{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,20]],"date-time":"2026-05-20T21:15:34Z","timestamp":1779311734983,"version":"3.51.4"},"reference-count":65,"publisher":"Springer Science and Business Media LLC","issue":"4","license":[{"start":{"date-parts":[[2025,2,26]],"date-time":"2025-02-26T00:00:00Z","timestamp":1740528000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2025,2,26]],"date-time":"2025-02-26T00:00:00Z","timestamp":1740528000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2025,4]]},"DOI":"10.1007\/s11432-024-4046-x","type":"journal-article","created":{"date-parts":[[2025,3,3]],"date-time":"2025-03-03T09:53:20Z","timestamp":1740995600000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["High-temperature optoelectronic synaptic devices based on 4H-SiC"],"prefix":"10.1007","volume":"68","author":[{"given":"Mingxuan","family":"Bu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yue","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhenyi","family":"Ni","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Dongke","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Deren","family":"Yang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaodong","family":"Pi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2025,2,26]]},"reference":[{"key":"4046_CR1","doi-asserted-by":"publisher","first-page":"032065","DOI":"10.1088\/1742-6596\/2083\/3\/032065","volume":"2083","author":"Q Wang","year":"2021","unstructured":"Wang Q, Mi N, Yi Z N, et al. Access data analysis technology and implementation of electric power big data achievement sharing platform through artificial intelligence. J Phys-Conf Ser, 2021, 2083: 032065","journal-title":"J Phys-Conf Ser"},{"key":"4046_CR2","doi-asserted-by":"publisher","first-page":"8114","DOI":"10.3390\/app10228114","volume":"10","author":"Y C Hu","year":"2020","unstructured":"Hu Y C, Lin Y H, Lin C H. Artificial intelligence, accelerated in parallel computing and applied to nonintrusive appliance load monitoring for residential demand-side management in a smart grid: a comparative study. Appl Sci, 2020, 10: 8114","journal-title":"Appl Sci"},{"key":"4046_CR3","doi-asserted-by":"publisher","first-page":"051201","DOI":"10.1088\/1674-4926\/43\/5\/051201","volume":"43","author":"W Wen","year":"2022","unstructured":"Wen W, Guo Y L, Liu Y Q. Multifunctional neurosynaptic devices for human perception systems. J Semicond, 2022, 43: 051201","journal-title":"J Semicond"},{"key":"4046_CR4","doi-asserted-by":"publisher","first-page":"335","DOI":"10.1145\/2903150.2903486","volume-title":"Proceedings of the ACM International Conference on Computing Frontiers","author":"M Brodowicz","year":"2016","unstructured":"Brodowicz M, Sterling T. A non von Neumann continuum computer architecture for scalability beyond Moore\u2019s law. In: Proceedings of the ACM International Conference on Computing Frontiers, 2016. 335\u2013338"},{"key":"4046_CR5","doi-asserted-by":"publisher","first-page":"107","DOI":"10.1038\/s41524-022-00773-z","volume":"8","author":"P H Mo","year":"2022","unstructured":"Mo P H, Li C, Zhao D, et al. Accurate and efficient molecular dynamics based on machine learning and non von Neumann architecture. npj Comput Mater, 2022, 8: 107","journal-title":"npj Comput Mater"},{"key":"4046_CR6","first-page":"199","volume-title":"Proceedings of the 7th International Conference on Cloud Computing, Data Science & Engineering-Confluence, Noida","author":"M Shaafiee","year":"2017","unstructured":"Shaafiee M, Logeswaran R, Seddon A. Overcoming the limitations of von Neumann architecture in big data systems. In: Proceedings of the 7th International Conference on Cloud Computing, Data Science & Engineering-Confluence, Noida, 2017. 