. Hoboken: John Wiley & Sons, 2012","edition":"2nd ed."},{"key":"3669_CR12","doi-asserted-by":"publisher","first-page":"821","DOI":"10.1049\/el:20020551","volume":"38","author":"J Shimizu","year":"2002","unstructured":"Shimizu J, Aoki M, Tsuchiya T, et al. Advantages of optical modulators with InGaAlSa\/InGaAlAs MQW structure. Electron Lett, 2002, 38: 821\u2013822","journal-title":"Electron Lett"},{"key":"3669_CR13","doi-asserted-by":"publisher","first-page":"L524","DOI":"10.1143\/JJAP.38.L524","volume":"38","author":"Y Luo","year":"1999","unstructured":"Luo Y, Wen G P, Sun C Z, et al. 2.5 Gb\/s electroabsorption modulator integrated with partially gain-coupled distributed feedback laser fabricated using a very simple device structure. Jpn J Appl Phys, 1999, 38: L524\u2013L526","journal-title":"Jpn J Appl Phys"},{"key":"3669_CR14","doi-asserted-by":"publisher","first-page":"L1071","DOI":"10.1143\/JJAP.45.L1071","volume":"45","author":"Y Luo","year":"2006","unstructured":"Luo Y, Xiong B, Wang J, et al. 40 GHz AlGaInAs multiple-quantum-well integrated electroabsorption modulator\/distributed feedback laser based on identical epitaxial layer scheme. Jpn J Appl Phys, 2006, 45: L1071\u2013L1073","journal-title":"Jpn J Appl Phys"},{"key":"3669_CR15","doi-asserted-by":"publisher","first-page":"664","DOI":"10.1143\/JJAP.46.L664","volume":"46","author":"P F Cai","year":"2007","unstructured":"Cai P F, Sun C Z, Xiong B, et al. 40 Gb\/s AlGaInAs electroabsorption modulated laser module based on identical epitaxial layer scheme. Jpn J Appl Phys, 2007, 46: 664\u2013666","journal-title":"Jpn J Appl Phys"},{"key":"3669_CR16","first-page":"656","volume":"E84-C","author":"C Z Sun","year":"2001","unstructured":"Sun C Z, Xiong B, Wen G P, et al. Influence of wavelength detuning on device performance of electroabsorption modulalor integrated distributed feedback lasers based on identical epitaxial layer approach. IEICE Trans Electron, 2001, E84-C: 656\u2013659","journal-title":"IEICE Trans Electron"},{"key":"3669_CR17","doi-asserted-by":"publisher","first-page":"1464","DOI":"10.1109\/JLT.2008.922164","volume":"26","author":"C Sun","year":"2008","unstructured":"Sun C, Xiong B, Wang J, et al. Fabrication and packaging of 40-Gb\/s AlGaInAs multiple-quantum-well electroabsorption modulated lasers based on identical epitaxial layer scheme. J Lightwave Technol, 2008, 26: 1464\u20131471","journal-title":"J Lightwave Technol"},{"key":"3669_CR18","doi-asserted-by":"publisher","first-page":"2970","DOI":"10.1109\/JLT.2008.2007654","volume":"27","author":"C Z Sun","year":"2009","unstructured":"Sun C Z, Xiong B, Wang J, et al. Influence of residual facet reflection on the eye-diagram performance of high-speed electroabsorption modulated lasers. J Lightwave Technol, 2009, 27: 2970\u20132976","journal-title":"J Lightwave Technol"},{"key":"3669_CR19","first-page":"1","volume":"25","author":"S Yang","year":"2019","unstructured":"Yang S, Sun C, Xiong B, et al. Gain-coupled 4 \u00d7 25 Gb\/s EML array based on an identical epitaxial layer integration scheme. IEEE J Sel Top Quantum Electron, 2019, 25: 1\u20136","journal-title":"IEEE J Sel Top Quantum Electron"},{"key":"3669_CR20","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1109\/JSTQE.2021.3087169","volume":"28","author":"S Yang","year":"2022","unstructured":"Yang S, Sun C, Xiong B, et al. Gain-coupled 4 \u00d7 56 Gb\/s EML array with optimized bonding-wire inductance. IEEE J Sel Top Quantum Electron, 2022, 28: 1\u20137","journal-title":"IEEE