{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,26]],"date-time":"2025-03-26T18:28:18Z","timestamp":1743013698247,"version":"3.40.3"},"publisher-location":"Tokyo","reference-count":156,"publisher":"Springer Japan","isbn-type":[{"type":"print","value":"9784431557999"},{"type":"electronic","value":"9784431558002"}],"license":[{"start":{"date-parts":[[2015,1,1]],"date-time":"2015-01-01T00:00:00Z","timestamp":1420070400000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"},{"start":{"date-parts":[[2015,1,1]],"date-time":"2015-01-01T00:00:00Z","timestamp":1420070400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015]]},"DOI":"10.1007\/978-4-431-55800-2_2","type":"book-chapter","created":{"date-parts":[[2016,3,29]],"date-time":"2016-03-29T22:07:02Z","timestamp":1459289222000},"page":"69-127","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Density Functional Modeling of Defects and Impurities in Silicon Materials"],"prefix":"10.1007","author":[{"given":"Jos\u00e9","family":"Coutinho","sequence":"first","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2016,3,19]]},"reference":[{"issue":"4","key":"2_CR1","doi-asserted-by":"publisher","first-page":"795","DOI":"10.1109\/TED.2010.2041859","volume":"57","author":"M. Bukhori","year":"2010","unstructured":"Bukhori, M., Roy, S., Asenov, A.: Simulation of statistical aspects of charge trapping and related degradation in bulk mosfets in the presence of random discrete dopants. IEEE Trans. Electron Devices 57(4), 795\u2013803 (2010). doi:10.1109\/TED.2010.2041859","journal-title":"IEEE Trans. Electron Devices"},{"key":"2_CR2","doi-asserted-by":"publisher","first-page":"88","DOI":"10.1016\/j.egypro.2012.03.011","volume":"20","author":"J. Safarian","year":"2012","unstructured":"Safarian, J., Tranell, G., Tangstad, M.: Processes for upgrading metallurgical grade silicon to solar grade silicon. Energy Procedia 20, 88\u201397 (2012). doi:10.1016\/j.egypro.2012.03.011","journal-title":"Energy Procedia"},{"key":"2_CR3","doi-asserted-by":"publisher","first-page":"B864","DOI":"10.1103\/PhysRev.136.B864","volume":"136","author":"P. Hohenberg","year":"1964","unstructured":"Hohenberg, P., Kohn, W.: Inhomogeneous electron gas. Phys. Rev. 136, B864\u2013B871 (1964)","journal-title":"Phys. Rev."},{"key":"2_CR4","doi-asserted-by":"publisher","first-page":"A1133","DOI":"10.1103\/PhysRev.140.A1133","volume":"140","author":"W. Kohn","year":"1965","unstructured":"Kohn, W., Sham, L.J.: Self-consistent equations including exchange and correlation effects. Phys. Rev. 140, A1133\u2013A1138 (1965)","journal-title":"Phys. Rev."},{"key":"2_CR5","doi-asserted-by":"publisher","first-page":"689","DOI":"10.1103\/RevModPhys.61.689","volume":"61","author":"R.O. Jones","year":"1989","unstructured":"Jones, R.O., Gunnarsson, O.: The density functional formalism, its applications and prospects. Rev. Mod. Phys. 61, 689\u2013746 (1989). doi:10.1103\/RevModPhys.61.689","journal-title":"Rev. Mod. Phys."},{"key":"2_CR6","doi-asserted-by":"publisher","first-page":"17953","DOI":"10.1103\/PhysRevB.50.17953","volume":"50","author":"P.E. Bl\u00f6chl","year":"1994","unstructured":"Bl\u00f6chl, P.E.: Projector augmented-wave method. Phys. Rev. B 50, 17953\u201317979 (1994). doi:10.1103\/PhysRevB.50.17953","journal-title":"Phys. Rev. B"},{"key":"2_CR7","doi-asserted-by":"publisher","first-page":"3641","DOI":"10.1103\/PhysRevB.58.3641","volume":"58","author":"C. Hartwigsen","year":"1998","unstructured":"Hartwigsen, C., Goedecker, S., Hutter, J.: Relativistic separable dual-space Gaussian pseudopotentials from H to Rn. Phys. Rev. B 58, 3641\u20133662 (1998). doi:10.1103\/PhysRevB.58.3641","journal-title":"Phys. Rev. B"},{"key":"2_CR8","doi-asserted-by":"publisher","first-page":"1085","DOI":"10.1103\/RevModPhys.71.1085","volume":"71","author":"S. Goedecker","year":"1999","unstructured":"Goedecker, S.: Linear scaling electronic structure methods. Rev. Mod. Phys. 71, 1085\u20131123 (1999). doi:10.1103\/RevModPhys.71.1085","journal-title":"Rev. Mod. Phys."},{"key":"2_CR9","doi-asserted-by":"publisher","first-page":"1041","DOI":"10.1103\/RevModPhys.72.1041","volume":"72","author":"T.L. Beck","year":"2000","unstructured":"Beck, T.L.: Real-space mesh techniques in density-functional theory. Rev. Mod. Phys. 72, 1041\u20131080 (2000). doi:10.1103\/RevModPhys.72.1041","journal-title":"Rev. Mod. Phys."},{"key":"2_CR10","doi-asserted-by":"publisher","first-page":"205104","DOI":"10.1103\/PhysRevB.80.205104","volume":"80","author":"M.J. Rayson","year":"2009","unstructured":"Rayson, M.J., Briddon, P.R.: Highly efficient method for kohn-sham density functional calculations of 500\u201310000 atom systems. Phys. Rev. B 80, 205104 (2009). doi:10.1103\/PhysRevB.80.205104","journal-title":"Phys. Rev. B"},{"key":"2_CR11","doi-asserted-by":"publisher","first-page":"253","DOI":"10.1103\/RevModPhys.86.253","volume":"86","author":"C. Freysoldt","year":"2014","unstructured":"Freysoldt, C., Grabowski, B., Hickel, T., Neugebauer, J., Kresse, G., Janotti, A., Van de Walle, C.G.: First-principles calculations for point defects in solids. Rev. Mod. Phys. 86, 253\u2013305 (2014). doi:10.1103\/RevModPhys.86.253","journal-title":"Rev. Mod. Phys."},{"key":"2_CR12","volume-title":"Quantum Mechanics","author":"L.I. Schiff","year":"1955","unstructured":"Schiff, L.I.: Quantum Mechanics. McGraw-Hill, Singapore (1955)"},{"key":"2_CR13","doi-asserted-by":"publisher","first-page":"457","DOI":"10.1002\/andp.19273892002","volume":"389","author":"M. Born","year":"1927","unstructured":"Born, M., Oppenheimer, R.: Zur quantentheorie der molekeln. Annalen der Physik 389, 457\u2013484 (1927). doi:10.1002\/andp.19273892002","journal-title":"Annalen der Physik"},{"key":"2_CR14","unstructured":"Watkins, G.D.: Deep Centers in Semiconductors, chap. 3 Gordon and Breach, New York (1986)"},{"key":"2_CR15","doi-asserted-by":"publisher","first-page":"075204","DOI":"10.1103\/PhysRevB.67.075204","volume":"67","author":"M.I.J. Probert","year":"2003","unstructured":"Probert, M.I.J., Payne, M.C.: Improving the convergence of defect calculations in supercells: an ab initio study of the neutral silicon vacancy. Phys. Rev. B 67, 075204 (2003). doi:10.1103\/PhysRevB.67.075204","journal-title":"Phys. Rev. B"},{"key":"2_CR16","doi-asserted-by":"publisher","first-page":"165116","DOI":"10.1103\/PhysRevB.74.165116","volume":"74","author":"A.F. Wright","year":"2006","unstructured":"Wright, A.F.: Phys. Rev. B 74, 165116 (2006). doi:10.1103\/PhysRevB.74.165116","journal-title":"Phys. Rev. B"},{"key":"2_CR17","doi-asserted-by":"publisher","first-page":"69","DOI":"10.1103\/RevModPhys.23.69","volume":"23","author":"C.C.J. Roothaan","year":"1951","unstructured":"Roothaan, C.C.J.: New developments in molecular orbital theory. Rev. Mod. Phys. 23, 69\u201389 (1951). doi:10.1103\/RevModPhys.23.69","journal-title":"Rev. Mod. Phys."},{"key":"2_CR18","doi-asserted-by":"publisher","first-page":"1293","DOI":"10.1103\/PhysRev.34.1293","volume":"34","author":"J.C. Slater","year":"1929","unstructured":"Slater, J.C.: The theory of complex spectra. Phys. Rev. 34, 1293\u20131322 (1929). doi:10.1103\/PhysRev.34.1293","journal-title":"Phys. Rev."