{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:10:05Z","timestamp":1747372205632,"version":"3.40.5"},"reference-count":5,"publisher":"Springer Science and Business Media LLC","issue":"6","license":[{"start":{"date-parts":[[2025,5,14]],"date-time":"2025-05-14T00:00:00Z","timestamp":1747180800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2025,5,14]],"date-time":"2025-05-14T00:00:00Z","timestamp":1747180800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2025,6]]},"DOI":"10.1007\/s11432-024-4407-x","type":"journal-article","created":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T04:33:00Z","timestamp":1747369980000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1\u2212xO2 ferroelectric film"],"prefix":"10.1007","volume":"68","author":[{"given":"Xiaopeng","family":"Li","sequence":"first","affiliation":[]},{"given":"Lu","family":"Tai","sequence":"additional","affiliation":[]},{"given":"Xiaoyu","family":"Dou","sequence":"additional","affiliation":[]},{"given":"Yang","family":"Feng","sequence":"additional","affiliation":[]},{"given":"Dong","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Xuepeng","family":"Zhan","sequence":"additional","affiliation":[]},{"given":"Jixuan","family":"Wu","sequence":"additional","affiliation":[]},{"given":"Xiao","family":"Gong","sequence":"additional","affiliation":[]},{"given":"Jiezhi","family":"Chen","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2025,5,14]]},"reference":[{"key":"4407_CR1","doi-asserted-by":"publisher","first-page":"200405","DOI":"10.1007\/s11432-023-3780-7","volume":"66","author":"Z H Zhang","year":"2023","unstructured":"Zhang Z H, Tian G L, Huo J L, et al. Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications. Sci China Inf Sci, 2023, 66: 200405","journal-title":"Sci China Inf Sci"},{"key":"4407_CR2","first-page":"1","volume-title":"Proceedings of the IEEE Symposium on VLSI Technology and Circuits","author":"M Lee","year":"2024","unstructured":"Lee M, Kim J, Le D N, et al. BEOL compatible ultra-low operating voltage (0.5 V) and preconfigured switching polarization states in effective 3 nm ferroelectric Hf0.5Zr0.5O2 capacitors. In: Proceedings of the IEEE Symposium on VLSI Technology and Circuits, 2024. 1\u20132"},{"key":"4407_CR3","doi-asserted-by":"publisher","first-page":"092903","DOI":"10.1063\/5.0223115","volume":"125","author":"L Tai","year":"2024","unstructured":"Tai L, Li X, Dou X, et al. Mechanisms for enhanced ferroelectric properties in ultra-thin Hf0.5Zr0.5O2 film under low-temperature, long-term annealing. Appl Phys Lett, 2024, 125: 092903","journal-title":"Appl Phys Lett"},{"key":"4407_CR4","doi-asserted-by":"publisher","first-page":"252904","DOI":"10.1063\/5.0035139","volume":"117","author":"J Wu","year":"2020","unstructured":"Wu J, Mo F, Saraya T, et al. A first-principles study on ferroelectric phase formation of Si-doped HfO2 through nucleation and phase transition in thermal process. Appl Phys Lett, 2020, 117: 252904","journal-title":"Appl Phys Lett"},{"key":"4407_CR5","doi-asserted-by":"publisher","first-page":"4370","DOI":"10.1557\/s43578-021-00415-y","volume":"36","author":"M Lederer","year":"2021","unstructured":"Lederer M, Mertens K, Olivo R, et al. Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide. J Mater Res, 2021, 36: 4370\u20134378","journal-title":"J Mater Res"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-024-4407-x.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-024-4407-x\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-024-4407-x.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T04:33:02Z","timestamp":1747369982000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-024-4407-x"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,5,14]]},"references-count":5,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2025,6]]}},"alternative-id":["4407"],"URL":"https:\/\/doi.org\/10.1007\/s11432-024-4407-x","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,5,14]]},"assertion":[{"value":"7 December 2024","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"18 March 2025","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"23 April 2025","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"14 May 2025","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"160408"}}