{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,16]],"date-time":"2025-09-16T20:35:30Z","timestamp":1758054930122,"version":"3.44.0"},"reference-count":42,"publisher":"Springer Science and Business Media LLC","issue":"10","license":[{"start":{"date-parts":[[2025,9,10]],"date-time":"2025-09-10T00:00:00Z","timestamp":1757462400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2025,9,10]],"date-time":"2025-09-10T00:00:00Z","timestamp":1757462400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2025,10]]},"DOI":"10.1007\/s11432-024-4460-y","type":"journal-article","created":{"date-parts":[[2025,9,15]],"date-time":"2025-09-15T05:28:30Z","timestamp":1757914110000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["High-performance SiN\/AlGaN\/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts"],"prefix":"10.1007","volume":"68","author":[{"given":"Mengdi","family":"Li","sequence":"first","affiliation":[]},{"given":"Jiejie","family":"Zhu","sequence":"additional","affiliation":[]},{"given":"Sheng","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Bowen","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Yuxi","family":"Zhou","sequence":"additional","affiliation":[]},{"given":"Dayan","family":"Yuan","sequence":"additional","affiliation":[]},{"given":"Lingjie","family":"Qin","sequence":"additional","affiliation":[]},{"given":"Mingchen","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Qingyuan","family":"Chang","sequence":"additional","affiliation":[]},{"given":"Chupeng","family":"Yi","sequence":"additional","affiliation":[]},{"given":"Ke","family":"Wei","sequence":"additional","affiliation":[]},{"given":"Xinyu","family":"Liu","sequence":"additional","affiliation":[]},{"given":"Xiaohua","family":"Ma","sequence":"additional","affiliation":[]},{"given":"Yue","family":"Hao","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2025,9,10]]},"reference":[{"key":"4460_CR1","doi-asserted-by":"publisher","first-page":"626","DOI":"10.1109\/LED.2011.2118736","volume":"32","author":"Y Hao","year":"2011","unstructured":"Hao Y, Yang L, Ma X, et al. High-performance microwave gate-recessed AlGaN\/AlN\/GaN MOS-HEMT with 73% power-added efficiency. IEEE Electron Device Lett, 2011, 32: 626\u2013628","journal-title":"IEEE Electron Device Lett"},{"key":"4460_CR2","doi-asserted-by":"publisher","first-page":"182405","DOI":"10.1007\/s11432-022-3694-4","volume":"66","author":"H C Zhang","year":"2023","unstructured":"Zhang H C, Sun Y, Hu K P, et al. Boosted high-temperature electrical characteristics of AlGaN\/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers. Sci China Inf Sci, 2023, 66: 182405","journal-title":"Sci China Inf Sci"},{"key":"4460_CR3","doi-asserted-by":"publisher","first-page":"287","DOI":"10.1109\/JPROC.2007.911060","volume":"96","author":"U K Mishra","year":"2008","unstructured":"Mishra U K, Shen Likun U K, Kazior T E, et al. GaN-based RF power devices and amplifiers. Proc IEEE, 2008, 96: 287\u2013305","journal-title":"Proc IEEE"},{"key":"4460_CR4","volume-title":"Proceedings of the 64th Device Research Conference, State College","author":"Y F Wu","year":"2006","unstructured":"Wu Y F, Moore M, Saxler A, et al. 40-W\/mm double field-plated GaN HEMTs. In: Proceedings of the 64th Device Research Conference, State College, 2006"},{"key":"4460_CR5","doi-asserted-by":"publisher","first-page":"676","DOI":"10.1109\/LED.2007.901665","volume":"28","author":"W Saito","year":"2007","unstructured":"Saito W, Nitta T, Kakiuchi Y, et al. On-resistance modulation of high voltage GaN HEMT on sapphire substrate under high applied voltage. IEEE Electron Device Lett, 2007, 28: 676\u2013678","journal-title":"IEEE Electron Device Lett"},{"key":"4460_CR6","volume-title":"Proceedings of the International Meeting for Future of Electron