{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,25]],"date-time":"2026-01-25T03:41:32Z","timestamp":1769312492500,"version":"3.49.0"},"reference-count":5,"publisher":"Springer Science and Business Media LLC","issue":"3","license":[{"start":{"date-parts":[[2025,2,12]],"date-time":"2025-02-12T00:00:00Z","timestamp":1739318400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2025,2,12]],"date-time":"2025-02-12T00:00:00Z","timestamp":1739318400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2025,3]]},"DOI":"10.1007\/s11432-024-4268-5","type":"journal-article","created":{"date-parts":[[2025,2,14]],"date-time":"2025-02-14T17:31:54Z","timestamp":1739554314000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Al2O3\/AlN\/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax \u00d7 LG"],"prefix":"10.1007","volume":"68","author":[{"given":"Lingjie","family":"Qin","sequence":"first","affiliation":[]},{"given":"Jiejie","family":"Zhu","sequence":"additional","affiliation":[]},{"given":"Bowen","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Yuxi","family":"Zhou","sequence":"additional","affiliation":[]},{"given":"Huantao","family":"Duan","sequence":"additional","affiliation":[]},{"given":"Huimei","family":"Ma","sequence":"additional","affiliation":[]},{"given":"Mengdi","family":"Li","sequence":"additional","affiliation":[]},{"given":"Simei","family":"Huang","sequence":"additional","affiliation":[]},{"given":"Jin","family":"Rao","sequence":"additional","affiliation":[]},{"given":"Xiaohua","family":"Ma","sequence":"additional","affiliation":[]},{"given":"Yue","family":"Hao","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2025,2,12]]},"reference":[{"key":"4268_CR1","doi-asserted-by":"publisher","first-page":"590","DOI":"10.1109\/LED.2023.3248277","volume":"44","author":"J Guo","year":"2023","unstructured":"Guo J, Zhu J, Liu S, et al. Tri-gate normally-off AlN\/GaN HEMTs with 2.36 W\/mm of power density and 67.5% power-added-efficiency at Vd = 12 V. IEEE Electron Device Lett, 2023, 44: 590\u2013593","journal-title":"IEEE Electron Device Lett"},{"key":"4268_CR2","first-page":"1","volume-title":"Proceedings of IEEE International Electron Devices Meeting (IEDM)","author":"M Micovic","year":"2016","unstructured":"Micovic M, Brown D F, Regan D, et al. High frequency GaN HEMTs for RF MMIC applications. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2016. 1\u20134"},{"key":"4268_CR3","first-page":"1","volume-title":"Proceedings of IEEE International Symposium on Circuits and Systems (ISCAS)","author":"K Nakatani","year":"2019","unstructured":"Nakatani K, Yamaguchi Y, Komatsuzaki Y, et al. Millimeter-wave GaN power amplifier MMICs for 5G application. In: Proceedings of IEEE International Symposium on Circuits and Systems (ISCAS), 2019. 1\u20134"},{"key":"4268_CR4","doi-asserted-by":"publisher","first-page":"549","DOI":"10.1109\/LED.2015.2421311","volume":"36","author":"Y Tang","year":"2015","unstructured":"Tang Y, Shinohara K, Regan D, et al. Ultrahigh-speed GaN high-electron-mobility transistors with fT\/fmax of 454\/444 GHz. IEEE Electron Device Lett, 2015, 36: 549\u2013551","journal-title":"IEEE Electron Device Lett"},{"key":"4268_CR5","doi-asserted-by":"publisher","first-page":"3001","DOI":"10.1109\/TED.2023.3269728","volume":"70","author":"Y He","year":"2023","unstructured":"He Y, Zhang L, Cheng Z, et al. Scaled InAlN\/GaN HEMT on sapphire with fT\/fmax of 190\/301 GHz. IEEE Trans Electron Devices, 2023, 70: 3001\u20133004","journal-title":"IEEE Trans Electron Devices"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-024-4268-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-024-4268-5\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-024-4268-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,2,15]],"date-time":"2025-02-15T04:04:53Z","timestamp":1739592293000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-024-4268-5"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,2,12]]},"references-count":5,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2025,3]]}},"alternative-id":["4268"],"URL":"https:\/\/doi.org\/10.1007\/s11432-024-4268-5","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,2,12]]},"assertion":[{"value":"23 September 2024","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"9 December 2024","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"27 December 2024","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"12 February 2025","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"139403"}}