{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T07:39:02Z","timestamp":1775461142234,"version":"3.50.1"},"reference-count":27,"publisher":"Springer Science and Business Media LLC","issue":"6","license":[{"start":{"date-parts":[[2023,5,18]],"date-time":"2023-05-18T00:00:00Z","timestamp":1684368000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2023,5,18]],"date-time":"2023-05-18T00:00:00Z","timestamp":1684368000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2023,6]]},"DOI":"10.1007\/s11432-023-3763-3","type":"journal-article","created":{"date-parts":[[2023,5,22]],"date-time":"2023-05-22T16:02:14Z","timestamp":1684771334000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":10,"title":["A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications"],"prefix":"10.1007","volume":"66","author":[{"given":"Liang","family":"Chen","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Huimin","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qianqian","family":"Huang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ru","family":"Huang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2023,5,18]]},"reference":[{"key":"3763_CR1","doi-asserted-by":"publisher","first-page":"9608","DOI":"10.1021\/acsnano.8b05604","volume":"12","author":"Q Xu","year":"2018","unstructured":"Xu Q, Liu X, Wan B. In2O3 nanowire field-effect transistors with sub-60 mV\/dec subthreshold swing stemming from negative capacitance and their logic applications. ACS Nano, 2018, 12: 9608\u20139616","journal-title":"ACS Nano"},{"key":"3763_CR2","doi-asserted-by":"publisher","first-page":"044012","DOI":"10.1103\/PhysRevApplied.18.044012","volume":"18","author":"X Li","year":"2022","unstructured":"Li X, Yuan P, Li L. Sub-5-nm monolayer GaSe MOSFET with ultralow subthreshold swing and high on-state current: dielectric layer effects. Phys Rev Appl, 2022, 18: 044012","journal-title":"Phys Rev Appl"},{"key":"3763_CR3","doi-asserted-by":"publisher","first-page":"2005353","DOI":"10.1002\/adma.202005353","volume":"32","author":"Y Wang","year":"2020","unstructured":"Wang Y, Bai X, Chu J. Record-low subthreshold-swing negative-capacitance 2D field-effect transistors. Adv Mater, 2020, 32: 2005353","journal-title":"Adv Mater"},{"key":"3763_CR4","doi-asserted-by":"publisher","first-page":"329","DOI":"10.1038\/nature10679","volume":"479","author":"A M Ionescu","year":"2011","unstructured":"Ionescu A M, Riel H. Tunnel field-effect transistors as energy-efficient electronic switches. Nature, 2011, 479: 329\u2013337","journal-title":"Nature"},{"key":"3763_CR5","doi-asserted-by":"publisher","first-page":"91","DOI":"10.1038\/nature15387","volume":"526","author":"D Sarkar","year":"2015","unstructured":"Sarkar D, Xie X, Liu W. A subthermionic tunnel field-effect transistor with an atomically thin channel. Nature, 2015, 526: 91\u201395","journal-title":"Nature"},{"key":"3763_CR6","doi-asserted-by":"publisher","first-page":"169406","DOI":"10.1007\/s11432-022-3500-6","volume":"66","author":"Z X Liang","year":"2023","unstructured":"Liang Z X, Zhao Y, Wang K F. Experimental investigation of a novel junction-modulated hetero-layer tunnel FET with the striped gate for low power applications. Sci China Inf Sci, 2023, 66: 169406","journal-title":"Sci China Inf Sci"},{"key":"3763_CR7","doi-asserted-by":"publisher","first-page":"405","DOI":"10.1021\/nl071804g","volume":"8","author":"S Salahuddin","year":"2008","unstructured":"Salahuddin S, Datta S. