{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,30]],"date-time":"2026-07-30T21:20:21Z","timestamp":1785446421312,"version":"3.56.0"},"reference-count":60,"publisher":"Springer Science and Business Media LLC","issue":"6","license":[{"start":{"date-parts":[[2023,5,18]],"date-time":"2023-05-18T00:00:00Z","timestamp":1684368000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2023,5,18]],"date-time":"2023-05-18T00:00:00Z","timestamp":1684368000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2023,6]]},"DOI":"10.1007\/s11432-023-3751-y","type":"journal-article","created":{"date-parts":[[2023,5,22]],"date-time":"2023-05-22T16:02:14Z","timestamp":1684771334000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":18,"title":["Recent progress of layered memristors based on two-dimensional MoS2"],"prefix":"10.1007","volume":"66","author":[{"given":"Wei","family":"Tong","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuan","family":"Liu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2023,5,18]]},"reference":[{"key":"3751_CR1","doi-asserted-by":"publisher","first-page":"80","DOI":"10.1038\/nature06932","volume":"453","author":"D B Strukov","year":"2008","unstructured":"Strukov D B, Snider G S, Stewart D R, et al. The missing memristor found. Nature, 2008, 453: 80\u201383","journal-title":"Nature"},{"key":"3751_CR2","doi-asserted-by":"publisher","first-page":"309","DOI":"10.1038\/s41563-019-0291-x","volume":"18","author":"Q Xia","year":"2019","unstructured":"Xia Q, Yang J J. Memristive crossbar arrays for brain-inspired computing. Nat Mater, 2019, 18: 309\u2013323","journal-title":"Nat Mater"},{"key":"3751_CR3","doi-asserted-by":"publisher","first-page":"625","DOI":"10.1038\/nmat3070","volume":"10","author":"M J Lee","year":"2011","unstructured":"Lee M J, Lee C B, Lee D, et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5\u2212x\/Ta2O2\u2212x bilayer structures. Nat Mater, 2011, 10: 625\u2013630","journal-title":"Nat Mater"},{"key":"3751_CR4","doi-asserted-by":"publisher","first-page":"641","DOI":"10.1038\/s41586-020-1942-4","volume":"577","author":"P Yao","year":"2020","unstructured":"Yao P, Wu H, Gao B, et al. Fully hardware-implemented memristor convolutional neural network. Nature, 2020, 577: 641\u2013646","journal-title":"Nature"},{"key":"3751_CR5","doi-asserted-by":"publisher","first-page":"13","DOI":"10.1038\/nnano.2012.240","volume":"8","author":"J J Yang","year":"2013","unstructured":"Yang J J, Strukov D B, Stewart D R. Memristive devices for computing. Nat Nanotech, 2013, 8: 13\u201324","journal-title":"Nat Nanotech"},{"key":"3751_CR6","doi-asserted-by":"publisher","first-page":"61","DOI":"10.1038\/nature14441","volume":"521","author":"M Prezioso","year":"2015","unstructured":"Prezioso M, Merrikh-Bayat F, Hoskins B D, et al. Training and operation of an integrated neuromorphic network based on metal-oxide memristors. Nature, 2015, 521: 61\u201364","journal-title":"Nature"},{"key":"3751_CR7","doi-asserted-by":"publisher","first-page":"22","DOI":"10.1038\/s41928-017-0006-8","volume":"1","author":"M A Zidan","year":"2018","unstructured":"Zidan M A, Strachan J P, Lu W D. The future of electronics based on memristive systems. Nat Electron, 2018, 1: 22\u201329","journal-title":"Nat Electron"},{"key":"3751_CR8","doi-asserted-by":"publisher","first-page":"333","DOI":"10.1038\/s41928-018-0092-2","volume":"1","author":"D Ielmini","year":"2018","unstructured":"Ielmini D, Wong H S P. In-memory computing with resistive switching devices. Nat Electron, 2018, 1: 333\u2013343","journal-title":"Nat Electron"},{"key":"3751_CR9","doi-asserted-by":"publisher","first-page":"466","DOI":"10.1038\/s41928-018-0115-z","volume":"1","author":"M A Lastras-Monta\u00f1o","year":"2018","unstructured":"Lastras-Monta\u00f1o M A, Cheng K T. Resistive random-access memory based on ratioed memristors. Nat Electron, 2018, 1: 466\u2013472","journal-title":"Nat Electron"},{"key":"3751_CR10","doi-asserted-by":"publisher","first-page":"318","DOI":"10.1038\/nature23307","volume":"548","author":"S Kumar","year":"2017","unstructured":"Kumar S, Strachan J P, Williams R S. Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing. Nature, 2017, 548: 318\u2013321","journal-title":"Nature"},{"key":"3751_CR11","doi-asserted-by":"publisher","first-page":"8","DOI":"10.1038\/s41563-018-0257-4","volume":"18","author":"D A Rehn","year":"2019","unstructured":"Rehn D A, Reed E J. Memristors with distorted structures. Nat Mater, 2019, 18: 8\u20139","journal-title":"Nat Mater"},{"key":"3751_CR12","doi-asserted-by":"publisher","first-page":"101","DOI":"10.1038\/nmat4756","volume":"16","author":"Z Wang","year":"2017","unstructured":"Wang Z, Joshi S, Savel\u2019ev S E, et al. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing. Nat Mater, 2017, 16: 101\u2013108","journal-title":"Nat Mater"},{"key":"3751_CR13","doi-asserted-by":"publisher","first-page":"2006773","DOI":"10.1002\/adfm.202006773","volume":"31","author":"K Sun","year":"2017","unstructured":"Sun K, Chen J, Yan X. The future of memristors: materials engineering and neural networks. Adv Funct Mater, 2017, 31: 2006773","journal-title":"Adv Funct Mater"},{"key":"3751_CR14","doi-asserted-by":"publisher","first-page":"2002092","DOI":"10.1002\/adma.202002092","volume":"32","author":"W Huh","year":"2020","unstructured":"Huh W, Lee D, Lee C H. Memristors based on 2D materials as an artificial synapse for neuromorphic electronics. Adv Mater, 2020, 32: 2002092","journal-title":"Adv Mater"},{"key":"3751_CR15","doi-asserted-by":"publisher","first-page":"2000109","DOI":"10.1002\/sstr.202000109","volume":"2","author":"T Shi","year":"2021","unstructured":"Shi T, Wang R, Wu Z, et al. A review of resistive switching devices: performance improvement, characterization, and applications. Small Struct, 2021, 2: 2000109","journal-title":"Small Struct"},{"key":"3751_CR16","doi-asserted-by":"publisher","first-page":"434","DOI":"10.1021\/acs.nanolett.7b04342","volume":"18","author":"R Ge","year":"2018","unstructured":"Ge R, Wu X, Kim M, et al. Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides. Nano Lett, 2018, 18: 434\u2013441","journal-title":"Nano Lett"},{"key":"3751_CR17","doi-asserted-by":"publisher","first-page":"2524","DOI":"10.1038\/s41467-018-04934-x","volume":"9","author":"M Kim","year":"2018","unstructured":"Kim M, Ge R, Wu X, et al. Zero-static power radio-frequency switches based on MoS2 atomristors. Nat Commun, 2018, 9: 2524","journal-title":"Nat Commun"},{"key":"3751_CR18","doi-asserted-by":"publisher","first-page":"8800","DOI":"10.1021\/acs.nanolett.1c03169","volume":"21","author":"X F Lu","year":"2021","unstructured":"Lu X F, Zhang Y, Wang N, et al. Exploring low power and ultrafast memristor on p-type van der Waals SnS. Nano Lett, 2021, 21: 8800\u20138807","journal-title":"Nano Lett"},{"key":"3751_CR19","doi-asserted-by":"publisher","first-page":"2103376","DOI":"10.1002\/adma.202103376","volume":"34","author":"S Li","year":"2022","unstructured":"Li S, Pam M E, Li Y, et al. Wafer-scale 2D hafnium diselenide based memristor crossbar array for energy-efficient neural network hardware. Adv Mater, 2022, 34: 2103376","journal-title":"Adv Mater"},{"key":"3751_CR20","doi-asserted-by":"publisher","first-page":"2005718","DOI":"10.1002\/adfm.202005718","volume":"30","author":"K Ranganathan","year":"2020","unstructured":"Ranganathan