199\u2013203"},{"key":"4046_CR7","doi-asserted-by":"publisher","first-page":"200402","DOI":"10.1007\/s11432-023-3789-7","volume":"66","author":"L C He","year":"2023","unstructured":"He L C, Li X, Xie C C, et al. In-memory computing based on phase change memory for high energy efficiency. Sci China Inf Sci, 2023, 66: 200402","journal-title":"Sci China Inf Sci"},{"key":"4046_CR8","doi-asserted-by":"publisher","first-page":"6703","DOI":"10.1109\/JIOT.2021.3133653","volume":"10","author":"J Wu","year":"2023","unstructured":"Wu J, Zhou P, Chen Q M, et al. Blockchain-based privacy-aware contextual online learning for collaborative edge-cloud-enabled nursing system in Internet of Things. IEEE Internet Things J, 2023, 10: 6703\u20136717","journal-title":"IEEE Internet Things J"},{"key":"4046_CR9","doi-asserted-by":"publisher","first-page":"154","DOI":"10.1109\/TPAMI.2020.3008413","volume":"44","author":"G Gallego","year":"2022","unstructured":"Gallego G, Delbruck T, Orchard G, et al. Event-based vision: a survey. IEEE Trans Pattern Anal Mach Intell, 2022, 44: 154\u2013180","journal-title":"IEEE Trans Pattern Anal Mach Intell"},{"key":"4046_CR10","doi-asserted-by":"publisher","first-page":"e12831","DOI":"10.1111\/exsy.12831","volume":"39","author":"M S Akhoon","year":"2022","unstructured":"Akhoon M S, Suandi S A, Alshahrani A, et al. High performance accelerators for deep neural networks: a review. Expert Syst, 2022, 39: e12831","journal-title":"Expert Syst"},{"key":"4046_CR11","doi-asserted-by":"publisher","first-page":"575","DOI":"10.1038\/s41578-022-00434-z","volume":"7","author":"S Kumar","year":"2022","unstructured":"Kumar S, Wang X, Strachan J P, et al. Dynamical memristors for higher-complexity neuromorphic computing. Nat Rev Mater, 2022, 7: 575\u2013591","journal-title":"Nat Rev Mater"},{"key":"4046_CR12","doi-asserted-by":"publisher","first-page":"671","DOI":"10.1038\/s42254-021-00358-7","volume":"3","author":"D Markovi\u0107","year":"2021","unstructured":"Markovi\u0107 D, Mizrahi A, Querlioz D, et al. Author correction: physics for neuromorphic computing. Nat Rev Phys, 2021, 3: 671","journal-title":"Nat Rev Phys"},{"key":"4046_CR13","doi-asserted-by":"publisher","first-page":"102","DOI":"10.1038\/s41566-020-00754-y","volume":"15","author":"B J Shastri","year":"2021","unstructured":"Shastri B J, Tait A N, de Lima T F, et al. Photonics for artificial intelligence and neuromorphic computing. Nat Photonics, 2021, 15: 102\u2013114","journal-title":"Nat Photonics"},{"key":"4046_CR14","doi-asserted-by":"publisher","first-page":"2204904","DOI":"10.1002\/adma.202204904","volume":"35","author":"J Y Park","year":"2023","unstructured":"Park J Y, Choe D H, Lee D H, et al. Revival of ferroelectric memories based on emerging fluorite-structured ferroelectrics. Adv Mater, 2023, 35: 2204904","journal-title":"Adv Mater"},{"key":"4046_CR15","doi-asserted-by":"publisher","first-page":"2000099","DOI":"10.1002\/aisy.202000099","volume":"3","author":"Y Wang","year":"2021","unstructured":"Wang Y, Yin L, Huang W, et al. Optoelectronic synaptic devices for neuromorphic computing. Adv Intell Syst, 2021, 3: 2000099","journal-title":"Adv Intell Syst"},{"key":"4046_CR16","doi-asserted-by":"publisher","first-page":"2206042","DOI":"10.1002\/adma.202206042","volume":"35","author":"T Mikolajick","year":"2023","unstructured":"Mikolajick T, Park M H, Begon-Lours L, et al. From ferroelectric material optimization to neuromorphic devices. Adv Mater, 2023, 35: 2206042","journal-title":"Adv Mater"},{"key":"4046_CR17","doi-asserted-by":"publisher","first-page":"406","DOI":"10.1109\/LED.2022.3142257","volume":"43","author":"W Du","year":"2022","unstructured":"Du W, Li C H, Huang Y X, et al. An optoelectronic reservoir computing for temporal information processing. IEEE Electron Device Lett, 2022, 43: 406\u2013409","journal-title":"IEEE Electron Device