},{"key":"2_CR19","volume-title":"Computational Physics","author":"J.M. Thijssen","year":"1999","unstructured":"Thijssen, J.M.: Computational Physics. Cambridge University Press, Cambridge (1999)"},{"issue":"1\u20136","key":"2_CR20","doi-asserted-by":"publisher","first-page":"104","DOI":"10.1016\/S0031-8914(34)90011-2","volume":"1","author":"T. Koopmans","year":"1934","unstructured":"Koopmans, T.: \u00dcber die zuordnung von wellenfunktionen und eigenwerten zu den einzelnen elektronen eines atoms. Physica 1(1\u20136), 104\u2013113 (1934). doi:10.1016\/S0031-8914(34)90011-2","journal-title":"Physica"},{"key":"2_CR21","doi-asserted-by":"publisher","first-page":"16021","DOI":"10.1103\/PhysRevB.56.16021","volume":"56","author":"J.P. Perdew","year":"1997","unstructured":"Perdew, J.P., Levy, M.: Comment on \u201csignificance of the highest occupied kohn-sham eigenvalue\u201d. Phys. Rev. B 56, 16021\u201316028 (1997). doi:10.1103\/PhysRevB.56.16021","journal-title":"Phys. Rev. B"},{"key":"2_CR22","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4899-0415-7","volume-title":"Theory of the Inhomogeneous Electron Gas","year":"1983","unstructured":"Lundqvist, S., March, N.H. (eds.): Theory of the Inhomogeneous Electron Gas. Springer, New York (1983). doi:10.1007\/978-1-4899-0415-7"},{"key":"2_CR23","volume-title":"Density-Functional Theory of Atoms and Molecules","author":"R.G. Parr","year":"1989","unstructured":"Parr, R.G., Yang, W.: Density-Functional Theory of Atoms and Molecules. The International Series of Monographs on Chemistry. Oxford University Press, New York (1989)"},{"issue":"1","key":"2_CR24","doi-asserted-by":"publisher","first-page":"69","DOI":"10.1119\/1.19375","volume":"68","author":"N. Argaman","year":"2000","unstructured":"Argaman, N., Makov, G.: Density functional theory: an introduction. Am. J. Phys. 68(1), 69\u201379 (2000). doi:10.1119\/1.19375","journal-title":"Am. J. Phys."},{"issue":"13","key":"2_CR25","doi-asserted-by":"publisher","first-page":"1629","DOI":"10.1088\/0022-3719\/5\/13\/012","volume":"5","author":"U. von Barth","year":"1972","unstructured":"von Barth, U., Hedin, L.: A local exchange-correlation potential for the spin polarized case. J. Phys. C: Solid State Phys. 5(13), 1629\u20131642 (1972). doi:10.1088\/0022-3719\/5\/13\/012","journal-title":"J. Phys. C: Solid State Phys."},{"key":"2_CR26","doi-asserted-by":"publisher","first-page":"1912","DOI":"10.1103\/PhysRevB.7.1912","volume":"7","author":"A.K. Rajagopal","year":"1973","unstructured":"Rajagopal, A.K., Callaway, J.: Inhomogeneous electron gas. Phys. Rev. B 7, 1912\u20131919 (1973). doi:10.1103\/PhysRevB.7.1912","journal-title":"Phys. Rev. B"},{"key":"2_CR27","doi-asserted-by":"publisher","first-page":"5048","DOI":"10.1103\/PhysRevB.23.5048","volume":"23","author":"J.P. Perdew","year":"1981","unstructured":"Perdew, J.P., Zunger, A.: Self-interaction correction to density-functional approximations for many-electron systems. Phys. Rev. B 23, 5048\u20135079 (1981). doi:10.1103\/PhysRevB.23.5048","journal-title":"Phys. Rev. B"},{"key":"2_CR28","doi-asserted-by":"publisher","first-page":"3126","DOI":"10.1103\/PhysRevB.18.3126","volume":"18","author":"D. Ceperley","year":"1978","unstructured":"Ceperley, D.: Ground state of the fermion one-component plasma: a monte carlo study in two and three dimensions. Phys. Rev. B 18, 3126\u20133138 (1978). doi:10.1103\/PhysRevB.18.3126","journal-title":"Phys. Rev. B"},{"key":"2_CR29","doi-asserted-by":"publisher","first-page":"566","DOI":"10.1103\/PhysRevLett.45.566","volume":"45","author":"D.M. Ceperley","year":"1980","unstructured":"Ceperley, D.M., Alder, B.J.: Ground state of the electron gas by a stochastic method. Phys. Rev. Lett. 45, 566\u2013569 (1980). doi:10.1103\/PhysRevLett.45.566","journal-title":"Phys. Rev. Lett."},{"issue":"8","key":"2_CR30","doi-asserted-by":"publisher","first-page":"1200","DOI":"10.1139\/p80-159","volume":"58","author":"S.H. Vosko","year":"1980","unstructured":"Vosko, S.H., Wilk, L., Nusair, M.: Accurate spin-dependent electron liquid correlation energies for local spin density calculations: a critical analysis. Can. J. Phys. 58(8), 1200\u20131211 (1980). doi:10.1139\/p80-159","journal-title":"Can. J. Phys."},{"key":"2_CR31","doi-asserted-by":"publisher","first-page":"13244","DOI":"10.1103\/PhysRevB.45.13244","volume":"45","author":"J.P. Perdew","year":"1992","unstructured":"Perdew, J.P., Wang, Y.: Accurate and simple analytic representation of the electron-gas correlation energy. Phys. Rev. B 45, 13244\u201313249 (1992). doi:10.1103\/PhysRevB.45.13244","journal-title":"Phys. Rev. B"},{"key":"2_CR32","doi-asserted-by":"publisher","first-page":"8972","DOI":"10.1103\/PhysRevB.57.8972","volume":"57","author":"R. Hood","year":"1998","unstructured":"Hood, R., Chou, M., Williamson, A., Rajagopal, G., Needs, R.: Exchange and correlation in silicon. Phys. Rev. B 57, 8972\u20138982 (1998). doi:10.1103\/PhysRevB.57.8972","journal-title":"Phys. Rev. B"},{"key":"2_CR33","doi-asserted-by":"publisher","first-page":"3865","DOI":"10.1103\/PhysRevLett.77.3865","volume":"77","author":"J.P. Perdew","year":"1996","unstructured":"Perdew, J.P., Burke, K., Ernzerhof, M.: Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865\u20133868 (1996). doi:10.1103\/PhysRevLett.77.3865","journal-title":"Phys. Rev. Lett."},{"key":"2_CR34","doi-asserted-by":"publisher","first-page":"16533","DOI":"10.1103\/PhysRevB.54.16533","volume":"54","author":"J.P. Perdew","year":"1996","unstructured":"Perdew, J.P., Burke, K., Wang, Y.: Generalized gradient approximation for the exchange correlation hole of a manyelectron system. Phys. Rev. B 54, 16533\u201316539 (1996). doi:10.1103\/PhysRevB.54.16533","journal-title":"Phys. Rev. B"},{"issue":"15","key":"2_CR35","doi-asserted-by":"publisher","first-page":"152105","DOI":"10.1063\/1.4871702","volume":"104","author":"V.P. Markevich","year":"2014","unstructured":"Markevich, V.P., Leonard, S., Peaker, A.R., Hamilton, B., Marinopoulos, A.G., Coutinho, J.: Titanium in silicon: lattice positions and electronic properties. Appl. Phys. Lett. 104(15), 152105 (2014). doi:10.1063\/1.4871702","journal-title":"Appl. Phys. Lett."},{"key":"2_CR36","volume-title":"Pseudopotentials in the theory of metals","author":"W.A. Harrison","year":"1966","unstructured":"Harrison, W.A.: Pseudopotentials in the theory of metals. Pseudopotentials in the Theory of Metals. W. A. Benjamim, New York (1966)"},{"key":"2_CR37","unstructured":"Brust, D.: The pseudopotential method and the single-particle electronic excitation spectra of crystals. In: Methods in Computational Physics, vol. 8, p. 33. Academic Press, New York (1968)"},{"key":"2_CR38","doi-asserted-by":"crossref","unstructured":"Heine, V.: The pseudopotential concept. In: Ehrenreich, H., Seitz, F., Turnbull, D. (eds.) Solid State Physics vol. 24, pp. 1\u201336. Academic Press (1970). doi:10.1016\/S0081-1947(08)60069-7","DOI":"10.1016\/S0081-1947(08)60069-7"},{"key":"2_CR39","volume-title":"Theory of Defects in Solids","author":"A.M. Stoneham","year":"1975","unstructured":"Stoneham, A.M.: Theory of Defects in Solids. Oxford University Press, London (1975)"},{"issue":"3","key":"2_CR40","doi-asserted-by":"publisher","first-page":"115","DOI":"10.1016\/0167-7977(89)90002-6","volume":"9","author":"W.E. Pickett","year":"1989","unstructured":"Pickett, W.E.: Pseudopotential methods in condensed matter applications. Comput. Phys. Rep. 9(3), 115\u2013197 (1989). doi:10.1016\/0167-7977(89)90002-6","journal-title":"Comput. Phys. Rep."