{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,18]],"date-time":"2026-01-18T04:14:00Z","timestamp":1768709640347,"version":"3.49.0"},"reference-count":5,"publisher":"Springer Science and Business Media LLC","issue":"5","license":[{"start":{"date-parts":[[2025,4,17]],"date-time":"2025-04-17T00:00:00Z","timestamp":1744848000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2025,4,17]],"date-time":"2025-04-17T00:00:00Z","timestamp":1744848000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2025,5]]},"DOI":"10.1007\/s11432-024-4343-5","type":"journal-article","created":{"date-parts":[[2025,4,23]],"date-time":"2025-04-23T07:14:04Z","timestamp":1745392444000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT"],"prefix":"10.1007","volume":"68","author":[{"given":"Mao","family":"Jia","sequence":"first","affiliation":[]},{"given":"Bin","family":"Hou","sequence":"additional","affiliation":[]},{"given":"Ling","family":"Yang","sequence":"additional","affiliation":[]},{"given":"Meng","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Mei","family":"Wu","sequence":"additional","affiliation":[]},{"given":"Hao","family":"Lu","sequence":"additional","affiliation":[]},{"given":"Xitong","family":"Hong","sequence":"additional","affiliation":[]},{"given":"Zhiqiang","family":"Xue","sequence":"additional","affiliation":[]},{"given":"Jiale","family":"Du","sequence":"additional","affiliation":[]},{"given":"Qingyuan","family":"Chang","sequence":"additional","affiliation":[]},{"given":"Qian","family":"Xiao","sequence":"additional","affiliation":[]},{"given":"Xiaohua","family":"Ma","sequence":"additional","affiliation":[]},{"given":"Yue","family":"Hao","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2025,4,17]]},"reference":[{"key":"4343_CR1","doi-asserted-by":"publisher","first-page":"653","DOI":"10.1109\/TED.2020.3043213","volume":"68","author":"H Jiang","year":"2021","unstructured":"Jiang H, Lyu Q, Zhu R, et al. 1300 V normally-OFF p-GaN gate HEMTs on Si with high on-state drain current. IEEE Trans Electron Devices, 2021, 68: 653\u2013657","journal-title":"IEEE Trans Electron Devices"},{"key":"4343_CR2","doi-asserted-by":"publisher","first-page":"449","DOI":"10.1109\/TED.2022.3231566","volume":"70","author":"S W Tang","year":"2023","unstructured":"Tang S W, Bakeroot B, Huang Z H, et al. Using gate leakage conduction to understand positive gate bias induced threshold voltage shift in p-GaN gate HEMTs. IEEE Trans Electron Devices, 2023, 70: 449\u2013453","journal-title":"IEEE Trans Electron Devices"},{"key":"4343_CR3","doi-asserted-by":"publisher","first-page":"213506","DOI":"10.1063\/5.0010699","volume":"116","author":"S Wahid","year":"2020","unstructured":"Wahid S, Chowdhury N, Alam M K, et al. Barrier heights and Fermi level pinning in metal contacts on p-type GaN. Appl Phys Lett, 2020, 116: 213506","journal-title":"Appl Phys Lett"},{"key":"4343_CR4","doi-asserted-by":"publisher","first-page":"669","DOI":"10.1109\/LED.2021.3068296","volume":"42","author":"M Hua","year":"2021","unstructured":"Hua M, Wang C, Chen J, et al. Gate current transport in enhancement-mode p-n junction\/AlGaN\/GaN (PNJ) HEMT. IEEE Electron Device Lett, 2021, 42: 669\u2013672","journal-title":"IEEE Electron Device Lett"},{"key":"4343_CR5","doi-asserted-by":"publisher","first-page":"5365","DOI":"10.1109\/TED.2018.2877262","volume":"65","author":"A Stockman","year":"2018","unstructured":"Stockman A, Masin F, Meneghini M, et al. Gate conduction mechanisms and lifetime modeling of p-gate Al-GaN\/GaN high-electron-mobility transistors. IEEE Trans Electron Devices, 2018, 65: 5365\u20135372","journal-title":"IEEE Trans Electron Devices"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-024-4343-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-024-4343-5\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-024-4343-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,4,30]],"date-time":"2025-04-30T03:19:31Z","timestamp":1745983171000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-024-4343-5"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,4,17]]},"references-count":5,"journal-issue":{"issue":"5","published-print":{"date-parts":[[2025,5]]}},"alternative-id":["4343"],"URL":"https:\/\/doi.org\/10.1007\/s11432-024-4343-5","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,4,17]]},"assertion":[{"value":"22 September 2024","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"13 December 2024","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"14 March 2025","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"17 April 2025","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"159401"}}