Lett"},{"key":"4046_CR18","doi-asserted-by":"publisher","first-page":"2100042","DOI":"10.1002\/adfm.202100042","volume":"31","author":"Y Li","year":"2021","unstructured":"Li Y, Xuan Z, Lu J, et al. One transistor one electrolyte-gated transistor based spiking neural network for power-efficient neuromorphic computing system. Adv Funct Mater, 2021, 31: 2100042","journal-title":"Adv Funct Mater"},{"key":"4046_CR19","doi-asserted-by":"publisher","first-page":"e1154","DOI":"10.1002\/smm2.1154","volume":"4","author":"Y Ni","year":"2023","unstructured":"Ni Y, Yang L, Feng J, et al. Flexible optoelectronic neural transistors with broadband spectrum sensing and instant electrical processing for multimodal neuromorphic computing. SmartMat, 2023, 4: e1154","journal-title":"SmartMat"},{"key":"4046_CR20","doi-asserted-by":"publisher","first-page":"2202105","DOI":"10.1002\/adom.202202105","volume":"11","author":"C H Kai","year":"2023","unstructured":"Kai C H, Wang Y, Liu X, et al. AlGaN\/GaN-based optoelectronic synaptic devices for neuromorphic computing. Adv Opt Mater, 2023, 11: 2202105","journal-title":"Adv Opt Mater"},{"key":"4046_CR21","doi-asserted-by":"publisher","first-page":"7661","DOI":"10.1007\/s12274-023-5456-x","volume":"16","author":"G X Chen","year":"2023","unstructured":"Chen G X, Yu X P, Gao C S, et al. Temperature-controlled multisensory neuromorphic devices for artificial visual dynamic capture enhancement. Nano Res, 2023, 16: 7661\u20137670","journal-title":"Nano Res"},{"key":"4046_CR22","doi-asserted-by":"publisher","first-page":"1594","DOI":"10.1109\/5.704265","volume":"86","author":"M Mehregany","year":"1998","unstructured":"Mehregany M, Zorman C A, Rajan N, et al. Silicon carbide MEMS for harsh environments. Proc IEEE, 1998, 86: 1594\u20131609","journal-title":"Proc IEEE"},{"key":"4046_CR23","doi-asserted-by":"publisher","first-page":"249","DOI":"10.1109\/41.915402","volume":"48","author":"M R Werner","year":"2001","unstructured":"Werner M R, Fahrner W R. Review on materials, microsensors, systems and devices for high-temperature and harsh-environment applications. IEEE Trans Ind Electron, 2001, 48: 249\u2013257","journal-title":"IEEE Trans Ind Electron"},{"key":"4046_CR24","doi-asserted-by":"publisher","first-page":"182405","DOI":"10.1007\/s11432-022-3694-4","volume":"66","author":"H C Zhang","year":"2023","unstructured":"Zhang H C, Sun Y, Hu K P, et al. Boosted high-temperature electrical characteristics of AlGaN\/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers. Sci China Inf Sci, 2023, 66: 182405","journal-title":"Sci China Inf Sci"},{"key":"4046_CR25","doi-asserted-by":"publisher","first-page":"25984","DOI":"10.1021\/acsami.2c02803","volume":"14","author":"Z J Lu","year":"2022","unstructured":"Lu Z J, Zhu M J, Liu Y F, et al. Low-temperature synthesis of boron nitride as a large-scale passivation and protection layer for two-dimensional materials and high-performance devices. ACS Appl Mater Inter, 2022, 14: 25984\u201325992","journal-title":"ACS Appl Mater Inter"},{"key":"4046_CR26","doi-asserted-by":"publisher","first-page":"092003","DOI":"10.1088\/2053-1591\/ab1aea","volume":"6","author":"Y Mussa","year":"2019","unstructured":"Mussa Y, Fathima A, Arsalan M, et al. The use of two-dimensional materials in high-temperature rechargeable batteries: current issues and preventative measures. Mater Res Express, 2019, 6: 092003","journal-title":"Mater Res Express"},{"key":"4046_CR27","doi-asserted-by":"publisher","first-page":"4271","DOI":"10.1039\/D1NR06971C","volume":"14","author":"W Shangguan","year":"2022","unstructured":"Shangguan W, Yan C X, Li W Q, et al. Two-dimensional semiconductor materials with high stability and electron mobility in group-11 chalcogenide compounds: MNX (M = Cu, Ag, Au; N = Cu, Ag, Au; X = S, Se, Te; M \u2260 N). Nanoscale, 2022, 14: 