},{"key":"2_CR41","doi-asserted-by":"publisher","first-page":"4199","DOI":"10.1103\/PhysRevB.26.4199","volume":"26","author":"G.B. Bachelet","year":"1982","unstructured":"Bachelet, G.B., Hamann, D.R., Schl\u00fcter, M.: Pseudopotentials that work: from h to pu. Phys. Rev. B 26, 4199\u20134228 (1982). doi:10.1103\/PhysRevB.26.4199","journal-title":"Phys. Rev. B"},{"key":"2_CR42","doi-asserted-by":"publisher","first-page":"1993","DOI":"10.1103\/PhysRevB.43.1993","volume":"43","author":"N. Troullier","year":"1991","unstructured":"Troullier, N., Martins, J.L.: Efficient pseudopotentials for plane-wave calculations. Phys. Rev. B 43, 1993\u20132006 (1991). doi:10.1103\/PhysRevB.43.1993","journal-title":"Phys. Rev. B"},{"key":"2_CR43","doi-asserted-by":"publisher","first-page":"7892","DOI":"10.1103\/PhysRevB.41.7892","volume":"41","author":"D. Vanderbilt","year":"1990","unstructured":"Vanderbilt, D.: Soft self-consistent pseudopotentials in a generalized eigenvalue formalism. Phys. Rev. B 41, 7892\u20137895 (1990). doi:10.1103\/PhysRevB.41.7892","journal-title":"Phys. Rev. B"},{"key":"2_CR44","doi-asserted-by":"publisher","first-page":"1758","DOI":"10.1103\/PhysRevB.59.1758","volume":"59","author":"G. Kresse","year":"1999","unstructured":"Kresse, G., Joubert, D.: From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758\u20131775 (1999). doi:10.1103\/PhysRevB.59.1758","journal-title":"Phys. Rev. B"},{"key":"2_CR45","doi-asserted-by":"publisher","first-page":"5212","DOI":"10.1103\/PhysRevB.7.5212","volume":"7","author":"A. Baldereschi","year":"1973","unstructured":"Baldereschi, A.: Mean-value point in the brillouin zone. Phys. Rev. B 7, 5212\u20135215 (1973). doi:10.1103\/PhysRevB.7.5212","journal-title":"Phys. Rev. B"},{"key":"2_CR46","doi-asserted-by":"publisher","first-page":"692","DOI":"10.1103\/PhysRevB.7.692","volume":"7","author":"D.J. Chadi","year":"1973","unstructured":"Chadi, D.J., Cohen, M.L.: Electronic structure of Hg1\u2212xCdx Te alloys and charge density calculations using representative k points. Phys. Rev. B 7, 692\u2013699 (1973). doi:10.1103\/PhysRevB.7.692","journal-title":"Phys. Rev. B"},{"key":"2_CR47","doi-asserted-by":"publisher","first-page":"5188","DOI":"10.1103\/PhysRevB.13.5188","volume":"13","author":"H.J. Monkhorst","year":"1976","unstructured":"Monkhorst, H.J., Pack, J.D.: Special points for brillouinzone integrations. Phys. Rev. B 13, 5188\u20135192 (1976). doi:10.1103\/PhysRevB.13.5188","journal-title":"Phys. Rev. B"},{"key":"2_CR48","doi-asserted-by":"publisher","first-page":"1748","DOI":"10.1103\/PhysRevB.16.1748","volume":"16","author":"J.D. Pack","year":"1977","unstructured":"Pack, J.D., Monkhorst, H.J.: \u201cSpecial points for brillouinzone integrations\u201d\u2014a reply. Phys. Rev. B 16, 1748\u20131749 (1977). doi:10.1103\/PhysRevB.16.1748","journal-title":"Phys. Rev. B"},{"key":"2_CR49","doi-asserted-by":"publisher","first-page":"809","DOI":"10.1103\/PhysRev.71.809","volume":"71","author":"F. Birch","year":"1947","unstructured":"Birch, F.: Finite elastic strain of cubic crystals. Phys. Rev. 71, 809\u2013824 (1947). doi:10.1103\/PhysRev.71.809","journal-title":"Phys. Rev."},{"key":"2_CR50","doi-asserted-by":"publisher","DOI":"10.1007\/3-540-30437-1","volume-title":"Springer Handbook of Condensed Matter and Materials Data","year":"2005","unstructured":"Martienssen, W., Warlimont, H. (eds.): Springer Handbook of Condensed Matter and Materials Data. Springer, Berlin\/Heidelberg (2005). doi:10.1007\/3-540-30437-1"},{"key":"2_CR51","doi-asserted-by":"publisher","first-page":"340","DOI":"10.1103\/PhysRev.56.340","volume":"56","author":"R.P. Feynman","year":"1939","unstructured":"Feynman, R.P.: Forces in molecules. Phys. Rev. 56, 340\u2013343 (1939). doi:10.1103\/PhysRev.56.340","journal-title":"Phys. Rev."},{"issue":"4","key":"2_CR52","doi-asserted-by":"publisher","first-page":"1275","DOI":"10.1063\/1.1712080","volume":"47","author":"S.T. Epstein","year":"1967","unstructured":"Epstein, S.T., Hurley, A.C., Wyatt, R.E., Parr, R.G.: Integrated and integral hellmann\u2013feynman formulas. J. Chem. Phys. 47(4), 1275\u20131286 (1967). doi:10.1063\/1.1712080","journal-title":"J. Chem. Phys."},{"key":"2_CR53","doi-asserted-by":"publisher","first-page":"1329","DOI":"10.1103\/PhysRevLett.36.1329","volume":"36","author":"G.D. Watkins","year":"1976","unstructured":"Watkins, G.D., Brower, K.L.: Epr observation of the isolated interstitial carbon atom in silicon. Phys. Rev. Lett. 36, 1329\u20131332 (1976). doi:10.1103\/PhysRevLett.36.1329","journal-title":"Phys. Rev. Lett."},{"key":"2_CR54","doi-asserted-by":"publisher","first-page":"2188","DOI":"10.1103\/PhysRevB.55.2188","volume":"55","author":"P. Leary","year":"1997","unstructured":"Leary, P., Jones, R., \u00d6berg, S., Torres, V.J.B.: Dynamic properties of interstitial carbon and carbon carbon pair defects in silicon. Phys. Rev. B 55, 2188\u20132194 (1997). doi:10.1103\/PhysRevB.55.2188","journal-title":"Phys. Rev. B"},{"key":"2_CR55","doi-asserted-by":"publisher","first-page":"094110","DOI":"10.1103\/PhysRevB.82.094110","volume":"82","author":"F. Zirkelbach","year":"2010","unstructured":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J.K.N., Schmidt, W.G., Rauls, E.: Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. Phys. Rev. B 82, 094110 (2010). doi:10.1103\/PhysRevB.82.094110","journal-title":"Phys. Rev. B"},{"issue":"3","key":"2_CR56","doi-asserted-by":"publisher","first-page":"175","DOI":"10.1016\/0038-1098(70)90074-8","volume":"8","author":"A.R. Bean","year":"1970","unstructured":"Bean, A.R., Newman, R.C.: Low temperature electron irradiation of silicon containing carbon. Solid State Commun. 8(3), 175\u2013177 (1970). doi:10.1016\/0038-1098(70)90074-8","journal-title":"Solid State Commun."},{"key":"2_CR57","doi-asserted-by":"publisher","first-page":"5095","DOI":"10.1103\/PhysRevB.10.5095","volume":"10","author":"J.R. Chelikowsky","year":"1974","unstructured":"Chelikowsky, J.R., Cohen, M.L.: Electronic structure of silicon. Phys. Rev. B 10, 5095\u20135107 (1974). doi:10.1103\/PhysRevB.10.5095","journal-title":"Phys. Rev. B"},{"key":"2_CR58","doi-asserted-by":"publisher","first-page":"915","DOI":"10.1103\/PhysRev.98.915","volume":"98","author":"W. Kohn","year":"1955","unstructured":"Kohn, W.: Phys. Rev. 98, 915 (1955)","journal-title":"Phys. Rev."},{"key":"2_CR59","doi-asserted-by":"publisher","first-page":"257","DOI":"10.1016\/S0081-1947(08)60104-6","volume":"5","author":"W. Kohn","year":"1957","unstructured":"Kohn, W.: Solid State Phys. 5, 257 (1957)","journal-title":"Solid State Phys."},{"key":"2_CR60","doi-asserted-by":"publisher","first-page":"1297","DOI":"10.1088\/0034-4885\/44\/12\/002","volume":"44","author":"A.K. Ramdas","year":"1981","unstructured":"Ramdas, A.K., Rodriguez, S.: Spectroscopy of the solidstate analogues of the hydrogen atom: donors and acceptors in semiconductors. Rep. Prog. Phys. 44, 1297\u20131387 (1981). doi:10.1088\/0034-4885\/44\/12\/002","journal-title":"Rep. Prog. Phys."},{"key":"2_CR61","doi-asserted-by":"publisher","first-page":"1392","DOI":"10.1103\/PhysRev.94.1392.2","volume":"94","author":"R.C. Fletcher","year":"1954","unstructured":"Fletcher, R.C., Yager, W.A., Pearson, G.L., Holden, A.N., Read, W.T., Merritt, F.R.: Spin resonance of donors in silicon. Phys. Rev. 94, 1392\u20131393 (1954). doi:10.1103\/PhysRev.94.1392.2","journal-title":"Phys. Rev."},{"key":"2_CR62","doi-asserted-by":"publisher","first-page":"1219","DOI":"10.1103\/PhysRev.114.1219","volume":"114","author":"G. Feher","year":"1959","unstructured":"Feher, G.: Electron spin resonance experiments on donors in silicon. i. electronic structure of donors by the electron nuclear double resonance technique. Phys. Rev. 114, 1219\u20131244 (1959). doi:10.1103\/PhysRev.114.1219","journal-title":"Electron spin resonance experiments on donors in silicon. i. electronic structure of donors by the electron nuclear double resonance technique. Phys. Rev."