{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,4]],"date-time":"2022-04-04T11:52:14Z","timestamp":1649073134728},"reference-count":6,"publisher":"Elsevier BV","issue":"1-5","license":[{"start":{"date-parts":[[1987,8,1]],"date-time":"1987-08-01T00:00:00Z","timestamp":554774400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Microprocessing and Microprogramming"],"published-print":{"date-parts":[[1987,8]]},"DOI":"10.1016\/0165-6074(87)90014-7","type":"journal-article","created":{"date-parts":[[2003,9,3]],"date-time":"2003-09-03T17:14:48Z","timestamp":1062609288000},"page":"31-38","source":"Crossref","is-referenced-by-count":0,"title":["GaAs implementation of a 32-bit RISC"],"prefix":"10.1016","volume":"21","author":[{"given":"J.H","family":"Lane","sequence":"first","affiliation":[]},{"given":"R.A","family":"Niederland","sequence":"additional","affiliation":[]},{"given":"T.L","family":"Rasset","sequence":"additional","affiliation":[]},{"given":"W.A","family":"Geideman","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"issue":"No. 12","key":"10.1016\/0165-6074(87)90014-7_BIB1","doi-asserted-by":"crossref","first-page":"30","DOI":"10.1109\/MSPEC.1983.6370057","article-title":"Integrated Circuits: the case for Gallium Arsenide","volume":"Vol. 20","author":"Eden","year":"1983","journal-title":"IEEE Spectrum"},{"key":"10.1016\/0165-6074(87)90014-7_BIB2","series-title":"Proc. IEEE ICCD 84","first-page":"260","article-title":"Design and Performance Tradeoffs in the Use of VLSI and Gallium Arsenide in High Clockrate Signal Processors","author":"Gilbert","year":"1984"},{"issue":"No. 3","key":"10.1016\/0165-6074(87)90014-7_BIB3","doi-asserted-by":"crossref","first-page":"30","DOI":"10.1109\/MC.1986.1663177","article-title":"An Introduction to GaAs Microprocessor Architecture for VLSI","volume":"Vol. 19","author":"Milutinovic","year":"1986","journal-title":"Computer"},{"key":"10.1016\/0165-6074(87)90014-7_BIB4","doi-asserted-by":"crossref","first-page":"21","DOI":"10.1109\/EDL.1984.25817","article-title":"Double-Implanted GaAs Complementary JFETS","volume":"Vol. EDL-5","author":"Zuleeg","year":"1984","journal-title":"IEEE Electron Devices Letters"},{"key":"10.1016\/0165-6074(87)90014-7_BIB5","doi-asserted-by":"crossref","first-page":"628","DOI":"10.1109\/T-ED.1978.19147","article-title":"Femto-Joule High-Speed Planar GaAs E-JFET Logic","volume":"Vol. ED-25","author":"Zuleeg","year":"1978","journal-title":"IEEE Trans. on Electron Devices"},{"key":"10.1016\/0165-6074(87)90014-7_BIB6","article-title":"Radiation Effects in GaAs Integrated Circuits","volume":"Vol. 11","author":"Zuleeg","year":"1985"}],"container-title":["Microprocessing and Microprogramming"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:0165607487900147?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:0165607487900147?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,2,25]],"date-time":"2019-02-25T09:52:02Z","timestamp":1551088322000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/0165607487900147"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1987,8]]},"references-count":6,"journal-issue":{"issue":"1-5","published-print":{"date-parts":[[1987,8]]}},"alternative-id":["0165607487900147"],"URL":"https:\/\/doi.org\/10.1016\/0165-6074(87)90014-7","relation":{},"ISSN":["0165-6074"],"issn-type":[{"value":"0165-6074","type":"print"}],"subject":[],"published":{"date-parts":[[1987,8]]}}}