Devices, Suita","author":"K Akira","year":"2013","unstructured":"Akira K, Asano T, Tokuda H, et al. High-voltage AlGaN\/GaN HEMTs fabricated on free-standing GaN substrates. In: Proceedings of the International Meeting for Future of Electron Devices, Suita, 2013"},{"key":"4460_CR7","volume-title":"Proceedings of the International Electron Devices Meeting (IEDM), Washington","author":"S Ohara","year":"1995","unstructured":"Ohara S, Yamada H, Iwai T, et al. InGaP\/GaAs power HBTs with a low bias voltage. In: Proceedings of the International Electron Devices Meeting (IEDM), Washington, 1995"},{"key":"4460_CR8","doi-asserted-by":"publisher","first-page":"1063","DOI":"10.1049\/el:20020700","volume":"38","author":"S H Chen","year":"2002","unstructured":"Chen S H, Chang L, Chang E Y, et al. High power Al0.3Ga0.7As\/In0.2Ga0.8 as enhancement-mode PHEMT for low-voltage wireless communication systems. Electron Lett, 2002, 38: 1063\u20131064","journal-title":"Electron Lett"},{"key":"4460_CR9","doi-asserted-by":"publisher","first-page":"5306","DOI":"10.1109\/TED.2020.3034076","volume":"67","author":"H W Then","year":"2020","unstructured":"Then H W, Radosavljevic M, Jun K, et al. Gallium nitride and silicon transistors on 300 mm silicon wafers enabled by 3-D monolithic heterogeneous integration. IEEE Trans Electron Device, 2020, 67: 5306\u20135314","journal-title":"IEEE Trans Electron Device"},{"key":"4460_CR10","volume-title":"Proceedings of the International Electron Devices Meeting (IEDM), San Francisco","author":"H W Then","year":"2019","unstructured":"Then H W, Dasgupta S, Radosavljevic M, et al. 3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications. In: Proceedings of the International Electron Devices Meeting (IEDM), San Francisco, 2019"},{"key":"4460_CR11","doi-asserted-by":"publisher","first-page":"1304","DOI":"10.1109\/LED.2020.3010810","volume":"41","author":"Z Zheng","year":"2020","unstructured":"Zheng Z, Song W, Lei J, et al. GaN HEMT with convergent channel for low intrinsic knee voltage. IEEE Electron Device Lett, 2020, 41: 1304\u20131307","journal-title":"IEEE Electron Device Lett"},{"key":"4460_CR12","volume-title":"Proceedings of the Symposium on VLSI Technology (VLSI Technology), Kyoto","author":"H W Then","year":"2015","unstructured":"Then H W, Chow L A, Dasgupta S, et al. High-performance low-leakage enhancement-mode high-K dielectric GaN MOSHEMTs for energy-efficient, compact voltage regulators and RF power amplifiers for low-power mobile SoCs. In: Proceedings of the Symposium on VLSI Technology (VLSI Technology), Kyoto, 2015"},{"key":"4460_CR13","doi-asserted-by":"publisher","first-page":"49","DOI":"10.1109\/TED.2020.3037888","volume":"68","author":"S Zhang","year":"2021","unstructured":"Zhang S, Liu X, Wei K, et al. Suppression of gate leakage current in Ka-band AlGaN\/GaN HEMT with 5-nm SiN gate dielectric grown by plasma-enhanced ALD. IEEE Trans Electron Dev, 2021, 68: 49\u201352","journal-title":"IEEE Trans Electron Dev"},{"key":"4460_CR14","volume-title":"Proceedings of the International Conference on Electronics, Computing and Communication Technologies (CONECCT), Bangalore","author":"K Srikanth","year":"2018","unstructured":"Srikanth K, Kushwah B, Dutta G, et al. AlInN\/GaN MIS-HEMTs with high pressure oxidized aluminium as gate dielectric. In: Proceedings of the International Conference on Electronics, Computing and Communication Technologies (CONECCT), Bangalore, 2018"},{"key":"4460_CR15","doi-asserted-by":"publisher","first-page":"1621","DOI":"10.1109\/LED.2022.3203164","volume":"43","author":"S Liu","year":"2022","unstructured":"Liu S, Zhu J, Guo J, et al. Improved breakdown voltage and low damage E-mode operation of AlON\/AlN\/GaN HEMTs using plasma oxidation treatment. IEEE Electron Device Lett, 2022, 43: 