{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,6,21]],"date-time":"2025-06-21T11:28:01Z","timestamp":1750505281678,"version":"3.37.3"},"reference-count":36,"publisher":"Springer Science and Business Media LLC","issue":"3","license":[{"start":{"date-parts":[[2022,6,8]],"date-time":"2022-06-08T00:00:00Z","timestamp":1654646400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springer.com\/tdm"},{"start":{"date-parts":[[2022,6,8]],"date-time":"2022-06-08T00:00:00Z","timestamp":1654646400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["CCF Trans. HPC"],"published-print":{"date-parts":[[2022,9]]},"DOI":"10.1007\/s42514-022-00107-x","type":"journal-article","created":{"date-parts":[[2022,6,8]],"date-time":"2022-06-08T09:05:50Z","timestamp":1654679150000},"page":"281-301","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["Stop unnecessary refreshing: extending 3D NAND flash lifetime with ORBER"],"prefix":"10.1007","volume":"4","author":[{"given":"Min","family":"Ye","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4579-4268","authenticated-orcid":false,"given":"Qiao","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Congming","family":"Gao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shun","family":"Deng","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tei-Wei","family":"Kuo","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chun Jason","family":"Xue","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2022,6,8]]},"reference":[{"key":"107_CR1","doi-asserted-by":"crossref","unstructured":"Cai, Y., Haratsch, E.F., Mutlu, O., Mai, K.: Threshold voltage distribution in mlc nand flash memory: characterization, analysis, and modeling. In: 2013 Design, Automation & Test in Europe Conference & Exhibition (DATE), pp. 1285\u20131290, IEEE (2013)","DOI":"10.7873\/DATE.2013.266"},{"key":"107_CR2","doi-asserted-by":"crossref","unstructured":"Cai, Y., Luo, Y., Haratsch, E.F., Mai, K., Mutlu, O.: Data retention in MLC NAND flash memory: Characterization, optimization, and recovery. In: 2015 IEEE 21st International Symposium on High Performance Computer Architecture (HPCA), pp. 551\u2013563, IEEE (2015)","DOI":"10.1109\/HPCA.2015.7056062"},{"key":"107_CR3","doi-asserted-by":"crossref","unstructured":"Cai, Y., Ghose, S., Haratsch, E.F., Luo, Y., Mutlu, O.: Errors in flash-memory-based solid-state drives: analysis, mitigation, and recovery. arXiv preprint arXiv:1711.11427 (2017)","DOI":"10.1007\/978-981-13-0599-3_9"},{"key":"107_CR4","unstructured":"Cai, Y., Luo, Y., Haratsch, E.F., Mai, K., Ghose, S., Mutlu, O.: Experimental characterization, optimization, and recovery of data retention errors in mlc nand flash memory. arXiv preprint arXiv:1805.02819 (2018)"},{"key":"107_CR5","first-page":"1","volume":"99","author":"S-H Chen","year":"2018","unstructured":"Chen, S.-H., Chen, Y.-T., Chang, Y.-H., Wei, H.-W., Shih, W.-K.: A progressive performance boosting strategy for 3-D charge-trap NAND flash. IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 99, 1\u201313 (2018)","journal-title":"IEEE Trans. Very Large Scale Integr. (VLSI) Syst."},{"issue":"1","key":"107_CR6","doi-asserted-by":"publisher","first-page":"83","DOI":"10.1109\/TC.2018.2858771","volume":"68","author":"Y Di","year":"2018","unstructured":"Di, Y., Shi, L., Gao, C., Li, Q., Xue, C.J., Wu, K.: Minimizing retention induced refresh through exploiting process variation of flash memory. IEEE Trans. Comput. 68(1), 83\u201398 (2018)","journal-title":"IEEE Trans. Comput."},{"key":"107_CR7","doi-asserted-by":"crossref","unstructured":"Du, Y., Li, Q., Shi, L., Zou, D., Jin, H., Xue, C.J.: Reducing ldpc soft sensing latency by lightweight data refresh for flash read performance improvement. In: 2017 54th ACM\/EDAC\/IEEE Design Automation Conference (DAC), pp. 1\u20136, IEEE (2017)","DOI":"10.1145\/3061639.3062309"},{"key":"107_CR8","doi-asserted-by":"crossref","unstructured":"Du, P.