{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,2,9]],"date-time":"2024-02-09T11:58:48Z","timestamp":1707479928751},"reference-count":17,"publisher":"Springer Science and Business Media LLC","issue":"6","license":[{"start":{"date-parts":[[2010,8,12]],"date-time":"2010-08-12T00:00:00Z","timestamp":1281571200000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J Mater Sci: Mater Electron"],"published-print":{"date-parts":[[2011,6]]},"DOI":"10.1007\/s10854-010-0187-7","type":"journal-article","created":{"date-parts":[[2010,8,11]],"date-time":"2010-08-11T02:14:32Z","timestamp":1281492872000},"page":"626-630","source":"Crossref","is-referenced-by-count":8,"title":["Electrical properties of pulsed laser deposited Bi2Zn2\/3Nb4\/3O7 thin films for high K gate dielectric application"],"prefix":"10.1007","volume":"22","author":[{"given":"K.","family":"Sudheendran","sequence":"first","affiliation":[]},{"given":"K. C.","family":"James Raju","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2010,8,12]]},"reference":[{"key":"187_CR1","doi-asserted-by":"crossref","unstructured":"H. Iwai, Solid State Electron. 48, 497 (2003)","DOI":"10.3998\/ark.5550190.0004.a07"},{"key":"187_CR2","unstructured":"R. Chau, J. Kavalieros, B. Roberds, S. Schenkar, D. Lionborger, D. Barlage, B. Doyle, R. Arghvani, A. Murthy, G. Dewey, IEDM Tech. Dig. 45 (2000)"},{"key":"187_CR3","doi-asserted-by":"crossref","first-page":"094507","DOI":"10.1063\/1.2372313","volume":"100","author":"P Samanta","year":"2006","unstructured":"P. Samanta, T.Y. Man, Q. Zhang, C. Zhu, M. Chan, J. Appl. Phys. 100, 094507 (2006)","journal-title":"J. Appl. Phys."},{"key":"187_CR4","doi-asserted-by":"crossref","first-page":"5243","DOI":"10.1063\/1.1361065","volume":"89","author":"GD Wilk","year":"2001","unstructured":"G.D. Wilk, R.M. Wallace, J.M. Anthony, J. Appl. Phys. 89, 5243 (2001)","journal-title":"J. Appl. Phys."},{"key":"187_CR5","doi-asserted-by":"crossref","first-page":"1032","DOI":"10.1038\/35023243","volume":"406","author":"AI Kingon","year":"2000","unstructured":"A.I. Kingon, J.-P. Maria, S.K. Streiffer, Nature 406, 1032 (2000)","journal-title":"Nature"},{"key":"187_CR6","doi-asserted-by":"crossref","first-page":"53","DOI":"10.1007\/s11837-001-0105-9","volume":"53","author":"RK Sharma","year":"2001","unstructured":"R.K. Sharma, A. Kumar, J.M. Anthony, JOM 53, 53 (2001)","journal-title":"JOM"},{"issue":"1","key":"187_CR7","doi-asserted-by":"crossref","first-page":"83","DOI":"10.1557\/JMR.2001.0016","volume":"16","author":"H Wang","year":"2001","unstructured":"H. Wang, X. Yao, J. Mater. Res. 16(1), 83 (2001)","journal-title":"J. Mater. Res."},{"key":"187_CR8","doi-asserted-by":"crossref","first-page":"19","DOI":"10.1080\/00150199708260478","volume":"195","author":"H Wang","year":"1997","unstructured":"H. Wang, X. Wang, X. Yao, Ferroelectrics 195, 19 (1997)","journal-title":"Ferroelectrics"},{"key":"187_CR9","doi-asserted-by":"crossref","first-page":"485","DOI":"10.1007\/s00339-008-4924-1","volume":"95","author":"K Sudheendran","year":"2009","unstructured":"K. Sudheendran, M. Ghanashyam Krishna, K.C. James Raju, Appl. Phys. A 95, 485 (2009)","journal-title":"Appl. Phys. A"},{"key":"187_CR10","doi-asserted-by":"crossref","first-page":"173","DOI":"10.1080\/10584580500414192","volume":"74","author":"SA Lee","year":"2005","unstructured":"S.A. Lee, S.Y. Jeong, J.Y. Hwang, J.P. Kim, M.G. Ha, C.R. Chi, Integrated ferroelectrics 74, 173 (2005)","journal-title":"Integrated ferroelectrics"},{"key":"187_CR11","doi-asserted-by":"crossref","first-page":"207","DOI":"10.1016\/j.apsusc.2004.02.040","volume":"230","author":"S Chopra","year":"2004","unstructured":"S. Chopra, S. Sharma, T.C. Goel, R.G. Mendirata, Appl. Surf. Sci. 230, 207 (2004)","journal-title":"Appl. Surf. Sci."},{"key":"187_CR12","doi-asserted-by":"crossref","first-page":"1351","DOI":"10.1134\/S1063782608110213","volume":"42","author":"EA Bobrova","year":"2009","unstructured":"E.A. Bobrova, N.M. Omeljanovskya, Semiconductors 42, 1351 (2009)","journal-title":"Semiconductors"},{"key":"187_CR13","doi-asserted-by":"crossref","first-page":"841","DOI":"10.1016\/0038-1101(95)00395-9","volume":"39","author":"SC Rustagi","year":"1996","unstructured":"S.C. Rustagi, Z.O. Mohsen, S. Chandra, A. Chand, Solid State Electron. 39, 841 (1996)","journal-title":"Solid State Electron."},{"key":"187_CR14","doi-asserted-by":"crossref","first-page":"045401","DOI":"10.1088\/0022-3727\/42\/4\/045401","volume":"42","author":"K Venkata Saravanan","year":"2009","unstructured":"K. Venkata Saravanan, K. Sudheendran, M. Ghanashyam Krishna, K.C. James Raju, J. Phys. D Appl. Phys. 42, 045401 (2009)","journal-title":"J. Phys. D Appl. Phys."},{"key":"187_CR15","doi-asserted-by":"crossref","first-page":"S787","DOI":"10.1007\/s003390051530","volume":"69","author":"V Craciun","year":"1999","unstructured":"V. Craciun, A. Srivastava, J.M. Howard, J.M. Howard, R.K. Singh, J. Perriere, Appl. Phys. A 69, S787 (1999)","journal-title":"Appl. Phys. A"},{"key":"187_CR16","doi-asserted-by":"crossref","first-page":"262904","DOI":"10.1063\/1.3173199","volume":"94","author":"S Aberman","year":"2009","unstructured":"S. Aberman, O. Bethge, C. Henkel, E. Bertagnolli, Appl. Phys. Lett. 94, 262904 (2009)","journal-title":"Appl. Phys. Lett."},{"key":"187_CR17","doi-asserted-by":"crossref","first-page":"426","DOI":"10.1063\/1.1483379","volume":"92","author":"A Dimoulas","year":"2002","unstructured":"A. Dimoulas, G. Vellianitis, A. Travlos, V.S. Loannou, A.G. Nassiopoulou, J. Appl. Phys. 92, 426 (2002)","journal-title":"J. Appl. Phys."}],"container-title":["Journal of Materials Science: Materials in Electronics"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s10854-010-0187-7.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s10854-010-0187-7\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s10854-010-0187-7","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T11:50:01Z","timestamp":1559389801000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s10854-010-0187-7"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,8,12]]},"references-count":17,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2011,6]]}},"alternative-id":["187"],"URL":"https:\/\/doi.org\/10.1007\/s10854-010-0187-7","relation":{},"ISSN":["0957-4522","1573-482X"],"issn-type":[{"value":"0957-4522","type":"print"},{"value":"1573-482X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2010,8,12]]}}}