{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,9]],"date-time":"2026-04-09T06:07:04Z","timestamp":1775714824429,"version":"3.50.1"},"reference-count":47,"publisher":"Springer Science and Business Media LLC","issue":"8","license":[{"start":{"date-parts":[[2024,7,15]],"date-time":"2024-07-15T00:00:00Z","timestamp":1721001600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2024,7,15]],"date-time":"2024-07-15T00:00:00Z","timestamp":1721001600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2024,8]]},"DOI":"10.1007\/s11432-023-3932-2","type":"journal-article","created":{"date-parts":[[2024,7,17]],"date-time":"2024-07-17T23:33:42Z","timestamp":1721259222000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes"],"prefix":"10.1007","volume":"67","author":[{"given":"Keqin","family":"Liu","sequence":"first","affiliation":[]},{"given":"Bingjie","family":"Dang","sequence":"additional","affiliation":[]},{"given":"Zhiyu","family":"Yang","sequence":"additional","affiliation":[]},{"given":"Teng","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Zhen","family":"Yang","sequence":"additional","affiliation":[]},{"given":"Jinxuan","family":"Bai","sequence":"additional","affiliation":[]},{"given":"Zelun","family":"Pan","sequence":"additional","affiliation":[]},{"given":"Ru","family":"Huang","sequence":"additional","affiliation":[]},{"given":"Yuchao","family":"Yang","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2024,7,15]]},"reference":[{"key":"3932_CR1","doi-asserted-by":"publisher","first-page":"478","DOI":"10.1038\/s41586-020-2208-x","volume":"580","author":"S S Cheema","year":"2020","unstructured":"Cheema S S, Kwon D, Shanker N, et al. Enhanced ferroelectricity in ultrathin films grown directly on silicon. Nature, 2020, 580: 478\u2013482","journal-title":"Nature"},{"key":"3932_CR2","doi-asserted-by":"publisher","first-page":"1343","DOI":"10.1126\/science.aba0067","volume":"369","author":"H J Lee","year":"2020","unstructured":"Lee H J, Lee M, Lee K, et al. Scale-free ferroelectricity induced by flat phonon bands in HfO2. Science, 2020, 369: 1343\u20131347","journal-title":"Science"},{"key":"3932_CR3","unstructured":"Bae H, Moon T, Nam S G, et al. Ferroelectric diodes with sub-ns and sub-fJ switching and its programmable network for logic-in-memory applications. In: Proceedings of IEEE Symposium on VLSI Technology (VLSI), 2021"},{"key":"3932_CR4","doi-asserted-by":"publisher","first-page":"202401","DOI":"10.1007\/s11432-020-2866-0","volume":"63","author":"R Yuan","year":"2020","unstructured":"Yuan R, Ma M Y, Xu L Y, et al. Efficient 16 Boolean logic and arithmetic based on bipolar oxide memristors. Sci China Inf Sci, 2020, 63: 202401","journal-title":"Sci China Inf Sci"},{"key":"3932_CR5","doi-asserted-by":"publisher","first-page":"2044","DOI":"10.1021\/acs.nanolett.9b00180","volume":"19","author":"M K Kim","year":"2019","unstructured":"Kim M K, Lee J S. Ferroelectric analog synaptic transistors. Nano Lett, 2019, 19: 2044\u20132050","journal-title":"Nano Lett"},{"key":"3932_CR6","doi-asserted-by":"crossref","unstructured":"Jerry M, Pai-Yu C, Jianchi Z, et al. Ferroelectric FET analog synapse for acceleration of deep neural network training. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2017","DOI":"10.1109\/IEDM.2017.8268338"},{"key":"3932_CR7","doi-asserted-by":"publisher","first-page":"761","DOI":"10.1038\/s41928-022-00847-2","volume":"5","author":"K Liu","year":"2022","unstructured":"Liu K, Zhang T, Dang B, et al. An optoelectronic synapse based on \u03b1-In2Se3 with controllable temporal dynamics for multimode and multiscale reservoir computing. Nat Electron, 2022, 5: 761\u2013773","journal-title":"Nat Electron"},{"key":"3932_CR8","doi-asserted-by":"publisher","first-page":"122410","DOI":"10.1007\/s11432-021-3316-x","volume":"65","author":"H J Zhou","year":"2022","unstructured":"Zhou H J, Li Y, Miao X S. Low-time-complexity document clustering using memristive dot product engine. Sci China Inf Sci, 2022, 65: 122410","journal-title":"Sci China Inf Sci"},{"key":"3932_CR9","doi-asserted-by":"publisher","first-page":"221402","DOI":"10.1007\/s11432-021-3327-7","volume":"64","author":"C D Cheng","year":"2021","unstructured":"Cheng C D, Tiw P J, Cai Y M, et al. In-memory computing with emerging nonvolatile memory devices. Sci China Inf Sci, 2021, 64: 221402","journal-title":"Sci China Inf Sci"},{"key":"3932_CR10","doi-asserted-by":"publisher","first-page":"162401","DOI":"10.1007\/s11432-021-3326-6","volume":"65","author":"Y Zhu","year":"2022","unstructured":"Zhu Y, He Y L, Chen C S, et al. IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics. Sci China Inf Sci, 2022, 65: 162401","journal-title":"Sci China Inf Sci"},{"key":"3932_CR11","doi-asserted-by":"publisher","first-page":"102903","DOI":"10.1063\/1.3634052","volume":"99","author":"T S B\u00f6scke","year":"2011","unstructured":"B\u00f6scke T S, M\u00fcller J, Br\u00e4uhaus D, et al. Ferroelectricity in hafnium oxide thin films. Appl Phys Lett, 2011, 99: 102903","journal-title":"Appl Phys Lett"},{"key":"3932_CR12","doi-asserted-by":"publisher","first-page":"112904","DOI":"10.1063\/1.3636434","volume":"99","author":"T S B\u00f6scke","year":"2011","unstructured":"B\u00f6scke T S, Teichert S, Br\u00e4uhaus D, et al. Phase transitions in ferroelectric silicon doped hafnium oxide. Appl Phys Lett, 2011, 99: 112904","journal-title":"Appl Phys Lett"},{"key":"3932_CR13","doi-asserted-by":"publisher","first-page":"2412","DOI":"10.1002\/adfm.201103119","volume":"22","author":"S Mueller","year":"2012","unstructured":"Mueller S, Mueller J, Singh A, et al. Incipient ferroelectricity in Al-doped HfO2 thin films. Adv Funct Mater, 2012, 22: 2412\u20132417","journal-title":"Adv Funct Mater"},{"key":"3932_CR14","doi-asserted-by":"crossref","unstructured":"Zhou J, Zhou Z, Jiao L, et al. Al-doped and deposition temperature-engineered HfO2 near morphotropic phase boundary with record dielectric permittivity (\u223c68). In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2021","DOI":"10.1109\/IEDM19574.2021.9720632"},{"key":"3932_CR15","doi-asserted-by":"publisher","first-page":"082905","DOI":"10.1063\/1.4747209","volume":"101","author":"T Olsen","year":"2012","unstructured":"Olsen T, Schr\u00f6der U, M\u00fcller S, et al. Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties. Appl Phys Lett, 2012, 101: 082905","journal-title":"Appl Phys Lett"},{"key":"3932_CR16","doi-asserted-by":"publisher","first-page":"114113","DOI":"10.1063\/1.3667205","volume":"110","author":"J M\u00fcller","year":"2011","unstructured":"M\u00fcller J, Schr\u00f6der U, B\u00f6scke T S, et al. Ferroelectricity in yttrium-doped hafnium oxide. J Appl Phys, 2011, 110: 114113","journal-title":"J Appl Phys"},{"key":"3932_CR17","doi-asserted-by":"publisher","first-page":"4318","DOI":"10.1021\/nl302049k","volume":"12","author":"J M\u00fcller","year":"2012","unstructured":"M\u00fcller J, B\u00f6scke T S, Schr\u00f6der U, et al. Ferroelectricity in simple binary ZrO2 and HfO2. Nano Lett, 2012, 12: 4318\u20134323","journal-title":"Nano Lett"},{"key":"3932_CR18","doi-asserted-by":"publisher","first-page":"112901","DOI":"10.1063\/1.3636417","volume":"99","author":"J M\u00fcller","year":"2011","unstructured":"M\u00fcller J, B\u00f6scke T S, Br\u00e4uhaus D, et al. Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications. Appl Phys Lett, 2011, 99: 112901","journal-title":"Appl Phys Lett"},{"key":"3932_CR19","doi-asserted-by":"publisher","first-page":"242905","DOI":"10.1063\/1.4811483","volume":"102","author":"M H Park","year":"2013","unstructured":"Park M H, Kim H J, Kim Y J, et al. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature. Appl Phys Lett, 2013, 102: 242905","journal-title":"Appl Phys Lett"},{"key":"3932_CR20","doi-asserted-by":"publisher","first-page":"28489","DOI":"10.1016\/j.ceramint.2022.06.163","volume":"48","author":"Y Peng","year":"2022","unstructured":"Peng Y, Wang Z, Xiao W, et al. Effect of thickness scaling on the switching dynamics of ferroelectric HfO2-ZrO2 capacitors. Ceramics Int, 2022, 48: 28489\u201328495","journal-title":"Ceramics Int"},{"key":"3932_CR21","doi-asserted-by":"crossref","unstructured":"Lin Y D, Lee H Y, Tang Y T, et al. 3D scalable, wake-up free, and highly reliable FRAM technology with stress-engineered HfZrOx. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2019","DOI":"10.1109\/IEDM19573.2019.8993504"},{"key":"3932_CR22","doi-asserted-by":"publisher","first-page":"216","DOI":"10.1109\/LED.2021.3135961","volume":"43","author":"Y Peng","year":"2022","unstructured":"Peng Y, Xiao W, Liu Y, et al. HfO2-ZrO2 superlattice ferroelectric capacitor with improved endurance performance and higher fatigue recovery capability. IEEE Electron Device Lett, 2022, 43: 216\u2013219","journal-title":"IEEE Electron Device Lett"},{"key":"3932_CR23","doi-asserted-by":"publisher","first-page":"242901","DOI":"10.1063\/5.0127136","volume":"121","author":"Z Gong","year":"2022","unstructured":"Gong Z, Chen J, Peng Y, et al. Physical origin of the endurance improvement for HfO2-ZrO2 superlattice ferroelectric film. Appl Phys Lett, 2022, 121: 242901","journal-title":"Appl Phys Lett"},{"key":"3932_CR24","doi-asserted-by":"crossref","unstructured":"Liang Z, Tang K, Dong J, et al. A novel high-endurance FeFET memory device based on ZrO2 anti-ferroelectric and IGZO channel. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2021","DOI":"10.1109\/IEDM19574.2021.9720627"},{"key":"3932_CR25","doi-asserted-by":"publisher","first-page":"1806037","DOI":"10.1002\/adfm.201806037","volume":"28","author":"H Y Yoong","year":"2018","unstructured":"Yoong H Y, Wu H, Zhao J, et al. Epitaxial ferroelectric Hf0.5Zr0.5O2 thin films and their implementations in memristors for brain-inspired computing. Adv Funct Mater, 2018, 28: 1806037","journal-title":"Adv Funct Mater"},{"key":"3932_CR26","doi-asserted-by":"crossref","unstructured":"Fujii S, Kamimuta Y, Ino T, et al. First demonstration and performance improvement of ferroelectric HfO2-based resistive switch with low operation current and intrinsic diode property. In: Proceedings of IEEE Symposium on VLSI Technology (VLSI), 2016","DOI":"10.1109\/VLSIT.2016.7573413"},{"key":"3932_CR27","doi-asserted-by":"publisher","first-page":"1811","DOI":"10.1002\/adma.201404531","volume":"27","author":"M H Park","year":"2015","unstructured":"Park M H, Lee Y H, Kim H J, et al. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films. Adv Mater, 2015, 27: 1811\u20131831","journal-title":"Adv Mater"},{"key":"3932_CR28","doi-asserted-by":"publisher","first-page":"1391","DOI":"10.1038\/s41467-020-15159-2","volume":"11","author":"Q Luo","year":"2020","unstructured":"Luo Q, Cheng Y, Yang J, et al. A highly CMOS compatible hafnia-based ferroelectric diode. Nat Commun, 2020, 11: 1391","journal-title":"Nat Commun"},{"key":"3932_CR29","doi-asserted-by":"publisher","first-page":"022907","DOI":"10.1063\/1.4993739","volume":"111","author":"G Karbasian","year":"2017","unstructured":"Karbasian G, dos Reis R, Yadav A K, et al. Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2. Appl Phys Lett, 2017, 111: 022907","journal-title":"Appl Phys Lett"},{"key":"3932_CR30","doi-asserted-by":"publisher","first-page":"112901","DOI":"10.1063\/1.5090036","volume":"114","author":"C Zacharaki","year":"2019","unstructured":"Zacharaki C, Tsipas P, Chaitoglou S, et al. Very large remanent polarization in ferroelectric Hf1\u2212xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition. Appl Phys Lett, 2019, 114: 112901","journal-title":"Appl Phys Lett"},{"key":"3932_CR31","doi-asserted-by":"publisher","first-page":"1207","DOI":"10.1109\/LED.2018.2846570","volume":"39","author":"R R Cao","year":"2018","unstructured":"Cao R R, Wang Y, Zhao S J, et al. Effects of capping electrode on ferroelectric properties of Hf0.5Zr0.5O2 thin films. IEEE Electron Device Lett, 2018, 39: 1207\u20131210","journal-title":"IEEE Electron Device Lett"},{"key":"3932_CR32","doi-asserted-by":"publisher","first-page":"011204","DOI":"10.1116\/1.5002558","volume":"36","author":"Y C Lin","year":"2018","unstructured":"Lin Y C, McGuire F, Franklin A D. Realizing ferroelectric Hf0.5Zr0.5O2 with elemental capping layers. J Vacuum Sci Tech B, 2018, 36: 011204","journal-title":"J Vacuum Sci Tech B"},{"key":"3932_CR33","doi-asserted-by":"publisher","first-page":"335201","DOI":"10.1088\/1361-6528\/aac6b3","volume":"29","author":"Y Goh","year":"2018","unstructured":"Goh Y, Jeon S. The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2. Nanotechnology, 2018, 29: 335201","journal-title":"Nanotechnology"},{"key":"3932_CR34","doi-asserted-by":"publisher","first-page":"262904","DOI":"10.1063\/1.4954942","volume":"108","author":"T Shiraishi","year":"2016","unstructured":"Shiraishi T, Katayama K, Yokouchi T, et al. Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films. Appl Phys Lett, 2016, 108: 262904","journal-title":"Appl Phys Lett"},{"key":"3932_CR35","doi-asserted-by":"publisher","first-page":"580","DOI":"10.1038\/s41928-019-0338-7","volume":"2","author":"M Si","year":"2019","unstructured":"Si M, Saha A K, Gao S, et al. A ferroelectric semiconductor field-effect transistor. Nat Electron, 2019, 2: 580\u2013586","journal-title":"Nat Electron"},{"key":"3932_CR36","doi-asserted-by":"publisher","first-page":"5508","DOI":"10.1021\/acs.nanolett.7b02198","volume":"17","author":"Y Zhou","year":"2017","unstructured":"Zhou Y, Wu D, Zhu Y, et al. Out-of-plane piezoelectricity and ferroelectricity in layered \u03b1-In2Se3 nanoflakes. Nano Lett, 2017, 17: 5508\u20135513","journal-title":"Nano Lett"},{"key":"3932_CR37","doi-asserted-by":"publisher","first-page":"55","DOI":"10.1038\/s41565-022-01257-3","volume":"18","author":"W Han","year":"2023","unstructured":"Han W, Zheng X, Yang K, et al. Phase-controllable large-area two-dimensional In2Se3 and ferroelectric heterophase junction. Nat Nanotechnol, 2023, 18: 55\u201363","journal-title":"Nat Nanotechnol"},{"key":"3932_CR38","doi-asserted-by":"publisher","first-page":"023711","DOI":"10.1063\/1.3462440","volume":"108","author":"W Melitz","year":"2010","unstructured":"Melitz W, Shen J, Lee S, et al. Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces. J Appl Phys, 2010, 108: 023711","journal-title":"J Appl Phys"},{"key":"3932_CR39","doi-asserted-by":"publisher","first-page":"523","DOI":"10.1109\/TED.2020.3046173","volume":"68","author":"Y Lee","year":"2021","unstructured":"Lee Y, Goh Y, Hwang J, et al. The influence of top and bottom metal electrodes on ferroelectricity of hafnia. IEEE Trans Electron Devices, 2021, 68: 523\u2013528","journal-title":"IEEE Trans Electron Devices"},{"key":"3932_CR40","doi-asserted-by":"publisher","first-page":"102894","DOI":"10.1016\/j.mtcomm.2021.102894","volume":"29","author":"N Dong","year":"2021","unstructured":"Dong N, Wang J, Ma H, et al. Effects of Nd content on thermal expansion behavior of Mg-Nd alloys. Mater Today Commun, 2021, 29: 102894","journal-title":"Mater