{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,22]],"date-time":"2025-03-22T04:14:52Z","timestamp":1742616892237,"version":"3.40.2"},"publisher-location":"Berlin, Heidelberg","reference-count":15,"publisher":"Springer Berlin Heidelberg","isbn-type":[{"type":"print","value":"9783642282546"},{"type":"electronic","value":"9783642282553"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012]]},"DOI":"10.1007\/978-3-642-28255-3_59","type":"book-chapter","created":{"date-parts":[[2012,2,22]],"date-time":"2012-02-22T14:39:25Z","timestamp":1329921565000},"page":"535-540","source":"Crossref","is-referenced-by-count":1,"title":["Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor"],"prefix":"10.1007","author":[{"given":"Paulo R. F.","family":"Rocha","sequence":"first","affiliation":[]},{"given":"Asal","family":"Kiazadeh","sequence":"additional","affiliation":[]},{"given":"Qian","family":"Chen","sequence":"additional","affiliation":[]},{"given":"Henrique L.","family":"Gomes","sequence":"additional","affiliation":[]}],"member":"297","reference":[{"key":"59_CR1","first-page":"28","volume":"5","author":"K.S. Kwork","year":"2002","unstructured":"Kwork, K.S., Ellenbogen, J.C.: Moletronics: Future electronics. Mater. Today\u00a05, 28\u201337 (2002)","journal-title":"Mater. Today"},{"key":"59_CR2","doi-asserted-by":"crossref","unstructured":"Zhuang, W.W., Pan, W., Ulrich, B.D., Lee, J.J., Stecker, L., Burmaster, A., Evans, D.R., Hsul, S.T., Tajiri, M., Shimaoka, A., Inoue, K., Naka, T., Awaya, N., Sakiyama, K., Wang, Y., Liu, S.Q., Wu, N.J., Ignatiev, A.: Novell colossal magnetroresistive thin film nonvolatile resistance random access memory (RRAM). IEDM Tech. Dig., 193\u2013196 (2002)","DOI":"10.1109\/IEDM.2002.1175811"},{"key":"59_CR3","unstructured":"Baek, I.G., Lee, M.S., Seo, S., Lee, M.J., Seo, D.H., Suh, D.-S., Park, J.C., Park, S.O., Kim, H.S., Yoo, I.K., Cung, U.-I., Moon, I.T.: Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses. Tech. Dig. IEDM, 597\u2013590 (2004)"},{"key":"59_CR4","doi-asserted-by":"publisher","first-page":"405","DOI":"10.1063\/1.90814","volume":"34","author":"R.S. Potember","year":"1979","unstructured":"Potember, R.S., Poehler, T.O., Cowan, D.O.: Electrical switching and memory phenomena in Cu-TCNQ thin film. Appl. Phys. Lett.\u00a034, 405\u2013407 (1979)","journal-title":"Appl. Phys. Lett."},{"key":"59_CR5","doi-asserted-by":"publisher","first-page":"63503","DOI":"10.1063\/1.2457342","volume":"90","author":"R. M\u00fcller","year":"2007","unstructured":"M\u00fcller, R., Naulaerts, R., Billen, J., Genoe, J., Heremans, P.: CuTCNQ resistive nonvolatile memories with a noble metal bottom electrode. Appl. Phys. Lett.\u00a090, 063503\u2013063503-3 (2007)","journal-title":"Appl. Phys. Lett."},{"key":"59_CR6","doi-asserted-by":"publisher","first-page":"1419","DOI":"10.1063\/1.1556555","volume":"82","author":"L. Ma","year":"2003","unstructured":"Ma, L., Pyo, S., Ouyang, J., Xu, Q., Yang, Y.: Nonvolatile electrical bistability of organic\/metal-cluster\/organic system. Appl. Phys. Lett.\u00a082, 1419\u20131422 (2003)","journal-title":"Appl. Phys. Lett."},{"key":"59_CR7","first-page":"77","volume-title":"Mathematical and Physical Sciences","author":"J.G. Simmons","year":"1967","unstructured":"Simmons, J.G., Verderber, R.R.: New Conduction and Reversible Memory Phenomena in Thin Insulating Films. In: Mathematical and Physical Sciences, pp. 77\u2013102. Proceedings of the Royal Society of London, London (1967)"},{"key":"59_CR8","doi-asserted-by":"publisher","first-page":"829","DOI":"10.1016\/j.orgel.2008.05.022","volume":"9","author":"F. Verbakel","year":"2008","unstructured":"Verbakel, F., Meskers, S.C.J., Janssen, R.A.J., Gomes, H.L., Biggelaar, A.J.M., Leeuw, D.M.: Switching dynamics in non-volatile polymer memories. Org. Electron.