1621\u20131624","journal-title":"IEEE Electron Device Lett"},{"key":"4460_CR16","doi-asserted-by":"publisher","first-page":"785","DOI":"10.1109\/LED.2012.2191134","volume":"33","author":"D J Denninghoff","year":"2012","unstructured":"Denninghoff D J, Dasgupta S, Lu J, et al. Design of high-aspect-ratio T-gates on N-polar GaN\/AlGaN MIS-HEMTs for high fmax. IEEE Electron Device Lett, 2012, 33: 785\u2013787","journal-title":"IEEE Electron Device Lett"},{"key":"4460_CR17","doi-asserted-by":"publisher","first-page":"549","DOI":"10.1109\/LED.2015.2421311","volume":"36","author":"Y Tang","year":"2015","unstructured":"Tang Y, Shinohara K, Regan D, et al. Ultrahigh-speed GaN high-electron-mobility transistors with fT\/fmax of 454\/444 GHz. IEEE Electron Device Lett, 2015, 36: 549\u2013551","journal-title":"IEEE Electron Device Lett"},{"key":"4460_CR18","doi-asserted-by":"publisher","first-page":"205","DOI":"10.1109\/LED.2006.870419","volume":"27","author":"F Recht","year":"2006","unstructured":"Recht F, McCarthy L, Rajan S, et al. Nonalloyed ohmic contacts in AlGaN\/GaN HEMTs by ion implantation with reduced activation annealing temperature. IEEE Electron Device Lett, 2006, 27: 205\u2013207","journal-title":"IEEE Electron Device Lett"},{"key":"4460_CR19","doi-asserted-by":"publisher","first-page":"661","DOI":"10.1109\/LED.2008.923318","volume":"29","author":"T Zimmermann","year":"2008","unstructured":"Zimmermann T, Deen D, Cao Y, et al. AlN\/GaN insulated-gate HEMTs with 2.3 A\/mm output current and 480 mS\/mm transconductance. IEEE Electron Device Lett, 2008, 29: 661\u2013664","journal-title":"IEEE Electron Device Lett"},{"key":"4460_CR20","doi-asserted-by":"publisher","first-page":"988","DOI":"10.1109\/LED.2012.2196751","volume":"33","author":"Y Yue","year":"2012","unstructured":"Yue Y, Hu Z, Guo J, et al. InAlN\/AlN\/GaN HEMTs with regrown ohmic contacts and fT of 370 GHz. IEEE Electron Device Lett, 2012, 33: 988\u2013990","journal-title":"IEEE Electron Device Lett"},{"key":"4460_CR21","doi-asserted-by":"publisher","first-page":"207317","DOI":"10.1016\/j.micrna.2022.207317","volume":"168","author":"B Mounika","year":"2022","unstructured":"Mounika B, Ajayan J, Bhattacharya S, et al. Recent developments in materials, architectures and processing of AlGaN\/GaN HEMTs for future RF and power electronic applications: a critical review. Micro Nanostruct, 2022, 168: 207317","journal-title":"Micro Nanostruct"},{"key":"4460_CR22","doi-asserted-by":"publisher","first-page":"106982","DOI":"10.1016\/j.mssp.2022.106982","volume":"151","author":"J Ajayan","year":"2022","unstructured":"Ajayan J, Nirmal D, Mohankumar P, et al. Challenges in material processing and reliability issues in AlGaN\/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: a critical review. Mater Sci Semiconductor Process, 2022, 151: 106982","journal-title":"Mater Sci Semiconductor Process"},{"key":"4460_CR23","doi-asserted-by":"publisher","first-page":"1048","DOI":"10.1109\/JPROC.2002.1021569","volume":"90","author":"S C Binari","year":"2002","unstructured":"Binari S C, Klein P B, Kazior T E. Trapping effects in GaN and SiC microwave FETs. Proc IEEE, 2002, 90: 1048\u20131058","journal-title":"Proc IEEE"},{"key":"4460_CR24","doi-asserted-by":"publisher","first-page":"1264","DOI":"10.1109\/JEDS.2019.2947564","volume":"7","author":"K Ranjan","year":"2019","unstructured":"Ranjan K, Arulkumaran S, Ng G I, et al. Investigation of self-heating effect on DC and RF performances in AlGaN\/GaN HEMTs on CVD-Diamond. IEEE J Electron Device Soc, 2019, 7: 1264\u20131269","journal-title":"IEEE J Electron Device Soc"},{"key":"4460_CR25","doi-asserted-by":"publisher","first-page":"1718","DOI":"10.1109\/TED.2020.2976636","volume":"67","author":"A Soni","year":"2020","unstructured":"Soni A, Ajay A, Shrivastava