{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,16]],"date-time":"2026-06-16T19:29:17Z","timestamp":1781638157497,"version":"3.54.5"},"reference-count":28,"publisher":"Springer Science and Business Media LLC","issue":"6","license":[{"start":{"date-parts":[[2024,5,15]],"date-time":"2024-05-15T00:00:00Z","timestamp":1715731200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2024,5,15]],"date-time":"2024-05-15T00:00:00Z","timestamp":1715731200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2024,6]]},"DOI":"10.1007\/s11432-023-3942-2","type":"journal-article","created":{"date-parts":[[2024,5,18]],"date-time":"2024-05-18T05:02:07Z","timestamp":1716008527000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":16,"title":["Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors"],"prefix":"10.1007","volume":"67","author":[{"given":"Zizheng","family":"Liu","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qing","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaohe","family":"Huang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chunsen","family":"Liu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Peng","family":"Zhou","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2024,5,15]]},"reference":[{"key":"3942_CR1","doi-asserted-by":"publisher","first-page":"507","DOI":"10.1038\/s41586-019-1573-9","volume":"573","author":"D Akinwande","year":"2019","unstructured":"Akinwande D, Huyghebaert C, Wang C H, et al. Graphene and two-dimensional materials for silicon technology. Nature, 2019, 573: 507\u2013518","journal-title":"Nature"},{"key":"3942_CR2","doi-asserted-by":"publisher","first-page":"122405","DOI":"10.1007\/s11432-021-3483-6","volume":"66","author":"G D Qi","year":"2023","unstructured":"Qi G D, Chen X Y, Hu G X, et al. Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors. Sci China Inf Sci, 2023, 66: 122405","journal-title":"Sci China Inf Sci"},{"key":"3942_CR3","doi-asserted-by":"publisher","first-page":"70","DOI":"10.1038\/s41586-019-1052-3","volume":"568","author":"Y Wang","year":"2019","unstructured":"Wang Y, Kim J C, Wu R J, et al. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors. Nature, 2019, 568: 70\u201374","journal-title":"Nature"},{"key":"3942_CR4","doi-asserted-by":"publisher","first-page":"211","DOI":"10.1038\/s41586-021-03472-9","volume":"593","author":"P C Shen","year":"2021","unstructured":"Shen P C, Su C, Lin Y X, et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature, 2021, 593: 211\u2013217","journal-title":"Nature"},{"key":"3942_CR5","doi-asserted-by":"publisher","first-page":"470","DOI":"10.1038\/s41586-023-05819-w","volume":"616","author":"J F Jiang","year":"2023","unstructured":"Jiang J F, Xu L, Qiu C G, et al. Ballistic two-dimensional InSe transistors. Nature, 2023, 616: 470\u2013475","journal-title":"Nature"},{"key":"3942_CR6","doi-asserted-by":"publisher","first-page":"1225","DOI":"10.1038\/s41563-022-01383-2","volume":"21","author":"S Y Wang","year":"2022","unstructured":"Wang S Y, Liu X X, Xu M S, et al. Two-dimensional devices and integration towards the silicon lines. Nat Mater, 2022, 21: 1225\u20131239","journal-title":"Nat Mater"},{"key":"3942_CR7","doi-asserted-by":"publisher","first-page":"696","DOI":"10.1038\/s41586-018-0129-8","volume":"557","author":"Y Liu","year":"2018","unstructured":"Liu Y, Guo J, Zhu E B, et al. Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions. Nature, 2018, 557: 696\u2013700","journal-title":"Nature"},{"key":"3942_CR8","doi-asserted-by":"publisher","first-page":"3824","DOI":"10.1021\/acs.nanolett.6b01309","volume":"16","author":"C D English","year":"2016","unstructured":"English C D, Shine G, Dorgan V E, et al. Improved contacts to MoS2 transistors by ultra-high vacuum metal deposition. Nano Lett, 2016, 16: 3824\u20133830","journal-title":"Nano Lett"},{"key":"3942_CR9","doi-asserted-by":"publisher","first-page":"274","DOI":"10.1038\/s41586-022-05431-4","volume":"613","author":"W S Li","year":"2023","unstructured":"Li W S, Gong X S, Yu Z H, et al. Approaching the quantum limit in two-dimensional semiconductor contacts. Nature, 2023, 613: 274\u2013279","journal-title":"Nature"},{"key":"3942_CR10","unstructured":"Lin Y, Shen P C, Su C, et al. Contact engineering for high-performance N-type 2D semiconductor transistors. In: Proceedings of the IEEE International Electron Devices Meeting, San Francisco, 2021"},{"key":"3942_CR11","doi-asserted-by":"publisher","first-page":"261901","DOI":"10.1063\/5.0097423","volume":"120","author":"P Z Zhang","year":"2022","unstructured":"Zhang P Z, Di B Y, Lei W Y, et al. Reduced Schottky barrier height at metal\/CVD-grown MoTe2 interface. Appl Phys Lett, 2022, 120: 261901","journal-title":"Appl Phys Lett"},{"key":"3942_CR12","doi-asserted-by":"crossref","unstructured":"Ju S H, Qiu L P, Zhou J, et al. Electrical contact properties between Yb and few-layer WS2. Appl Phys Lett, 2022, 120","DOI":"10.1063\/5.0095493"},{"key":"3942_CR13","doi-asserted-by":"crossref","unstructured":"Li W S, Fan D X, Shao L W, et al. High-performance CVD MoS2 transistors with self-aligned top-gate and Bi contact. In: Proceedings of the IEEE International Electron Devices Meeting, San Francisco, 2021","DOI":"10.1109\/IEDM19574.2021.9720595"},{"key":"3942_CR14","doi-asserted-by":"publisher","first-page":"69","DOI":"10.1038\/s41586-022-04523-5","volume":"605","author":"L Liu","year":"2022","unstructured":"Liu L, Li T T, Ma L, et al. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire. Nature, 2022, 605: 69\u201375","journal-title":"Nature"},{"key":"3942_CR15","doi-asserted-by":"crossref","unstructured":"Chou A S, Wu T, Cheng C C, et al. Antimony semimetal contact with enhanced thermal stability for high performance 2D electronics. In: Proceedings of the IEEE International Electron Devices Meeting, San Francisco, 2021","DOI":"10.1109\/IEDM19574.2021.9720608"},{"key":"3942_CR16","doi-asserted-by":"crossref","unstructured":"O\u2019Brien K P, Dorow C J, Penumatcha A, et al. Advancing 2D monolayer CMOS through contact, channel and interface engineering. In: Proceedings of the IEEE International Electron Devices Meeting, San Francisco, 2021","DOI":"10.1109\/IEDM19574.2021.9720651"},{"key":"3942_CR17","unstructured":"Liao P Y, Alajlouni S, Zhang Z, et al. Transient thermal and electrical co-optimization of BEOL top-gated ALD In2O3 FETs on various thermally conductive substrates including diamond. In: Proceedings of the IEEE International Electron Devices Meeting, San Francisco, 2022"},{"key":"3942_CR18","doi-asserted-by":"publisher","first-page":"7667","DOI":"10.1021\/acs.nanolett.2c02901","volume":"22","author":"X H Shi","year":"2022","unstructured":"Shi X H, Li X F, Guo Q, et al. Improved self-heating in short-channel monolayer WS2 transistors with high-thermal conductivity BeO dielectrics. Nano Lett, 2022, 22: 7667\u20137673","journal-title":"Nano Lett"},{"key":"3942_CR19","doi-asserted-by":"publisher","first-page":"2370130","DOI":"10.1002\/adma.202370130","volume":"35","author":"Y H Wu","year":"2023","unstructured":"Wu Y H, Xin Z Q, Zhang Z B, et al. All-transfer electrode interface engineering toward harsh-environment-resistant MoS2 Field-effect transistors (Adv. Mater. 18\/2023). Adv Mater, 2023, 35: 2370130","journal-title":"Adv Mater"},{"key":"3942_CR20","doi-asserted-by":"publisher","first-page":"903","DOI":"10.1126\/science.aba1416","volume":"367","author":"F Liu","year":"2020","unstructured":"Liu F, Wu W J, Bai Y S, et al. Disassembling 2D van der Waals crystals into macroscopic monolayers and reassembling into artificial lattices. Science, 2020, 367: 903\u2013906","journal-title":"Science"},{"key":"3942_CR21","doi-asserted-by":"publisher","first-page":"1231","DOI":"10.1038\/s41565-021-00966-5","volume":"16","author":"W Q Meng","year":"2021","unstructured":"Meng W Q, Xu F F, Yu Z H, et al. Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix. Nat Nanotechnol, 2021, 16: 1231\u20131236","journal-title":"Nat Nanotechnol"},{"key":"3942_CR22","doi-asserted-by":"publisher","first-page":"032002","DOI":"10.1088\/2053-1583\/ac016f","volume":"8","author":"X S Zhang","year":"2021","unstructured":"Zhang X S, Li Y, Mu W Q, et al. Advanced tape-exfoliated method for preparing large-area 2D monolayers: a review. 2D Mater, 2021, 8: 032002","journal-title":"2D Mater"},{"key":"3942_CR23","doi-asserted-by":"publisher","first-page":"8729","DOI":"10.1021\/acsnano.5b04265","volume":"9","author":"J Y Jia","year":"2015","unstructured":"Jia J Y, Jang S K, Lai S, et al. Plasma-treated thickness-controlled two-dimensional black phosphorus and its electronic transport properties. ACS Nano, 2015, 9: 8729\u20138736","journal-title":"ACS Nano"},{"key":"3942_CR24","doi-asserted-by":"publisher","first-page":"7702","DOI":"10.1038\/ncomms8702","volume":"6","author":"V Tayari","year":"2015","unstructured":"Tayari V, Hemsworth N, Fakih I, et al. Two-dimensional magnetotransport in a black phosphorus naked quantum well. Nat Commun, 2015, 6: 7702","journal-title":"Nat Commun"},{"key":"3942_CR25","doi-asserted-by":"publisher","first-page":"35698","DOI":"10.1021\/acsami.0c08647","volume":"12","author":"J L Doherty","year":"2020","unstructured":"Doherty J L, Noyce S G, Cheng Z, et al. Capping layers to improve the electrical stress stability of MoS2 transistors. ACS Appl Mater Interfaces, 2020, 12: 35698\u201335706","journal-title":"ACS Appl Mater Interfaces"},{"key":"3942_CR26","doi-asserted-by":"publisher","first-page":"493","DOI":"10.1007\/s11669-012-0092-2","volume":"33","author":"H Okamoto","year":"2012","unstructured":"Okamoto H. Bi-Sb (Bismuth-Antimony). J Phase Equilib Diffus, 2012, 33: 493\u2013494","journal-title":"J Phase Equilib Diffus"},{"key":"3942_CR27","doi-asserted-by":"publisher","first-page":"2201916","DOI":"10.1002\/adma.202201916","volume":"34","author":"Y Shen","year":"2022","unstructured":"Shen Y, Dong Z Y, Sun Y B, et al. The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms. Adv Mater, 2022, 34: 2201916","journal-title":"Adv Mater"},{"key":"3942_CR28","doi-asserted-by":"publisher","first-page":"51","DOI":"10.1038\/s41699-022-00327-3","volume":"6","author":"X H Huang","year":"2022","unstructured":"Huang X H, Liu C S, Zhou P. 2D semiconductors for specific electronic applications: from device to system. npj 2D Mater Appl, 2022, 6: 51","journal-title":"npj 2D Mater Appl"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-023-3942-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-023-3942-2\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-023-3942-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,9,5]],"date-time":"2025-09-05T19:19:48Z","timestamp":1757099988000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-023-3942-2"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,5,15]]},"references-count":28,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2024,6]]}},"alternative-id":["3942"],"URL":"https:\/\/doi.org\/10.1007\/s11432-023-3942-2","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,5,15]]},"assertion":[{"value":"23 October 2023","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"7 December 2023","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"22 January 2024","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"15 May 2024","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"160402"}}