J Sel Top Quantum Electron"},{"key":"3669_CR21","doi-asserted-by":"publisher","first-page":"24894","DOI":"10.1364\/OE.21.024894","volume":"21","author":"X Zhao","year":"2013","unstructured":"Zhao X, Xiong B, Sun C, et al. Low drive voltage optical phase modulator with novel InGaAlAs\/InAlAs multiple-quantum-barrier based n-i-n heterostructure. Opt Express, 2013, 21: 24894\u201324903","journal-title":"Opt Express"},{"key":"3669_CR22","doi-asserted-by":"publisher","first-page":"1464","DOI":"10.1049\/el:20030939","volume":"39","author":"K Tsuzuki","year":"2003","unstructured":"Tsuzuki K, Ishibashi T, Ito T, et al. 40 Gbit\/s n-i-n InP Mach-Zehnder modulator with a voltage of 2.2 V. Electron Lett, 2003, 39: 1464\u20131465","journal-title":"Electron Lett"},{"key":"3669_CR23","doi-asserted-by":"publisher","first-page":"787","DOI":"10.1109\/LPT.2009.2018475","volume":"21","author":"N Kikuchi","year":"2009","unstructured":"Kikuchi N, Shibata Y, Tsuzuki K, et al. 80-Gb\/s low-driving-voltage InP DQPSK modulator with an n-p-i-n structure. IEEE Photon Technol Lett, 2009, 21: 787\u2013789","journal-title":"IEEE Photon Technol Lett"},{"key":"3669_CR24","doi-asserted-by":"crossref","unstructured":"Xing J, Sun C, Xiong B, et al. 40 GHz and 1.1-V V\u03c0 InP-based n-i-n EO modulator. In: Proceedings of Conference on Lasers and Electro-Optics (CLEO 2022), San Jose, 2022","DOI":"10.1364\/CLEO_SI.2022.SM3N.6"},{"key":"3669_CR25","doi-asserted-by":"publisher","first-page":"101","DOI":"10.1038\/s41586-018-0551-y","volume":"562","author":"C Wang","year":"2008","unstructured":"Wang C, Zhang M, Chen X, et al. Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages. Nature, 2008, 562: 101\u2013104","journal-title":"Nature"},{"key":"3669_CR26","doi-asserted-by":"crossref","unstructured":"Liu X, Xiong B, Sun C, et al. Low half-wave-voltage thin film LiNbO3 electro-optic modulator based on a compact electrode structure. In: Proceedings of Asia Communications and Photonics Conference (ACP\/IPOC 2020), Beijing, 2020","DOI":"10.1364\/ACPC.2020.M4A.144"},{"key":"3669_CR27","doi-asserted-by":"publisher","first-page":"357","DOI":"10.1364\/OPTICA.416155","volume":"8","author":"P Kharel","year":"2021","unstructured":"Kharel P, Reimer C, Luke K, et al. Breaking voltage-bandwidth limits in integrated lithium niobate modulators using micro-structured electrodes. Optica, 2021, 8: 357\u2013363","journal-title":"Optica"},{"key":"3669_CR28","doi-asserted-by":"publisher","first-page":"060016","DOI":"10.3788\/COL202119.060016","volume":"19","author":"X Liu","year":"2021","unstructured":"Liu X, Xiong B, Sun C, et al. Wideband thin-film lithium niobate modulator with low half-wave-voltage length product. Chin Opt Lett, 2021, 19: 060016","journal-title":"Chin Opt Lett"},{"key":"3669_CR29","doi-asserted-by":"publisher","first-page":"2940","DOI":"10.1364\/OL.426083","volume":"46","author":"J Hu","year":"2021","unstructured":"Hu J, Li C, Guo C, et al. Folded thin-film lithium niobate modulator based on a poled Mach-Zehnder interferometer structure. Opt Lett, 2021, 46: 2940\u20132943","journal-title":"Opt Lett"},{"key":"3669_CR30","doi-asserted-by":"publisher","first-page":"823","DOI":"10.3390\/mi12070823","volume":"12","author":"S Sun","year":"2021","unstructured":"Sun S, Xu M, He M, et al. Folded heterogeneous silicon and lithium niobate Mach-Zehnder modulators with low drive voltage. Micromachines, 2021, 12: 823","journal-title":"Micromachines"},{"key":"3669_CR31","doi-asserted-by":"publisher","first-page":"424","DOI":"10.1109\/LPT.2022.3164794","volume":"34","author":"X