{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,12]],"date-time":"2026-03-12T12:27:47Z","timestamp":1773318467919,"version":"3.50.1"},"reference-count":46,"publisher":"Springer Science and Business Media LLC","issue":"12","license":[{"start":{"date-parts":[[2023,11,8]],"date-time":"2023-11-08T00:00:00Z","timestamp":1699401600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2023,11,8]],"date-time":"2023-11-08T00:00:00Z","timestamp":1699401600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2023,12]]},"DOI":"10.1007\/s11432-023-3841-9","type":"journal-article","created":{"date-parts":[[2023,11,10]],"date-time":"2023-11-10T12:01:44Z","timestamp":1699617704000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Proximity-induced magnetic order in topological insulator on ferromagnetic semiconductor"],"prefix":"10.1007","volume":"66","author":[{"given":"Hangtian","family":"Wang","sequence":"first","affiliation":[]},{"given":"Koichi","family":"Murata","sequence":"additional","affiliation":[]},{"given":"Weiran","family":"Xie","sequence":"additional","affiliation":[]},{"given":"Jing","family":"Li","sequence":"additional","affiliation":[]},{"given":"Jie","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Kang L.","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Weisheng","family":"Zhao","sequence":"additional","affiliation":[]},{"given":"Tianxiao","family":"Nie","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2023,11,8]]},"reference":[{"key":"3841_CR1","doi-asserted-by":"publisher","first-page":"201401","DOI":"10.1007\/s11432-021-3235-7","volume":"64","author":"Y Hao","year":"2021","unstructured":"Hao Y, Xiang S Y, Han G Q, et al. Recent progress of integrated circuits and optoelectronic chips. Sci China Inf Sci, 2021, 64: 201401","journal-title":"Sci China Inf Sci"},{"key":"3841_CR2","doi-asserted-by":"publisher","first-page":"142403","DOI":"10.1007\/s11432-020-3244-8","volume":"65","author":"L D Wang","year":"2021","unstructured":"Wang L D, Cai W L, Cao K H, et al. Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer. Sci China Inf Sci, 2021, 65: 142403","journal-title":"Sci China Inf Sci"},{"key":"3841_CR3","doi-asserted-by":"publisher","first-page":"122406","DOI":"10.1007\/s11432-020-3189-x","volume":"65","author":"W L Cai","year":"2022","unstructured":"Cai W L, Wang M X, Cao K H, et al. Stateful implication logic based on perpendicular magnetic tunnel junctions. Sci China Inf Sci, 2022, 65: 122406","journal-title":"Sci China Inf Sci"},{"key":"3841_CR4","doi-asserted-by":"publisher","first-page":"122408","DOI":"10.1007\/s11432-021-3371-4","volume":"66","author":"S Eimer","year":"2023","unstructured":"Eimer S, Cheng H Y, Li J J, et al. Perpendicular magnetic anisotropy based spintronics devices in Pt\/Costacks under different hard and flexible substrates. Sci China Inf Sci, 2023, 66: 122408","journal-title":"Sci China Inf Sci"},{"key":"3841_CR5","doi-asserted-by":"publisher","first-page":"206401","DOI":"10.1103\/PhysRevLett.122.206401","volume":"122","author":"D Zhang","year":"2019","unstructured":"Zhang D, Shi M, Zhu T, et al. Topological axion states in the magnetic insulator MnBi2Te4 with the quantized magnetoelectric effect. Phys Rev Lett, 2019, 122: 206401","journal-title":"Phys Rev Lett"},{"key":"3841_CR6","doi-asserted-by":"publisher","first-page":"245125","DOI":"10.1103\/PhysRevB.81.245125","volume":"81","author":"J Zang","year":"2010","unstructured":"Zang J, Nagaosa N. Monopole current and unconventional Hall response on a topological insulator. Phys Rev B, 2010, 81: 245125","journal-title":"Phys Rev B"},{"key":"3841_CR7","doi-asserted-by":"publisher","first-page":"167","DOI":"10.1126\/science.1234414","volume":"340","author":"C