{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,7,6]],"date-time":"2024-07-06T00:02:50Z","timestamp":1720224170994},"reference-count":17,"publisher":"Elsevier BV","issue":"8","license":[{"start":{"date-parts":[[2006,8,1]],"date-time":"2006-08-01T00:00:00Z","timestamp":1154390400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2006,8,1]],"date-time":"2006-08-01T00:00:00Z","timestamp":1154390400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2006,8,1]],"date-time":"2006-08-01T00:00:00Z","timestamp":1154390400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2006,8,1]],"date-time":"2006-08-01T00:00:00Z","timestamp":1154390400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2006,8,1]],"date-time":"2006-08-01T00:00:00Z","timestamp":1154390400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2006,8,1]],"date-time":"2006-08-01T00:00:00Z","timestamp":1154390400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2006,8,1]],"date-time":"2006-08-01T00:00:00Z","timestamp":1154390400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2006,8]]},"DOI":"10.1016\/j.mejo.2005.10.013","type":"journal-article","created":{"date-parts":[[2005,12,15]],"date-time":"2005-12-15T17:59:32Z","timestamp":1134669572000},"page":"778-782","update-policy":"http:\/\/dx.doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":2,"title":["Low voltage CCD image sensor with optimized reset operation"],"prefix":"10.1016","volume":"37","author":[{"given":"Sangsik","family":"Park","sequence":"first","affiliation":[]},{"given":"Hyungsoo","family":"Uh","sequence":"additional","affiliation":[]},{"given":"Soeun","family":"Park","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.mejo.2005.10.013_bib1","doi-asserted-by":"crossref","first-page":"1689","DOI":"10.1109\/16.628824","article-title":"CMOS image sensor: electronic camera-on-a-chip","volume":"ED-44","author":"Fossum","year":"1997","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2005.10.013_bib2","first-page":"176","article-title":"Hot-electron affects in MOSFET's","author":"Hu","year":"1983","journal-title":"IEDM Tech. Dig."},{"key":"10.1016\/j.mejo.2005.10.013_bib3","doi-asserted-by":"crossref","first-page":"787","DOI":"10.1109\/16.998585","article-title":"Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime","volume":"ED-49","author":"Driussi","year":"2002","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2005.10.013_bib4","doi-asserted-by":"crossref","first-page":"1112","DOI":"10.1109\/16.214737","article-title":"Mechanisms for hot carrier induced degradation in reoxidized nitrided oxide n-MOSFET's under combined AC\/DC stressing","volume":"ED-40","author":"Ma","year":"1993","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2005.10.013_bib5","first-page":"375","article-title":"Hot electron induced MOSFET degradation\u2014model, monitor, and improvement","volume":"ED-32","author":"Hu","year":"1985","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2005.10.013_bib6","doi-asserted-by":"crossref","first-page":"267","DOI":"10.1109\/55.55276","article-title":"The role of electron trap creation in enhanced hot carrier degradation during AC stress","volume":"11","author":"Mistry","year":"1990","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2005.10.013_bib7","doi-asserted-by":"crossref","first-page":"1869","DOI":"10.1109\/16.57138","article-title":"The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors","volume":"37","author":"Doyle","year":"1990","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2005.10.013_bib8","doi-asserted-by":"crossref","first-page":"232","DOI":"10.1109\/55.700","article-title":"Hot carrier effects in n-channel MOS transistors under alternate stress conditions","volume":"9","author":"Bellens","year":"1988","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2005.10.013_bib9","doi-asserted-by":"crossref","first-page":"1431","DOI":"10.1063\/1.99690","article-title":"Relationship between hole trapping and interface state generation in metal-oxide silicon structures","volume":"52","author":"Wang","year":"1988","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mejo.2005.10.013_bib10","doi-asserted-by":"crossref","first-page":"1476","DOI":"10.1109\/16.2580","article-title":"Dynamic stress experiments for understanding hot carrier degradation phenomena","volume":"ED-35","author":"Weber","year":"1988","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2005.10.013_bib11","doi-asserted-by":"crossref","first-page":"333","DOI":"10.1109\/EDL.1987.26650","article-title":"Hot carrier induced MOSFET degradation under AC stress","volume":"8","author":"Choi","year":"1987","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2005.10.013_bib12","doi-asserted-by":"crossref","first-page":"237","DOI":"10.1109\/EDL.1987.26615","article-title":"Dynamic channel hot carrier degradation of NMOS transistors by enhanced electron-hole injection into the oxide","volume":"8","author":"Doyle","year":"1987","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2005.10.013_bib13","first-page":"547","article-title":"High sensitivity CCD image sensor using capacitive inverted feedback source follower circuit","volume":"41","author":"Park","year":"2002","journal-title":"J. Korean Phys. Soc."},{"key":"10.1016\/j.mejo.2005.10.013_bib14","doi-asserted-by":"crossref","first-page":"459","DOI":"10.1109\/16.2480","article-title":"Conduction and charge trapping in polysilicon-silicon nitride-oxide-silicon structures under positive gate bias","volume":"ED-35","author":"Aminzadeh","year":"1988","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2005.10.013_bib15","doi-asserted-by":"crossref","first-page":"97","DOI":"10.1109\/55.981318","article-title":"Current transport in metal\/hafnium oxide\/silicon structure","volume":"23","author":"Zhu","year":"2002","journal-title":"IEEE Trans. Electron Devices Lett."},{"key":"10.1016\/j.mejo.2005.10.013_bib16","unstructured":"Brown W., Brewer J., Nonvolatile Semiconductor Memory Technology, Chapter.1"},{"key":"10.1016\/j.mejo.2005.10.013_bib17","series-title":"Fundamentals of Modern VLSI Devices","author":"Yuan Taur","year":"1998"}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269205003770?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269205003770?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,7,5]],"date-time":"2024-07-05T23:06:06Z","timestamp":1720220766000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026269205003770"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2006,8]]},"references-count":17,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2006,8]]}},"alternative-id":["S0026269205003770"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2005.10.013","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2006,8]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Low voltage CCD image sensor with optimized reset operation","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2005.10.013","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2005 Published by Elsevier Ltd.","name":"copyright","label":"Copyright"}]}}