{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,23]],"date-time":"2026-10-23T19:12:56Z","timestamp":1792782776315,"version":"4.5.0"},"reference-count":29,"publisher":"Springer Science and Business Media LLC","issue":"11","license":[{"start":{"date-parts":[[2026,10,13]],"date-time":"2026-10-13T00:00:00Z","timestamp":1791849600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2026,10,13]],"date-time":"2026-10-13T00:00:00Z","timestamp":1791849600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"funder":[{"name":"Natural Science Foundation of Jiangsu Province of China","award":["BK20231316"],"award-info":[{"award-number":["BK20231316"]}]},{"name":"China Postdoctoral Science Foundation","award":["2024M752346"],"award-info":[{"award-number":["2024M752346"]}],"id":[{"id":"https:\/\/ror.org\/0426zh255","id-type":"ROR","asserted-by":"crossref"}]}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["J Mol Model"],"published-print":{"date-parts":[[2026,11]]},"DOI":"10.1007\/s00894-026-07006-w","type":"journal-article","created":{"date-parts":[[2026,10,13]],"date-time":"2026-10-13T08:05:04Z","timestamp":1791878704000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Stacking-sequence-dependent plasticity and subsurface damage evolution in nanometric cutting of hexagonal SiC"],"prefix":"10.1007","volume":"32","author":[{"given":"Binbin","family":"Meng","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2026,10,13]]},"reference":[{"key":"7006_CR1","doi-asserted-by":"publisher","first-page":"225","DOI":"10.1016\/j.jmapro.2024.01.040","volume":"112","author":"H Chen","year":"2024","unstructured":"Chen H, Wu Z, Hong B, Hang W, Zhang P, Cao X, Xu Q, Chen P, Yuan J, Lyu B, Lin HT (2024) Study on the affecting factors of material removal mechanism and damage behavior of shear rheological polishing of single crystal silicon carbide. J Manuf Process 112:225\u2013237. https:\/\/doi.org\/10.1016\/j.jmapro.2024.01.040","journal-title":"J Manuf Process"},{"key":"7006_CR2","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2025.109922","volume":"200","author":"S Fan","year":"2025","unstructured":"Fan S, Pan J, Li H, He J, Zhang T, Cai P, Yang P (2025) Molecular dynamics of 4H-SiC nano-grinding under dual abrasive particle coupling. Mater Sci Semicond Process 200:109922. https:\/\/doi.org\/10.1016\/j.mssp.2025.109922","journal-title":"Mater Sci Semicond Process"},{"key":"7006_CR3","doi-asserted-by":"publisher","DOI":"10.1016\/j.ijmachtools.2023.104063","volume":"191","author":"W Huang","year":"2023","unstructured":"Huang W, Yan J (2023) Mechanisms of tool-workpiece interaction in ultraprecision diamond turning of single-crystal SiC for curved microstructures. Int J Mach Tools Manuf 191:104063. https:\/\/doi.org\/10.1016\/j.ijmachtools.2023.104063","journal-title":"Int J Mach Tools Manuf"},{"issue":"2","key":"7006_CR4","doi-asserted-by":"publisher","DOI":"10.1088\/2631-7990\/ad207f","volume":"6","author":"C Li","year":"2024","unstructured":"Li C, Hu Y, Wei Z, Wu C, Peng Y, Zhang F, Geng Y (2024) Damage evolution and removal behaviors of GaN crystals involved in double-grits grinding. Int J Extrem Manuf 6(2):025103. https:\/\/doi.org\/10.1088\/2631-7990\/ad207f","journal-title":"Int J Extrem Manuf"},{"key":"7006_CR5","doi-asserted-by":"publisher","DOI":"10.1016\/j.ijmecsci.2025.109934","volume":"286","author":"C Li","year":"2025","unstructured":"Li C, Liu G, Gao C, Yang R, Zakharov O, Hu Y, Yan Y, Geng Y (2025) Atomic-scale understanding of graphene oxide lubrication-assisted grinding of GaN crystals. Int J Mech Sci 286:109934. https:\/\/doi.org\/10.1016\/j.ijmecsci.2025.109934","journal-title":"Int J Mech Sci"},{"issue":"8","key":"7006_CR6","doi-asserted-by":"publisher","first-page":"935","DOI":"10.3390\/mi16080935","volume":"16","author":"J