K, Fiegenbaum-Raz M, Ismach A. Large-scale and robust multifunctional vertically aligned MoS2 photo-memristors. Adv Funct Mater, 2020, 30: 2005718","journal-title":"Adv Funct Mater"},{"key":"3751_CR21","doi-asserted-by":"publisher","first-page":"1900740","DOI":"10.1002\/aelm.201900740","volume":"5","author":"X Feng","year":"2019","unstructured":"Feng X, Li Y, Wang L, et al. A fully printed flexible MoS2 memristive artificial synapse with femtojoule switching energy. Adv Electron Mater, 2019, 5: 1900740","journal-title":"Adv Electron Mater"},{"key":"3751_CR22","doi-asserted-by":"publisher","first-page":"1901423","DOI":"10.1002\/smll.201901423","volume":"15","author":"X Yan","year":"2019","unstructured":"Yan X, Zhao Q, Chen A P, et al. Vacancy-induced synaptic behavior in 2D WS2 nanosheet-based memristor for low-power neuromorphic computing. Small, 2019, 15: 1901423","journal-title":"Small"},{"key":"3751_CR23","doi-asserted-by":"publisher","first-page":"403","DOI":"10.1038\/nnano.2015.56","volume":"10","author":"V K Sangwan","year":"2015","unstructured":"Sangwan V K, Jariwala D, Kim I S, et al. Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2. Nat Nanotech, 2015, 10: 403\u2013406","journal-title":"Nat Nanotech"},{"key":"3751_CR24","doi-asserted-by":"publisher","first-page":"458","DOI":"10.1038\/s41928-018-0118-9","volume":"1","author":"Y Shi","year":"2018","unstructured":"Shi Y, Liang X, Yuan B, et al. Electronic synapses made of layered two-dimensional materials. Nat Electron, 2018, 1: 458\u2013465","journal-title":"Nat Electron"},{"key":"3751_CR25","doi-asserted-by":"publisher","first-page":"2201276","DOI":"10.1002\/adfm.202201276","volume":"32","author":"P Lei","year":"2022","unstructured":"Lei P, Duan H, Qin L, et al. High-performance memristor based on 2D layered BiOI nanosheet for low-power artificial optoelectronic synapses. Adv Funct Mater, 2022, 32: 2201276","journal-title":"Adv Funct Mater"},{"key":"3751_CR26","doi-asserted-by":"publisher","first-page":"1271","DOI":"10.1021\/nl903868w","volume":"10","author":"A Splendiani","year":"2010","unstructured":"Splendiani A, Sun L, Zhang Y, et al. Emerging photoluminescence in monolayer MoS2. Nano Lett, 2010, 10: 1271\u20131275","journal-title":"Nano Lett"},{"key":"3751_CR27","doi-asserted-by":"publisher","first-page":"2411","DOI":"10.1021\/acs.nanolett.8b05140","volume":"19","author":"R Xu","year":"2019","unstructured":"Xu R, Jang H, Lee M H, et al. Vertical MoS2 double-layer memristor with electrochemical metallization as an atomic-scale synapse with switching thresholds approaching 100 mV. Nano Lett, 2019, 19: 2411\u20132417","journal-title":"Nano Lett"},{"key":"3751_CR28","doi-asserted-by":"publisher","first-page":"45843","DOI":"10.1021\/acsami.1c11359","volume":"13","author":"A Abnavi","year":"2021","unstructured":"Abnavi A, Ahmadi R, Hasani A, et al. Free-standing multilayer molybdenum disulfide memristor for brain-inspired neuro-morphic applications. ACS Appl Mater Interfaces, 2021, 13: 45843\u201345853","journal-title":"ACS Appl Mater Interfaces"},{"key":"3751_CR29","doi-asserted-by":"publisher","first-page":"130","DOI":"10.1038\/s41928-018-0021-4","volume":"1","author":"M Wang","year":"2018","unstructured":"Wang M, Cai S, Pan C, et al. Robust memristors based on layered two-dimensional materials. Nat Electron, 2018, 1: 130\u2013136","journal-title":"Nat Electron"},{"key":"3751_CR30","doi-asserted-by":"publisher","first-page":"141","DOI":"10.1038\/s41563-018-0248-5","volume":"18","author":"X Zhu","year":"2019","unstructured":"Zhu X, Li D, Liang X, et al. Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing. Nat Mater, 2019, 18: 141\u2013148","journal-title":"Nat Mater"},{"key":"3751_CR31","doi-asserted-by":"publisher","first-page":"572","DOI":"10.1021\/acs.nanolett.5b04260","volume":"16","author":"P Cheng","year":"2016","unstructured":"Cheng P, Sun K, Hu Y H. Memristive behavior and ideal memristor of 1T Phase MoS2 nanosheets. Nano Lett, 2016, 16: 572\u2013576","journal-title":"Nano Lett"},{"key":"3751_CR32","doi-asserted-by":"publisher","first-page":"3037","DOI":"10.1038\/s41467-022-30519-w","volume":"13","author":"B Tang","year":"2022","unstructured":"Tang B, Veluri H, Li Y, et al. Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing. Nat Commun, 2022, 13: 3037","journal-title":"Nat Commun"},{"key":"3751_CR33","doi-asserted-by":"publisher","first-page":"99","DOI":"10.1126\/science.aah4698","volume":"354","author":"S B Desai","year":"2016","unstructured":"Desai S B, Madhvapathy S R, Sachid A B, et al. MoS2 transistors with 1-nanometer gate lengths. Science, 2016, 354: 99\u2013102","journal-title":"Science"},{"key":"3751_CR34","doi-asserted-by":"publisher","first-page":"4232","DOI":"10.1038\/ncomms5232","volume":"5","author":"Y Yang","year":"2014","unstructured":"Yang Y, Gao P, Li L, et al. Electrochemical dynamics of nanoscale metallic inclusions in dielectrics. Nat Commun, 2014, 5: 4232","journal-title":"Nat Commun"},{"key":"3751_CR35","doi-asserted-by":"publisher","first-page":"53","DOI":"10.1038\/s41699-022-00325-5","volume":"6","author":"M Naqi","year":"2022","unstructured":"Naqi M, Kang M S, Liu N, et al. Multilevel artificial electronic synaptic device of direct grown robust MoS2 based memristor array for in-memory deep neural network. npj 2D Mater Appl, 2022, 6: 53","journal-title":"npj 2D Mater Appl"},{"key":"3751_CR36","doi-asserted-by":"publisher","first-page":"7195","DOI":"10.1039\/C8TC01844H","volume":"6","author":"X Zhao","year":"2018","unstructured":"Zhao X, Fan Z, Xu H, et al. Reversible alternation between bipolar and unipolar resistive switching in Ag\/MoS2\/Au structure for multilevel flexible memory. J Mater Chem C, 2018, 6: 7195\u20137200","journal-title":"J Mater Chem C"},{"key":"3751_CR37","doi-asserted-by":"publisher","first-page":"1530","DOI":"10.1126\/science.1158877","volume":"324","author":"A K Geim","year":"2009","unstructured":"Geim A K. Graphene: status and prospects. Science, 2009, 324: 1530\u20131534","journal-title":"Science"},{"key":"3751_CR38","doi-asserted-by":"publisher","first-page":"10623","DOI":"10.1002\/adma.201603293","volume":"28","author":"S Liu","year":"2016","unstructured":"Liu S, Lu N, Zhao X, et al. Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory. Adv Mater, 2016, 28: 10623\u201310629","journal-title":"Adv Mater"},{"key":"3751_CR39","doi-asserted-by":"publisher","first-page":"342","DOI":"10.1038\/s41928-021-00566-0","volume":"4","author":"L Liu","year":"2021","unstructured":"Liu L, Kong L, Li Q, et al. Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors. Nat Electron, 2021, 4: 342\u2013347","journal-title":"Nat Electron"},{"key":"3751_CR40","doi-asserted-by":"publisher","first-page":"696","DOI":"10.1038\/s41586-018-0129-8","volume":"557","author":"Y Liu","year":"2018","unstructured":"Liu Y, Guo J, Zhu E, et al. Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions. Nature, 2018, 557: 696\u2013700","journal-title":"Nature"},{"key":"3751_CR41","doi-asserted-by":"publisher","first-page":"045103","DOI":"10.1088\/2631-7990\/ac2296","volume":"3","author":"Q Li","year":"2021","unstructured":"Li Q, Tao Q, Chen Y, et al. Low voltage and robust InSe memristor using van der Waals electrodes integration. Int J Extrem Manuf, 2021, 3: 045103","journal-title":"Int J Extrem Manuf"},{"key":"3751_CR42","doi-asserted-by":"publisher","first-page":"2106253","DOI":"10.1002\/smll.202106253","volume":"18","author":"J Mao","year":"2022","unstructured":"Mao J, Wu S, Ding G, et al. A van der Waals integrated damage-free memristor based on layered 2D hexagonal boron nitride. Small, 2022, 18: 2106253","journal-title":"Small"},{"key":"3751_CR43","doi-asserted-by":"publisher","first-page":"965","DOI":"10.1016\/j.matt.2020.01.011","volume":"2","author":"J Guo","year":"2020","unstructured":"Guo J, Wang L, Liu Y, et al. Highly reliable low-voltage memristive switching and artificial synapse enabled by van der Waals integration. Matter, 2020, 2: 965\u2013976","journal-title":"Matter"},{"key":"3751_CR44","first-page":"1","volume":"2014","author":"F C Chiu","year":"2014","unstructured":"Chiu F C. A review on conduction mechanisms in dielectric films. Adv Mater Sci Eng, 2014, 2014: 1\u201318","journal-title":"Adv Mater Sci Eng"},{"key":"3751_CR45","doi-asserted-by":"publisher","first-page":"6373","DOI":"10.1063\/1.348839","volume":"69","author":"B K Miremadi","year":"1991","unstructured":"Miremadi B K, Cowan T, Morrison S R. New structures from exfoliated MoS2. J Appl Phys, 1991, 69: 6373\u20136379","journal-title":"J Appl Phys"},{"key":"3751_CR46","doi-asserted-by":"publisher","first-page":"313","DOI":"10.1038\/nnano.2015.40","volume":"10","author":"M Acerce","year":"2015","unstructured":"Acerce M, Voiry D, Chhowalla M. Metallic 1T phase MoS2 nanosheets as supercapacitor electrode materials. Nat Nanotech, 2015, 10: 313\u2013318","journal-title":"Nat Nanotech"},{"key":"3751_CR47","doi-asserted-by":"publisher","first-page":"2077","DOI":"10.1002\/smll.201503827","volume":"12","author":"P Zhang","year":"2016","unstructured":"Zhang P, Gao C, Xu B, et al. Structural phase transition effect on resistive switching behavior of MoS2-polyvinylpyrrolidone nanocomposites films for flexible memory devices. Small, 2016, 12: 2077\u20132084","journal-title":"Small"},{"key":"3751_CR48","doi-asserted-by":"publisher","first-page":"6693","DOI":"10.1021\/ja501686w","volume":"136","author":"L Wang","year":"2014","unstructured":"Wang L, Xu Z, Wang W, et al. Atomic mechanism of dynamic electrochemical lithiation processes of MoS2 nanosheets. J Am Chem Soc, 2014, 136: 6693\u20136697","journal-title":"J Am Chem Soc"},{"key":"3751_CR49","doi-asserted-by":"publisher","first-page":"500","DOI":"10.1038\/nature25747","volume":"554","author":"V K Sangwan","year":"2018","unstructured":"Sangwan V K, Lee H S, Bergeron H, et al. Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide. Nature, 2018, 554: 500\u2013504","journal-title":"Nature"},{"key":"3751_CR50","doi-asserted-by":"publisher","first-page":"1703363","DOI":"10.1002\/adma.201703363","volume":"29","author":"Q A Vu","year":"2017","unstructured":"Vu Q A, Kim H, Nguyen V L, et al. A high-on\/off-ratio floating-gate memristor array on a flexible substrate via CVD-grown large-area 2D layer stacking. Adv Mater, 2017, 29: 1703363","journal-title":"Adv Mater"},{"key":"3751_CR51","doi-asserted-by":"publisher","first-page":"1803563","DOI":"10.1002\/adma.201803563","volume":"30","author":"Y Zhai","year":"2018","unstructured":"Zhai Y, Yang X, Wang F, et al. Infrared-sensitive memory based on direct-grown MoS2-upconversion-nanoparticle heterostructure. Adv Mater, 2018, 30: 1803563","journal-title":"Adv Mater"},{"key":"3751_CR52","doi-asserted-by":"publisher","first-page":"14734","DOI":"10.1038\/ncomms14734","volume":"8","author":"J Lee","year":"2017","unstructured":"Lee J, Pak S, Lee Y W, et al. Monolayer optical memory cells based on artificial trap-mediated charge storage and release. Nat Commun, 2017, 8: 14734","journal-title":"Nat