{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,19]],"date-time":"2026-05-19T05:14:41Z","timestamp":1779167681774,"version":"3.51.4"},"reference-count":51,"publisher":"Springer Science and Business Media LLC","issue":"6","license":[{"start":{"date-parts":[[2023,5,10]],"date-time":"2023-05-10T00:00:00Z","timestamp":1683676800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2023,5,10]],"date-time":"2023-05-10T00:00:00Z","timestamp":1683676800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2023,6]]},"DOI":"10.1007\/s11432-022-3695-1","type":"journal-article","created":{"date-parts":[[2023,5,13]],"date-time":"2023-05-13T09:02:38Z","timestamp":1683968558000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":18,"title":["Near-infrared optoelectronic synapses based on a Te\/\u03b1-In2Se3 heterojunction for neuromorphic computing"],"prefix":"10.1007","volume":"66","author":[{"given":"Tao","family":"Yan","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuchen","family":"Cai","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yanrong","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jia","family":"Yang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shuhui","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xueying","family":"Zhan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fengmei","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ruiqing","family":"Cheng","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Feng","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jun","family":"He","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhenxing","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2023,5,10]]},"reference":[{"key":"3695_CR1","doi-asserted-by":"publisher","first-page":"1379","DOI":"10.1109\/JPROC.2015.2444094","volume":"103","author":"G Indiveri","year":"2015","unstructured":"Indiveri G, Liu S C. Memory and information processing in neuromorphic systems. Proc IEEE, 2015, 103: 1379\u20131397","journal-title":"Proc IEEE"},{"key":"3695_CR2","doi-asserted-by":"publisher","first-page":"15199","DOI":"10.1038\/ncomms15199","volume":"8","author":"P Yao","year":"2017","unstructured":"Yao P, Wu H, Gao B. Face classification using electronic synapses. Nat Commun, 2017, 8: 15199","journal-title":"Nat Commun"},{"key":"3695_CR3","doi-asserted-by":"publisher","first-page":"333","DOI":"10.1038\/s41928-018-0092-2","volume":"1","author":"D Ielmini","year":"2018","unstructured":"Ielmini D, Wong H S P. In-memory computing with resistive switching devices. Nat Electron, 2018, 1: 333\u2013343","journal-title":"Nat Electron"},{"key":"3695_CR4","doi-asserted-by":"publisher","first-page":"22","DOI":"10.1038\/s41928-017-0006-8","volume":"1","author":"M A Zidan","year":"2018","unstructured":"Zidan M A, Strachan J P, Lu W D. The future of electronics based on memristive systems. Nat Electron, 2018, 1: 22\u201329","journal-title":"Nat Electron"},{"key":"3695_CR5","doi-asserted-by":"publisher","first-page":"641","DOI":"10.1038\/s41586-020-1942-4","volume":"577","author":"P Yao","year":"2020","unstructured":"Yao P, Wu H, Gao B. Fully hardware-implemented memristor convolutional neural network. Nature, 2020, 577: 641\u2013646","journal-title":"Nature"},{"key":"3695_CR6","doi-asserted-by":"publisher","first-page":"52","DOI":"10.1038\/s41928-017-0002-z","volume":"1","author":"C Li","year":"2017","unstructured":"Li C, Hu M, Li Y. Analogue signal and image processing with large memristor crossbars. Nat Electron, 2017, 1: 52\u201359","journal-title":"Nat Electron"},{"key":"3695_CR7","doi-asserted-by":"publisher","first-page":"309","DOI":"10.1038\/s41563-019-0291-x","volume":"18","author":"Q Xia","year":"2019","unstructured":"Xia Q, Yang J J. Memristive crossbar arrays for brain-inspired computing. Nat Mater, 2019, 18: 309\u2013323","journal-title":"Nat Mater"},{"key":"3695_CR8","doi-asserted-by":"publisher","first-page":"693","DOI":"10.1038\/nnano.2016.70","volume":"11","author":"T