{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,11]],"date-time":"2025-12-11T21:06:44Z","timestamp":1765487204098,"version":"3.37.3"},"reference-count":6,"publisher":"Springer Science and Business Media LLC","issue":"3","license":[{"start":{"date-parts":[[2025,2,11]],"date-time":"2025-02-11T00:00:00Z","timestamp":1739232000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2025,2,11]],"date-time":"2025-02-11T00:00:00Z","timestamp":1739232000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2025,3]]},"DOI":"10.1007\/s11432-024-4255-5","type":"journal-article","created":{"date-parts":[[2025,2,24]],"date-time":"2025-02-24T07:08:01Z","timestamp":1740380881000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["24.4 THz\u00b7V fT\u00d7BV figure-of-merit AlN\/GaN\/AlN MISHEMTs with thin AlN buffer layer"],"prefix":"10.1007","volume":"68","author":[{"given":"Chaoqun","family":"Zhang","sequence":"first","affiliation":[]},{"given":"Hong","family":"Zhou","sequence":"additional","affiliation":[]},{"given":"Sami","family":"Alghamdi","sequence":"additional","affiliation":[]},{"given":"Kun","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Zhihong","family":"Liu","sequence":"additional","affiliation":[]},{"given":"Yue","family":"Hao","sequence":"additional","affiliation":[]},{"given":"Jingcheng","family":"Zhang","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2025,2,11]]},"reference":[{"key":"4255_CR1","doi-asserted-by":"publisher","first-page":"45","DOI":"10.1109\/TED.2017.2770087","volume":"65","author":"B Romanczyk","year":"2018","unstructured":"Romanczyk B, Wienecke S, Guidry M, et al. Demonstration of constant 8 W\/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs. IEEE Trans Electron Devices, 2018, 65: 45\u201350","journal-title":"IEEE Trans Electron Devices"},{"key":"4255_CR2","doi-asserted-by":"publisher","first-page":"121","DOI":"10.1109\/JEDS.2020.3042050","volume":"9","author":"A Hickman","year":"2021","unstructured":"Hickman A, Chaudhuri R, Li L, et al. First RF power operation of AlN\/GaN\/AlN HEMTs with > 3 A\/mm and 3 W\/mm at 10 GHz. IEEE J Electron Devices Soc, 2021, 9: 121\u2013124","journal-title":"IEEE J Electron Devices Soc"},{"key":"4255_CR3","doi-asserted-by":"publisher","first-page":"1293","DOI":"10.1109\/LED.2019.2923085","volume":"40","author":"A Hickman","year":"2019","unstructured":"Hickman A, Chaudhuri R, Bader S J, et al. High breakdown voltage in RF AlN\/GaN\/AlN quantum well HEMTs. IEEE Electron Dev Lett, 2019, 40: 1293\u20131296","journal-title":"IEEE Electron Dev Lett"},{"key":"4255_CR4","doi-asserted-by":"publisher","first-page":"161","DOI":"10.1109\/LMWC.2022.3207978","volume":"33","author":"J S Moon","year":"2023","unstructured":"Moon J S, Grabar B, Wong J, et al. W-band graded-channel GaN HEMTs with record 45% power-added-efficiency at 94 GHz. IEEE Microw Wireless Tech Lett, 2023, 33: 161\u2013164","journal-title":"IEEE Microw Wireless Tech Lett"},{"key":"4255_CR5","first-page":"1","volume-title":"Proceedings of International Electron Devices Meeting (IEDM)","author":"L Yang","year":"2023","unstructured":"Yang L, Jia F, Lu H, et al. Record power performance of 33.1 W\/mm with 62.9 PAE at X-band and 14.4 W\/mm at Ka-band from AlGaN\/GaN\/AlN:Fe heterostucture. In: Proceedings of International Electron Devices Meeting (IEDM), 2023. 1\u20134"},{"key":"4255_CR6","doi-asserted-by":"publisher","first-page":"102103","DOI":"10.1063\/5.0080320","volume":"120","author":"P F Wang","year":"2022","unstructured":"Wang P F, Mi M H, Zhang M, et al. Demonstration of 16 THz V Johnson\u2019s figure-of-merit and 36 THz V fmax\u00b7VBK in ultrathin barrier AlGaN\/GaN HEMTs with slant-field-plate T-gates. Appl Phys Lett, 2022, 120: 102103","journal-title":"Appl Phys Lett"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-024-4255-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-024-4255-5\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-024-4255-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,2,24]],"date-time":"2025-02-24T07:08:04Z","timestamp":1740380884000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-024-4255-5"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,2,11]]},"references-count":6,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2025,3]]}},"alternative-id":["4255"],"URL":"https:\/\/doi.org\/10.1007\/s11432-024-4255-5","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,2,11]]},"assertion":[{"value":"29 July 2024","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"13 October 2024","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"16 December 2024","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"11 February 2025","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"139401"}}