{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,13]],"date-time":"2026-05-13T17:30:58Z","timestamp":1778693458537,"version":"3.51.4"},"reference-count":57,"publisher":"Springer Science and Business Media LLC","issue":"3","license":[{"start":{"date-parts":[[2026,1,14]],"date-time":"2026-01-14T00:00:00Z","timestamp":1768348800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2026,1,14]],"date-time":"2026-01-14T00:00:00Z","timestamp":1768348800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2026,3]]},"DOI":"10.1007\/s11432-025-4572-5","type":"journal-article","created":{"date-parts":[[2026,1,24]],"date-time":"2026-01-24T02:52:58Z","timestamp":1769223178000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["High ON\/OFF and high FoM of fmax\u00d7BV\u00d7Lg InAlN\/GaN HEMTs by using polycrystalline-AlN cap"],"prefix":"10.1007","volume":"69","author":[{"given":"Shiming","family":"Li","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hao","family":"Lu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ling","family":"Yang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mei","family":"Wu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bin","family":"Hou","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Meng","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaohua","family":"Ma","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yue","family":"Hao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2026,1,14]]},"reference":[{"key":"4572_CR1","doi-asserted-by":"publisher","first-page":"946","DOI":"10.3390\/mi12080946","volume":"12","author":"Z Ren","year":"2021","unstructured":"Ren Z, Xu J, Le X, et al. Heterogeneous wafer bonding technology and thin-film transfer technology-enabling platform for the next generation applications beyond 5G. Micromachines, 2021, 12: 946","journal-title":"Micromachines"},{"key":"4572_CR2","doi-asserted-by":"publisher","first-page":"141","DOI":"10.1109\/LMWC.2020.3036389","volume":"31","author":"H Xie","year":"2021","unstructured":"Xie H, Liu Z, Hu W, et al. GaN-on-Si HEMTs fabricated with Si CMOS-compatible metallization for power amplifiers in low-power mobile SoCs. IEEE Microw Wireless Compon Lett, 2021, 31: 141\u2013144","journal-title":"IEEE Microw Wireless Compon Lett"},{"key":"4572_CR3","doi-asserted-by":"publisher","first-page":"15529","DOI":"10.1109\/ACCESS.2020.2967027","volume":"8","author":"R Sun","year":"2020","unstructured":"Sun R, Lai J, Chen W, et al. GaN power integration for high frequency and high efficiency power applications: a review. IEEE Access, 2020, 8: 15529\u201315542","journal-title":"IEEE Access"},{"key":"4572_CR4","doi-asserted-by":"publisher","first-page":"1537","DOI":"10.1109\/TCPMT.2024.3447079","volume":"14","author":"M Wang","year":"2024","unstructured":"Wang M, Gao P, Shi F, et al. Advanced packaging technology of GaN HEMT module for high-power and high-frequency applications: a review. IEEE Trans Compon Packag Manufact Technol, 2024, 14: 1537\u20131550","journal-title":"IEEE Trans Compon Packag Manufact Technol"},{"key":"4572_CR5","doi-asserted-by":"publisher","first-page":"16","DOI":"10.1109\/EDR.2024.3491716","volume":"1","author":"T Garg","year":"2024","unstructured":"Garg T, Kale S. Recent developments, reliability issues, challenges and applications of GaN HEMT technology. IEEE Electron Devices Rev, 2024, 1: 16\u201330","journal-title":"IEEE Electron Devices Rev"},{"key":"4572_CR6","doi-asserted-by":"publisher","first-page":"207317","DOI":"10.1016\/j.micrna.2022.207317","volume":"168","author":"B Mounika","year":"2022","unstructured":"Mounika B, Ajayan J, Bhattacharya S, et al. Recent developments in materials, architectures and processing of AlGaN\/GaN HEMTs for future RF and power electronic applications: a critical review. Micro NanoStruct, 2022, 168: 207317","journal-title":"Micro NanoStruct"},{"key":"4572_CR7","doi-asserted-by":"publisher","first-page":"106982","DOI":"10.1016\/j.mssp.2022.106982","volume":"151","author":"J