Z Chang","year":"2013","unstructured":"Chang C Z, Zhang J, Feng X, et al. Experimental observation of the quantum anomalous Hall effect in a magnetic topological insulator. Science, 2013, 340: 167\u2013170","journal-title":"Science"},{"key":"3841_CR8","doi-asserted-by":"publisher","first-page":"137201","DOI":"10.1103\/PhysRevLett.113.137201","volume":"113","author":"X Kou","year":"2014","unstructured":"Kou X, Guo S T, Fan Y, et al. Scale-invariant quantum anomalous Hall effect in magnetic topological insulators beyond the two-dimensional limit. Phys Rev Lett, 2014, 113: 137201","journal-title":"Phys Rev Lett"},{"key":"3841_CR9","doi-asserted-by":"publisher","first-page":"34","DOI":"10.1016\/j.ssc.2014.10.022","volume":"215\u2013216","author":"X Kou","year":"2015","unstructured":"Kou X, Fan Y, Lang M, et al. Magnetic topological insulators and quantum anomalous hall effect. Solid State Commun, 2015, 215\u2013216: 34\u201353","journal-title":"Solid State Commun"},{"key":"3841_CR10","doi-asserted-by":"publisher","first-page":"9205","DOI":"10.1021\/nn4038145","volume":"7","author":"X Kou","year":"2013","unstructured":"Kou X, Lang M, Fan Y, et al. Interplay between different magnetisms in Cr-doped topological insulators. ACS Nano, 2013, 7: 9205\u20139212","journal-title":"ACS Nano"},{"key":"3841_CR11","doi-asserted-by":"publisher","first-page":"063912","DOI":"10.1063\/1.4754452","volume":"112","author":"X F Kou","year":"2012","unstructured":"Kou X F, Jiang W J, Lang M R, et al. Magnetically doped semiconducting topological insulators. J Appl Phys, 2012, 112: 063912","journal-title":"J Appl Phys"},{"key":"3841_CR12","doi-asserted-by":"publisher","first-page":"076106","DOI":"10.1063\/1.4990548","volume":"5","author":"L Zhang","year":"2017","unstructured":"Zhang L, Zhao D, Zang Y, et al. Ferromagnetism in vanadium-doped Bi2Se3 topological insulator films. APL Mater, 2017, 5: 076106","journal-title":"APL Mater"},{"key":"3841_CR13","doi-asserted-by":"publisher","first-page":"054428","DOI":"10.1103\/PhysRevB.101.054428","volume":"101","author":"K Carva","year":"2020","unstructured":"Carva K, B\u00e1la\u017e P, \u0160ebesta J, et al. Magnetic properties of Mn-doped Bi2Se3 topological insulators: ab initio calculations. Phys Rev B, 2020, 101: 054428","journal-title":"Phys Rev B"},{"key":"3841_CR14","doi-asserted-by":"publisher","first-page":"10559","DOI":"10.1038\/ncomms10559","volume":"7","author":"J S\u00e1nchez-Barriga","year":"2016","unstructured":"S\u00e1nchez-Barriga J, Varykhalov A, Springholz G, et al. Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi1\u2212xMnx)2Se3. Nat Commun, 2016, 7: 10559","journal-title":"Nat Commun"},{"key":"3841_CR15","doi-asserted-by":"publisher","first-page":"731","DOI":"10.1038\/nphys3053","volume":"10","author":"J G Checkelsky","year":"2014","unstructured":"Checkelsky J G, Yoshimi R, Tsukazaki A, et al. Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator. Nat Phys, 2014, 10: 731\u2013736","journal-title":"Nat Phys"},{"key":"3841_CR16","doi-asserted-by":"publisher","first-page":"513","DOI":"10.1038\/nature17635","volume":"533","author":"F Katmis","year":"2016","unstructured":"Katmis F, Lauter V, Nogueira F S, et al. A high-temperature ferromagnetic topological insulating phase by proximity coupling. Nature, 2016, 533: 513\u2013516","journal-title":"Nature"},{"key":"3841_CR17","doi-asserted-by":"publisher","first-page":"4567","DOI":"10.1021\/acs.nanolett.9b01495","volume":"19","author":"X Yao","year":"2019","unstructured":"Yao X, Gao B, Han M G, et al. Record high-proximity-induced anomalous hall effect in (BixSb1\u2212x)2Te3 thin film