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Nano Lett, 2008, 8: 405\u2013410","journal-title":"Nano Lett"},{"key":"3763_CR8","doi-asserted-by":"publisher","first-page":"182","DOI":"10.1038\/nmat4148","volume":"14","author":"A I Khan","year":"2015","unstructured":"Khan A I, Chatterjee K, Wang B. Negative capacitance in a ferroelectric capacitor. Nat Mater, 2015, 14: 182\u2013186","journal-title":"Nat Mater"},{"key":"3763_CR9","doi-asserted-by":"publisher","first-page":"162404","DOI":"10.1007\/s11432-021-3283-5","volume":"65","author":"M X Yang","year":"2022","unstructured":"Yang M X, Huang Q Q, Wang K F. Physical investigation of subthreshold swing degradation behavior in negative capacitance FET. Sci China Inf Sci, 2022, 65: 162404","journal-title":"Sci China Inf Sci"},{"key":"3763_CR10","doi-asserted-by":"publisher","first-page":"1480","DOI":"10.1109\/LED.2011.2163696","volume":"32","author":"Q T Zhao","year":"2011","unstructured":"Zhao Q T, Hartmann J M, Mantl S. An improved Si tunnel field effect transistor with a buried strained Si1\u2212xGex Source. IEEE Electron Device Lett, 2011, 32: 1480\u20131482","journal-title":"IEEE Electron Device Lett"},{"key":"3763_CR11","doi-asserted-by":"publisher","first-page":"67","DOI":"10.1016\/j.sse.2011.11.009","volume":"70","author":"S Hraziia","year":"2012","unstructured":"Hraziia S, Vladimirescu A, Amara A. An analysis on the ambipolar current in Si double-gate tunnel FETs. Solid-State Electron, 2012, 70: 67\u201372","journal-title":"Solid-State Electron"},{"key":"3763_CR12","doi-asserted-by":"publisher","first-page":"184101","DOI":"10.1063\/1.5030072","volume":"123","author":"M Hoffmann","year":"2018","unstructured":"Hoffmann M, Khan A I, Serrao C. Ferroelectric negative capacitance domain dynamics. J Appl Phys, 2018, 123: 184101","journal-title":"J Appl Phys"},{"key":"3763_CR13","doi-asserted-by":"crossref","unstructured":"Obradovic B, Rakshit T, Hatcher R, et al. Ferroelectric switching delay as cause of negative capacitance and the implications to NCFETs. In: Proceedings of IEEE Symposium on VLSI Technology, Honolulu, 2018. 51\u201352","DOI":"10.1109\/VLSIT.2018.8510628"},{"key":"3763_CR14","doi-asserted-by":"publisher","first-page":"826","DOI":"10.1109\/LED.2019.2907988","volume":"40","author":"Y Li","year":"2019","unstructured":"Li Y, Liang R, Wang J, et al. Negative capacitance oxide thin-film transistor with sub-60 mV\/decade subthreshold swing. IEEE Electron Device Lett, 2019, 40: 826\u2013829","journal-title":"IEEE Electron Device Lett"},{"key":"3763_CR15","doi-asserted-by":"crossref","unstructured":"Migita S, Ota H, Toriumi A, et al. Assessment of steep-subthreshold swing behaviors in ferroelectric-gate field-effect transistors caused by positive feedback of polarization reversal. In: Proceedings of IEEE International Electron Devices Meeting, San Francisco, 2018","DOI":"10.1109\/IEDM.2018.8614485"},{"key":"3763_CR16","doi-asserted-by":"crossref","unstructured":"Zhou J, Han G, Li Q, et al. Ferroelectric HfZrOx Ge and GeSn PMOSFETs with sub-60 mV\/decade subthreshold swing, negligible hysteresis, and improved IDS. In: Proceedings of IEEE International Electron Devices Meeting, San Francisco, 2016. 310\u2013313","DOI":"10.1109\/IEDM.2016.7838401"},{"key":"3763_CR17","doi-asserted-by":"publisher","first-page":"41","DOI":"10.1109\/JEDS.2017.2764678","volume":"6","author":"J Zhou","year":"2018","unstructured":"Zhou J, Peng Y, Han G, et al. Hysteresis reduction in negative capacitance Ge PFETs enabled by modulating ferroelectric properties in HfZrOx. IEEE J Electron Devices Soc, 2018, 6: 41\u201348","journal-title":"IEEE J Electron Devices Soc"},{"key":"3763_CR18","doi-asserted-by":"publisher","first-page":"110101","DOI":"10.7567\/APEX.11.110101","volume":"11","author":"M Kobayashi","year":"2018","unstructured":"Kobayashi M. A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor. Appl Phys Express, 2018, 11: 110101","journal-title":"Appl Phys Express"},{"key":"3763_CR19","doi-asserted-by":"crossref","unstructured":"Wang H, Yang M, Huang Q, et al. New insights into the physical origin of negative capacitance and hysteresis in NCFETs. In: Proceedings of IEEE International Electron Devices