Ajayan","year":"2022","unstructured":"Ajayan J, Nirmal D, Mohankumar P, et al. Challenges in material processing and reliability issues in AlGaN\/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: a critical review. Mater Sci Semicond Process, 2022, 151: 106982","journal-title":"Mater Sci Semicond Process"},{"key":"4572_CR8","doi-asserted-by":"publisher","first-page":"169403","DOI":"10.1007\/s11432-024-4003-y","volume":"67","author":"X Wang","year":"2024","unstructured":"Wang X, Lin Z Y, Sun Y H, et al. Suppression of the regrowth interface leakage current in AlGaN\/GaN HEMTs by Fe doped GaN substrate. Sci China Inf Sci, 2024, 67: 169403","journal-title":"Sci China Inf Sci"},{"key":"4572_CR9","doi-asserted-by":"publisher","first-page":"229402","DOI":"10.1007\/s11432-024-4164-1","volume":"67","author":"Q Y Chang","year":"2024","unstructured":"Chang Q Y, Hou B, Yang L, et al. High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. Sci China Inf Sci, 2024, 67: 229402","journal-title":"Sci China Inf Sci"},{"key":"4572_CR10","doi-asserted-by":"publisher","first-page":"119402","DOI":"10.1007\/s11432-022-3720-9","volume":"67","author":"S R An","year":"2024","unstructured":"An S R, Mi M H, Wang P F, et al. A novel multi-threshold coupling InAlN\/GaN double-channel HEMT for improving transconductance flatness. Sci China Inf Sci, 2024, 67: 119402","journal-title":"Sci China Inf Sci"},{"key":"4572_CR11","doi-asserted-by":"publisher","first-page":"510","DOI":"10.1109\/55.962646","volume":"22","author":"J Kuzmik","year":"2001","unstructured":"Kuzmik J. Power electronics on InAlN\/(In)GaN: prospect for a record performance. IEEE Electron Device Lett, 2001, 22: 510\u2013512","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR12","first-page":"1","volume-title":"Proceedings of International Electron Devices Meeting","author":"F Medjdoub","year":"2006","unstructured":"Medjdoub F, Carlin J-F, Gonschorek M et al. Can InAlN\/GaN be an alternative to high power\/high temperature AlGaN\/GaN devices? In: Proceedings of International Electron Devices Meeting, 2006. 1\u20134"},{"key":"4572_CR13","doi-asserted-by":"publisher","first-page":"093714","DOI":"10.1063\/1.2917290","volume":"103","author":"M Gonschorek","year":"2008","unstructured":"Gonschorek M, Carlin J-F, Feltin E et al. Two-dimensional electron gas density in Al1xInxN\/AlN\/GaN heterostructures (0.03 \u2a7d x \u2a7d 0.23). J Appl Phys, 2008, 103: 093714","journal-title":"J Appl Phys"},{"key":"4572_CR14","doi-asserted-by":"publisher","first-page":"2","DOI":"10.1109\/LED.2009.2034875","volume":"31","author":"A Crespo","year":"2010","unstructured":"Crespo A, Bellot M M, Chabak K D, et al. High-power Ka-band performance of AlInN\/GaN HEMT with 9.8-nm-thin barrier. IEEE Electron Device Lett, 2010, 31: 2\u20134","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR15","doi-asserted-by":"publisher","first-page":"2144","DOI":"10.1109\/TED.2010.2055292","volume":"57","author":"J Kuzmik","year":"2010","unstructured":"Kuzmik J, Ostermaier C, Pozzovivo G, et al. Proposal and performance analysis of normally off n++ GaN\/InAlN\/AlN\/GaN HEMTs with 1-nm-thick InAlN barrier. IEEE Trans Electron Devices, 2010, 57: 2144\u20132154","journal-title":"IEEE Trans Electron Devices"},{"key":"4572_CR16","doi-asserted-by":"publisher","first-page":"3099","DOI":"10.1109\/TED.2013.2277772","volume":"60","author":"P Saunier","year":"2013","unstructured":"Saunier P, Schuette M L, Chou T M, et al. InAlN barrier scaled devices for very high ft and for low-voltage RF applications. IEEE Trans Electron Devices, 2013, 60: 3099\u20133104","journal-title":"IEEE Trans Electron Devices"},{"key":"4572_CR17","doi-asserted-by":"publisher","first-page":"08JN14","DOI":"10.7567\/JJAP.52.08JN14","volume":"52","author":"Y Yue","year":"2013","unstructured":"Yue Y, Hu Z, Guo J, et al. Ultrascaled InAlN\/GaN high electron mobility