{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,31]],"date-time":"2025-12-31T12:09:28Z","timestamp":1767182968646,"version":"3.44.0"},"reference-count":33,"publisher":"Springer Science and Business Media LLC","issue":"6","license":[{"start":{"date-parts":[[2024,4,26]],"date-time":"2024-04-26T00:00:00Z","timestamp":1714089600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2024,4,26]],"date-time":"2024-04-26T00:00:00Z","timestamp":1714089600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2024,6]]},"DOI":"10.1007\/s11432-024-3993-5","type":"journal-article","created":{"date-parts":[[2024,4,29]],"date-time":"2024-04-29T11:01:57Z","timestamp":1714388517000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory"],"prefix":"10.1007","volume":"67","author":[{"given":"Zheng","family":"Bian","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Feng","family":"Tian","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zongwen","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiangwei","family":"Su","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tianjiao","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jialei","family":"Miao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bin","family":"Yu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yang","family":"Xu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuda","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2024,4,26]]},"reference":[{"key":"3993_CR1","unstructured":"Clavelier L, Deguet C, Cioccio L D, et al. Engineered substrates for future More Moore and More than Moore integrated devices. In: Proceedings of International Electron Devices Meeting (IEDM), 2010. 42\u201345"},{"key":"3993_CR2","doi-asserted-by":"publisher","first-page":"9490413","DOI":"10.34133\/2019\/9490413","volume":"2019","author":"F Zhou","year":"2019","unstructured":"Zhou F, Chen J, Tao X, et al. 2D materials based optoelectronic memory: convergence of electronic memory and optical sensor. Research, 2019, 2019: 9490413","journal-title":"Research"},{"key":"3993_CR3","doi-asserted-by":"publisher","first-page":"162401","DOI":"10.1007\/s11432-022-3591-5","volume":"66","author":"Y Wu","year":"2023","unstructured":"Wu Y, Deng W J, Chen X Q, et al. CMOS-compatible retinomorphic Si photodetector for motion detection. Sci China Inf Sci, 2023, 66: 162401","journal-title":"Sci China Inf Sci"},{"key":"3993_CR4","doi-asserted-by":"publisher","first-page":"7917","DOI":"10.1038\/s41467-022-35628-0","volume":"13","author":"Y Liu","year":"2022","unstructured":"Liu Y, Liu D, Gao C, et al. Self-powered high-sensitivity all-in-one vertical tribo-transistor device for multi-sensing-memory-computing. Nat Commun, 2022, 13: 7917","journal-title":"Nat Commun"},{"key":"3993_CR5","doi-asserted-by":"publisher","first-page":"50","DOI":"10.1021\/acs.chemrev.1c00497","volume":"122","author":"Y Zhao","year":"2022","unstructured":"Zhao Y, Gobbi M, Hueso L E, et al. Molecular approach to engineer two-dimensional devices for CMOS and beyond-CMOS applications. Chem Rev, 2022, 122: 50\u2013131","journal-title":"Chem Rev"},{"key":"3993_CR6","doi-asserted-by":"publisher","first-page":"e2206791","DOI":"10.1002\/smll.202206791","volume":"19","author":"Z Bian","year":"2023","unstructured":"Bian Z, Miao J, Zhang T, et al. Carrier modulation in 2D transistors by inserting interfacial dielectric layer for area-efficient computation. Small, 2023, 19: e2206791","journal-title":"Small"},{"key":"3993_CR7","doi-asserted-by":"publisher","first-page":"221402","DOI":"10.1007\/s11432-021-3327-7","volume":"64","author":"C D Cheng","year":"2021","unstructured":"Cheng C D, Tiw P J, Cai Y M, et al. In-memory computing with emerging nonvolatile memory devices. Sci China Inf Sci, 2021, 64: 221402","journal-title":"Sci China Inf Sci"},{"key":"3993_CR8","doi-asserted-by":"publisher","first-page":"142402","DOI":"10.1007\/s11432-021-3502-4","volume":"66","author":"H Z Yang","year":"2023","unstructured":"Yang H Z, Huang P, Han R Z, et al. An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash. Sci China Inf Sci, 2023, 66: 142402","journal-title":"Sci China Inf Sci"},{"key":"3993_CR9","doi-asserted-by":"publisher","first-page":"2002072","DOI":"10.1002\/advs.202002072","volume":"7","author":"X Hou","year":"2020","unstructured":"Hou X, Liu C, Ding Y, et al. A logic-memory transistor with the integration of visible information sensing-memory-processing. Adv Sci, 2020, 7: 2002072","journal-title":"Adv Sci"},{"key":"3993_CR10","doi-asserted-by":"publisher","first-page":"1497","DOI":"10.1021\/acsnano.0c08921","volume":"15","author":"Y