M. Novel drain-connected field plate GaN HEMT designs for improved VBD-RON tradeoff and RF PA performance. IEEE Trans Electron Device, 2020, 67: 1718\u20131725","journal-title":"IEEE Trans Electron Device"},{"key":"4460_CR26","doi-asserted-by":"publisher","first-page":"2162","DOI":"10.1109\/TED.2015.2428613","volume":"62","author":"S Gustafsson","year":"2015","unstructured":"Gustafsson S, Jr-Tai Chen S, Bergsten J, et al. Dispersive effects in microwave AlGaN\/AlN\/GaN HEMTs with carbon-doped buffer. IEEE Trans Electron Device, 2015, 62: 2162\u20132169","journal-title":"IEEE Trans Electron Device"},{"key":"4460_CR27","volume-title":"Proceedings of the Symposium on VLSI Technology (VLSI Technology)","author":"Z Liu","year":"2019","unstructured":"Liu Z, Xie H, Lee K H, et al. GaN HEMTs with breakdown voltage of 2200 V realized on a 200 mm GaN-on-insulator (GNOI)-on-Si wafer. In: Proceedings of the Symposium on VLSI Technology (VLSI Technology), 2019"},{"key":"4460_CR28","doi-asserted-by":"publisher","first-page":"619","DOI":"10.1109\/LED.2017.2689810","volume":"38","author":"W Xing","year":"2017","unstructured":"Xing W, Liu Z, Qiu H, et al. Planar-nanostrip-channel InAlN\/GaN HEMTs on Si with improved gm and fT linearity. IEEE Electron Device Lett, 2017, 38: 619\u2013622","journal-title":"IEEE Electron Device Lett"},{"key":"4460_CR29","doi-asserted-by":"publisher","first-page":"303","DOI":"10.1109\/LED.2015.2404358","volume":"36","author":"P Altuntas","year":"2015","unstructured":"Altuntas P, Lecourt F, Cutivet A, et al. Power performance at 40 GHz of AlGaN\/GaN high-electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate. IEEE Electron Device Lett, 2015, 36: 303\u2013305","journal-title":"IEEE Electron Device Lett"},{"key":"4460_CR30","volume-title":"Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Bruges","author":"B de Jaeger","year":"2012","unstructured":"de Jaeger B, van Hove M, Wellekens D, et al. Au-free CMOS-compatible AlGaN\/GaN HEMT processing on 200 mm Si substrates. In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Bruges, 2012"},{"key":"4460_CR31","volume-title":"Proceedings of the International Electron Devices Meeting (IEDM), San Francisco","author":"B Parvais","year":"2020","unstructured":"Parvais B, Alian A, Peralagu U, et al. GaN-on-Si Mm-wave RF devices integrated in a 200mm CMOS compatible 3-level Cu BEOL. In: Proceedings of the International Electron Devices Meeting (IEDM), San Francisco, 2020"},{"key":"4460_CR32","doi-asserted-by":"publisher","first-page":"101","DOI":"10.1109\/JEDS.2023.3234235","volume":"11","author":"J Kotani","year":"2023","unstructured":"Kotani J, Yaita J, Homma K, et al. 24.4 W\/mm X-band GaN HEMTs on AlN substrates with the LPCVD-Grown high-breakdown-field SiNx layer. IEEE J Electron Device Soc, 2023, 11: 101\u2013106","journal-title":"IEEE J Electron Device Soc"},{"key":"4460_CR33","doi-asserted-by":"publisher","first-page":"614","DOI":"10.1109\/TED.2015.2510630","volume":"63","author":"Y Shi","year":"2016","unstructured":"Shi Y, Huang S, Bao Q, et al. Normally OFF GaN-on-Si MIS-HEMTs fabricated with LPCVD-SiNx passivation and high-temperature gate recess. IEEE Trans Electron Device, 2016, 63: 614\u2013619","journal-title":"IEEE Trans Electron Device"},{"key":"4460_CR34","doi-asserted-by":"publisher","first-page":"420","DOI":"10.1109\/16.906430","volume":"48","author":"E M Chumbes","year":"2001","unstructured":"Chumbes E M, Shealy J R, Schremer A T, et al. AlGaN\/GaN high electron mobility transistors on Si(111) substrates. IEEE Trans Electron Device, 2001, 48: 420\u2013426","journal-title":"IEEE Trans Electron Device"},{"key":"4460_CR35","doi-asserted-by":"publisher","first-page":"2231","DOI":"10.1109\/TED.2013.2260753","volume":"60","author":"H Y Liu","year":"2013","unstructured":"Liu