Xi","year":"2025","unstructured":"Xi J, Ban X, Hui Z, Ba W, Deng L, Qiu H (2025) Investigating surface morphology and subsurface damage evolution in nanoscratching of single-crystal 4H-SiC. Micromachines 16(8):935. https:\/\/doi.org\/10.3390\/mi16080935","journal-title":"Micromachines"},{"key":"7006_CR7","doi-asserted-by":"publisher","unstructured":"Tang, K., Ou, W., Mao, C., Liang, J., Zhang, M., Zhang, M., & Hu, Y. (2023). Material removal characteristics of single-crystal 4H-SiC based on varied-load nanoscratch tests. Chinese Journal of Mechanical Engineering, 36(1), 111. https:\/\/doi.org\/10.21203\/rs.3.rs-1915445\/v1","DOI":"10.21203\/rs.3.rs-1915445\/v1"},{"key":"7006_CR8","doi-asserted-by":"publisher","DOI":"10.1186\/s10033-023-00944-z","author":"K Tang","year":"2023","unstructured":"Tang K, Ou W, Mao C, Liang J, Zhang M, Zhang M, Hu Y (2023) Material removal characteristics of single-crystal 4H-SiC based on varied-load nanoscratch tests. Chin J Mech Eng. https:\/\/doi.org\/10.1186\/s10033-023-00944-z","journal-title":"Chin J Mech Eng"},{"key":"7006_CR9","doi-asserted-by":"publisher","DOI":"10.1016\/j.wear.2024.205343","volume":"546\u2013547","author":"Y Wang","year":"2024","unstructured":"Wang Y, Ding H, Wang N, Huang Y, Yu Y, Huang H, Duan N (2024) Effect of dislocation defects on the nano-scratching process of 4H\u2013SiC. Wear 546\u2013547:205343. https:\/\/doi.org\/10.1016\/j.wear.2024.205343","journal-title":"Wear"},{"key":"7006_CR10","doi-asserted-by":"publisher","first-page":"858","DOI":"10.1016\/j.precisioneng.2021.07.011","volume":"72","author":"T Ai","year":"2021","unstructured":"Ai T, Liu J, Qiu H, Wang X (2021) Removal behavior and performance analysis of defective silicon carbide in nano-grinding. Precis Eng 72:858\u2013869. https:\/\/doi.org\/10.1016\/j.precisioneng.2021.07.011","journal-title":"Precis Eng"},{"key":"7006_CR11","doi-asserted-by":"publisher","DOI":"10.1016\/j.triboint.2019.106136","volume":"145","author":"P Zhou","year":"2020","unstructured":"Zhou P, Sun T, Shi X, Li J, Zhu Y, Wang Z (2020) Atomic-scale study of vacancy defects in SiC affecting on removal mechanisms during nano-abrasion process. Tribol Int 145:106136. https:\/\/doi.org\/10.1016\/j.triboint.2019.106136","journal-title":"Tribol Int"},{"issue":"4","key":"7006_CR12","doi-asserted-by":"publisher","DOI":"10.1088\/2631-7990\/abc26c","volume":"2","author":"Z Tian","year":"2020","unstructured":"Tian Z, Chen X, Xu X (2020) Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates. Int J Extreme Manuf 2(4):045104. https:\/\/doi.org\/10.1088\/2631-7990\/abc26c","journal-title":"Int J Extreme Manuf"},{"key":"7006_CR13","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2024.108382","volume":"177","author":"J Li","year":"2024","unstructured":"Li J, Zhao H, Gao X, He L, Zhou D (2024) Material removal characteristic of single abrasive scratching 4H\u2013SiC crystal with different crystal surface. Mater Sci Semicond Process 177:108382. https:\/\/doi.org\/10.1016\/j.mssp.2024.108382","journal-title":"Mater Sci Semicond Process"},{"key":"7006_CR14","doi-asserted-by":"publisher","DOI":"10.1016\/j.commatsci.2019.109476","volume":"174","author":"B Liu","year":"2020","unstructured":"Liu B, Xu Z, Wang Y, Gao X, Kong R (2020) Effect of ion implantation on material removal mechanism of 6H-SiC in nano-cutting: a molecular dynamics study. Comput Mater Sci 174:109476. https:\/\/doi.org\/10.1016\/j.commatsci.2019.109476","journal-title":"Comput Mater Sci"},{"key":"7006_CR15","doi-asserted-by":"publisher","DOI":"10.1016\/j.triboint.2023.108639","volume":"186","author":"TT Do","year":"2023","unstructured":"Do TT, Fang TH (2023) Deep insights into interaction behaviour and