\u00a09, 829\u2013833 (2008)","journal-title":"Org. Electron."},{"key":"59_CR9","doi-asserted-by":"publisher","first-page":"4908","DOI":"10.1063\/1.1763222","volume":"84","author":"L. Ma","year":"2004","unstructured":"Ma, L., Xu, Q., Yang, Y.: Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer. Appl. Phys. Lett.\u00a084, 4908\u20134911 (2004)","journal-title":"Appl. Phys. Lett."},{"key":"59_CR10","doi-asserted-by":"publisher","first-page":"1063","DOI":"10.1002\/1521-4095(200007)12:14<1063::AID-ADMA1063>3.0.CO;2-9","volume":"12","author":"D. Ma","year":"2000","unstructured":"Ma, D., Aguiar, M., Freire, J.A., H\u00fcmmelgen, I.A.: Organic Reversible Switching Devices for Memory Applications. Adv. Mater.\u00a012, 1063\u20131066 (2000)","journal-title":"Adv. Mater."},{"key":"59_CR11","doi-asserted-by":"publisher","first-page":"589","DOI":"10.1063\/1.1655065","volume":"24","author":"H.K. Henisch","year":"1974","unstructured":"Henisch, H.K., Smith, W.R.: Switching in organic polymer films. Appl. Phys. Lett.\u00a024, 589\u2013592 (1974)","journal-title":"Appl. Phys. Lett."},{"key":"59_CR12","doi-asserted-by":"publisher","first-page":"559","DOI":"10.1016\/j.orgel.2007.04.002","volume":"8","author":"F.L.E. Jakobsson","year":"2007","unstructured":"Jakobsson, F.L.E., Crispin, X., C\u00f6lle, M., B\u00fcchel, M., Leeuw, D.M., Berggren, M.: On the switching mechanism in Rose Bengal-based memory devices. Org. Electron.\u00a08, 559\u2013565 (2007)","journal-title":"Org. Electron."},{"key":"59_CR13","doi-asserted-by":"publisher","first-page":"23505","DOI":"10.1063\/1.1992653","volume":"87","author":"J. Chen","year":"2005","unstructured":"Chen, J., Ma, D.: Single-layer organic memory devices based on N,N\u2032-di(naphthalene-l-yl)-N,N\u2032-diphenyl-benzidine. Appl. Phys. Lett.\u00a087, 23505\u201323508 (2005)","journal-title":"Appl. Phys. Lett."},{"key":"59_CR14","doi-asserted-by":"publisher","first-page":"717","DOI":"10.1002\/adma.200601490","volume":"19","author":"B. Mukherjee","year":"2007","unstructured":"Mukherjee, B., Batabyal, S.K., Pal, A.J.: Electronically Interacting Composite Systems for Electrical Bistability and Memory Applications. Adv. Mater.\u00a019, 717\u2013722 (2007)","journal-title":"Adv. Mater."},{"key":"59_CR15","doi-asserted-by":"publisher","first-page":"119","DOI":"10.1016\/j.orgel.2007.10.002","volume":"9","author":"H.L. Gomes","year":"2008","unstructured":"Gomes, H.L., Benvenho, A.R.V., Leeuw, D.M., C\u00f6lle, M., Stallinga, P., Verbakel, F., Taylor, D.M.: Switching in polymeric resistance random-access memories (RRAMS). Org. Electron.\u00a09, 119\u2013128 (2008)","journal-title":"Org. Electron."}],"container-title":["IFIP Advances in Information and Communication Technology","Technological Innovation for Value Creation"],"original-title":[],"link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/978-3-642-28255-3_59.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,3,21]],"date-time":"2025-03-21T13:22:46Z","timestamp":1742563366000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/978-3-642-28255-3_59"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012]]},"ISBN":["9783642282546","9783642282553"],"references-count":15,"URL":"https:\/\/doi.org\/10.1007\/978-3-642-28255-3_59","relation":{},"ISSN":["1868-4238","1861-2288"],"issn-type":[{"type":"print","value":"1868-4238"},{"type":"electronic","value":"1861-2288"}],"subject":[],"published":{"date-parts":[[2012]]}}}