4271\u20134280","journal-title":"Nanoscale"},{"key":"4046_CR28","doi-asserted-by":"publisher","first-page":"8235","DOI":"10.1039\/D1NR00139F","volume":"13","author":"F Zhou","year":"2021","unstructured":"Zhou F, Liu Y, Kuang M, et al. Time-reversal-breaking Weyl nodal lines in two-dimensional A3C2 (A = Ti, Zr, and Hf) intrinsically ferromagnetic materials with high Curie temperature. Nanoscale, 2021, 13: 8235\u20138241","journal-title":"Nanoscale"},{"key":"4046_CR29","doi-asserted-by":"publisher","first-page":"162401","DOI":"10.1007\/s11432-020-3035-8","volume":"64","author":"Y Y Li","year":"2021","unstructured":"Li Y Y, Wang Y, Yin L, et al. Silicon-based inorganic-organic hybrid optoelectronic synaptic devices simulating cross-modal learning. Sci China Inf Sci, 2021, 64: 162401","journal-title":"Sci China Inf Sci"},{"key":"4046_CR30","doi-asserted-by":"publisher","first-page":"8460","DOI":"10.1021\/acs.nanolett.3c01853","volume":"23","author":"Y Wang","year":"2023","unstructured":"Wang Y, Yin L, Huang S J, et al. Silicon-nanomembrane-based broadband synaptic phototransistors for neuromorphic vision. Nano Lett, 2023, 23: 8460\u20138467","journal-title":"Nano Lett"},{"key":"4046_CR31","doi-asserted-by":"publisher","first-page":"nwac104","DOI":"10.1093\/nsr\/nwac104","volume":"9","author":"Z Chen","year":"2022","unstructured":"Chen Z, Li J F, Li T Z, et al. A CRISPR\/Cas12a-empowered surface plasmon resonance platform for rapid and specific diagnosis of the Omicron variant of SARS-CoV-2. Natl Sci Rev, 2022, 9: nwac104","journal-title":"Natl Sci Rev"},{"key":"4046_CR32","doi-asserted-by":"publisher","first-page":"e2105231","DOI":"10.1002\/advs.202105231","volume":"9","author":"F Zheng","year":"2022","unstructured":"Zheng F, Chen Z, Li J F, et al. A highly sensitive CRISPR-empowered surface plasmon resonance sensor for diagnosis of inherited diseases with femtomolar-level real-time quantification. Adv Sci, 2022, 9: e2105231","journal-title":"Adv Sci"},{"key":"4046_CR33","doi-asserted-by":"publisher","first-page":"142404","DOI":"10.1007\/s11432-022-3549-7","volume":"66","author":"Y Y Cui","year":"2023","unstructured":"Cui Y Y, Tong Z Y, Zhang X L, et al. Mid-infrared plasmonic silicon quantum dot\/HgCdTe photodetector with ultrahigh specific detectivity. Sci China Inf Sci, 2023, 66: 142404","journal-title":"Sci China Inf Sci"},{"key":"4046_CR34","doi-asserted-by":"publisher","first-page":"159403","DOI":"10.1007\/s11432-023-3991-9","volume":"67","author":"W Huang","year":"2024","unstructured":"Huang W, Xia X W, Zhang H X, et al. High-performance carbon-electrode-based self-powered optoelectronic synaptic devices. Sci China Inf Sci, 2024, 67: 159403","journal-title":"Sci China Inf Sci"},{"key":"4046_CR35","doi-asserted-by":"publisher","first-page":"2200975","DOI":"10.1002\/aelm.202200975","volume":"9","author":"D Rao","year":"2023","unstructured":"Rao D, Pillai A I K, Garbrecht M, et al. Scandium nitride as a gateway III-nitride semiconductor for both excitatory and inhibitory optoelectronic artificial synaptic devices. Adv Elect Mater, 2023, 9: 2200975","journal-title":"Adv Elect Mater"},{"key":"4046_CR36","doi-asserted-by":"publisher","first-page":"2310155","DOI":"10.1002\/adma.202310155","volume":"36","author":"Z Y Guo","year":"2024","unstructured":"Guo Z Y, Zhang J Y, Yang B, et al. Organic high-temperature synaptic phototransistors for energy-efficient neuromorphic computing. Adv Mater, 2024, 36: 2310155","journal-title":"Adv Mater"},{"key":"4046_CR37","doi-asserted-by":"publisher","first-page":"145201","DOI":"10.1088\/1361-6528\/acb217","volume":"34","author":"J S Zhao","year":"2023","unstructured":"Zhao J S, Zheng S T, Zhou L W, et al. An artificial optoelectronic synapse based on MoOx film. Nanotechnology, 2023, 34: 145201","journal-title":"Nanotechnology"},{"key":"4046_CR38","doi-asserted-by":"publisher","first-page":"189","DOI":"10.1002\/9781118313534","volume-title":"Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications","author":"T Kimoto","year":"2014","unstructured":"Kimoto T, Cooper J A. