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However, this process currently faces a fundamental trade-off: Although high-temperature annealing enhances crystallinity, it also introduces severe sulfur and Sb\n                    <jats:sub>2<\/jats:sub>\n                    S\n                    <jats:sub>3<\/jats:sub>\n                    molecular escape, ultimately degrading device performance. To overcome this limitation, we propose a confined-space annealing (CSA) strategy that operates via a dual mechanism. Physical confinement generates a high local vapor pressure, which suppresses Sb\n                    <jats:sub>2<\/jats:sub>\n                    S\n                    <jats:sub>3<\/jats:sub>\n                    re-volatilization and enables recrystallization into large-grain films under atmospheric pressure. Controlled oxygen doping preferentially fills sulfur vacancy sites, suppresses interstitial Sb\n                    <jats:sub>i<\/jats:sub>\n                    defects, and promotes the self-assembly of Sb\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    nano-belts at grain boundaries, effectively blocking leakage paths. As a result, the CSA films exhibit a 60.9% reduction in V\n                    <jats:sub>S<\/jats:sub>\n                    defects and a 40.3% improvement in carrier collection efficiency compared to pristine films. Carbon-based devices fabricated using this approach achieve a power conversion efficiency of 7.17% (\n                    <jats:italic>V<\/jats:italic>\n                    <jats:sub>OC<\/jats:sub>\n                    \u2009=\u2009750\u00a0mV,\n                    <jats:italic>J<\/jats:italic>\n                    <jats:sub>SC<\/jats:sub>\n                    \u2009=\u200914.26\u00a0mA\u00a0cm\n                    <jats:sup>\u22122<\/jats:sup>\n                    , FF\u2009=\u200962.7%), which is the highest reported value for Sb\n                    <jats:sub>2<\/jats:sub>\n                    S\n                    <jats:sub>3<\/jats:sub>\n                    solar cells fabricated entirely in ambient atmosphere. This work not only offers a practical fabrication route under ambient conditions but also provides fundamental insights into defect passivation in chalcogenide photovoltaics.\n                  <\/jats:p>","DOI":"10.1007\/s40820-026-02193-w","type":"journal-article","created":{"date-parts":[[2026,5,8]],"date-time":"2026-05-08T06:39:57Z","timestamp":1778222397000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":12,"title":["Ambient Confined-Space Annealing for Crystallization Enhancement and Defect Passivation in Sb2S3 Thin-Film Solar Cells"],"prefix":"10.1007","volume":"18","author":[{"given":"Li-Mei","family":"Lin","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jie","family":"Huang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hu","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jin-Rui","family":"Cai","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shui-Yuan","family":"Chen","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jian-Min","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiao-Min","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Gui-Lin","family":"Chen","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2026,5,8]]},"reference":[{"issue":"25","key":"2193_CR1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202401931","volume":"36","author":"J He","year":"2024","unstructured":"J. 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