grown on CrGeTe3 substrate. Nano Lett, 2019, 19: 4567\u20134573","journal-title":"Nano Lett"},{"key":"3841_CR18","doi-asserted-by":"publisher","first-page":"3459","DOI":"10.1021\/nl500973k","volume":"14","author":"M Lang","year":"2014","unstructured":"Lang M, Montazeri M, Onbasli M C, et al. Proximity induced high-temperature magnetic order in topological insulator-ferrimagnetic insulator heterostructure. Nano Lett, 2014, 14: 3459\u20133465","journal-title":"Nano Lett"},{"key":"3841_CR19","doi-asserted-by":"publisher","first-page":"e1700307","DOI":"10.1126\/sciadv.1700307","volume":"3","author":"C Tang","year":"2017","unstructured":"Tang C, Chang C Z, Zhao G, et al. Above 400-K robust perpendicular ferromagnetic phase in a topological insulator. Sci Adv, 2017, 3: e1700307","journal-title":"Sci Adv"},{"key":"3841_CR20","doi-asserted-by":"publisher","first-page":"94","DOI":"10.1038\/nmat4783","volume":"16","author":"Q L He","year":"2017","unstructured":"He Q L, Kou X, Grutter A J, et al. Tailoring exchange couplings in magnetic topological-insulator\/antiferromagnet heterostructures. Nat Mater, 2017, 16: 94\u2013100","journal-title":"Nat Mater"},{"key":"3841_CR21","doi-asserted-by":"publisher","first-page":"2767","DOI":"10.1038\/s41467-018-05166-9","volume":"9","author":"Q L He","year":"2018","unstructured":"He Q L, Yin G, Grutter A J, et al. Exchange-biasing topological charges by antiferromagnetism. Nat Commun, 2018, 9: 2767","journal-title":"Nat Commun"},{"key":"3841_CR22","doi-asserted-by":"publisher","first-page":"13497","DOI":"10.1038\/ncomms13497","volume":"7","author":"W Liu","year":"2016","unstructured":"Liu W, Zhang H, Shi J, et al. A room-temperature magnetic semiconductor from a ferromagnetic metallic glass. Nat Commun, 2016, 7: 13497","journal-title":"Nat Commun"},{"key":"3841_CR23","doi-asserted-by":"publisher","first-page":"209","DOI":"10.1038\/nnano.2015.22","volume":"10","author":"F Matsukura","year":"2015","unstructured":"Matsukura F, Tokura Y, Ohno H. Control of magnetism by electric fields. Nat Nanotech, 2015, 10: 209\u2013220","journal-title":"Nat Nanotech"},{"key":"3841_CR24","doi-asserted-by":"publisher","first-page":"651","DOI":"10.1126\/science.1066348","volume":"295","author":"Y D Park","year":"2002","unstructured":"Park Y D, Hanbicki A T, Erwin S C, et al. A group-IV ferromagnetic semiconductor: MnxGe1\u2212x. Science, 2002, 295: 651\u2013654","journal-title":"Science"},{"key":"3841_CR25","doi-asserted-by":"publisher","first-page":"295","DOI":"10.1039\/C7NR07177A","volume":"10","author":"K Murata","year":"2018","unstructured":"Murata K, Kirkham C, Tsubomatsu S, et al. Atomic layer doping of Mn magnetic impurities from surface chains at a Ge\/Si hetero-interface. Nanoscale, 2018, 10: 295\u2013301","journal-title":"Nanoscale"},{"key":"3841_CR26","doi-asserted-by":"publisher","first-page":"152","DOI":"10.1016\/j.apsusc.2017.03.029","volume":"432","author":"S Kim","year":"2018","unstructured":"Kim S, Lee S, Woo J, et al. Growth of Bi2Se3 topological insulator thin film on Ge(1 1 1) substrate. Appl Surf Sci, 2018, 432: 152\u2013155","journal-title":"Appl Surf Sci"},{"key":"3841_CR27","doi-asserted-by":"publisher","first-page":"103702","DOI":"10.1063\/1.3585673","volume":"109","author":"L He","year":"2011","unstructured":"He L, Xiu F, Wang Y, et al. Epitaxial growth of Bi2Se3 topological insulator thin films on Si (1 1 1). J Appl Phys, 2011, 109: 103702","journal-title":"J Appl Phys"},{"key":"3841_CR28","doi-asserted-by":"publisher","first-page":"1486","DOI":"10.1021\/nl204234j","volume":"12","author":"L He","year":"2012","unstructured":"He L, Xiu F, Yu X, et al. Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film. Nano Lett, 2012, 12: 1486\u20131490","journal-title":"Nano Lett"},{"key":"3841_CR29","doi-asserted-by":"publisher","first-page":"205127","DOI":"10.1103\/PhysRevB.86.205127","volume":"86","author":"D Zhang","year":"2012","unstructured":"Zhang D, Richardella A, Rench D W, et al. Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator. Phys Rev B, 2012, 86: 205127","journal-title":"Phys Rev B"},{"key":"3841_CR30","doi-asserted-by":"publisher","first-page":"1282","DOI":"10.1038\/s41467-018-03684-0","volume":"9","author":"N Liu","year":"2018","unstructured":"Liu N, Teng J, Li Y. Two-component anomalous Hall effect in a magnetically doped topological insulator. Nat Commun, 2018, 9: 1282","journal-title":"Nat Commun"},{"key":"3841_CR31","doi-asserted-by":"publisher","first-page":"10237","DOI":"10.1021\/acsnano.5b03980","volume":"9","author":"W Liu","year":"2015","unstructured":"Liu W, West D, He L, et al. Atomic-scale magnetism of Cr-doped Bi2Se3 thin film topological insulators. ACS Nano, 2015, 9: 10237\u201310243","journal-title":"ACS Nano"},{"key":"3841_CR32","doi-asserted-by":"publisher","first-page":"1077","DOI":"10.3390\/nano11051077","volume":"11","author":"R Gracia-Abad","year":"2021","unstructured":"Gracia-Abad R, Sangiao S, Bigi C, et al. Omnipresence of weak antilocalization (WAL) in Bi2Se3 thin films: a review on its origin. Nanomaterials, 2021, 11: 1077","journal-title":"Nanomaterials"},{"key":"3841_CR33","doi-asserted-by":"publisher","first-page":"5042","DOI":"10.1021\/acsnano.8b02647","volume":"12","author":"X Che","year":"2018","unstructured":"Che X, Murata K, Pan L, et al. Proximity-induced magnetic order in a transferred topological insulator thin film on a magnetic insulator. ACS Nano, 2018, 12: 5042\u20135050","journal-title":"ACS Nano"},{"key":"3841_CR34","doi-asserted-by":"publisher","first-page":"707","DOI":"10.1143\/PTP.63.707","volume":"63","author":"S Hikami","year":"1980","unstructured":"Hikami S, Larkin A I, Nagaoka Y. Spin-orbit interaction and magnetoresistance in the two dimensional random system. Prog Theor Phys, 1980, 63: 707\u2013710","journal-title":"Prog Theor Phys"},{"key":"3841_CR35","doi-asserted-by":"publisher","first-page":"166805","DOI":"10.1103\/PhysRevLett.106.166805","volume":"106","author":"H T He","year":"2011","unstructured":"He H T, Wang G, Zhang T, et al. Impurity effect on weak antilocalization in the topological insulator Bi2Se3. Phys Rev Lett, 2011, 106: 166805","journal-title":"Phys Rev Lett"},{"key":"3841_CR36","doi-asserted-by":"publisher","first-page":"48","DOI":"10.1021\/nl303424n","volume":"13","author":"M Lang","year":"2013","unstructured":"Lang M, He L, Kou X, et al. Competing weak localization and weak antilocalization in ultrathin topological insulators. Nano Lett, 2013, 13: 48\u201353","journal-title":"Nano Lett"},{"key":"3841_CR37","doi-asserted-by":"publisher","first-page":"125138","DOI":"10.1103\/PhysRevB.84.125138","volume":"84","author":"H Z Lu","year":"2011","unstructured":"Lu H Z, Shen S Q. Weak localization of bulk channels in topological insulator thin films. Phys Rev B, 2011, 84: 125138","journal-title":"Phys Rev B"},{"key":"3841_CR38","doi-asserted-by":"publisher","first-page":"616","DOI":"10.1038\/nphys2351","volume":"8","author":"S Y Xu","year":"2012","unstructured":"Xu S Y, Neupane M, Liu C, et al. Hedgehog spin texture and Berry\u2019s phase tuning in a magnetic topological insulator. Nat Phys, 2012, 8: 616\u2013622","journal-title":"Nat Phys"},{"key":"3841_CR39","doi-asserted-by":"publisher","first-page":"7367","DOI":"10.1088\/0022-3719\/15\/36\/018","volume":"15","author":"B L Altshuler","year":"1982","unstructured":"Altshuler