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications. Newark: Wiley, 2014. 189\u2013276"},{"key":"4046_CR39","first-page":"8984917","volume-title":"Proceedings of IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou","author":"C L Hung","year":"2019","unstructured":"Hung C L, Cheng J C, Tsui B Y. Failure analysis on TiAl metallization process for ohmic contact on 4H-SiC pMOSFET. In: Proceedings of IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, 2019. 8984917"},{"key":"4046_CR40","first-page":"1","volume-title":"Proceedings of International Workshop on Advanced Patterning Solutions (IWAPS), Foshan","author":"Z M Wang","year":"2021","unstructured":"Wang Z M, Liu L. Simulation research of 4H-SiC double-trench MOSFET with high-k gate dielectric materials. In: Proceedings of International Workshop on Advanced Patterning Solutions (IWAPS), Foshan, 2021. 1\u20134"},{"key":"4046_CR41","doi-asserted-by":"publisher","first-page":"6403","DOI":"10.1007\/s11664-017-5675-6","volume":"46","author":"A Sciuto","year":"2017","unstructured":"Sciuto A, Torrisi L, Cannavo A, et al. Advantages and limits of 4H-SiC detectors for high- and low-flux radiations. J Elec Materi, 2017, 46: 6403\u20136410","journal-title":"J Elec Materi"},{"key":"4046_CR42","doi-asserted-by":"publisher","first-page":"384","DOI":"10.1109\/TSM.2016.2599839","volume":"29","author":"D J Meyer","year":"2016","unstructured":"Meyer D J, Downey B P, Katzer D S, et al. Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates. IEEE Trans Semicond Manufact, 2016, 29: 384\u2013389","journal-title":"IEEE Trans Semicond Manufact"},{"key":"4046_CR43","doi-asserted-by":"publisher","first-page":"2202369","DOI":"10.1002\/admi.202202369","volume":"10","author":"W T Wang","year":"2023","unstructured":"Wang W T, Lu X S, Wu X K, et al. Chemical-mechanical polishing of 4H silicon carbide wafers. Adv Mater Inter, 2023, 10: 2202369","journal-title":"Adv Mater Inter"},{"key":"4046_CR44","doi-asserted-by":"publisher","first-page":"102801","DOI":"10.1088\/1674-4926\/43\/10\/102801","volume":"43","author":"W H Geng","year":"2022","unstructured":"Geng W H, Yang G, Zhang X Q, et al. Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching. J Semicond, 2022, 43: 102801","journal-title":"J Semicond"},{"key":"4046_CR45","doi-asserted-by":"publisher","first-page":"367","DOI":"10.1021\/acsaelm.2c01390","volume":"5","author":"X Liu","year":"2023","unstructured":"Liu X, Huang W, Kai C H, et al. Photogated synaptic transistors based on the heterostructure of 4H-SiC and organic semiconductors for neuromorphic ultraviolet vision. ACS Appl Electron Mater, 2023, 5: 367\u2013374","journal-title":"ACS Appl Electron Mater"},{"key":"4046_CR46","doi-asserted-by":"publisher","first-page":"213","DOI":"10.3390\/mi10030213","volume":"10","author":"J H Seo","year":"2019","unstructured":"Seo J H. Editorial for the special issue on wide bandgap semiconductor based micro\/nano devices. Micromachines, 2019, 10: 213","journal-title":"Micromachines"},{"key":"4046_CR47","doi-asserted-by":"publisher","first-page":"269","DOI":"10.4028\/www.scientific.net\/MSF.778-780.269","volume":"778\u2013780","author":"G Alfieri","year":"2014","unstructured":"Alfieri G, Kimoto T. Minority carrier transient spectroscopy of as-grown, electron irradiated and thermally oxidized p-type 4H-SiC. Mater Sci Forum, 2014, 778\u2013780: 269\u2013272","journal-title":"Mater Sci Forum"},{"key":"4046_CR48","doi-asserted-by":"publisher","first-page":"651","DOI":"10.4028\/www.scientific.net\/MSF.645-648.651","volume":"645\u2013648","author":"K Kawahara","year":"2010","unstructured":"Kawahara