Meeting, San Francisco, 2018","DOI":"10.1109\/IEDM.2018.8614504"},{"key":"3763_CR20","doi-asserted-by":"publisher","first-page":"064504","DOI":"10.1063\/1.3197246","volume":"106","author":"T Kopp","year":"2009","unstructured":"Kopp T, Mannhart J. Calculation of the capacitances of conductors: Perspectives for the optimization of electronic devices. J Appl Phys, 2009, 106: 064504","journal-title":"J Appl Phys"},{"key":"3763_CR21","doi-asserted-by":"publisher","first-page":"577","DOI":"10.1038\/nmat4273","volume":"14","author":"J He","year":"2015","unstructured":"He J, Hogan T, Mion T R. Spectroscopic evidence for negative electronic compressibility in a quasi-three-dimensional spin-orbit correlated metal. Nat Mater, 2015, 14: 577\u2013582","journal-title":"Nat Mater"},{"key":"3763_CR22","doi-asserted-by":"crossref","unstructured":"Yang Y, Zhang K, Gu Y, et al. Steep-slope negative quantum capacitance field-effect transistor. In: Proceedings of IEEE International Electron Devices Meeting, San Francisco, 2022","DOI":"10.1109\/IEDM45625.2022.10019359"},{"key":"3763_CR23","doi-asserted-by":"publisher","first-page":"033012","DOI":"10.1149\/2162-8777\/ac5a6f","volume":"11","author":"V P Kumar","year":"2022","unstructured":"Kumar V P, Panda D K. Review\u2014next generation 2D material molybdenum disulfide (MoS2): properties, applications and challenges. ECS J Solid State Sci Technol, 2022, 11: 033012","journal-title":"ECS J Solid State Sci Technol"},{"key":"3763_CR24","doi-asserted-by":"publisher","first-page":"6275","DOI":"10.1021\/nl502603d","volume":"14","author":"L Yang","year":"2014","unstructured":"Yang L, Majumdar K, Liu H. Chloride molecular doping technique on 2D materials: WS2 and MoS2. Nano Lett, 2014, 14: 6275\u20136280","journal-title":"Nano Lett"},{"key":"3763_CR25","doi-asserted-by":"publisher","first-page":"1292","DOI":"10.1109\/T-ED.1979.19595","volume":"26","author":"S T Wang","year":"1979","unstructured":"Wang S T. On the I\u2013V characteristics of floating-gate MOS transistors. IEEE Trans Electron Devices, 1979, 26: 1292\u20131294","journal-title":"IEEE Trans Electron Devices"},{"key":"3763_CR26","doi-asserted-by":"publisher","first-page":"951","DOI":"10.1109\/TCSI.2007.895521","volume":"54","author":"D W Graham","year":"2007","unstructured":"Graham D W, Farquhar E, Degnan B, et al. Indirect programming of floating-gate transistors. IEEE Trans Circuits Syst I, 2007, 54: 951\u2013963","journal-title":"IEEE Trans Circuits Syst I"},{"key":"3763_CR27","doi-asserted-by":"publisher","first-page":"674","DOI":"10.1103\/PhysRevLett.68.674","volume":"68","author":"J P Eisenstein","year":"1992","unstructured":"Eisenstein J P, Pfeiffer L N, West K W. Negative compressibility of interacting two-dimensional electron and quasiparticle gases. Phys Rev Lett, 1992, 68: 674\u2013677","journal-title":"Phys Rev Lett"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-023-3763-3.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-023-3763-3\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-023-3763-3.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,7,19]],"date-time":"2024-07-19T20:25:15Z","timestamp":1721420715000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-023-3763-3"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,5,18]]},"references-count":27,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2023,6]]}},"alternative-id":["3763"],"URL":"https:\/\/doi.org\/10.1007\/s11432-023-3763-3","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,5,18]]},"assertion":[{"value":"13 March 2023","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"17 April 2023","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"19 April 2023","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"18 May 2023","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"160406"}}