X Hou","year":"2021","unstructured":"Hou Y X, Li Y, Zhang Z C, et al. Large-scale and flexible optical synapses for neuromorphic computing and integrated visible information sensing memory processing. ACS Nano, 2021, 15: 1497\u20131508","journal-title":"ACS Nano"},{"key":"3993_CR11","doi-asserted-by":"publisher","first-page":"1800080","DOI":"10.1002\/adfm.201800080","volume":"28","author":"F Zhou","year":"2018","unstructured":"Zhou F, Liu Y, Shen X, et al. Low-Voltage, optoelectronic CH3NH3PbI3\u2212xClx memory with integrated sensing and logic operations. Adv Funct Mater, 2018, 28: 1800080","journal-title":"Adv Funct Mater"},{"key":"3993_CR12","doi-asserted-by":"publisher","first-page":"106078","DOI":"10.1016\/j.nanoen.2021.106078","volume":"86","author":"Z Gao","year":"2021","unstructured":"Gao Z, Chen S, Li R, et al. An artificial olfactory system with sensing, memory and self-protection capabilities. Nano Energy, 2021, 86: 106078","journal-title":"Nano Energy"},{"key":"3993_CR13","doi-asserted-by":"publisher","first-page":"1499","DOI":"10.1038\/s41563-023-01676-0","volume":"22","author":"G Wu","year":"2023","unstructured":"Wu G, Zhang X, Feng G, et al. Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing. Nat Mater, 2023, 22: 1499\u20131506","journal-title":"Nat Mater"},{"key":"3993_CR14","doi-asserted-by":"publisher","first-page":"1516","DOI":"10.1126\/science.1179963","volume":"326","author":"T Sekitani","year":"2009","unstructured":"Sekitani T, Yokota T, Zschieschang U, et al. Organic nonvolatile memory transistors for flexible sensor arrays. Science, 2009, 326: 1516\u20131519","journal-title":"Science"},{"key":"3993_CR15","doi-asserted-by":"publisher","first-page":"587","DOI":"10.1002\/j.1538-7305.1970.tb01790.x","volume":"49","author":"W S Boyle","year":"1970","unstructured":"Boyle W S, Smith G E. Charge coupled semiconductor devices. Bell Syst Technical J, 1970, 49: 587\u2013593","journal-title":"Bell Syst Technical J"},{"key":"3993_CR16","doi-asserted-by":"publisher","first-page":"36","DOI":"10.1126\/science.3116667","volume":"238","author":"Y Hiraoka","year":"1987","unstructured":"Hiraoka Y, Sedat J W, Agard D A. The use of a charge-coupled device for quantitative optical microscopy of biological structures. Science, 1987, 238: 36\u201341","journal-title":"Science"},{"key":"3993_CR17","doi-asserted-by":"publisher","first-page":"560","DOI":"10.1038\/35069023","volume":"410","author":"A Fujiwara","year":"2001","unstructured":"Fujiwara A, Takahashi Y. Manipulation of elementary charge in a silicon charge-coupled device. Nature, 2001, 410: 560\u2013562","journal-title":"Nature"},{"key":"3993_CR18","doi-asserted-by":"publisher","first-page":"246","DOI":"10.3847\/1538-3881\/ab0412","volume":"157","author":"C Padilla","year":"2019","unstructured":"Padilla C, Castander F J, Alarc\u00f3n A, et al. The physics of the accelerating universe camera. Astron J, 2019, 157: 246","journal-title":"Astron J"},{"key":"3993_CR19","doi-asserted-by":"publisher","first-page":"991","DOI":"10.1038\/s41928-023-01064-1","volume":"6","author":"G M Marega","year":"2023","unstructured":"Marega G M, Ji H G, Wang Z, et al. A large-scale integrated vector-matrix multiplication processor based on monolayer molybdenum disulfide memories. Nat Electron, 2023, 6: 991\u2013998","journal-title":"Nat Electron"},{"key":"3993_CR20","doi-asserted-by":"publisher","first-page":"1703363","DOI":"10.1002\/adma.201703363","volume":"29","author":"Q A Vu","year":"2017","unstructured":"Vu Q A, Kim H, Nguyen V L, et al. A high-on\/off-ratio floating-gate memristor array on a flexible substrate via CVD-grown large-area 2D layer stacking. Adv Mater, 2017, 29: 1703363","journal-title":"Adv Mater"},{"key":"3993_CR21","doi-asserted-by":"publisher","first-page":"72","DOI":"10.1038\/s41586-020-2861-0","volume":"587","author":"G M Marega","year":"2020","unstructured":"Marega G M, Zhao Y, Avsar A, et al. Logic-in-memory based on an atomically thin semiconductor. Nature, 2020, 587: 72\u201377","journal-title":"Nature"},{"key":"3993_CR22","doi-asserted-by":"publisher","first-page":"2004907","DOI":"10.1002\/smll.202004907","volume":"16","author":"T Sasaki","year":"2020","unstructured":"Sasaki T, Ueno K, Taniguchi T, et al. Understanding the memory window overestimation of 2D materials based floating gate type memory devices by measuring floating gate voltage. Small, 2020, 16: 2004907","journal-title":"Small"},{"key":"3993_CR23","doi-asserted-by":"publisher","first-page":"1604230","DOI":"10.1002\/adma.201604230","volume":"29","author":"Y