Tuma","year":"2016","unstructured":"Tuma T, Pantazi A, Gallo M L. Stochastic phase-change neurons. Nat Nanotech, 2016, 11: 693\u2013699","journal-title":"Nat Nanotech"},{"key":"3695_CR9","doi-asserted-by":"publisher","first-page":"588","DOI":"10.1038\/s41928-020-00492-7","volume":"3","author":"A I Khan","year":"2020","unstructured":"Khan A I, Keshavarzi A, Datta S. The future of ferroelectric field-effect transistor technology. Nat Electron, 2020, 3: 588\u2013597","journal-title":"Nat Electron"},{"key":"3695_CR10","doi-asserted-by":"publisher","first-page":"504","DOI":"10.1038\/s41586-022-04992-8","volume":"608","author":"W Wan","year":"2022","unstructured":"Wan W, Kubendran R, Schaefer C. A compute-in-memory chip based on resistive random-access memory. Nature, 2022, 608: 504\u2013512","journal-title":"Nature"},{"key":"3695_CR11","doi-asserted-by":"publisher","first-page":"2100144","DOI":"10.1002\/admt.202100144","volume":"7","author":"M S Kim","year":"2021","unstructured":"Kim M S, Kim M S, Lee G J. Bio-inspired artificial vision and neuromorphic image processing devices. Adv Mater Technologies, 2021, 7: 2100144","journal-title":"Adv Mater Technologies"},{"key":"3695_CR12","doi-asserted-by":"publisher","first-page":"776","DOI":"10.1038\/s41565-019-0501-3","volume":"14","author":"F Zhou","year":"2019","unstructured":"Zhou F, Zhou Z, Chen J. Optoelectronic resistive random access memory for neuromorphic vision sensors. Nat Nanotechnol, 2019, 14: 776\u2013782","journal-title":"Nat Nanotechnol"},{"key":"3695_CR13","doi-asserted-by":"publisher","first-page":"3372","DOI":"10.1021\/acs.nanolett.2c00599","volume":"22","author":"C Jin","year":"2022","unstructured":"Jin C, Liu W, Xu Y. Artificial vision adaption mimicked by an optoelectrical In2O3 transistor array. Nano Lett, 2022, 22: 3372\u20133379","journal-title":"Nano Lett"},{"key":"3695_CR14","doi-asserted-by":"publisher","first-page":"1497","DOI":"10.1021\/acsnano.0c08921","volume":"15","author":"Y X Hou","year":"2021","unstructured":"Hou Y X, Li Y, Zhang Z C. Large-scale and flexible optical synapses for neuromorphic computing and integrated visible information sensing memory processing. ACS Nano, 2021, 15: 1497\u20131508","journal-title":"ACS Nano"},{"key":"3695_CR15","doi-asserted-by":"publisher","first-page":"28","DOI":"10.1511\/2003.11.28","volume":"91","author":"H Kolb","year":"2003","unstructured":"Kolb H. How the retina works. Am Sci, 2003, 91: 28\u201335","journal-title":"Am Sci"},{"key":"3695_CR16","doi-asserted-by":"publisher","first-page":"138115","DOI":"10.1007\/s11467-018-0785-z","volume":"13","author":"Z Z Yan","year":"2018","unstructured":"Yan Z Z, Jiang Z H, Lu J P. Interfacial charge transfer in WS2 monolayer\/CsPbBr3 microplate heterostructure. Front Phys, 2018, 13: 138115","journal-title":"Front Phys"},{"key":"3695_CR17","doi-asserted-by":"publisher","first-page":"eabq1781","DOI":"10.1126\/sciadv.abq1781","volume":"8","author":"Y Chen","year":"2022","unstructured":"Chen Y, Tan C, Wang Z, et al. Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection. Sci Adv, 2022, 8: eabq1781","journal-title":"Sci Adv"},{"key":"3695_CR18","doi-asserted-by":"publisher","first-page":"1485","DOI":"10.1038\/s41467-022-29171-1","volume":"13","author":"S Lee","year":"2022","unstructured":"Lee S, Peng R, Wu C. Programmable black phosphorus image sensor for broadband optoelectronic edge computing. Nat Commun, 2022, 13: 1485","journal-title":"Nat Commun"},{"key":"3695_CR19","doi-asserted-by":"publisher","first-page":"eabn1811","DOI":"10.1126\/sciadv.abn1811","volume":"8","author":"H Jiao","year":"2022","unstructured":"Jiao H, Wang X, Chen Y, et al. HgCdTe\/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector. Sci Adv, 2022, 8: eabn1811","journal-title":"Sci Adv"},{"key":"3695_CR20","doi-asserted-by":"publisher","first-page":"103501","DOI":"10.1063\/1.5083685","volume":"114","author":"N