},{"key":"2_CR63","doi-asserted-by":"publisher","first-page":"4071","DOI":"10.1103\/PhysRevB.1.4071","volume":"1","author":"G.D. Watkins","year":"1970","unstructured":"Watkins, G.D., Ham, F.S.: Electron paramagnetic resonance studies of a system with orbital degeneracy: the lithium donor in silicon. Phys. Rev. B 1, 4071\u20134098 (1970). doi:10.1103\/PhysRevB.1.4071","journal-title":"Phys. Rev. B"},{"issue":"4","key":"2_CR64","doi-asserted-by":"publisher","first-page":"207","DOI":"10.1007\/BF00619081","volume":"27","author":"K. W\u00fcnstel","year":"1982","unstructured":"W\u00fcnstel, K., Wagner, P.: Interstitial iron and ironacceptor pairs in silicon. Appl. Phys. A 27(4), 207\u2013212 (1982). doi:10.1007\/BF00619081","journal-title":"Appl. Phys. A"},{"issue":"11","key":"2_CR65","doi-asserted-by":"publisher","first-page":"6306","DOI":"10.1063\/1.342090","volume":"64","author":"O.O. Awadelkarim","year":"1988","unstructured":"Awadelkarim, O.O., Monemar, B.: A study of ironrelated centers in heavily boron-doped silicon by deep-level transient spectroscopy. J. Appl. Phys. 64(11), 6306\u20136310 (1988). doi:10.1063\/1.342090","journal-title":"J. Appl. Phys."},{"issue":"1","key":"2_CR66","doi-asserted-by":"publisher","first-page":"13","DOI":"10.1007\/s003390050968","volume":"69","author":"A.A. Istratov","year":"1999","unstructured":"Istratov, A.A., Hieslmair, H., Weber, E.R.: Iron and its complexes in silicon. Appl. Phys. A 69(1), 13\u201344 (1999). doi:10.1007\/s003390050968","journal-title":"Appl. Phys. A"},{"key":"2_CR67","doi-asserted-by":"crossref","unstructured":"Sanati, M., Szwacki, N., Estreicher, S.: Interstitial fe in si and its interactions with hydrogen and shallow dopants. Phys. Rev. B 76:125,204, 125204 (2007). doi:10.1103\/ PhysRevB.76.125204","DOI":"10.1103\/PhysRevB.76.125204"},{"key":"2_CR68","doi-asserted-by":"publisher","first-page":"235213","DOI":"10.1103\/PhysRevB.81.235213","volume":"81","author":"D.J. Backlund","year":"2010","unstructured":"Backlund, D.J., Estreicher, S.K.: Ti, fe, and ni in si and their interactions with the vacancy and the a center: a theoretical study. Phys. Rev. B 81, 235213 (2010). doi:10.1103\/PhysRevB.81.235213","journal-title":"Phys. Rev. B"},{"key":"2_CR69","doi-asserted-by":"publisher","first-page":"98","DOI":"10.1103\/PhysRevLett.5.98","volume":"5","author":"G. Ludwig","year":"1960","unstructured":"Ludwig, G., Woodbury, H.: Electronic structure of transition metal ions in a tetrahedral lattice. Phys. Rev. Lett. 5, 98\u2013100 (1960). doi:10.1103\/PhysRevLett.5.98","journal-title":"Phys. Rev. Lett."},{"key":"2_CR70","doi-asserted-by":"publisher","first-page":"1256","DOI":"10.1103\/PhysRevLett.53.1256","volume":"53","author":"H. Katayama-Yoshida","year":"1984","unstructured":"Katayama-Yoshida, H., Zunger, A.: Localization and magnetism of an interstitial iron impurity in silicon. Phys. Rev. Lett. 53, 1256\u20131259 (1984). doi:10.1103\/PhysRevLett.53.1256","journal-title":"Phys. Rev. Lett."},{"key":"2_CR71","doi-asserted-by":"publisher","first-page":"1498","DOI":"10.1103\/PhysRevLett.55.1498","volume":"55","author":"F. Beeler","year":"1985","unstructured":"Beeler, F., Andersen, O., Scheffler, M.: Theoretical evidence for low-spin ground states of early interstitial and late substitutional 3d transition-metal ions in silicon. Phys. Rev. Lett. 55, 1498\u20131501 (1985). doi:10.1103\/PhysRevLett.55.1498","journal-title":"Phys. Rev. Lett."},{"key":"2_CR72","doi-asserted-by":"publisher","first-page":"7877","DOI":"10.1103\/PhysRevB.31.7877","volume":"31","author":"H. Katayama-Yoshida","year":"1985","unstructured":"Katayama-Yoshida, H., Zunger, A.: Calculation of the spin-polarized electronic structure of an interstitial iron impurity in silicon. Phys. Rev. B 31, 7877\u20137899 (1985). doi:10.1103\/PhysRevB.31.7877","journal-title":"Phys. Rev. B"},{"key":"2_CR73","doi-asserted-by":"publisher","first-page":"102","DOI":"10.1103\/PhysRev.117.102","volume":"117","author":"H. Woodbury","year":"1960","unstructured":"Woodbury, H., Ludwig, G.: Spin resonance of transition metals in silicon. Phys. Rev. 117, 102\u2013108 (1960). doi:10.1103\/PhysRev.117.102","journal-title":"Phys. Rev."},{"key":"2_CR74","doi-asserted-by":"publisher","first-page":"605","DOI":"10.1016\/j.physb.2003.09.125","volume":"340\u2013342","author":"Y. Yoshida","year":"2003","unstructured":"Yoshida, Y., Ogawa, S., Arikawa, K.: Direct observation of substitutional Fe atoms in Si and SOI wafers at 1273 k. Physica B: Condensed Matter 340\u2013342, 605\u2013608 (2003). doi:10.1016\/j.physb.2003.09.125","journal-title":"Physica B: Condensed Matter"},{"key":"2_CR75","doi-asserted-by":"publisher","first-page":"611","DOI":"10.4028\/www.scientific.net\/DDF.194-199.611","volume":"194\u2013199","author":"Y. Yoshida","year":"2001","unstructured":"Yoshida, Y., Kobayashi, Y., Hayakawa, K., Yukihira, K., Shimura, F., Yoshida, A., Diao, X., Ogawa, H., Yano, Y., Ambe, F.: In-beam M\u00f6ssbauer study of interstitial and substitutional 57mn\/57fe jumps in si. Defect Diffus. Forum 194\u2013199, 611\u2013616 (2001). doi:10.4028\/www.scientific.net\/DDF.194-199.611","journal-title":"Defect Diffus. Forum"},{"key":"2_CR76","doi-asserted-by":"crossref","unstructured":"Gunnlaugsson, H.P., Weyer, G., Dietrich, M., collaboration, I., Fanciulli, M., Bharuth-Ram, K., Sielemann, R.: Charge state dependence of the diffusivity of interstitial Fe in silicon detected by m\u00f6ssbauer spectroscopy. Appl. Phys. Lett. 80(15), 2657\u20132659 (2002). doi:10.1063\/1.1469216","DOI":"10.1063\/1.1469216"},{"key":"2_CR77","doi-asserted-by":"publisher","first-page":"014115","DOI":"10.1103\/PhysRevB.72.014115","volume":"72","author":"U. Wahl","year":"2005","unstructured":"Wahl, U., Correia, J., Rita, E., Ara\u00fajo, J., Soares, J.: Lattice sites of implanted fe in si. Phys. Rev. B 72, 014115 (2005). doi:10.1103\/PhysRevB.72.014115","journal-title":"Phys. Rev. B"},{"key":"2_CR78","doi-asserted-by":"publisher","first-page":"69","DOI":"10.1016\/j.physb.2005.12.019","volume":"376\u2013377","author":"Y. Yoshida","year":"2006","unstructured":"Yoshida, Y., Kobayashi, Y., Hayakawa, K., Yukihira, K., Yoshida, A., Ueno, H., Shimura, F., Ambe, F.: In situ observation of substitutional and interstitial fe atoms in si after gev-implantation: an in-beam m\u00f6ssbauer study. Physica B: Condens. Matter 376\u2013377, 69\u201372 (2006). doi: 10.1016\/j.physb.2005.12.019","journal-title":"Physica B: Condens. Matter"},{"issue":"1\u20133","key":"2_CR79","doi-asserted-by":"publisher","first-page":"133","DOI":"10.1007\/s10751-011-0424-3","volume":"204","author":"Y. Yoshida","year":"2012","unstructured":"Yoshida, Y., Suzuki, K., Kobayashi, Y., Nagatomo, T., Akiyama, Y., Yukihira, K., Hayakawa, K., Ueno, H., Yoshimi, A., Nagae, D., Asahi, K., Langouche, G.: 57fe charge states in mc-si solar cells under light illumination after gev-implantation of 57Mn. Hyperfine Interact. 204(1\u20133), 133\u2013137 (2012). doi:10.1007\/s10751-011-0424-3","journal-title":"Hyperfine Interact."},{"key":"2_CR80","doi-asserted-by":"publisher","first-page":"363","DOI":"10.1016\/S0921-4526(99)00478-0","volume":"273\u2013274","author":"G. Weyer","year":"1999","unstructured":"Weyer, G., Burchard, A., Fanciulli, M., Fedoseyev, V., Gunnlaugsson, H., Mishin, V., Sielemann, R.: The electronic configuration of substitutional fe in silicon. Physica B: Condens. Matter 273\u2013274, 363\u2013366 (1999). doi:10.1016\/S0921-4526(99)00478-0","journal-title":"Physica B: Condens. Matter"},{"key":"2_CR81","doi-asserted-by":"publisher","first-page":"3060","DOI":"10.1103\/PhysRevB.12.3060","volume":"12","author":"O.K. Andersen","year":"1975","unstructured":"Andersen, O.K.: Linear methods in band theory. Phys. Rev. B 12, 3060\u20133083 (1975). doi:10.1103\/PhysRevB.12.3060","journal-title":"Phys. Rev. B"},{"key":"2_CR82","doi-asserted-by":"publisher","first-page":"71","DOI":"10.1016\/S0010-4655(02)00206-0","volume":"147","author":"K. Schwarz","year":"2002","unstructured":"Schwarz, K., Blaha, P., Madsen, G.: Electronic structure calculations of solids using the {WIEN2k} package for material sciences. Comput. Phys. Commun. 