H Y, Lee C S, Hsu W C, et al. Investigations of AlGaN\/AlN\/GaN MOS-HEMTs on Si substrate by ozone water oxidation method. IEEE Trans Electron Device, 2013, 60: 2231\u20132237","journal-title":"IEEE Trans Electron Device"},{"key":"4460_CR36","doi-asserted-by":"publisher","first-page":"57046","DOI":"10.1109\/ACCESS.2021.3072060","volume":"9","author":"A Bose","year":"2021","unstructured":"Bose A, Biswas D, Hishiki S, et al. A temperature stable amplifier characteristics of AlGaN\/GaN HEMTs on 3C-SiC\/Si. IEEE Access, 2021, 9: 57046\u201357053","journal-title":"IEEE Access"},{"key":"4460_CR37","doi-asserted-by":"publisher","first-page":"29","DOI":"10.1109\/LED.2022.3220693","volume":"44","author":"Y Cheng","year":"2023","unstructured":"Cheng Y, Ng Y H, Zheng Z, et al. RF enhancement-mode p-GaN gate HEMT on 200 mm-Si substrates. IEEE Electron Device Lett, 2023, 44: 29\u201331","journal-title":"IEEE Electron Device Lett"},{"key":"4460_CR38","doi-asserted-by":"publisher","first-page":"188","DOI":"10.1109\/LED.2021.3135703","volume":"43","author":"H Lu","year":"2022","unstructured":"Lu H, Hou B, Yang L, et al. High RF performance GaN-on-Si HEMTs with passivation implanted termination. IEEE Electron Device Lett, 2022, 43: 188\u2013191","journal-title":"IEEE Electron Device Lett"},{"key":"4460_CR39","doi-asserted-by":"publisher","first-page":"141","DOI":"10.1109\/LMWC.2020.3036389","volume":"31","author":"H Xie","year":"2021","unstructured":"Xie H, Liu Z, Hu W, et al. GaN-on-Si HEMTs fabricated with Si CMOS-compatible metallization for power amplifiers in low-power mobile SoCs. IEEE Microw Wireless Compon Lett, 2021, 31: 141\u2013144","journal-title":"IEEE Microw Wireless Compon Lett"},{"key":"4460_CR40","first-page":"397","volume-title":"Proceedings of the MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","author":"H Xie","year":"2021","unstructured":"Xie H, Liu Z, Hu W, et al. CMOS-compatible InAlN\/GaN HEMTs on silicon for RF power amplifiers in 5G mobile SoCs. In: Proceedings of the MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2021: 397\u2013399"},{"key":"4460_CR41","doi-asserted-by":"publisher","first-page":"016503","DOI":"10.35848\/1882-0786\/ac428b","volume":"15","author":"H Xie","year":"2022","unstructured":"Xie H, Liu Z, Hu W, et al. AlN\/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs. Appl Phys Express, 2022, 15: 016503","journal-title":"Appl Phys Express"},{"key":"4460_CR42","doi-asserted-by":"publisher","first-page":"40","DOI":"10.1109\/LED.2024.3495672","volume":"46","author":"G Gao","year":"2025","unstructured":"Gao G, Liu Z, Hao L, et al. E-mode AlN\/GaN HEMTs on Si with 80.4% PAE at 3.6 GHz for low-supply-voltage RF power applications. IEEE Electron Device Lett, 2025, 46: 40\u201343","journal-title":"IEEE Electron Device Lett"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-024-4460-y.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-024-4460-y\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-024-4460-y.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,9,15]],"date-time":"2025-09-15T07:03:15Z","timestamp":1757919795000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-024-4460-y"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,9,10]]},"references-count":42,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2025,10]]}},"alternative-id":["4460"],"URL":"https:\/\/doi.org\/10.1007\/s11432-024-4460-y","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,9,10]]},"assertion":[{"value":"10 December 2024","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"5 March 2025","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"23 May 2025","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"10 September 2025","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"202402"}}