material removal of \u03b2-SiC wafer in nanoscale polishing. Tribol Int 186:108639. https:\/\/doi.org\/10.1016\/j.triboint.2023.108639","journal-title":"Tribol Int"},{"issue":"4","key":"7006_CR16","doi-asserted-by":"publisher","first-page":"640","DOI":"10.3390\/mi13040640","volume":"13","author":"W Lin","year":"2022","unstructured":"Lin W, Hu Z, Chen Y, Zhang Y, Yu Y, Xu X, Zhang J (2022) Comparison of vibration-assisted scratch characteristics of SiC polytypes (3C-, 4H- and 6H-SiC). Micromachines 13(4):640. https:\/\/doi.org\/10.3390\/mi13040640","journal-title":"Micromachines"},{"key":"7006_CR17","doi-asserted-by":"publisher","DOI":"10.1016\/j.cpc.2021.108171","volume":"271","author":"AP Thompson","year":"2022","unstructured":"Thompson AP, Aktulga HM, Berger R, Bolintineanu DS, Brown WM, Crozier PS, in \u2019t Veld PJ, Kohlmeyer A, Moore SG, Nguyen TD, Shan R, Stevens MJ, Tranchida J, Trott C, Plimpton SJ (2022) LAMMPS-a flexible simulation tool for particle-based materials modeling at the atomic, meso, and continuum scales. Comput Phys Commun 271:108171. https:\/\/doi.org\/10.1016\/j.cpc.2021.108171","journal-title":"Comput Phys Commun"},{"issue":"2","key":"7006_CR18","doi-asserted-by":"publisher","first-page":"022015","DOI":"10.1088\/2631-7990\/ada218","volume":"7","author":"C Li","year":"2025","unstructured":"Li C, Wang K, Zakharov O, Cui H, Wu M, Zhao T, Yan Y, Geng Y (2025) Damage evolution mechanism and low-damage grinding technology of silicon carbide ceramics. Int J Extrem Manuf 7(2):022015. https:\/\/doi.org\/10.1088\/2631-7990\/ada218","journal-title":"Int J Extrem Manuf"},{"key":"7006_CR19","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2025.109838","volume":"199","author":"J Xi","year":"2025","unstructured":"Xi J, Ban X, Ba W, Hui Z, Deng L, Qiu H (2025) Molecular dynamics simulation of scratching parameters in diamond grit scratching single-crystal silicon carbide. Mater Sci Semicond Process 199:109838. https:\/\/doi.org\/10.1016\/j.mssp.2025.109838","journal-title":"Mater Sci Semicond Process"},{"key":"7006_CR20","doi-asserted-by":"publisher","first-page":"522","DOI":"10.1016\/j.jmapro.2026.03.023","volume":"165","author":"UK Baidh","year":"2026","unstructured":"Baidh UK, Jha S, Ghosh G, Banerjee A, Deka N (2026) Atomistic insights into burr formation and thermo-mechanical behavior in nano-scratching of 3C-SiC. J Manuf Process 165:522\u2013545. https:\/\/doi.org\/10.1016\/j.jmapro.2026.03.023","journal-title":"J Manuf Process"},{"issue":"10","key":"7006_CR21","doi-asserted-by":"publisher","first-page":"11910","DOI":"10.1016\/j.ceramint.2018.03.195","volume":"44","author":"Y Liu","year":"2018","unstructured":"Liu Y, Li B, Kong L (2018) Molecular dynamics simulation of silicon carbide nanoscale material removal behavior. Ceram Int 44(10):11910\u201311913. https:\/\/doi.org\/10.1016\/j.ceramint.2018.03.195","journal-title":"Ceram Int"},{"key":"7006_CR22","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2022.152944","volume":"588","author":"S Zhang","year":"2022","unstructured":"Zhang S, Cheng X, Chen J (2022) Surface deformation, phase transition and dislocation mechanisms of single crystalline 6H-SiC in oblique nano-cutting. Appl Surf Sci 588:152944. https:\/\/doi.org\/10.1016\/j.apsusc.2022.152944","journal-title":"Appl Surf Sci"},{"issue":"7","key":"7006_CR23","doi-asserted-by":"publisher","first-page":"1044","DOI":"10.3390\/cryst13071044","volume":"13","author":"L Liang","year":"2023","unstructured":"Liang L, Li S, Chai P, Lan K, Yu R (2023) Molecular dynamics simulation of single-crystal 4H-SiC nano scratching with different scratching directions of the tool. Crystals 