147, 71\u201376 (2002). doi:10.1016\/S0010-4655(02)00206-0","journal-title":"Comput. Phys. Commun."},{"key":"2_CR83","doi-asserted-by":"publisher","first-page":"155","DOI":"10.1007\/BF01312171","volume":"92","author":"J. K\u00fcbler","year":"1993","unstructured":"K\u00fcbler, J., Kumm, A.E., Overhof, H., Schwalback, O., Hartick, M., Kankeleit, E., Keck, B., Wende, L., Seilemann, R.: Isomer-shift of interstitial and substitutional iron in silicon and germanium. Z. Phys. B 92, 155\u2013162 (1993). doi: 10.1007\/BF01312171","journal-title":"Z. Phys. B"},{"issue":"1\u20133","key":"2_CR84","doi-asserted-by":"publisher","first-page":"281","DOI":"10.1007\/s10751-013-0946-y","volume":"226","author":"M. Elzain","year":"2014","unstructured":"Elzain, M., Al-Harthi, S., Gismelseed, A., Al-Rawas, A., Yousif, A., Widatallah, H., Al-Barwani, M.: The magnetic and hyperfine properties of iron in silicon carbide. Hyperfine Interact. 226(1\u20133), 281\u2013287 (2014). doi: 10.1007\/s10751-013-0946-y","journal-title":"Hyperfine Interact."},{"issue":"2","key":"2_CR85","doi-asserted-by":"publisher","first-page":"324","DOI":"10.1063\/1.340297","volume":"63","author":"Z. You","year":"1988","unstructured":"You, Z., Gong, M., Chen, J., Corbett, J.W.: Iron-vacancy-oxygen complex in silicon. J. Appl. Phys. 63(2), 324\u2013326 (1988). doi:10.1063\/1.340297","journal-title":"J. Appl. Phys."},{"issue":"9","key":"2_CR86","doi-asserted-by":"publisher","first-page":"1041","DOI":"10.1134\/1.1797482","volume":"38","author":"B. Komarov","year":"2004","unstructured":"Komarov, B.: Special features of radiation-defect annealing in silicon p-n structures: the role of fe impurity atoms. Semiconductors 38(9), 1041\u20131046 (2004). doi:10.1134\/1.1797482","journal-title":"Semiconductors"},{"issue":"10\u201311","key":"2_CR87","doi-asserted-by":"publisher","first-page":"1992","DOI":"10.1002\/pssc.201200163","volume":"9","author":"C.K. Tang","year":"2012","unstructured":"Tang, C.K., Vines, L., Svensson, B.G., Monakhov, E.V.: Deep level transient spectroscopy on proton-irradiated Fecontaminated p-type silicon. Physica Status Solidi (C) 9(10\u201311), 1992\u20131995 (2012). doi:10.1002\/pssc.201200163","journal-title":"Physica Status Solidi (C)"},{"issue":"4","key":"2_CR88","doi-asserted-by":"publisher","first-page":"044503","DOI":"10.1063\/1.4788695","volume":"113","author":"C.K. Tang","year":"2013","unstructured":"Tang, C.K., Vines, L., Markevich, V.P., Svensson, B.G., Monakhov, E.V.: Divacancy-iron complexes in silicon. J. Appl. Phys. 113(4), 044503 (2013). doi:10.1063\/1.4788695","journal-title":"J. Appl. Phys."},{"key":"2_CR89","doi-asserted-by":"publisher","first-page":"125214","DOI":"10.1103\/PhysRevB.77.125214","volume":"77","author":"S. Estreicher","year":"2008","unstructured":"Estreicher, S., Sanati, M., Gonzalez Szwacki, N.: Iron in silicon: interactions with radiation defects, carbon, and oxygen. Phys. Rev. B 77, 125214 (2008). doi:10.1103\/PhysRevB.77.125214","journal-title":"Phys. Rev. B"},{"key":"2_CR90","unstructured":"Watkins, G.D.: Deep Centers in Semiconductors, 2nd edn., chap. 3, p. 177. Gordon and Breach Science Publishers, New York (1992)"},{"key":"2_CR91","doi-asserted-by":"publisher","first-page":"5989","DOI":"10.1103\/PhysRevB.26.5989","volume":"26","author":"A. Zunger","year":"1982","unstructured":"Zunger, A., Lindefelt, U.: Theory of substitutional and interstitial 3d impurities in silicon. Phys. Rev. B 26, 5989\u20135992 (1982). doi:10.1103\/PhysRevB.26.5989","journal-title":"Phys. Rev. B"},{"key":"2_CR92","volume-title":"Point Defects and Diffusion","author":"C.P. Flynn","year":"1972","unstructured":"Flynn, C.P.: Point Defects and Diffusion. Oxford University Press, Glasgow (1972)"},{"key":"2_CR93","doi-asserted-by":"publisher","first-page":"233205","DOI":"10.1103\/PhysRevB.65.233205","volume":"65","author":"G.S. Hwang","year":"2002","unstructured":"Hwang, G.S., Goddard III, W.A.: Diffusion and dissociation of neutral divacancies in crystalline silicon. Phys. Rev. B 65, 233205 (2002). doi:10.1103\/PhysRevB.65.233205","journal-title":"Phys. Rev. B"},{"key":"2_CR94","doi-asserted-by":"publisher","first-page":"A543","DOI":"10.1103\/PhysRev.138.A543","volume":"138","author":"G.D. Watkins","year":"1965","unstructured":"Watkins, G.D., Corbett, J.W.: Defects in irradiated silicon: electron paramagnetic resonance of the divacancy. Phys. Rev. 138, A543\u2013A555 (1965). doi:10.1103\/PhysRev.138.A543","journal-title":"Phys. Rev."},{"key":"2_CR95","doi-asserted-by":"publisher","first-page":"978","DOI":"10.1103\/PhysRevLett.68.978","volume":"68","author":"T. Heiser","year":"1992","unstructured":"Heiser, T., Mesli, A.: Charge-state-dependent diffusion and carrier-emission-limited drift of iron in silicon. Phys. Rev. Lett. 68, 978\u2013981 (1992). doi:10.1103\/PhysRevLett.68.978","journal-title":"Phys. Rev. Lett."},{"key":"2_CR96","doi-asserted-by":"publisher","first-page":"1882","DOI":"10.1103\/PhysRevB.46.1882","volume":"46","author":"H. Takahashi","year":"1992","unstructured":"Takahashi, H., Suezawa, M., Sumino, K.: Charge-state-dependent activation energy for diffusion of iron in silicon. Phys. Rev. B 46, 1882\u20131885 (1992). doi:10.1103\/PhysRevB.46.1882","journal-title":"Phys. Rev. B"},{"issue":"43","key":"2_CR97","doi-asserted-by":"publisher","first-page":"10221","DOI":"10.1002\/anie.201100733","volume":"50","author":"S.K. Estreicher","year":"2011","unstructured":"Estreicher, S.K., Backlund, D.J., Carbogno, C., Scheffler, M.: Activation energies for diffusion of defects in silicon: the role of the exchange correlation functional. Angewandte Chemie International Edition 50(43), 10221\u201310225 (2011). doi:10.1002\/anie.201100733","journal-title":"Angewandte Chemie International Edition"},{"key":"2_CR98","doi-asserted-by":"publisher","first-page":"407","DOI":"10.1103\/PhysRevB.35.407","volume":"35","author":"H. Katayama-Yoshida","year":"1987","unstructured":"Katayama-Yoshida, H., Hamada, N.: Superhyperfine interaction and spin-lattice relaxation of an interstitial iron impurity in silicon. Phys. Rev. B 35, 407\u2013410 (1987). doi:10.1103\/PhysRevB.35.407","journal-title":"Phys. Rev. B"},{"key":"2_CR99","doi-asserted-by":"publisher","first-page":"074103","DOI":"10.1063\/1.3684549","volume":"136","author":"D. Sheppard","year":"2012","unstructured":"Sheppard, D., Xiao, P., Chemelewski, W., Johnson, D.D., Henkelman, G.: A generalized solidstate nudged elastic band method. J. Chem. Phys. 136, 074103 (2012)","journal-title":"J. Chem. Phys."