Today Commun"},{"key":"3932_CR41","doi-asserted-by":"publisher","first-page":"2927","DOI":"10.1111\/j.1151-2916.1999.tb02182.x","volume":"82","author":"H A Bruck","year":"1999","unstructured":"Bruck H A, Rabin B H. Evaluation of rule-of-mixtures predictions of thermal expansion in powder-processed Ni-Al2O3 composites. J Am Ceramic Soc, 1999, 82: 2927\u20132930","journal-title":"J Am Ceramic Soc"},{"key":"3932_CR42","doi-asserted-by":"publisher","first-page":"7014","DOI":"10.1039\/D2NR06582G","volume":"15","author":"L Chen","year":"2023","unstructured":"Chen L, Liang Z, Shao S, et al. First direct observation of the built-in electric field and oxygen vacancy migration in ferroelectric Hf0.5Zr0.5O2 film during electrical cycling. Nanoscale, 2023, 15: 7014\u20137022","journal-title":"Nanoscale"},{"key":"3932_CR43","doi-asserted-by":"publisher","first-page":"93","DOI":"10.1109\/TDMR.2012.2216269","volume":"13","author":"S Mueller","year":"2013","unstructured":"Mueller S, Muller J, Schroeder U, et al. Reliability characteristics of ferroelectric Si:HfO2 thin films for memory applications. IEEE Trans Device Mater Relib, 2013, 13: 93\u201397","journal-title":"IEEE Trans Device Mater Relib"},{"key":"3932_CR44","doi-asserted-by":"publisher","first-page":"1901180","DOI":"10.1002\/admi.201901180","volume":"6","author":"F Mehmood","year":"2019","unstructured":"Mehmood F, Hoffmann M, Lomenzo P D, et al. Bulk depolarization fields as a major contributor to the ferroelectric reliability performance in lanthanum doped Hf0.5Zr0.5O2 capacitors. Adv Mater Inter, 2019, 6: 1901180","journal-title":"Adv Mater Inter"},{"key":"3932_CR45","doi-asserted-by":"publisher","first-page":"101587","DOI":"10.1016\/j.apmt.2022.101587","volume":"29","author":"Y Wang","year":"2022","unstructured":"Wang Y, Wang Q, Zhao J, et al. A robust high-performance electronic synapse based on epitaxial ferroelectric Hf0.5Zr0.5O2 films with uniform polarization and high Curie temperature. Appl Mater Today, 2022, 29: 101587","journal-title":"Appl Mater Today"},{"key":"3932_CR46","doi-asserted-by":"publisher","first-page":"2200265","DOI":"10.1002\/aelm.202200265","volume":"8","author":"U Schroeder","year":"2022","unstructured":"Schroeder U, Mittmann T, Materano M, et al. Temperature-dependent phase transitions in HfxZr1\u2212xO2 mixed oxides: indications of a proper ferroelectric material. Adv Elect Mater, 2022, 8: 2200265","journal-title":"Adv Elect Mater"},{"key":"3932_CR47","doi-asserted-by":"publisher","first-page":"3667","DOI":"10.1007\/s12274-021-4047-y","volume":"15","author":"P Yuan","year":"2022","unstructured":"Yuan P, Mao G Q, Cheng Y, et al. Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics. Nano Res, 2022, 15: 3667\u20133674","journal-title":"Nano Res"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-023-3932-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-023-3932-2\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-023-3932-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,9,19]],"date-time":"2025-09-19T21:03:20Z","timestamp":1758315800000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-023-3932-2"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,7,15]]},"references-count":47,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2024,8]]}},"alternative-id":["3932"],"URL":"https:\/\/doi.org\/10.1007\/s11432-023-3932-2","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,7,15]]},"assertion":[{"value":"15 August 2023","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"6 October 2023","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"4 January 2024","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"15 July 2024","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"182402"}}