-Y., Lue, H.-T., Hsu, T.-H., Hsieh, C.-C., Chen, W.-C., Chang, K.-P., Wang, K.-C., Lu, C.-Y.: Read disturb evaluations of 3d nand flash for highly read-intensive edge-computing inference device for artificial intelligence applications. In: 2019 IEEE 11th International Memory Workshop (IMW), pp. 1\u20134, IEEE (2019)","DOI":"10.1109\/IMW.2019.8739755"},{"key":"107_CR9","doi-asserted-by":"crossref","unstructured":"Gao, C., Ye, M., Li, Q., Xue, C.J., Zhang, Y., Shi, L., Yang, J.: Constructing large, durable and fast ssd system via reprogramming 3d tlc flash memory. In: Proceedings of the 52nd Annual IEEE\/ACM International Symposium on Microarchitecture, pp. 493\u2013505 (2019)","DOI":"10.1145\/3352460.3358323"},{"key":"107_CR10","doi-asserted-by":"crossref","unstructured":"Grupp, L.M., Caulfield, A.M., Coburn, J., Swanson, S., Yaakobi, E., Siegel, P.H., Wolf, J.K.: Characterizing flash memory: anomalies, observations, and applications. In: Proceedings of the 42nd Annual IEEE\/ACM International Symposium on Microarchitecture, pp. 24\u201333 (2009)","DOI":"10.1145\/1669112.1669118"},{"issue":"4","key":"107_CR11","doi-asserted-by":"publisher","first-page":"1433","DOI":"10.1109\/TVLSI.2016.2642055","volume":"25","author":"J Guo","year":"2017","unstructured":"Guo, J., Wang, D., Shao, Z., Chen, Y.: Data-pattern-aware error prevention technique to improve system reliability. IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 25(4), 1433\u20131443 (2017)","journal-title":"IEEE Trans. Very Large Scale Integr. (VLSI) Syst."},{"issue":"3","key":"107_CR12","doi-asserted-by":"publisher","first-page":"596","DOI":"10.1109\/TDMR.2020.3012430","volume":"20","author":"MM Hasan","year":"2020","unstructured":"Hasan, M.M., Ray, B.: Reliability of nand flash memory as a weight storage device of artificial neural network. IEEE Trans. Device Mater. Reliab. 20(3), 596\u2013603 (2020)","journal-title":"IEEE Trans. Device Mater. Reliab."},{"key":"107_CR13","doi-asserted-by":"crossref","unstructured":"Hu, Y., Jiang, H., Feng, D., Tian, L., Luo, H., Zhang, S.: Performance impact and interplay of ssd parallelism through advanced commands, allocation strategy and data granularity. In: Proceedings of the International Conference on Supercomputing, pp. 96\u2013107 (2011)","DOI":"10.1145\/1995896.1995912"},{"key":"107_CR14","doi-asserted-by":"crossref","unstructured":"Huh, H., Cho, W., Lee, J., Noh, Y., Park, Y., Ok, S., Kim, J., Cho, K., Lee, H., Kim, G., et al.: 13.2 a 1tb 4b\/cell 96-stacked-wl 3d nand flash memory with 30mb\/s program throughput using peripheral circuit under memory cell array technique. In: 2020 IEEE International Solid-State Circuits Conference-(ISSCC), pp. 220\u2013221, IEEE (2020)","DOI":"10.1109\/ISSCC19947.2020.9063117"},{"issue":"6","key":"107_CR15","doi-asserted-by":"publisher","first-page":"1491","DOI":"10.1109\/JSSC.2015.2413841","volume":"50","author":"C-H Hung","year":"2015","unstructured":"Hung, C.-H., Chang, M.-F., Yang, Y.-S., Kuo, Y.-J., Lai, T.-N., Shen, S.-J., Hsu, J.-Y., Hung, S.-N., Lue, H.-T., Shih, Y.-H., et al.: Layer-aware program-and-read schemes for 3d stackable vertical-gate be-sonos nand flash against cross-layer process variations. IEEE J. Solid-State Circ. 50(6), 1491\u20131501 (2015)","journal-title":"IEEE J. Solid-State Circ."},{"key":"107_CR16","unstructured":"Hynix, S.: 128-layer NAND Flash. https:\/\/bit-tech.net\/news\/tech\/storage\/sk-hynix-achieves-worlds-first-128-layer-nand-flash-based-consumer-ssd\/1\/ (August 19, 2020)"},{"key":"107_CR17","unstructured":"Jimenez, X., Novo, D., Ienne, P.: Wear unleveling: improving nand flash lifetime by balancing page endurance. In: Proceedings of the 12th USENIX Conference on File and Storage Technologies (2014)"},{"issue":"1","key":"107_CR18","doi-asserted-by":"publisher","first-page":"210","DOI":"10.1109\/JSSC.2016.2604297","volume":"52","author":"D Kang","year":"2017","unstructured":"Kang, D., Jeong, W., Kim, C., Kim, D.