K, Alfieri G, Hiyoshi T, et al. Effects of thermal oxidation on deep levels generated by ion implantation into n-type and p-type 4H-SiC. Mater Sci Forum, 2010, 645\u2013648: 651\u2013654","journal-title":"Mater Sci Forum"},{"key":"4046_CR49","doi-asserted-by":"publisher","first-page":"423","DOI":"10.4028\/www.scientific.net\/MSF.645-648.423","volume":"645\u2013648","author":"S A Reshanov","year":"2010","unstructured":"Reshanov S A, Beljakowa S, Zippelius B, et al. Thermal stability of defect centers in n- and p-type 4H-SiC epilayers generated by irradiation with high-energy electrons. Mater Sci Forum, 2010, 645\u2013648: 423\u2013426","journal-title":"Mater Sci Forum"},{"key":"4046_CR50","doi-asserted-by":"publisher","first-page":"422","DOI":"10.1016\/j.nanoen.2018.08.018","volume":"52","author":"H Tan","year":"2018","unstructured":"Tan H, Ni Z Y, Peng W B, et al. Broadband optoelectronic synaptic devices based on silicon nanocrystals for neuromorphic computing. Nano Energy, 2018, 52: 422\u2013430","journal-title":"Nano Energy"},{"key":"4046_CR51","doi-asserted-by":"publisher","first-page":"244505","DOI":"10.1063\/1.4955042","volume":"119","author":"H K Li","year":"2016","unstructured":"Li H K, Chen T P, Liu P, et al. A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx-AbO3 thin film structure. J Appl Phys, 2016, 119: 244505","journal-title":"J Appl Phys"},{"key":"4046_CR52","doi-asserted-by":"publisher","first-page":"48","DOI":"10.1038\/s41427-023-00495-8","volume":"15","author":"K Kim","year":"2023","unstructured":"Kim K, Lim J G, Hu S M, et al. Multifilamentary switching of Cu\/SiOx memristive devices with a Ge-implanted a-Si underlayer for analog synaptic devices. NPG Asia Mater, 2023, 15: 48","journal-title":"NPG Asia Mater"},{"key":"4046_CR53","doi-asserted-by":"publisher","first-page":"2300437","DOI":"10.1002\/aelm.202300437","volume":"9","author":"T S Kim","year":"2023","unstructured":"Kim T S, Jeon S H, Ko K, et al. Fast, Energy-efficient InGaAs synaptic phototransistors on flexible substrate. Adv Elect Mater, 2023, 9: 2300437","journal-title":"Adv Elect Mater"},{"key":"4046_CR54","doi-asserted-by":"publisher","first-page":"2201276","DOI":"10.1002\/adfm.202201276","volume":"32","author":"P X Lei","year":"2022","unstructured":"Lei P X, Duan H, Qin L, et al. High-performance memristor based on 2D layered BiOI nanosheet for low-power artificial optoelectronic synapses. Adv Funct Mater, 2022, 32: 2201276","journal-title":"Adv Funct Mater"},{"key":"4046_CR55","doi-asserted-by":"publisher","first-page":"672","DOI":"10.1016\/S0921-4526(99)00601-8","volume":"273\u2013274","author":"D Aberg","year":"1999","unstructured":"Aberg D, Hall\u00e9n A, Svensson B G. Low-dose ion implanted epitaxial 4H-SiC investigated by deep level transient spectroscopy. Physica B-Condensed Matter, 1999, 273\u2013274: 672\u2013676","journal-title":"Physica B-Condensed Matter"},{"key":"4046_CR56","doi-asserted-by":"publisher","first-page":"254","DOI":"10.3390\/mi11030254","volume":"11","author":"K C Mandal","year":"2020","unstructured":"Mandal K C, Kleppinger J W, Chaudhuri S K. Advances in high-resolution radiation detection using 4H-SiC epitaxial layer devices. Micromachines, 2020, 11: 254","journal-title":"Micromachines"},{"key":"4046_CR57","first-page":"157","volume-title":"Proceedings of IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), Kobe","author":"J B Wang","year":"2018","unstructured":"Wang J B, Li Y X, Zhang Y, et al. A two-terminal electric-double-layer synaptic device with short-term plasticity. In: Proceedings of IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), Kobe, 2018. 