},{"key":"2_CR100","doi-asserted-by":"publisher","first-page":"174101","DOI":"10.1103\/PhysRevB.86.174101","volume":"86","author":"J. Coutinho","year":"2012","unstructured":"Coutinho, J., Markevich, V.P., Peaker, A.R., Hamilton, B., Lastovskii, S.B., Murin, L.I., Svensson, B.J., Rayson, M.J., Briddon, P.R.: Electronic and dynamical properties of the silicon trivacancy. Phys. Rev. B 86, 174101 (2012). doi:10.1103\/PhysRevB.86.174101","journal-title":"Phys. Rev. B"},{"key":"2_CR101","doi-asserted-by":"publisher","first-page":"235207","DOI":"10.1103\/PhysRevB.80.235207","volume":"80","author":"V.P. Markevich","year":"2009","unstructured":"Markevich, V.P., Peaker, A.R., Lastovskii, S.B., Murin, L.I., Coutinho, J., Torres, V.J.B., Briddon, P.R., Dobaczewski, L., Monakhov, E.V., Svensson, B.G.: Trivacancy and trivacancy-oxygen complexes in silicon: experiments and ab initio modeling. Phys. Rev. B 80, 235207 (2009). doi:10.1103\/PhysRevB.80.235207","journal-title":"Phys. Rev. B"},{"key":"2_CR102","volume-title":"Fundamentals of Statistical and Thermal Physics","author":"F. Reif","year":"1965","unstructured":"Reif, F.: Fundamentals of Statistical and Thermal Physics. McGraw-Hill, New York (1965)"},{"key":"2_CR103","doi-asserted-by":"publisher","first-page":"125209","DOI":"10.1103\/PhysRevB.70.125209","volume":"70","author":"S.K. Estreicher","year":"2004","unstructured":"Estreicher, S.K., Sanati, M., West, D., Ruymgaart, F.: Thermodynamics of impurities in semiconductors. Phys. Rev. B 70, 125209 (2004). doi:10.1103\/PhysRevB.70.125209","journal-title":"Phys. Rev. B"},{"key":"2_CR104","doi-asserted-by":"publisher","first-page":"415","DOI":"10.1016\/0038-1101(80)90076-3","volume":"23","author":"A. Rohatgi","year":"1980","unstructured":"Rohatgi, A., Davis, J.R., Hopkins, R.H., Rai-Choudhury, P., McMullin, P.G., McCormick, J.R.: Solid-State Electron. 23, 415\u2013422 (1980). doi:10.1016\/0038-1101(80)90076-3","journal-title":"Solid-State Electron."},{"key":"2_CR105","doi-asserted-by":"crossref","unstructured":"Kolkovsky, V., Scheffler, L., Weber, J.: A re-examination of the interstitial ti levels in si. Phys. Stat. Sol. (C) 9(10\u201311), 1996\u20131999 (2012). doi:10.1002\/pssc.201200141","DOI":"10.1002\/pssc.201200141"},{"issue":"14","key":"2_CR106","doi-asserted-by":"publisher","first-page":"1269","DOI":"10.1063\/1.100446","volume":"53","author":"S. Hocine","year":"1988","unstructured":"Hocine, S., Mathiot, D.: Titanium diffusion in silicon. Appl. Phys. Lett. 53(14), 1269\u20131271 (1988). doi:10.1063\/1.100446","journal-title":"Appl. Phys. Lett."},{"key":"2_CR107","doi-asserted-by":"publisher","first-page":"1327","DOI":"10.1103\/PhysRevLett.55.1327","volume":"55","author":"G.A. Baraff","year":"1985","unstructured":"Baraff, G.A., Schl\u00fcter, M.: Electronic structure, total energies, and abundances of the elementary point defects in gaas. Phys. Rev. Lett. 55, 1327\u20131330 (1985). doi:10.1103\/PhysRevLett.55.1327","journal-title":"Phys. Rev. Lett."},{"key":"2_CR108","doi-asserted-by":"publisher","first-page":"7649","DOI":"10.1103\/PhysRevB.38.7649","volume":"38","author":"G.X. Qian","year":"1988","unstructured":"Qian, G.X., Martin, R.M., Chadi, D.J.: Firstprinciples study of the atomic reconstructions and energies of ga- and as-stabilized gaas(100) surfaces. Phys. Rev. B 38, 7649\u20137663 (1988). doi:10.1103\/PhysRevB.38.7649","journal-title":"Phys. Rev. B"},{"key":"2_CR109","doi-asserted-by":"publisher","first-page":"2487","DOI":"10.1103\/PhysRevLett.62.2487","volume":"62","author":"J.E. Northrup","year":"1989","unstructured":"Northrup, J.E.: Energetics of gaas island formation on si(100). Phys. Rev. Lett. 62, 2487\u20132490 (1989). doi:10.1103\/PhysRevLett.62.2487","journal-title":"Phys. Rev. Lett."},{"key":"2_CR110","doi-asserted-by":"publisher","first-page":"8154","DOI":"10.1103\/PhysRevB.35.8154","volume":"35","author":"C.G. Van de Walle","year":"1987","unstructured":"Van de Walle, C.G., Martin, R.M.: Theoretical study of band offsets at semiconductor interfaces. Phys. Rev. B 35, 8154\u20138165 (1987). doi:10.1103\/PhysRevB.35.8154","journal-title":"Phys. Rev. B"},{"key":"2_CR111","doi-asserted-by":"publisher","first-page":"4014","DOI":"10.1103\/PhysRevB.51.4014","volume":"51","author":"G. Makov","year":"1995","unstructured":"Makov, G., Payne, M.C.: Periodic boundary conditions in ab initio calculations. Phys. Rev. B 51, 4014\u20134022 (1995). doi:10.1103\/PhysRevB.51.4014","journal-title":"Phys. Rev. B"},{"issue":"15","key":"2_CR112","doi-asserted-by":"publisher","first-page":"3063","DOI":"10.1016\/j.physb.2011.08.028","volume":"407","author":"H.P. Komsa","year":"2012","unstructured":"Komsa, H.P., Rantala, T., Pasquarello, A.: Comparison between various finite-size supercell correction schemes for charged defect calculations. Physica B: Condens. Matter 407(15), 3063\u20133067 (2012). doi:10.1016\/j.physb.2011.08.028","journal-title":"Physica B: Condens. Matter"},{"key":"2_CR113","doi-asserted-by":"publisher","first-page":"69","DOI":"10.1007\/11690320_4","volume-title":"Theory of Defects in Semiconductors. Topics in Applied Physics","author":"J.P. Goss","year":"2007","unstructured":"Goss, J.P., Shaw, M.J., Briddon, P.R.: Marker-method calculations for electrical levels using gaussian-orbital basis sets. In: Drabold, D.A., Estreicher, S.K. (eds.) Theory of Defects in Semiconductors. Topics in Applied Physics, vol. 104, pp. 69\u201394. Springer, Berlin (2007). doi:10.1007\/11690320_4"},{"key":"2_CR114","doi-asserted-by":"publisher","first-page":"2111","DOI":"10.1103\/PhysRevLett.82.2111","volume":"82","author":"A. Resende","year":"1999","unstructured":"Resende, A., Jones, R., \u00d6berg, S., Briddon, P.R.: Calculations of electrical levels of deep centers: application to auh and ag-h defects in silicon. Phys. Rev. Lett. 82, 2111\u20132114 (1999). doi:10.1103\/PhysRevLett.82.2111","journal-title":"Phys. Rev. Lett."},{"key":"2_CR115","doi-asserted-by":"publisher","first-page":"235204","DOI":"10.1103\/PhysRevB.64.235204","volume":"64","author":"J.W. Jeong","year":"2001","unstructured":"Jeong, J.W., Oshiyama, A.: Atomic and electronic structures of a boron impurity and its diffusion pathways in crystalline si. Phys. Rev. B 64, 235204 (2001). doi:10.1103\/PhysRevB.64.235204","journal-title":"Phys. Rev. B"},{"issue":"3","key":"2_CR116","doi-asserted-by":"publisher","first-page":"032108","DOI":"10.1063\/1.4891575","volume":"105","author":"P. Santos","year":"2014","unstructured":"Santos, P., Coutinho, J., Torres, V.J.B., Rayson, M.J., Briddon, P.R.: Hydrogen passivation of titanium impurities in silicon: effect of doping conditions. Appl. Phys. Lett. 105(3), 032108 (2014). doi:10.1063\/1.4891575","journal-title":"Appl. Phys. Lett."},{"key":"2_CR117","doi-asserted-by":"publisher","first-page":"155208","DOI":"10.1103\/PhysRevB.82.155208","volume":"82","author":"D.J. Backlund","year":"2010","unstructured":"Backlund, D.J., Estreicher, S.K.: Structural, electrical, and vibrational properties of ti-h and ni-h complexes in si. Phys. Rev. B 82, 155208 (2010). doi:10.1103\/PhysRevB.82.155208","journal-title":"Phys. Rev. B"},{"key":"2_CR118","doi-asserted-by":"publisher","first-page":"24","DOI":"10.1016\/j.physb.2013.11.005","volume":"439","author":"V. Kolkovsky","year":"2014","unstructured":"Kolkovsky, V., Scheffler, L., Weber, J.: Transition metals (ti and co) in silicon and their complexes with hydrogen: a lapplace dlts study. Physica B 439, 24\u201328 (2014). doi:10.1016\/j.physb.2013.11.005","journal-title":"Physica B"},{"issue":"13","key":"2_CR119","doi-asserted-by":"publisher","first-page":"132103","DOI":"10.1063\/1.4822329","volume":"103","author":"S. Leonard","year":"2013","unstructured":"Leonard, S., Markevich, V.P., Peaker, A.R., Hamilton, B.: Passivation of titanium by hydrogen in silicon. Appl. Phys. Lett. 103(13), 132103 (2013). doi:10.1063\/1.4822329","journal-title":"Appl. Phys. Lett."