13(7):1044. https:\/\/doi.org\/10.3390\/cryst13071044","journal-title":"Crystals"},{"issue":"5","key":"7006_CR24","doi-asserted-by":"publisher","first-page":"5623","DOI":"10.1016\/j.ceramint.2019.11.006","volume":"46","author":"VT Nguyen","year":"2020","unstructured":"Nguyen VT, Fang TH (2020) Material removal and interactions between an abrasive and a SiC substrate: a molecular dynamics simulation study. Ceram Int 46(5):5623\u20135633. https:\/\/doi.org\/10.1016\/j.ceramint.2019.11.006","journal-title":"Ceram Int"},{"issue":"3","key":"7006_CR25","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.71.035211","volume":"71","author":"P Erhart","year":"2005","unstructured":"Erhart P, Albe K (2005) Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide. Phys Rev B 71(3):035211. https:\/\/doi.org\/10.1103\/PhysRevB.71.035211","journal-title":"Phys Rev B"},{"issue":"1","key":"7006_CR26","doi-asserted-by":"publisher","DOI":"10.1088\/0965-0393\/18\/1\/015012","volume":"18","author":"A Stukowski","year":"2009","unstructured":"Stukowski A (2009) Visualization and analysis of atomistic simulation data with OVITO\u2013the open visualization tool. Model Simul Mater Sci Eng 18(1):015012. https:\/\/doi.org\/10.1088\/0965-0393\/18\/1\/015012","journal-title":"Model Simul Mater Sci Eng"},{"issue":"2","key":"7006_CR27","doi-asserted-by":"publisher","first-page":"247","DOI":"10.1016\/0043-1648(81)90294-5","volume":"73","author":"OO Adewoye","year":"1981","unstructured":"Adewoye OO, Page TF (1981) Electron microscopy study of surface and subsurface friction damage in single-crystal SiC. Wear 73(2):247\u2013260. https:\/\/doi.org\/10.1016\/0043-1648(81)90294-5","journal-title":"Wear"},{"issue":"1","key":"7006_CR28","doi-asserted-by":"publisher","first-page":"64","DOI":"10.1002\/pssc.201200372","volume":"10","author":"JL Demenet","year":"2013","unstructured":"Demenet JL, Amer M, Tromas C, Eyidi D, Rabier J (2013) Dislocations in 4H\u2010and 3C\u2010SiC single crystals in the brittle regime. Phys Status Solidi C 10(1):64\u201367. https:\/\/doi.org\/10.1002\/pssc.201200372","journal-title":"Phys Status Solidi C"},{"issue":"49","key":"7006_CR29","doi-asserted-by":"publisher","first-page":"10319","DOI":"10.1088\/0953-8984\/12\/49\/335","volume":"12","author":"I Yonenaga","year":"2000","unstructured":"Yonenaga I, Hoshi T, Usui A (2000) High-temperature hardness of bulk single-crystal gallium nitride-in comparison with other wide-gap materials. J Phys Condens Matter 12(49):10319\u201310323. https:\/\/doi.org\/10.1088\/0953-8984\/12\/49\/335","journal-title":"J Phys Condens Matter"}],"container-title":["Journal of Molecular Modeling"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s00894-026-07006-w.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s00894-026-07006-w","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s00894-026-07006-w.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,13]],"date-time":"2026-10-13T19:01:43Z","timestamp":1791918103000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s00894-026-07006-w"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,13]]},"references-count":29,"journal-issue":{"issue":"11","published-print":{"date-parts":[[2026,11]]}},"alternative-id":["7006"],"URL":"https:\/\/doi.org\/10.1007\/s00894-026-07006-w","relation":{},"ISSN":["1610-2940","0948-5023"],"issn-type":[{"value":"1610-2940","type":"print"},{"value":"0948-5023","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,13]]},"assertion":[{"value":"23 August 2026","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"7 October 2026","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"13 October 2026","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.","order":1,"name":"Ethics","label":"Competing interest","group":{"name":"EthicsHeading","label":"Declarations"}}],"article-number":"412"}}