transistors with cutoff frequency of 400 GHz. Jpn J Appl Phys, 2013, 52: 08JN14","journal-title":"Jpn J Appl Phys"},{"key":"4572_CR18","doi-asserted-by":"publisher","first-page":"1364","DOI":"10.1109\/LED.2011.2162087","volume":"32","author":"S Tirelli","year":"2011","unstructured":"Tirelli S, Marti D, Sun H, et al. Fully passivated AlInN\/GaN HEMTs with fT\/fmax of 205\/220 GHz. IEEE Electron Device Lett, 2011, 32: 1364\u20131366","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR19","doi-asserted-by":"publisher","first-page":"527","DOI":"10.1109\/LED.2014.2313023","volume":"35","author":"B P Downey","year":"2014","unstructured":"Downey B P, Meyer D J, Katzer D S, et al. SiNx\/InAlN\/AlN\/GaN MIS-HEMTs with 10.8 THz \u00b7 V Johnson figure of merit. IEEE Electron Device Lett, 2014, 35: 527\u2013529","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR20","doi-asserted-by":"publisher","first-page":"1525","DOI":"10.1109\/LED.2011.2164613","volume":"32","author":"D S Lee","year":"2011","unstructured":"Lee D S, Gao X, Guo S, et al. 300-GHz InAlN\/GaN HEMTs with InGaN back barrier. IEEE Electron Device Lett, 2011, 32: 1525\u20131527","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR21","doi-asserted-by":"publisher","first-page":"755","DOI":"10.1109\/LED.2011.2132751","volume":"32","author":"D S Lee","year":"2011","unstructured":"Lee D S, Chung J W, Wang H, et al. 245-GHz InAlN\/GaN HEMTs with oxygen plasma treatment. IEEE Electron Device Lett, 2011, 32: 755\u2013757","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR22","doi-asserted-by":"publisher","first-page":"617","DOI":"10.1109\/LED.2011.2111352","volume":"32","author":"D S Lee","year":"2011","unstructured":"Lee D S, Gao X, Guo S, et al. InAlN\/GaN HEMTs with AlGaN back barriers. IEEE Electron Device Lett, 2011, 32: 617\u2013619","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR23","doi-asserted-by":"publisher","first-page":"892","DOI":"10.1109\/LED.2011.2147753","volume":"32","author":"R Wang","year":"2011","unstructured":"Wang R, Li G, Laboutin O, et al. 210-GHz InAlN\/GaN HEMTs with dielectric-free passivation. IEEE Electron Device Lett, 2011, 32: 892\u2013894","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR24","doi-asserted-by":"publisher","first-page":"1383","DOI":"10.1109\/LED.2010.2072771","volume":"31","author":"R Wang","year":"2010","unstructured":"Wang R, Saunier P, Xing X, et al. Gate-recessed enhancement-mode InAlN\/AlN\/GaN HEMTs with 1.9-A\/mm drain current density and 800-mS\/mm transconductance. IEEE Electron Device Lett, 2010, 31: 1383\u20131385","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR25","doi-asserted-by":"publisher","first-page":"253519","DOI":"10.1063\/1.4773244","volume":"101","author":"S Ganguly","year":"2012","unstructured":"Ganguly S, Konar A, Hu Z, et al. Polarization effects on gate leakage in InAlN\/AlN\/GaN high-electron-mobility transistors. Appl Phys Lett, 2012, 101: 253519","journal-title":"Appl Phys Lett"},{"key":"4572_CR26","doi-asserted-by":"publisher","first-page":"1293","DOI":"10.1109\/LED.2019.2923085","volume":"40","author":"A Hickman","year":"2019","unstructured":"Hickman A, Chaudhuri R, Bader S J, et al. High breakdown voltage in RF AlN\/GaN\/AlN quantum well HEMTs. IEEE Electron Device Lett, 2019, 40: 1293\u20131296","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR27","doi-asserted-by":"publisher","first-page":"163503","DOI":"10.1063\/1.4934185","volume":"107","author":"B Hou","year":"2015","unstructured":"Hou B, Ma X H, Chen W W, et al. Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors. Appl Phys Lett, 2015, 107: 163503","journal-title":"Appl Phys Lett"},{"key":"4572_CR28","doi-asserted-by":"publisher","first-page":"1880","DOI":"10.1063\/1.122312","volume":"73","author":"E T Yu","year":"1998","unstructured":"Yu E T, Dang X Z, Yu L S, et al. Schottky barrier engineering in III-V nitrides via the piezoelectric effect. Appl Phys Lett, 1998, 73: 1880\u20131882","journal-title":"Appl Phys Lett"},{"key":"4572_CR29","doi-asserted-by":"publisher","first-page":"173506","DOI":"10.1063\/1.2730751","volume":"90","author":"S L Selvaraj","year":"2007","unstructured":"Selvaraj S L, Ito T, Terada Y, et al. AlN\/AlGaN\/GaN metal-insulator-semiconductor high-electron-mobility transistor on 4 in. silicon substrate for high breakdown characteristics. Appl Phys Lett, 2007, 90: 173506","journal-title":"Appl Phys Lett"},{"key":"4572_CR30","volume-title":"Proceedings of IEEE International Electron Devices Meeting (IEDM)","author":"R Wang","year":"2013","unstructured":"Wang R, Li G, Guo J et al. Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2013"},{"key":"4572_CR31","doi-asserted-by":"publisher","first-page":"432","DOI":"10.1109\/LED.2013.2241388","volume":"34","author":"M Jurkovic","year":"2013","unstructured":"Jurkovic M, Gregusova D, Palankovski V, et al. Schottky-barrier normally off GaN\/InAlN\/AlN\/GaN HEMT with selectively etched access region. IEEE Electron Device Lett, 2013, 34: 432\u2013434","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR32","doi-asserted-by":"publisher","first-page":"1700406","DOI":"10.1002\/pssb.201700406","volume":"255","author":"M Charles","year":"2018","unstructured":"Charles M, Baines Y, Bouis R, et al. The characterization and optimization of GaN cap layers and SiN cap layers on AlGaN\/GaN HEMT structures grown on 200 mm GaN on silicon. Phys Status Solidi, 2018, 255: 1700406","journal-title":"Phys Status Solidi"},{"key":"4572_CR33","doi-asserted-by":"publisher","first-page":"3091","DOI":"10.1109\/TED.2013.2262136","volume":"60","author":"S Tirelli","year":"2013","unstructured":"Tirelli S, Lugani L, Marti D, et al. AlInN-based HEMTs for large-signal operation at 40 GHz. IEEE Trans Electron Devices, 2013, 60: 3091\u20133098","journal-title":"IEEE Trans Electron Devices"},{"key":"4572_CR34","doi-asserted-by":"publisher","first-page":"17","DOI":"10.1109\/LED.2014.2367093","volume":"36","author":"D Marti","year":"2015","unstructured":"Marti D, Tirelli S, Teppati V, et al. 94-GHz large-signal operation of AlInN\/GaN high-electron-mobility transistors on silicon with regrown ohmic contacts. IEEE Electron Device Lett, 2015, 36: 17\u201319","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR35","doi-asserted-by":"publisher","first-page":"161699","DOI":"10.1016\/j.apsusc.2024.161699","volume":"682","author":"M Jia","year":"2025","unstructured":"Jia M, Hou B, Yang L, et al. Improved p-GaN\/AlGaN\/GaN HEMTs with magnetronsputtered AlN cap layer. Appl Surf Sci, 2025, 682: 161699","journal-title":"Appl Surf Sci"},{"key":"4572_CR36","doi-asserted-by":"publisher","first-page":"5553","DOI":"10.1109\/TED.2021.3111140","volume":"68","author":"S Wu","year":"2021","unstructured":"Wu S, Mi M, Zhang M, et al. A high RF-performance AlGaN\/GaN HEMT with ultrathin barrier and stressor in situ SiN. IEEE Trans Electron Devices, 2021, 68: 5553\u20135558","journal-title":"IEEE Trans Electron Devices"},{"key":"4572_CR37","doi-asserted-by":"publisher","first-page":"365","DOI":"10.1109\/LED.2024.3524540","volume":"46","author":"S Li","year":"2025","unstructured":"Li S, Wu M, Yang L, et al. 15.1 W\/mm power density GaN-on-GaN HEMT with high-gradient stepped-C doped buffer. IEEE Electron Device Lett, 2025, 46: 365\u2013368","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR38","doi-asserted-by":"publisher","first-page":"202401","DOI":"10.1007\/s11432-021-3359-y","volume":"65","author":"S Y Liu","year":"2022","unstructured":"Liu S Y, Ma X H, Zhu J J, et al. Improved transport properties and mechanism in recessed-gate InAlN\/GaN HEMTs using a self-limited surface restoration method. Sci China Inf Sci, 2022, 65: 202401","journal-title":"Sci China Inf Sci"},{"key":"4572_CR39","doi-asserted-by":"publisher","first-page":"424","DOI":"10.1109\/TED.2022.3228495","volume":"70","author":"Y Wu","year":"2023","unstructured":"Wu