Li","year":"2019","unstructured":"Li N, Wen Y, Cheng R. Strongly coupled van der Waals heterostructures for high-performance infrared phototransistor. Appl Phys Lett, 2019, 114: 103501","journal-title":"Appl Phys Lett"},{"key":"3695_CR21","doi-asserted-by":"publisher","first-page":"2689","DOI":"10.1007\/s12274-021-3790-4","volume":"15","author":"G Xu","year":"2021","unstructured":"Xu G, Liu D, Li S. Binary-ternary transition metal chalcogenides interlayer coupling in van der Waals type-II heterostructure for visible-infrared photodetector with efficient suppression dark currents. Nano Res, 2021, 15: 2689\u20132696","journal-title":"Nano Res"},{"key":"3695_CR22","doi-asserted-by":"publisher","first-page":"849","DOI":"10.1038\/s41928-022-00877-w","volume":"5","author":"P Luo","year":"2022","unstructured":"Luo P, Liu C, Lin J. Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation. Nat Electron, 2022, 5: 849\u2013858","journal-title":"Nat Electron"},{"key":"3695_CR23","doi-asserted-by":"publisher","first-page":"2308","DOI":"10.1038\/s41467-020-16125-8","volume":"11","author":"L Tong","year":"2020","unstructured":"Tong L, Huang X, Wang P. Stable mid-infrared polarization imaging based on quasi-2D tellurium at room temperature. Nat Commun, 2020, 11: 2308","journal-title":"Nat Commun"},{"key":"3695_CR24","doi-asserted-by":"publisher","first-page":"228","DOI":"10.1038\/s41928-018-0058-4","volume":"1","author":"Y Wang","year":"2018","unstructured":"Wang Y, Qiu G, Wang R. Field-effect transistors made from solution-grown two-dimensional tellurene. Nat Electron, 2018, 1: 228\u2013236","journal-title":"Nat Electron"},{"key":"3695_CR25","doi-asserted-by":"publisher","first-page":"53","DOI":"10.1038\/s41565-019-0585-9","volume":"15","author":"C Zhao","year":"2020","unstructured":"Zhao C, Tan C, Lien D H. Evaporated tellurium thin films for p-type field-effect transistors and circuits. Nat Nanotechnol, 2020, 15: 53\u201358","journal-title":"Nat Nanotechnol"},{"key":"3695_CR26","doi-asserted-by":"publisher","first-page":"206401","DOI":"10.1103\/PhysRevLett.114.206401","volume":"114","author":"M Hirayama","year":"2015","unstructured":"Hirayama M, Okugawa R, Ishibashi S. Weyl node and spin texture in trigonal tellurium and selenium. Phys Rev Lett, 2015, 114: 206401","journal-title":"Phys Rev Lett"},{"key":"3695_CR27","doi-asserted-by":"publisher","first-page":"585","DOI":"10.1038\/s41565-020-0715-4","volume":"15","author":"G Qiu","year":"2020","unstructured":"Qiu G, Niu C, Wang Y. Quantum hall effect of Weyl fermions in n-type semiconducting tellurene. Nat Nanotechnol, 2020, 15: 585\u2013591","journal-title":"Nat Nanotechnol"},{"key":"3695_CR28","doi-asserted-by":"publisher","first-page":"16087","DOI":"10.1038\/natrevmats.2016.87","volume":"2","author":"L W Martin","year":"2016","unstructured":"Martin L W, Rappe A M. Thin-film ferroelectric materials and their applications. Nat Rev Mater, 2016, 2: 16087","journal-title":"Nat Rev Mater"},{"key":"3695_CR29","doi-asserted-by":"crossref","unstructured":"Chen C, Yang M, Liu S, et al. Bio-inspired neurons based on novel leaky-FeFET with ultra-low hardware cost and advanced functionality for all-ferroelectric neural network. In: Proceedings of Symposium on VLSI Technology, 2019","DOI":"10.23919\/VLSIT.2019.8776495"},{"key":"3695_CR30","doi-asserted-by":"publisher","first-page":"227601","DOI":"10.1103\/PhysRevLett.120.227601","volume":"120","author":"J Xiao","year":"2018","unstructured":"Xiao J, Zhu H, Wang Y. Intrinsic two-dimensional ferroelectricity with dipole locking. Phys Rev Lett, 2018, 120: 227601","journal-title":"Phys Rev Lett"},{"key":"3695_CR31","doi-asserted-by":"publisher","first-page":"580","DOI":"10.1038\/s41928-019-0338-7","volume":"2","author":"M Si","year":"2019","unstructured":"Si M, Saha A K, Gao S. A ferroelectric semiconductor field-effect transistor. Nat Electron, 2019, 2: 