B L, Aronov A G, Khmelnitsky D E. Effects of electron-electron collisions with small energy transfers on quantum localisation. J Phys C-Solid State Phys, 1982, 15: 7367\u20137386","journal-title":"J Phys C-Solid State Phys"},{"key":"3841_CR40","doi-asserted-by":"publisher","first-page":"056501","DOI":"10.1088\/0034-4885\/76\/5\/056501","volume":"76","author":"J H Bardarson","year":"2013","unstructured":"Bardarson J H, Moore J E. Quantum interference and Aharonov-Bohm oscillations in topological insulators. Rep Prog Phys, 2013, 76: 056501","journal-title":"Rep Prog Phys"},{"key":"3841_CR41","doi-asserted-by":"publisher","first-page":"1879","DOI":"10.1039\/C5NR07296D","volume":"8","author":"Y Jing","year":"2016","unstructured":"Jing Y, Huang S, Zhang K, et al. Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film. Nanoscale, 2016, 8: 1879\u20131885","journal-title":"Nanoscale"},{"key":"3841_CR42","doi-asserted-by":"publisher","first-page":"165440","DOI":"10.1103\/PhysRevB.83.165440","volume":"83","author":"M Liu","year":"2011","unstructured":"Liu M, Chang C Z, Zhang Z, et al. Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two-dimensional limit. Phys Rev B, 2011, 83: 165440","journal-title":"Phys Rev B"},{"key":"3841_CR43","doi-asserted-by":"publisher","first-page":"076801","DOI":"10.1103\/PhysRevLett.107.076801","volume":"107","author":"H Z Lu","year":"2011","unstructured":"Lu H Z, Shi J, Shen S Q. Competition between weak localization and antilocalization in topological surface states. Phys Rev Lett, 2011, 107: 076801","journal-title":"Phys Rev Lett"},{"key":"3841_CR44","doi-asserted-by":"publisher","first-page":"056801","DOI":"10.1103\/PhysRevLett.112.056801","volume":"112","author":"C Z Chang","year":"2014","unstructured":"Chang C Z, Tang P, Wang Y L, et al. Chemical-potential-dependent gap opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms. Phys Rev Lett, 2014, 112: 056801","journal-title":"Phys Rev Lett"},{"key":"3841_CR45","doi-asserted-by":"publisher","first-page":"1316","DOI":"10.1073\/pnas.1424322112","volume":"112","author":"I Lee","year":"2015","unstructured":"Lee I, Kim C K, Lee J, et al. Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Crx(Bi0.1 Sb0.9)2\u2212xTe3. Proc Natl Acad Sci USA, 2015, 112: 1316\u20131321","journal-title":"Proc Natl Acad Sci USA"},{"key":"3841_CR46","doi-asserted-by":"publisher","first-page":"2107520","DOI":"10.1002\/adma.202107520","volume":"34","author":"Q Li","year":"2022","unstructured":"Li Q, Trang C X, Wu W, et al. Large magnetic gap in a designer ferromagnet-topological insulator-ferromagnet heterostructure. Adv Mater, 2022, 34: 2107520","journal-title":"Adv Mater"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-023-3841-9.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-023-3841-9\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-023-3841-9.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,1,18]],"date-time":"2025-01-18T21:20:55Z","timestamp":1737235255000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-023-3841-9"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,11,8]]},"references-count":46,"journal-issue":{"issue":"12","published-print":{"date-parts":[[2023,12]]}},"alternative-id":["3841"],"URL":"https:\/\/doi.org\/10.1007\/s11432-023-3841-9","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,11,8]]},"assertion":[{"value":"11 March 2023","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"3 June 2023","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"4 August 2023","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"8 November 2023","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"222403"}}