{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,3,31]],"date-time":"2022-03-31T17:53:44Z","timestamp":1648749224136},"reference-count":12,"publisher":"Elsevier BV","issue":"1","license":[{"start":{"date-parts":[[1991,10,1]],"date-time":"1991-10-01T00:00:00Z","timestamp":686275200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Future Generation Computer Systems"],"published-print":{"date-parts":[[1991,10]]},"DOI":"10.1016\/0167-739x(91)90011-l","type":"journal-article","created":{"date-parts":[[2003,9,3]],"date-time":"2003-09-03T15:40:25Z","timestamp":1062603625000},"page":"3-13","source":"Crossref","is-referenced-by-count":0,"title":["Microelectronics trends"],"prefix":"10.1016","volume":"7","author":[{"given":"L","family":"Baldi","sequence":"first","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/0167-739X(91)90011-L_BIB1","series-title":"Tech. Digest of 1975 Internat. Electron Devices Meeting","first-page":"11","article-title":"Progress in digital integrated electronics","author":"Moore","year":"1975"},{"key":"10.1016\/0167-739X(91)90011-L_BIB2","series-title":"Techn. Digest of 1990 Symp. on VLSI Techn.","first-page":"51","article-title":"A 26ps self-aligned epitaxial silicon base bipolar technology","author":"Confort","year":"1990"},{"key":"10.1016\/0167-739X(91)90011-L_BIB3","series-title":"Techn. Digest of 1990 Symp. on VLSI Techn.","first-page":"49","article-title":"63\u201375 GHz fT SiGe-base heterojunction bipolar technology","author":"Patton","year":"1990"},{"key":"10.1016\/0167-739X(91)90011-L_BIB4","series-title":"Techn. Digest of 1987 Internat. Electron Devices Meeting","first-page":"10","article-title":"An overview of epitaxial GaAs on Si technology","author":"Cho","year":"1987"},{"key":"10.1016\/0167-739X(91)90011-L_BIB5","unstructured":"I.C.E., Mid-term 1990 status and forecast of the IC industry."},{"key":"10.1016\/0167-739X(91)90011-L_BIB6","first-page":"107","article-title":"Optical lithography for half-micron and sub half-micron resolution","volume":"Vol. 920","author":"Vollenbroek","year":"1988"},{"key":"10.1016\/0167-739X(91)90011-L_BIB7","doi-asserted-by":"crossref","first-page":"1359","DOI":"10.1109\/T-ED.1980.20040","article-title":"Design and characterization of Lightly Doped Drain-Source (LDD) insulated gate field-effect transistor","author":"Ogura","year":"1980","journal-title":"IEEE Trans. Electron Devices ED-27"},{"key":"10.1016\/0167-739X(91)90011-L_BIB8","doi-asserted-by":"crossref","first-page":"256","DOI":"10.1109\/JSSC.1974.1050511","article-title":"Design of ion implanted MOSFET's with very small physical dimensions","author":"Dennard","year":"1974","journal-title":"IEEE J. Solid State Circuits SC-9"},{"key":"10.1016\/0167-739X(91)90011-L_BIB9","doi-asserted-by":"crossref","first-page":"1409","DOI":"10.1109\/T-ED.1980.20049","article-title":"Refractory silicides of titanium and tantalum for low resistivity gates and interconnects","author":"Murarka","year":"1980","journal-title":"IEEE Trans. Electron Devices ED-27"},{"key":"10.1016\/0167-739X(91)90011-L_BIB10","series-title":"Techn. Digest of 1981 Internat. Electron Devices Meeting","first-page":"647","article-title":"An optically designed process for submicron MOSFETs","author":"Shibata","year":"1981"},{"key":"10.1016\/0167-739X(91)90011-L_BIB11","series-title":"Techn. Digest of 1989 Symp. on VLSI Techn.","first-page":"53","article-title":"The guiding principle for BiCMOS scaling in ULSI's","author":"Shukuri","year":"1989"},{"key":"10.1016\/0167-739X(91)90011-L_BIB12","series-title":"Techn. Digest of 1989 Symp. on VLSI Techn.","first-page":"55","article-title":"A supply voltage design for half \u03bcm BiCMOS gates","author":"Momose","year":"1989"}],"container-title":["Future Generation Computer Systems"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:0167739X9190011L?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:0167739X9190011L?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,2,25]],"date-time":"2019-02-25T12:50:10Z","timestamp":1551099010000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/0167739X9190011L"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1991,10]]},"references-count":12,"journal-issue":{"issue":"1","published-print":{"date-parts":[[1991,10]]}},"alternative-id":["0167739X9190011L"],"URL":"https:\/\/doi.org\/10.1016\/0167-739x(91)90011-l","relation":{},"ISSN":["0167-739X"],"issn-type":[{"value":"0167-739X","type":"print"}],"subject":[],"published":{"date-parts":[[1991,10]]}}}