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Sci."],"published-print":{"date-parts":[[2025,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    In this paper, we design and fabricate a Schottky-metal-insulator-semiconductor (MIS) cascode anode GaN lateral field-effect diode (CA-LFED) to achieve ultralow reverse leakage current (\n                    <jats:italic>I<\/jats:italic>\n                    <jats:sub>LEAK<\/jats:sub>\n                    ). The device based on AlGaN\/GaN high-electron-mobility-transistor (HEMT) includes a normally-off MIS-controlled channel that is cascoded with a high barrier height Schottky contact. At reverse bias, the high electric-field is effectively prevented by the normally-off MIS-controlled channel edge. Together with the high barrier height Schottky contact, this feature significantly suppresses the\n                    <jats:italic>I<\/jats:italic>\n                    <jats:sub>LEAK<\/jats:sub>\n                    . Supported by the device fabrication, the CA-LFED with high breakdown voltage (BV) &gt; 600 V shows an ultralow\n                    <jats:italic>I<\/jats:italic>\n                    <jats:sub>LEAK<\/jats:sub>\n                    of 3.6 \u00d7 10\n                    <jats:sup>\u22129<\/jats:sup>\n                    A\/mm as well as a low forward voltage drop (\n                    <jats:italic>V<\/jats:italic>\n                    <jats:sub>F<\/jats:sub>\n                    ) of 2.2 V. The performance suggests that the CA-LFED can be a promising candidate for ultralow\n                    <jats:italic>I<\/jats:italic>\n                    <jats:sub>LEAK<\/jats:sub>\n                    and better\n                    <jats:italic>V<\/jats:italic>\n                    <jats:sub>F<\/jats:sub>\n                    -\n                    <jats:italic>I<\/jats:italic>\n                    <jats:sub>LEAK<\/jats:sub>\n                    trade-off GaN power diode applications.\n                  <\/jats:p>","DOI":"10.1007\/s11432-024-4197-y","type":"journal-article","created":{"date-parts":[[2024,12,20]],"date-time":"2024-12-20T07:28:24Z","timestamp":1734679704000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN\/GaN HEMT"],"prefix":"10.1007","volume":"68","author":[{"given":"Fangzhou","family":"Wang","sequence":"first","affiliation":[]},{"given":"Changhong","family":"Gao","sequence":"additional","affiliation":[]},{"given":"Guojian","family":"Ding","sequence":"additional","affiliation":[]},{"given":"Cheng","family":"Yu","sequence":"additional","affiliation":[]},{"given":"Zhuocheng","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Xiaohui","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Qi","family":"Feng","sequence":"additional","affiliation":[]},{"given":"Ping","family":"Yu","sequence":"additional","affiliation":[]},{"given":"Peng","family":"Zuo","sequence":"additional","affiliation":[]},{"given":"Wanjun","family":"Chen","sequence":"additional","affiliation":[]},{"given":"Yang","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Haiqiang","family":"Jia","sequence":"additional","affiliation":[]},{"given":"Hong","family":"Chen","sequence":"additional","affiliation":[]},{"given":"Bo","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Zeheng","family":"Wang","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2024,12,18]]},"reference":[{"key":"4197_CR1","doi-asserted-by":"publisher","first-page":"1365","DOI":"10.1109\/TED.2023.3341053","volume":"71","author":"J Wei","year":"2023","unstructured":"Wei J, Zheng Z, Tang G, et al. 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