Y, Liu S, Zhang J, et al. Novel in-situ AlN\/p-GaN gate HEMTs with threshold voltage of 3.9 V and maximum applicable gate voltage of 12.1 V. IEEE Trans Electron Devices, 2023, 70: 424\u2013428","journal-title":"IEEE Trans Electron Devices"},{"key":"4572_CR40","doi-asserted-by":"publisher","first-page":"104001","DOI":"10.7567\/1882-0786\/ab3e29","volume":"12","author":"P Cui","year":"2019","unstructured":"Cui P, Mercante A, Lin G, et al. High-performance InAlN\/GaN HEMTs on silicon substrate with high ft \u00d7 Lg. Appl Phys Express, 2019, 12: 104001","journal-title":"Appl Phys Express"},{"key":"4572_CR41","doi-asserted-by":"publisher","first-page":"235","DOI":"10.1109\/LED.2015.2394455","volume":"36","author":"A Malmros","year":"2015","unstructured":"Malmros A, Gamarra P, Di Forte-Poisson M A, et al. Evaluation of thermal versus plasma-assisted ALD Al2O3 as passivation for InAlN\/AlN\/GaN HEMTs. IEEE Electron Device Lett, 2015, 36: 235\u2013237","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR42","doi-asserted-by":"publisher","first-page":"994","DOI":"10.1109\/TED.2021.3049316","volume":"68","author":"P Cui","year":"2021","unstructured":"Cui P, Jia M, Chen H, et al. InAlN\/GaN HEMT on Si with fmax = 270 GHz. IEEE Trans Electron Devices, 2021, 68: 994\u2013999","journal-title":"IEEE Trans Electron Devices"},{"key":"4572_CR43","doi-asserted-by":"publisher","first-page":"2926","DOI":"10.1109\/TED.2006.885679","volume":"53","author":"Y C Choi","year":"2006","unstructured":"Choi Y C, Pophristic M, Cha H Y, et al. The effect of an Fe-doped GaN buffer on off-state breakdown characteristics in AlGaN\/GaN HEMTs on Si substrate. IEEE Trans Electron Devices, 2006, 53: 2926\u20132931","journal-title":"IEEE Trans Electron Devices"},{"key":"4572_CR44","volume-title":"Proceedings of International Electron Devices Meeting (IEDM)","author":"M Wu","year":"2022","unstructured":"Wu M, Zhang M, Yang L et al. First demonstration of state-of-the-art GaN HEMTs for power and RF applications on a unified platform with free-standing GaN substrate and Fe\/C co-doped buffer. In: Proceedings of International Electron Devices Meeting (IEDM), 2022"},{"key":"4572_CR45","doi-asserted-by":"publisher","first-page":"689","DOI":"10.1109\/LED.2020.2984727","volume":"41","author":"L Li","year":"2020","unstructured":"Li L, Nomoto K, Pan M, et al. GaN HEMTs on Si with regrown contacts and cutoff\/maximum oscillation frequencies of 250\/204 GHz. IEEE Electron Device Lett, 2020, 41: 689\u2013692","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR46","doi-asserted-by":"publisher","first-page":"756","DOI":"10.1109\/JEDS.2021.3103847","volume":"9","author":"Y Zhou","year":"2021","unstructured":"Zhou Y, Zhu J, Mi M, et al. Analysis of low voltage RF power capability on AlGaN\/GaN and InAlN\/GaN HEMTs for terminal applications. IEEE J Electron Devices Soc, 2021, 9: 756\u2013762","journal-title":"IEEE J Electron Devices Soc"},{"key":"4572_CR47","doi-asserted-by":"publisher","first-page":"442","DOI":"10.1109\/LED.2015.2409264","volume":"36","author":"D Xu","year":"2015","unstructured":"Xu D, Chu K K, Diaz J A, et al. 0.1-\u00b5m atomic layer deposition Al2O3 passivated InAlN\/GaN high electron-mobility transistors for E-band power amplifiers. IEEE Electron Device Lett, 2015, 36: 442\u2013444","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR48","doi-asserted-by":"publisher","first-page":"057307","DOI":"10.1088\/1674-1056\/ab821e","volume":"29","author":"M Mi","year":"2020","unstructured":"Mi M, Zhang M, Wu S, et al. High performance InAlN\/GaN high electron mobility transistors for low voltage applications*. Chin Phys B, 2020, 29: 057307","journal-title":"Chin Phys B"},{"key":"4572_CR49","doi-asserted-by":"publisher","first-page":"126506","DOI":"10.7567\/1882-0786\/ab56e2","volume":"12","author":"H Xie","year":"2019","unstructured":"Xie H, Liu Z, Gao Y, et al. Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency fT of 310 GHz. Appl Phys Express, 2019, 12: 126506","journal-title":"Appl Phys Express"},{"key":"4572_CR50","doi-asserted-by":"publisher","first-page":"741","DOI":"10.1109\/LED.2013.2257657","volume":"34","author":"M L Schuette","year":"2013","unstructured":"Schuette M L, Ketterson A, Song B, et al. Gate-recessed integrated E\/D GaN HEMT technology with fT\/fmax >300 GHz. IEEE Electron Device Lett, 2013, 34: 741\u2013743","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR51","doi-asserted-by":"publisher","first-page":"2675","DOI":"10.1109\/TED.2015.2439699","volume":"62","author":"C W Tsou","year":"2015","unstructured":"Tsou C W, Lin C Y, Lian Y W, et al. 101-GHz InAlN\/GaN HEMTs on silicon with high Johnson\u2019s figure-of-merit. IEEE Trans Electron Devices, 2015, 62: 2675\u20132678","journal-title":"IEEE Trans Electron Devices"},{"key":"4572_CR52","doi-asserted-by":"publisher","first-page":"1537","DOI":"10.1109\/LED.2011.2166949","volume":"32","author":"F Lecourt","year":"2011","unstructured":"Lecourt F, Ketteniss N, Behmenburg H, et al. InAlN\/GaN HEMTs on sapphire substrate with 2.9-W\/mm output power density at 18 GHz. IEEE Electron Device Lett, 2011, 32: 1537\u20131539","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR53","doi-asserted-by":"publisher","first-page":"988","DOI":"10.1109\/LED.2012.2196751","volume":"33","author":"Y Yue","year":"2012","unstructured":"Yue Y, Hu Z, Guo J, et al. InAlN\/AlN\/GaN HEMTs with regrown ohmic contacts and fT of 370 GHz. IEEE Electron Device Lett, 2012, 33: 988\u2013990","journal-title":"IEEE Electron Device Lett"},{"key":"4572_CR54","first-page":"1","volume-title":"Proceedings of IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","author":"G Formicone","year":"2016","unstructured":"Formicone G, Burger J, Custer J. 150 V-bias RF GaN for 1 kW UHF radar amplifiers. In: Proceedings of IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016. 1\u20134"},{"key":"4572_CR55","volume-title":"Proceedings of IEEE International Electron Devices Meeting (IEDM)","author":"S Nakajima","year":"2018","unstructured":"Nakajima S. GaN HEMTs for 5G base station applications. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2018"},{"key":"4572_CR56","first-page":"429","volume-title":"Proceedings of IEEE International Reliability Physics Symposium (IRPS)","author":"J L Jimenez","year":"2008","unstructured":"Jimenez J L, Chowdhury U. X-band GaN FET reliability. In: Proceedings of IEEE International Reliability Physics Symposium (IRPS), 2008. 429\u2013435"},{"key":"4572_CR57","doi-asserted-by":"publisher","first-page":"77","DOI":"10.1109\/LED.2015.2502253","volume":"37","author":"X Zheng","year":"2016","unstructured":"Zheng X, Guidry M, Li H, et al. N-polar GaN MIS-HEMTs on sapphire with high combination of power gain cutoff frequency and three-terminal breakdown voltage. IEEE Electron Device Lett, 2016, 37: 77\u201380","journal-title":"IEEE Electron Device Lett"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-025-4572-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-025-4572-5","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-025-4572-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,1,24]],"date-time":"2026-01-24T05:05:10Z","timestamp":1769231110000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-025-4572-5"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,1,14]]},"references-count":57,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2026,3]]}},"alternative-id":["4572"],"URL":"https:\/\/doi.org\/10.1007\/s11432-025-4572-5","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,1,14]]},"assertion":[{"value":"15 March 2025","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"27 June 2025","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"27 August 2025","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"14 January 2026","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"132403"}}