157\u2013159"},{"key":"4046_CR58","doi-asserted-by":"publisher","first-page":"917","DOI":"10.1109\/TED.2018.2888871","volume":"66","author":"Y T Seo","year":"2019","unstructured":"Seo Y T, Lee M S, Kim C H, et al. Si-based FET-type synaptic device with short-term and long-term plasticity using high-k gate-stack. IEEE Trans Electron Dev, 2019, 66: 917\u2013923","journal-title":"IEEE Trans Electron Dev"},{"key":"4046_CR59","doi-asserted-by":"publisher","first-page":"4681","DOI":"10.1113\/jphysiol.2013.258590","volume":"591","author":"P Isope","year":"2013","unstructured":"Isope P. Short-term synaptic plasticity and the \u2018active calcium\u2019 hypothesis at a central synapse. J Physiol, 2013, 591: 4681\u20134682","journal-title":"J Physiol"},{"key":"4046_CR60","doi-asserted-by":"publisher","first-page":"317","DOI":"10.1007\/s002210050901","volume":"129","author":"F Awiszus","year":"1999","unstructured":"Awiszus F, Feistner H, Urbach D, et al. Characterisation of paired-pulse transcranial magnetic stimulation conditions yielding intracortical inhibition or I-wave facilitation using a threshold-hunting paradigm. Exp Brain Res, 1999, 129: 317\u2013324","journal-title":"Exp Brain Res"},{"key":"4046_CR61","doi-asserted-by":"publisher","first-page":"2261","DOI":"10.1523\/JNEUROSCI.5582-06.2007","volume":"27","author":"M M\u00fcller","year":"2007","unstructured":"M\u00fcller M, Felmy F, Schwaller B, et al. Parvalbumin is a mobile presynaptic Ca2+ buffer in the calyx of held that accelerates the decay of Ca2+ and short-term facilitation. J Neurosci, 2007, 27: 2261\u20132271","journal-title":"J Neurosci"},{"key":"4046_CR62","doi-asserted-by":"publisher","first-page":"2202194","DOI":"10.1002\/admt.202202194","volume":"8","author":"M M H Tanim","year":"2023","unstructured":"Tanim M M H, Templin Z, Hood K, et al. A natural organic artificial synaptic device made from a honey and carbon nanotube admixture for neuromorphic computing. Adv Mater Technol, 2023, 8: 2202194","journal-title":"Adv Mater Technol"},{"key":"4046_CR63","doi-asserted-by":"publisher","first-page":"2300136","DOI":"10.1002\/aisy.202300136","volume":"5","author":"B Walters","year":"2023","unstructured":"Walters B, Jacob M V, Amirsoleimani A, et al. A review of graphene-based memristive neuromorphic devices and circuits. Adv Intell Syst, 2023, 5: 2300136","journal-title":"Adv Intell Syst"},{"key":"4046_CR64","doi-asserted-by":"publisher","first-page":"3158","DOI":"10.1038\/ncomms4158","volume":"5","author":"L Q Zhu","year":"2014","unstructured":"Zhu L Q, Wan C J, Guo L Q, et al. Artificial synapse network on inorganic proton conductor for neuromorphic systems. Nat Commun, 2014, 5: 3158","journal-title":"Nat Commun"},{"key":"4046_CR65","doi-asserted-by":"publisher","first-page":"835","DOI":"10.1103\/PhysRev.87.835","volume":"87","author":"W Shockley","year":"1952","unstructured":"Shockley W, Read W T. Statistics of the recombinations of holes and electrons. Phys Rev, 1952, 87: 835\u2013842","journal-title":"Phys Rev"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-024-4046-x.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-024-4046-x","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-024-4046-x.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,5,20]],"date-time":"2026-05-20T21:03:28Z","timestamp":1779311008000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-024-4046-x"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,2,26]]},"references-count":65,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2025,4]]}},"alternative-id":["4046"],"URL":"https:\/\/doi.org\/10.1007\/s11432-024-4046-x","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,2,26]]},"assertion":[{"value":"6 April 2024","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"25 April 2024","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"22 May 2024","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"26 February 2025","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"140402"}}