Commun"},{"key":"3751_CR53","doi-asserted-by":"publisher","first-page":"1702525","DOI":"10.1002\/smll.201702525","volume":"14","author":"X F Wang","year":"2018","unstructured":"Wang X F, Tian H, Zhao H M, et al. Interface engineering with MoS2-Pd nanoparticles hybrid structure for a low voltage resistive switching memory. Small, 2018, 14: 1702525","journal-title":"Small"},{"key":"3751_CR54","doi-asserted-by":"publisher","first-page":"2866","DOI":"10.1021\/acsnano.1c09904","volume":"16","author":"A Krishnaprasad","year":"2022","unstructured":"Krishnaprasad A, Dev D, Han S S, et al. MoS2 synapses with ultra-low variability and their implementation in Boolean logic. ACS Nano, 2022, 16: 2866\u20132876","journal-title":"ACS Nano"},{"key":"3751_CR55","doi-asserted-by":"publisher","first-page":"3453","DOI":"10.1038\/s41467-019-11411-6","volume":"10","author":"W Sun","year":"2019","unstructured":"Sun W, Gao B, Chi M, et al. Understanding memristive switching via in situ characterization and device modeling. Nat Commun, 2019, 10: 3453","journal-title":"Nat Commun"},{"key":"3751_CR56","doi-asserted-by":"publisher","first-page":"335","DOI":"10.1038\/s41563-017-0001-5","volume":"17","author":"S Choi","year":"2018","unstructured":"Choi S, Tan S H, Li Z, et al. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations. Nat Mater, 2018, 17: 335\u2013340","journal-title":"Nat Mater"},{"key":"3751_CR57","doi-asserted-by":"publisher","first-page":"1603948","DOI":"10.1002\/smll.201603948","volume":"13","author":"X Zhao","year":"2017","unstructured":"Zhao X, Liu S, Niu J, et al. Confining cation injection to enhance CBRAM performance by nanopore graphene layer. Small, 2017, 13: 1603948","journal-title":"Small"},{"key":"3751_CR58","doi-asserted-by":"publisher","first-page":"400","DOI":"10.1557\/mrs2007.63","volume":"32","author":"J Mayer","year":"2007","unstructured":"Mayer J, Giannuzzi L A, Kamino T, et al. TEM sample preparation and FIB-induced damage. MRS Bull, 2007, 32: 400\u2013407","journal-title":"MRS Bull"},{"key":"3751_CR59","doi-asserted-by":"publisher","first-page":"58","DOI":"10.1038\/s41565-020-00789-w","volume":"16","author":"S M Hus","year":"2021","unstructured":"Hus S M, Ge R, Chen P A, et al. Observation of single-defect memristor in an MoS2 atomic sheet. Nat Nanotechnol, 2021, 16: 58\u201362","journal-title":"Nat Nanotechnol"},{"key":"3751_CR60","doi-asserted-by":"publisher","first-page":"199","DOI":"10.1038\/nmat4135","volume":"14","author":"A A Bessonov","year":"2015","unstructured":"Bessonov A A, Kirikova M N, Petukhov D I, et al. Layered memristive and memcapacitive switches for printable electronics. Nat Mater, 2015, 14: 199\u2013204","journal-title":"Nat Mater"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-023-3751-y.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-023-3751-y\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-023-3751-y.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,7,19]],"date-time":"2024-07-19T23:46:40Z","timestamp":1721432800000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-023-3751-y"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,5,18]]},"references-count":60,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2023,6]]}},"alternative-id":["3751"],"URL":"https:\/\/doi.org\/10.1007\/s11432-023-3751-y","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,5,18]]},"assertion":[{"value":"15 February 2023","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"25 March 2023","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"24 April 2023","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"18 May 2023","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"160402"}}