Liu","year":"2022","unstructured":"Liu X, Liu H, Xiong B, et al. Broadband meandered thin-film lithium niobate modulator with ultra-low half-wave voltage. IEEE Photon Technol Lett, 2022, 34: 424\u2013427","journal-title":"IEEE Photon Technol Lett"},{"key":"3669_CR32","volume-title":"Analog Optical Links","author":"H C Charles III","year":"2004","unstructured":"Charles H CIII. Analog Optical Links. Cambridge: Cambridge University Press, 2004"},{"key":"3669_CR33","doi-asserted-by":"publisher","first-page":"21615","DOI":"10.1364\/OE.23.021615","volume":"23","author":"J Li","year":"2015","unstructured":"Li J, Xiong B, Sun C, et al. Analysis of frequency response of high power MUTC photodiodes based on photocurrent-dependent equivalent circuit model. Opt Express, 2015, 23: 21615\u201321623","journal-title":"Opt Express"},{"key":"3669_CR34","doi-asserted-by":"publisher","first-page":"8420","DOI":"10.1364\/OE.24.008420","volume":"24","author":"J Li","year":"2016","unstructured":"Li J, Xiong B, Luo Y, et al. Ultrafast dual-drifting layer uni-traveling carrier photodiode with high saturation current. Opt Express, 2016, 24: 8420\u20138428","journal-title":"Opt Express"},{"key":"3669_CR35","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1109\/JSTQE.2021.3115488","volume":"28","author":"E Chao","year":"2022","unstructured":"Chao E, Xiong B, Sun C, et al. D-band MUTC photodiodes with flat frequency response. IEEE J Sel Top Quantum Electron, 2022, 28: 1\u20138","journal-title":"IEEE J Sel Top Quantum Electron"},{"key":"3669_CR36","doi-asserted-by":"publisher","first-page":"939","DOI":"10.1049\/el.2017.1695","volume":"53","author":"H Z Weng","year":"2017","unstructured":"Weng H Z, Wada O, Han J Y, et al. Sub-THz wave generation based on a dual wavelength microsquare laser. Electron lett, 2017, 53: 939\u2013941","journal-title":"Electron lett"},{"key":"3669_CR37","first-page":"56","volume":"24","author":"T Shi","year":"2013","unstructured":"Shi T, Xiong B, Sun C, et al. Applications of high-saturation-current photodiode in the ROF links with low noise figure and high gain (in Chinese). J Optoelectron Laser, 2013, 24: 56\u201362","journal-title":"J Optoelectron Laser"},{"key":"3669_CR38","doi-asserted-by":"publisher","first-page":"97","DOI":"10.1038\/nphoton.2007.3","volume":"1","author":"M Tonouchi","year":"2007","unstructured":"Tonouchi M. Cutting-edge terahertz technology. Nat Photon, 2007, 1: 97\u2013105","journal-title":"Nat Photon"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-022-3669-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-022-3669-5\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-022-3669-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,6,18]],"date-time":"2024-06-18T21:04:08Z","timestamp":1718744648000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-022-3669-5"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,4,17]]},"references-count":38,"journal-issue":{"issue":"5","published-print":{"date-parts":[[2023,5]]}},"alternative-id":["3669"],"URL":"https:\/\/doi.org\/10.1007\/s11432-022-3669-5","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,4,17]]},"assertion":[{"value":"8 October 2022","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"15 November 2022","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"25 December 2022","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"17 April 2023","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"150401"}}