},{"key":"2_CR120","doi-asserted-by":"publisher","first-page":"R11038","DOI":"10.1103\/PhysRevB.54.R11038","volume":"54","author":"W. Jost","year":"1996","unstructured":"Jost, W., Weber, J.: Titanium-hydrogen defects in silicon. Phys. Rev. B 54, R11038\u2013R11041 (1996). doi:10.1103\/PhysRevB.54.R11038","journal-title":"Phys. Rev. B"},{"key":"2_CR121","volume-title":"Dynamical Theory of Crystal Lattices","author":"M. Born","year":"1954","unstructured":"Born, M., Huang, K.: Dynamical Theory of Crystal Lattices. Oxford University Press, Oxford (1954)"},{"key":"2_CR122","volume-title":"Lattice Dynamics in the Harmonic Approximation","author":"A.A. Maradudin","year":"1963","unstructured":"Maradudin, A.A., Montroll, E.W., Weiss, G.H.: Lattice Dynamics in the Harmonic Approximation. Academic, New York (1963)"},{"volume-title":"The Physics of Phonons","year":"1990","key":"2_CR123","unstructured":"Srivastava, G.P. (ed.): The Physics of Phonons. Adam Hilger, Bristol (1990)"},{"key":"2_CR124","doi-asserted-by":"publisher","first-page":"014109","DOI":"10.1103\/PhysRevB.65.014109","volume":"65","author":"J. Coutinho","year":"2001","unstructured":"Coutinho, J., Jones, R., Briddon, P.R., \u00d6berg, S., Murin, L.I., Markevich, V.P., Lindstr\u00f6m, J.L.: Interstitial carbon-oxygen center and hydrogen related shallow thermal donors in Si. Phys. Rev. B 65, 014109 (2001). doi:10.1103\/PhysRevB.65.014109","journal-title":"Phys. Rev. B"},{"key":"2_CR125","doi-asserted-by":"publisher","first-page":"86","DOI":"10.1103\/PhysRevLett.68.86","volume":"68","author":"R. Jones","year":"1992","unstructured":"Jones, R., \u00d6berg, S.: Oxygen frustration and the interstitial carbon-oxygen complex in si. Phys. Rev. Lett. 68, 86\u201389 (1992). doi:10.1103\/PhysRevLett.68.86","journal-title":"Phys. Rev. Lett."},{"key":"2_CR126","doi-asserted-by":"publisher","first-page":"184106","DOI":"10.1103\/PhysRevB.68.184106","volume":"68","author":"J. Coutinho","year":"2003","unstructured":"Coutinho, J., Andersen, O., Dobaczewski, L., Bonde Nielsen, K., Peaker, A.R., Jones, R., \u00d6berg, S., Briddon, P.R.: Effect of stress on the energy levels of the vacancy-oxygen-hydrogen complex in si. Phys. Rev. B 68, 184106 (2003). doi:10.1103\/PhysRevB.68.184106","journal-title":"Phys. Rev. B"},{"issue":"1","key":"2_CR127","doi-asserted-by":"publisher","first-page":"287","DOI":"10.1146\/annurev-chembioeng-062011-081040","volume":"3","author":"M.G. Panthani","year":"2012","unstructured":"Panthani, M.G., Korgel, B.A.: Nanocrystals for electronics. Annu. Rev. Chem. Biomol. Eng. 3(1), 287\u2013311 (2012). doi:10.1146\/annurev-chembioeng-062011-081040","journal-title":"Annu. Rev. Chem. Biomol. Eng."},{"issue":"8","key":"2_CR128","doi-asserted-by":"publisher","first-page":"2506","DOI":"10.1021\/nl071486l","volume":"7","author":"M.C. Beard","year":"2007","unstructured":"Beard, M.C., Knutsen, K.P., Yu, P., Luther, J.M., Song, Q., Metzger, W.K., Ellingson, R.J., Nozik, A.J.: Multiple exciton generation in colloidal silicon nanocrystals. Nano Lett. 7(8), 2506\u20132512 (2007). doi:10.1021\/nl071486l","journal-title":"Nano Lett."},{"key":"2_CR129","doi-asserted-by":"publisher","first-page":"2661","DOI":"10.1021\/nl101413d","volume":"10","author":"Z.C. Holman","year":"2010","unstructured":"Holman, Z.C., Liu, C.Y., Kortshagen, U.R.: Germanium and silicon nanocrystal thin-film field-effect transistors from solution. Nano Lett. 10, 2661\u20132666 (2010). doi:10.1021\/nl101413d","journal-title":"Nano Lett."},{"issue":"5","key":"2_CR130","doi-asserted-by":"publisher","first-page":"1952","DOI":"10.1021\/nl2001692","volume":"11","author":"K.Y. Cheng","year":"2011","unstructured":"Cheng, K.Y., Anthony, R., Kortshagen, U.R., Holmes, R.J.: High-efficiency silicon nanocrystal light-emitting devices. Nano Lett. 11(5), 1952\u20131956 (2011). doi:10.1021\/nl2001692","journal-title":"Nano Lett."},{"issue":"5","key":"2_CR131","doi-asserted-by":"publisher","first-page":"379","DOI":"10.1002\/adem.201200233","volume":"15","author":"V. Kessler","year":"2013","unstructured":"Kessler, V., Gautam, D., H\u00fclser, T., Spree, M., Theissmann, R., Winterer, M., Wiggers, H., Schierning, G., Schmechel, R.: Thermoelectric properties of nanocrystalline silicon from a scaled-up synthesis plant. Adv. Eng. Mater. 15(5), 379\u2013385 (2013). doi:10.1002\/adem.201200233","journal-title":"Adv. Eng. Mater."},{"issue":"5","key":"2_CR132","doi-asserted-by":"publisher","first-page":"696","DOI":"10.1002\/adfm.200801548","volume":"19","author":"A. Gupta","year":"2009","unstructured":"Gupta, A., Swihart, M.T., Wiggers, H.: Luminescent colloidal dispersion of silicon quantum dots from microwave plasma synthesis: Exploring the photoluminescence behavior across the visible spectrum. Adv. Funct. Mater. 19(5), 696\u2013703 (2009). doi:10.1002\/adfm.200801548","journal-title":"Adv. Funct. Mater."},{"issue":"2","key":"2_CR133","doi-asserted-by":"publisher","first-page":"393","DOI":"10.1021\/cm2032866","volume":"24","author":"C.M. Hessel","year":"2012","unstructured":"Hessel, C.M., Reid, D., Panthani, M.G., Rasch, M.R., Goodfellow, B.W., Wei, J., Fujii, H., Akhavan, V., Korgel, B.A.: Synthesis of ligand-stabilized silicon nanocrystals with size-dependent photoluminescence spanning visible to near-infrared wavelengths. Chem. Mater. 24(2), 393\u2013401 (2012). doi:10.1021\/cm2032866","journal-title":"Chem. Mater."},{"key":"2_CR134","doi-asserted-by":"publisher","first-page":"125437","DOI":"10.1103\/PhysRevB.84.125437","volume":"84","author":"A. Carvalho","year":"2011","unstructured":"Carvalho, A., Coutinho, J., Barroso, M., Silva, E.L., \u00d6berg, S., Rayson, M., Briddon, P.R.: Electronic structure modification of si nanocrystals with f4-tcnq. Phys. Rev. B 84, 125437 (2011). doi:10.1103\/PhysRevB.84.125437","journal-title":"Phys. Rev. B"},{"key":"2_CR135","doi-asserted-by":"publisher","first-page":"046501","DOI":"10.1088\/0034-4885\/74\/4\/046501","volume":"74","author":"J.R. Chelikowsky","year":"2011","unstructured":"Chelikowsky, J.R., Alemany, M.M.G., Chan, T.L., Dalpian, G.M.: Computational studies of doped nanostructures. Rep. Progress Phys. 74, 046501 (2011). doi:10.1088\/0034-4885\/74\/4\/046501","journal-title":"Rep. Progress Phys."},{"key":"2_CR136","doi-asserted-by":"publisher","first-page":"113303","DOI":"10.1103\/PhysRevB.72.113303","volume":"72","author":"G. Cantele","year":"2005","unstructured":"Cantele, G., Degoli, E., Luppi, E., Magri, R., Ninno, D., Iadonisi, G., Ossicini, S.: Firstprinciples study of n- and p-doped silicon nanoclusters. Phys. Rev. B 72, 113303 (2005). doi:10.1103\/PhysRevB.72.113303","journal-title":"Phys. Rev. B"},{"key":"2_CR137","doi-asserted-by":"publisher","first-page":"2878","DOI":"10.1021\/nl8016169","volume":"8","author":"M.H. Du","year":"2008","unstructured":"Du, M.H., Erwin, S.C., Efros, A.L.: Trapped-dopant model of doping in semiconductor nanocrystals. Nano Lett. 8, 2878\u20132882 (2008). doi:10.1021\/nl8016169","journal-title":"Nano Lett."},{"issue":"3","key":"2_CR138","doi-asserted-by":"publisher","first-page":"821","DOI":"10.1021\/nl903183n","volume":"10","author":"T.L. Chan","year":"2010","unstructured":"Chan, T.L., Chelikowsky, J.R.: Controlling diffusion of lithium in silicon nanostructures. Nano Lett. 10(3), 821\u2013825 (2010). doi:10.1021\/nl903183n","journal-title":"Nano Lett."},{"issue":"11","key":"2_CR139","doi-asserted-by":"publisher","first-page":"3780","DOI":"10.1021\/nl901970u","volume":"9","author":"A. Gali","year":"2009","unstructured":"Gali, A., V\u00f6r\u00f6s, M., Rocca, D., Zimanyi, G.T., Galli, G.: High-energy excitations in silicon nanoparticles. Nano Lett. 9(11), 3780\u20133785 (2009). doi:10.1021\/nl901970u","journal-title":"Nano Lett."