-H., Cho, Y.S., Kang, K.-T., Ryu, J., Kang, K.-M., Lee, S., Kim, W., et al.: 256 Gb 3 b\/cell V-NAND flash memory with 48 stacked wl layers. IEEE J. Solid-State Circ. 52(1), 210\u2013217 (2017)","journal-title":"IEEE J. Solid-State Circ."},{"key":"107_CR19","unstructured":"Kim, B.S., Choi, J., Min, S.L.: Design tradeoffs for SSD reliability. In: 17th USENIX Conference on File and Storage Technologies (FAST),pp. 281\u2013294. USENIX Association, Boston, MA (2019)"},{"key":"107_CR20","doi-asserted-by":"crossref","unstructured":"Lee, S., Lee, J.-y., Park, I.-h., Park, J., Yun, S.-w., Kim, M.-s., Lee, J.-h., Kim, M., Lee, K., Kim, T., et al.: 7.5 A 128Gb 2b\/cell NAND flash memory in 14nm technology with tprog= 640 \u03bcs and 800MB\/s I\/O rate. In: 2016 IEEE International Solid-State Circuits Conference (ISSCC), pp. 138\u2013139 (2016). IEEE","DOI":"10.1109\/ISSCC.2016.7417945"},{"key":"107_CR21","doi-asserted-by":"publisher","first-page":"475","DOI":"10.1109\/TC.2019.2959318","volume":"69","author":"Q Li","year":"2019","unstructured":"Li, Q., Shi, L., Cui, Y., Xue, C.J.: Exploiting asymmetric errors for ldpc decoding optimization on 3d nand flash memory. IEEE Trans. Comput. 69, 475\u2013488 (2019)","journal-title":"IEEE Trans. Comput."},{"key":"107_CR22","doi-asserted-by":"crossref","unstructured":"Li, Q., Ye, M., Cui, Y., Shi, L., Li, X., Kuo, T.-W., Xue, C.J.: Shaving retries with sentinels for fast read over high-density 3d flash. In: 2020 53rd Annual IEEE\/ACM International Symposium on Microarchitecture (MICRO), pp. 483\u2013495, IEEE (2020)","DOI":"10.1109\/MICRO50266.2020.00048"},{"key":"107_CR23","doi-asserted-by":"crossref","unstructured":"Lin, W., Chen, J., Zhang, X., Cheng, Z.: Improving 3d nand flash memory read performance by modeling the read offset. In: 2019 IEEE 19th International Conference on Communication Technology (ICCT), pp. 1472\u20131476, IEEE (2019)","DOI":"10.1109\/ICCT46805.2019.8947110"},{"key":"107_CR24","doi-asserted-by":"crossref","unstructured":"Luo, Y., Cai, Y., Ghose, S., Choi, J., Mutlu, O.: Warm: Improving nand flash memory lifetime with write-hotness aware retention management. In: 2015 31st Symposium on Mass Storage Systems and Technologies (MSST), pp. 1\u201314, IEEE (2015)","DOI":"10.1109\/MSST.2015.7208284"},{"key":"107_CR25","doi-asserted-by":"crossref","unstructured":"Luo, Y., Ghose, S., Cai, Y., Haratsch, E.F., Mutlu, O.: Heatwatch: improving 3d nand flash memory device reliability by exploiting self-recovery and temperature awareness. In: 2018 IEEE International Symposium on High Performance Computer Architecture (HPCA), pp. 504\u2013517 (2018a)","DOI":"10.1109\/HPCA.2018.00050"},{"key":"107_CR26","doi-asserted-by":"crossref","unstructured":"Luo, Y., Ghose, S., Cai, Y., Haratsch, E., Mutlu, O.: Improving 3d nand flash memory lifetime by tolerating early retention loss and process variation. In: Abstracts of the 2018 ACM International Conference on Measurement and Modeling of Computer Systems, pp. 106 (2018b)","DOI":"10.1145\/3219617.3219659"},{"key":"107_CR27","doi-asserted-by":"publisher","first-page":"44696","DOI":"10.1109\/ACCESS.2019.2909567","volume":"7","author":"R Ma","year":"2019","unstructured":"Ma, R., Wu, F., Zhang, M., Lu, Z., Wan, J., Xie, C.: Rber-aware lifetime prediction scheme for 3d-tlc nand flash memory. IEEE Access 7, 44696\u201344708 (2019)","journal-title":"IEEE Access"},{"key":"107_CR28","doi-asserted-by":"publisher","first-page":"4563","DOI":"10.1109\/TCAD.2020.2981025","volume":"39","author":"R Ma","year":"2020","unstructured":"Ma, R., Wu, F., Lu, Z., Zhong, W., Wu, Q., Wan, J., Xie, C.: Blockhammer: improving flash reliability by exploiting process variation aware proactive failure prediction. IEEE Trans. Comput.