580\u2013586","journal-title":"Nat Electron"},{"key":"3695_CR32","doi-asserted-by":"publisher","first-page":"2004609","DOI":"10.1002\/adfm.202004609","volume":"30","author":"L Wang","year":"2020","unstructured":"Wang L, Wang X, Zhang Y. Exploring ferroelectric switching in \u03b1-In2Se3 for neuromorphic computing. Adv Funct Mater, 2020, 30: 2004609","journal-title":"Adv Funct Mater"},{"key":"3695_CR33","doi-asserted-by":"publisher","first-page":"1803738","DOI":"10.1002\/adfm.201803738","volume":"28","author":"F Xue","year":"2018","unstructured":"Xue F, Hu W, Lee K C. Room-temperature ferroelectricity in hexagonally layered \u03b1-In2Se3 nanoflakes down to the monolayer limit. Adv Funct Mater, 2018, 28: 1803738","journal-title":"Adv Funct Mater"},{"key":"3695_CR34","doi-asserted-by":"publisher","first-page":"14956","DOI":"10.1038\/ncomms14956","volume":"8","author":"W Ding","year":"2017","unstructured":"Ding W, Zhu J, Wang Z. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials. Nat Commun, 2017, 8: 14956","journal-title":"Nat Commun"},{"key":"3695_CR35","doi-asserted-by":"publisher","first-page":"252903","DOI":"10.1063\/1.5097842","volume":"114","author":"H Hu","year":"2019","unstructured":"Hu H, Sun Y, Chai M. Room-temperature out-of-plane and in-plane ferroelectricity of two-dimensional \u03b2-InSe nanoflakes. Appl Phys Lett, 2019, 114: 252903","journal-title":"Appl Phys Lett"},{"key":"3695_CR36","doi-asserted-by":"publisher","first-page":"274","DOI":"10.1126\/science.aad8609","volume":"353","author":"K Chang","year":"2016","unstructured":"Chang K, Liu J, Lin H. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. Science, 2016, 353: 274\u2013278","journal-title":"Science"},{"key":"3695_CR37","doi-asserted-by":"publisher","first-page":"3344","DOI":"10.1038\/s41467-018-05640-4","volume":"9","author":"T Li","year":"2018","unstructured":"Li T, Lipatov A, Lu H. Optical control of polarization in ferroelectric heterostructures. Nat Commun, 2018, 9: 3344","journal-title":"Nat Commun"},{"key":"3695_CR38","doi-asserted-by":"publisher","first-page":"3198","DOI":"10.1038\/s41467-022-30951-y","volume":"13","author":"S Wu","year":"2022","unstructured":"Wu S, Chen Y, Wang X. Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains. Nat Commun, 2022, 13: 3198","journal-title":"Nat Commun"},{"key":"3695_CR39","doi-asserted-by":"publisher","first-page":"23488","DOI":"10.1039\/D0NR06872A","volume":"12","author":"K Xu","year":"2020","unstructured":"Xu K, Jiang W, Gao X. Optical control of ferroelectric switching and multifunctional devices based on van der Waals ferroelectric semiconductors. Nanoscale, 2020, 12: 23488\u201323496","journal-title":"Nanoscale"},{"key":"3695_CR40","doi-asserted-by":"publisher","first-page":"2004206","DOI":"10.1002\/adfm.202004206","volume":"30","author":"F Xue","year":"2020","unstructured":"Xue F, He X, Liu W. Optoelectronic ferroelectric domain-wall memories made from a single van Der Waals ferroelectric. Adv Funct Mater, 2020, 30: 2004206","journal-title":"Adv Funct Mater"},{"key":"3695_CR41","doi-asserted-by":"publisher","first-page":"10808","DOI":"10.1038\/ncomms10808","volume":"7","author":"W J Hu","year":"2016","unstructured":"Hu W J, Wang Z, Yu W. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions. Nat Commun, 2016, 7: 10808","journal-title":"Nat Commun"},{"key":"3695_CR42","doi-asserted-by":"publisher","first-page":"382","DOI":"10.1038\/s41467-020-20660-9","volume":"12","author":"X Long","year":"2021","unstructured":"Long X, Tan H, S\u00e1nchez F. Non-volatile optical switch of resistance in photoferroelectric tunnel junctions. Nat Commun, 2021, 12: 382","journal-title":"Nat Commun"},{"key":"3695_CR43","doi-asserted-by":"publisher","first-page":"2205468","DOI":"10.1002\/adfm.202205468","volume":"32","author":"J Yang","year":"2022","unstructured":"Yang J, Wang F, Guo J. Ultrasensitive ferroelectric semiconductor phototransistors