},{"issue":"7","key":"2_CR140","doi-asserted-by":"publisher","first-page":"3817","DOI":"10.1021\/nl500932q","volume":"14","author":"R.N. Pereira","year":"2014","unstructured":"Pereira, R.N., Coutinho, J., Niesar, S., Oliveira, T.A., Aigner, W., Wiggers, H., Rayson, M.J., Briddon, P.R., Brandt, M.S., Stutzmann, M.: Resonant electronic coupling enabled by small molecules in nanocrystal solids. Nano Lett. 14(7), 3817\u20133826 (2014). doi:10.1021\/nl500932q","journal-title":"Nano Lett."},{"issue":"2","key":"2_CR141","doi-asserted-by":"publisher","first-page":"105","DOI":"10.1038\/nphoton.2007.279","volume":"2","author":"D. Timmerman","year":"2008","unstructured":"Timmerman, D., Izeddin, I., Stallinga, P., Yassievich, I.N., Gregorkiewicz, T.: Spaceseparated quantum cutting with silicon nanocrystals for photovoltaic applications. Nat. Photon. 2(2), 105\u2013109 (2008). doi:10.1038\/nphoton.2007.279","journal-title":"Nat. Photon."},{"key":"2_CR142","doi-asserted-by":"publisher","first-page":"165441","DOI":"10.1103\/PhysRevB.87.165441","volume":"87","author":"R. Guerra","year":"2013","unstructured":"Guerra, R., Ossicini, S.: Role of strain in interacting silicon nanoclusters. Phys. Rev. B 87, 165441 (2013). doi:10.1103\/PhysRevB.87.165441","journal-title":"Phys. Rev. B"},{"key":"2_CR143","doi-asserted-by":"publisher","first-page":"1392","DOI":"10.1103\/PhysRevLett.54.1392","volume":"54","author":"F. Wooten","year":"1985","unstructured":"Wooten, F., Winer, K., Weaire, D.: Computer generation of structural models of amorphous si and ge. Phys. Rev. Lett. 54, 1392\u20131395 (1985). doi:10.1103\/PhysRevLett.54.1392","journal-title":"Phys. Rev. Lett."},{"key":"2_CR144","doi-asserted-by":"publisher","first-page":"075312","DOI":"10.1103\/PhysRevB.86.075312","volume":"86","author":"K. Seino","year":"2012","unstructured":"Seino, K., Bechstedt, F., Kroll, P.: Tunneling of electrons between si nanocrystals embedded in a sio2 matrix. Phys. Rev. B 86, 075312 (2012). doi:10.1103\/PhysRevB.86.075312","journal-title":"Phys. Rev. B"},{"key":"2_CR145","doi-asserted-by":"publisher","first-page":"91","DOI":"10.1038\/nature03832","volume":"436","author":"S.C. Erwin","year":"2005","unstructured":"Erwin, S.C., Zu, L., Haftel, M.I., Efros, A.L., Kennedy, T.A., Norris, D.J.: Doping semiconductor nanocrystals. Nature 436, 91\u201394 (2005). doi:10.1038\/nature03832","journal-title":"Nature"},{"key":"2_CR146","doi-asserted-by":"publisher","first-page":"1776","DOI":"10.1126\/science.1143802","volume":"319","author":"D.J. Norris","year":"2008","unstructured":"Norris, D.J., Efros, A.L., Erwin, S.C.: Doped nanocrystals. Science 319, 1776\u20131779 (2008). doi:10.1126\/science.1143802","journal-title":"Science"},{"issue":"1","key":"2_CR147","doi-asserted-by":"publisher","first-page":"84","DOI":"10.1002\/cphc.201200738","volume":"14","author":"Y. Yu","year":"2013","unstructured":"Yu, Y., Bosoy, C.A., Hessel, C.M., Smilgies, D.M., Korgel, B.A.: Silicon nanocrystal superlattices. Chem. Phys. Chem. 14(1), 84\u201387 (2013). doi:10.1002\/cphc.201200738","journal-title":"Chem. Phys. Chem."},{"key":"2_CR148","doi-asserted-by":"publisher","first-page":"3677","DOI":"10.1021\/jz401964s","volume":"4","author":"Y. Yu","year":"2013","unstructured":"Yu, Y., Bosoy, C.A., Smilgies, D.M., Korgel, B.A.: Self-assembly and thermal stability of binary superlattices of gold and silicon nanocrystals. J. Phys. Chem. Lett. 4, 3677\u20133682 (2013). doi:10.1021\/jz401964s","journal-title":"J. Phys. Chem. Lett."},{"key":"2_CR149","doi-asserted-by":"publisher","first-page":"206805","DOI":"10.1103\/PhysRevLett.89.206805","volume":"89","author":"M. Fujii","year":"2002","unstructured":"Fujii, M., Mimura, A., Hayashi, S., Yamamoto, Y., Murakami, K.: Hyperfine structure of the electron spin resonance of phosphorus-doped si nanocrystals. Phys. Rev. Lett. 89, 206805 (2002). doi:10.1103\/PhysRevLett.89.206805","journal-title":"Phys. Rev. Lett."},{"key":"2_CR150","doi-asserted-by":"publisher","first-page":"161304","DOI":"10.1103\/PhysRevB.79.161304","volume":"79","author":"R.N. Pereira","year":"2009","unstructured":"Pereira, R.N., Stegner, A.R., Andlauer, T., Klein, K., Wiggers, H., Brandt, M.S., Stutzmann, M.: Dielectric screening versus quantum confinement of phosphorus donors in silicon nanocrystals investigated by magnetic resonance. Phys. Rev. B 79, 161304 (2009). doi:10.1103\/PhysRevB.79.161304","journal-title":"Phys. Rev. B"},{"issue":"2","key":"2_CR151","doi-asserted-by":"publisher","first-page":"103","DOI":"10.1038\/nnano.2008.400","volume":"4","author":"M.T. Bjork","year":"2009","unstructured":"Bjork, M.T., Schmid, H., Knoch, J., Riel, H., Riess, W.: Donor deactivation in silicon nanostructures. Nat. Nanotechnol. 4(2), 103\u2013107 (2009). doi:10.1038\/nnano.2008.400","journal-title":"Nat. Nanotechnol."},{"issue":"2","key":"2_CR152","doi-asserted-by":"publisher","first-page":"133","DOI":"10.1038\/nnano.2009.373","volume":"5","author":"M. Pierre","year":"2010","unstructured":"Pierre, M., Wacquez, R., Jehl, X., Sanquer, M., Vinet, M., Cueto, O.: Single-donor ionization energies in a nanoscale cmos channel. Nat. Nanotechnol. 5(2), 133\u2013137 (2010). doi:10.1038\/nnano.2009.373","journal-title":"Nat. Nanotechnol."},{"key":"2_CR153","doi-asserted-by":"publisher","first-page":"046802","DOI":"10.1103\/PhysRevLett.92.046802","volume":"92","author":"D.V. Melnikov","year":"2004","unstructured":"Melnikov, D.V., Chelikowsky, J.R.: Quantum confinement in phosphorus-doped silicon nanocrystals. Phys. Rev. Lett. 92, 046802 (2004). doi:10.1103\/PhysRevLett.92.046802","journal-title":"Phys. Rev. Lett."},{"key":"2_CR154","doi-asserted-by":"publisher","first-page":"045301","DOI":"10.1103\/PhysRevB.75.045301","volume":"75","author":"M. Diarra","year":"2007","unstructured":"Diarra, M., Niquet, Y.M., Delerue, C., Allan, G.: Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement. Phys. Rev. B 75, 045301 (2007). doi:10.1103\/PhysRevB.75.045301","journal-title":"Phys. Rev. B"},{"key":"2_CR155","doi-asserted-by":"publisher","first-page":"035312","DOI":"10.1103\/PhysRevB.89.035312","volume":"89","author":"Z. Ni","year":"2014","unstructured":"Ni, Z., Pi, X., Yang, D.: Doping si nanocrystals embedded in sio2 with p in the framework of density functional theory with p in the framework of density functional theory. Phys. Rev. B 89, 035312 (2014). doi:10.1103\/PhysRevB.89.035312","journal-title":"Phys. Rev. B"},{"issue":"2","key":"2_CR156","doi-asserted-by":"publisher","first-page":"594","DOI":"10.1021\/nl103621s","volume":"11","author":"M. Amato","year":"2011","unstructured":"Amato, M., Ossicini, S., Rurali, R.: Band-offset driven efficiency of the doping of sige core-shell nanowires. Nano Lett. 11(2), 594\u2013598 (2011). doi:10.1021\/nl103621s","journal-title":"Nano Lett."}],"container-title":["Lecture Notes in Physics","Defects and Impurities in Silicon Materials"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/978-4-431-55800-2_2","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,11,17]],"date-time":"2023-11-17T03:07:04Z","timestamp":1700190424000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/978-4-431-55800-2_2"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015]]},"ISBN":["9784431557999","9784431558002"],"references-count":156,"URL":"https:\/\/doi.org\/10.1007\/978-4-431-55800-2_2","relation":{},"ISSN":["0075-8450","1616-6361"],"issn-type":[{"type":"print","value":"0075-8450"},{"type":"electronic","value":"1616-6361"}],"subject":[],"published":{"date-parts":[[2015]]},"assertion":[{"value":"19 March 2016","order":1,"name":"first_online","label":"First Online","group":{"name":"ChapterHistory","label":"Chapter History"}}]}}