-Aided Des. Integr. Circ. Syst. 39, 4563\u20134567 (2020)","journal-title":"IEEE Trans. Comput.-Aided Des. Integr. Circ. Syst."},{"key":"107_CR29","doi-asserted-by":"crossref","unstructured":"Papandreou, N., Ioannou, N., Parnell, T., Pletka, R., Stanisavljevic, M., Stoica, R., Tomic, S., Pozidis, H.: Reliability of 3d nand flash memory with a focus on read voltage calibration from a system aspect. In: 2019 19th Non-Volatile Memory Technology Symposium (NVMTS), pp. 1\u20134 (2019). IEEE","DOI":"10.1109\/NVMTS47818.2019.8986221"},{"key":"107_CR30","unstructured":"Schroeder, R.L. Bianca, Merchant., A.: Flash reliability in production: the expected and the unexpected. In: 14th USENIX Conference on File and Storage Technologies (FAST 16), pp. 67\u201380 (2016)"},{"key":"107_CR31","doi-asserted-by":"crossref","unstructured":"Shi, X., Wu, F., Wang, S., Xie, C., Lu, Z.: Program error rate-based wear leveling for nand flash memory. In: 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), pp. 1241\u20131246 (2018). IEEE","DOI":"10.23919\/DATE.2018.8342205"},{"key":"107_CR32","doi-asserted-by":"crossref","unstructured":"Shim, Y., Kim, M., Chun, M., Park, J., Kim, Y., Kim, J.: Exploiting process similarity of 3d flash memory for high performance ssds. In: Proceedings of the 52nd Annual IEEE\/ACM International Symposium on Microarchitecture, pp. 211\u2013223 (2019)","DOI":"10.1145\/3352460.3358311"},{"key":"107_CR33","unstructured":"Tesla.: MCU1 flash memory analysis and failures. https:\/\/teslatap.com\/articles\/mcu1-flash-memory-analysis-and-failures\/ (July 6, 2020)"},{"issue":"2","key":"107_CR34","first-page":"16","volume":"14","author":"Q Xiong","year":"2018","unstructured":"Xiong, Q., Wu, F., Lu, Z., Zhu, Y., Zhou, Y., Chu, Y., Xie, C., Huang, P.: Characterizing 3d floating gate nand flash: observations, analyses, and implications. ACM Trans. Storage (TOS) 14(2), 16 (2018)","journal-title":"ACM Trans. Storage (TOS)"},{"key":"107_CR35","unstructured":"Xu, E., Zheng, M., Qin, F., Xu, Y., Wu, J.: Lessons and actions: What we learned from 10k ssd-related storage system failures. In: 2019 USENIX Annual Technical Conference (USENIX ATC 19), pp. 961\u2013976 (2019)"},{"key":"107_CR36","unstructured":"YEESTOR: YS9083XT\/YS9081XT SSD Platform. http:\/\/www.yeestor.com\/index-product-info-id-946-cid-33-pid-3-infopid-33.html (June 4, 2018)"}],"container-title":["CCF Transactions on High Performance Computing"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s42514-022-00107-x.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s42514-022-00107-x\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s42514-022-00107-x.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,10,10]],"date-time":"2022-10-10T15:52:18Z","timestamp":1665417138000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s42514-022-00107-x"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,6,8]]},"references-count":36,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2022,9]]}},"alternative-id":["107"],"URL":"https:\/\/doi.org\/10.1007\/s42514-022-00107-x","relation":{},"ISSN":["2524-4922","2524-4930"],"issn-type":[{"type":"print","value":"2524-4922"},{"type":"electronic","value":"2524-4930"}],"subject":[],"published":{"date-parts":[[2022,6,8]]},"assertion":[{"value":"6 December 2021","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"15 April 2022","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"8 June 2022","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}]}}