for photon-level detection. Adv Funct Mater, 2022, 32: 2205468","journal-title":"Adv Funct Mater"},{"key":"3695_CR44","doi-asserted-by":"publisher","first-page":"761","DOI":"10.1038\/s41928-022-00847-2","volume":"5","author":"K Liu","year":"2022","unstructured":"Liu K, Zhang T, Dang B. An optoelectronic synapse based on \u03b1-In2Se3 with controllable temporal dynamics for multimode and multiscale reservoir computing. Nat Electron, 2022, 5: 761\u2013773","journal-title":"Nat Electron"},{"key":"3695_CR45","doi-asserted-by":"publisher","first-page":"6736","DOI":"10.1007\/s12274-022-4330-6","volume":"15","author":"Y Yao","year":"2022","unstructured":"Yao Y, Zhan X, Ding C. One-step method to simultaneously synthesize separable Te and GeTe nanosheets. Nano Res, 2022, 15: 6736\u20136742","journal-title":"Nano Res"},{"key":"3695_CR46","doi-asserted-by":"publisher","first-page":"676","DOI":"10.1038\/nnano.2014.150","volume":"9","author":"C H Lee","year":"2014","unstructured":"Lee C H, Lee G H, van der Zande A M. Atomically thin p-n junctions with van der Waals heterointerfaces. Nat Nanotech, 2014, 9: 676\u2013681","journal-title":"Nat Nanotech"},{"key":"3695_CR47","doi-asserted-by":"publisher","first-page":"7558","DOI":"10.1021\/acs.nanolett.5b03291","volume":"15","author":"F Wang","year":"2015","unstructured":"Wang F, Wang Z, Xu K. Tunable GaTe-MoS2 van der Waals p-n junctions with novel optoelectronic performance. Nano Lett, 2015, 15: 7558\u20137566","journal-title":"Nano Lett"},{"key":"3695_CR48","doi-asserted-by":"publisher","first-page":"260","DOI":"10.1038\/nmat3282","volume":"11","author":"J Kreisel","year":"2012","unstructured":"Kreisel J, Alexe M, Thomas P A. A photoferroelectric material is more than the sum of its parts. Nat Mater, 2012, 11: 260","journal-title":"Nat Mater"},{"key":"3695_CR49","doi-asserted-by":"publisher","first-page":"092902","DOI":"10.1063\/1.4748330","volume":"101","author":"J L Wang","year":"2012","unstructured":"Wang J L, Vilquin B, Barrett N. Screening of ferroelectric domains on BaTiO3 (001) surface by ultraviolet photo-induced charge and dissociative water adsorption. Appl Phys Lett, 2012, 101: 092902","journal-title":"Appl Phys Lett"},{"key":"3695_CR50","doi-asserted-by":"publisher","first-page":"3362","DOI":"10.1063\/1.1621730","volume":"83","author":"I Stolichnov","year":"2003","unstructured":"Stolichnov I, Tagantsev A, Setter N. Crossover between nucleation-controlled kinetics and domain wall motion kinetics of polarization reversal in ferroelectric films. Appl Phys Lett, 2003, 83: 3362\u20133364","journal-title":"Appl Phys Lett"},{"key":"3695_CR51","doi-asserted-by":"publisher","first-page":"459","DOI":"10.3390\/s16040459","volume":"16","author":"I Takai","year":"2016","unstructured":"Takai I, Matsubara H, Soga M. Single-photon avalanche diode with enhanced NIR-sensitivity for automotive LIDAR systems. Sensors, 2016, 16: 459","journal-title":"Sensors"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-022-3695-1.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-022-3695-1\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-022-3695-1.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,7,19]],"date-time":"2024-07-19T23:46:28Z","timestamp":1721432788000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-022-3695-1"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,5,10]]},"references-count":51,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2023,6]]}},"alternative-id":["3695"],"URL":"https:\/\/doi.org\/10.1007\/s11432-022-3695-1","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,5,10]]},"assertion":[{"value":"10 October 2022","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"8 December 2022","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"31 January 2023","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"10 May 2023","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"160404"}}