Zhao","year":"2017","unstructured":"Zhao Y, Qiao J, Yu Z, et al. High-electron-mobility and air-stable 2D layered PtSe2 FETs. Adv Mater, 2017, 29: 1604230","journal-title":"Adv Mater"},{"key":"3993_CR24","doi-asserted-by":"publisher","first-page":"1220","DOI":"10.1021\/accountsmr.2c00146","volume":"3","author":"Z Bian","year":"2022","unstructured":"Bian Z, Miao J, Zhao Y, et al. Strong interlayer interaction for engineering two-dimensional materials. Acc Mater Res, 2022, 3: 1220\u20131231","journal-title":"Acc Mater Res"},{"key":"3993_CR25","doi-asserted-by":"publisher","first-page":"20647","DOI":"10.1021\/acsnano.2c07670","volume":"16","author":"J Miao","year":"2022","unstructured":"Miao J, Wu L, Bian Z, et al. A \u201cClick\u201d reaction to engineer MoS2 field-effect transistors with low contact resistance. ACS Nano, 2022, 16: 20647\u201320655","journal-title":"ACS Nano"},{"key":"3993_CR26","doi-asserted-by":"publisher","first-page":"419","DOI":"10.1038\/nature12385","volume":"499","author":"A K Geim","year":"2013","unstructured":"Geim A K, Grigorieva I V. Van der Waals heterostructures. Nature, 2013, 499: 419\u2013425","journal-title":"Nature"},{"key":"3993_CR27","doi-asserted-by":"publisher","first-page":"545","DOI":"10.1038\/s41565-020-0724-3","volume":"15","author":"C Liu","year":"2020","unstructured":"Liu C, Chen H, Wang S, et al. Two-dimensional materials for next-generation computing technologies. Nat Nanotechnol, 2020, 15: 545\u2013557","journal-title":"Nat Nanotechnol"},{"key":"3993_CR28","doi-asserted-by":"publisher","first-page":"1225","DOI":"10.1038\/s41563-022-01383-2","volume":"21","author":"S Wang","year":"2022","unstructured":"Wang S, Liu X, Xu M, et al. Two-dimensional devices and integration towards the silicon lines. Nat Mater, 2022, 21: 1225\u20131239","journal-title":"Nat Mater"},{"key":"3993_CR29","doi-asserted-by":"publisher","first-page":"323","DOI":"10.1038\/s41586-019-1013-x","volume":"567","author":"Y Liu","year":"2019","unstructured":"Liu Y, Huang Y, Duan X. Van der Waals integration before and beyond two-dimensional materials. Nature, 2019, 567: 323\u2013333","journal-title":"Nature"},{"key":"3993_CR30","doi-asserted-by":"publisher","first-page":"43","DOI":"10.1038\/s41586-021-03339-z","volume":"591","author":"Y Liu","year":"2021","unstructured":"Liu Y, Duan X, Shin H J, et al. Promises and prospects of two-dimensional transistors. Nature, 2021, 591: 43\u201353","journal-title":"Nature"},{"key":"3993_CR31","doi-asserted-by":"publisher","first-page":"160411","DOI":"10.1007\/s11432-023-3752-3","volume":"66","author":"H K Ning","year":"2023","unstructured":"Ning H K, Yu Z H, Li T T, et al. From lab to fab: path forward for 2D material electronics. Sci China Inf Sci, 2023, 66: 160411","journal-title":"Sci China Inf Sci"},{"key":"3993_CR32","doi-asserted-by":"publisher","first-page":"882","DOI":"10.1038\/s41565-021-00904-5","volume":"16","author":"L Wu","year":"2021","unstructured":"Wu L, Wang A, Shi J, et al. Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices. Nat Nanotechnol, 2021, 16: 882\u2013887","journal-title":"Nat Nanotechnol"},{"key":"3993_CR33","doi-asserted-by":"publisher","first-page":"208","DOI":"10.1002\/smll.201401872","volume":"11","author":"J Wang","year":"2015","unstructured":"Wang J, Zou X, Xiao X, et al. Floating gate memory-based monolayer MoS2 transistor with metal nanocrystals embedded in the gate dielectrics. Small, 2015, 11: 208\u2013213","journal-title":"Small"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-024-3993-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-024-3993-5\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-024-3993-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,9,5]],"date-time":"2025-09-05T19:07:05Z","timestamp":1757099225000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-024-3993-5"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,4,26]]},"references-count":33,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2024,6]]}},"alternative-id":["3993"],"URL":"https:\/\/doi.org\/10.1007\/s11432-024-3993-5","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"type":"print","value":"1674-733X"},{"type":"electronic","value":"1869-1919"}],"subject":[],"published":{"date-parts":[[2024,4,26]]},"assertion":[{"value":"2 February 2024","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"20 March 2024","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"28 March 2024","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"26 April 2024","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"160404"}}