{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,20]],"date-time":"2026-01-20T10:11:19Z","timestamp":1768903879541,"version":"3.49.0"},"reference-count":13,"publisher":"Elsevier BV","issue":"10","license":[{"start":{"date-parts":[[2008,10,1]],"date-time":"2008-10-01T00:00:00Z","timestamp":1222819200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2008,10,1]],"date-time":"2008-10-01T00:00:00Z","timestamp":1222819200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2008,10,1]],"date-time":"2008-10-01T00:00:00Z","timestamp":1222819200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2008,10,1]],"date-time":"2008-10-01T00:00:00Z","timestamp":1222819200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2008,10,1]],"date-time":"2008-10-01T00:00:00Z","timestamp":1222819200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2008,10,1]],"date-time":"2008-10-01T00:00:00Z","timestamp":1222819200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2008,10,1]],"date-time":"2008-10-01T00:00:00Z","timestamp":1222819200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"funder":[{"DOI":"10.13039\/501100001459","name":"Ministry of Education - Singapore","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100001459","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2008,10]]},"DOI":"10.1016\/j.mejo.2008.01.084","type":"journal-article","created":{"date-parts":[[2008,3,19]],"date-time":"2008-03-19T05:37:05Z","timestamp":1205905025000},"page":"1189-1194","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":5,"title":["Electric field-enhanced metal-induced lateral crystallization and P-channel poly-Si TFTs fabricated by it"],"prefix":"10.1016","volume":"39","author":[{"given":"Xiangbin","family":"Zeng","sequence":"first","affiliation":[]},{"given":"Huijuan","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Xiaowei","family":"Sun","sequence":"additional","affiliation":[]},{"given":"Junfeng","family":"Li","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"issue":"6","key":"10.1016\/j.mejo.2008.01.084_bib1","doi-asserted-by":"crossref","first-page":"767","DOI":"10.1063\/1.118254","article-title":"Microstructural characterization of solid-phase crystallized amorphous silicon films recrystallized using an excimer laser","volume":"70","author":"Giust","year":"1997","journal-title":"J. Appl. Phys. Lett."},{"issue":"8B","key":"10.1016\/j.mejo.2008.01.084_bib2","first-page":"913","article-title":"Rapid joule heating of metal films used to fabricate polycrystalline silicon thin film transistors","volume":"41","author":"Yoshiyasu","year":"2002","journal-title":"J. Appl. Phys."},{"issue":"4B","key":"10.1016\/j.mejo.2008.01.084_bib3","first-page":"2012","article-title":"New excimer laser recrystallization of poly-Si for effective grain growth and grain boundary arrangement","volume":"39","author":"Jae-Hong","year":"2000","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.mejo.2008.01.084_bib4","doi-asserted-by":"crossref","first-page":"172","DOI":"10.1889\/1.1833987","article-title":"Low-temperature poly-Si TFT technology","author":"Ibaraki","year":"1999","journal-title":"SID 99 Dig."},{"key":"10.1016\/j.mejo.2008.01.084_bib5","doi-asserted-by":"crossref","first-page":"273","DOI":"10.1088\/0953-8984\/8\/3\/007","article-title":"Excimer laser and rapid thermal annealing stimulation of solid-phase nucleation and crystallization in amorphous silicon films on glass substrate","volume":"8","author":"Efremov","year":"1996","journal-title":"J. Phys. Condens. Matter"},{"key":"10.1016\/j.mejo.2008.01.084_bib6","doi-asserted-by":"crossref","first-page":"39","DOI":"10.1016\/S0040-6090(00)01625-4","article-title":"Advanced excimer laser crystallization techniques","volume":"383","author":"Mariucci","year":"2001","journal-title":"J. Thin Solid Films"},{"issue":"12A","key":"10.1016\/j.mejo.2008.01.084_bib7","first-page":"6624","article-title":"A new approach for form polycrystalline silicon by excimer laser irradiation with a wide range of energies","volume":"38","author":"Kito","year":"1999","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.mejo.2008.01.084_bib8","doi-asserted-by":"crossref","first-page":"845","DOI":"10.1109\/16.918227","article-title":"Polysilicon TFT technology for active matrix OLED displays","volume":"48","author":"Stewart","year":"2001","journal-title":"J. IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2008.01.084_bib9","series-title":"SID2001 Symposium Proceedings, San Jose, CA","first-page":"242","article-title":"Society for information display 2001","author":"Kanzaki","year":"2001"},{"issue":"8","key":"10.1016\/j.mejo.2008.01.084_bib10","doi-asserted-by":"crossref","first-page":"3648","DOI":"10.1063\/1.352308","article-title":"Comparative study of thin poly-Si films grown by ion implantation and annealing with spectroscopic ellipsometry, Raman spectroscopy, and electron microscopy","volume":"72","author":"Boultadakis","year":"1992","journal-title":"J. App. Phys."},{"issue":"7","key":"10.1016\/j.mejo.2008.01.084_bib11","first-page":"948","article-title":"Dislocation etch for (100) planes in silicon","volume":"119","author":"Secco","year":"1972","journal-title":"Issue Series Title: J. Electrochem. Soc."},{"issue":"1\u20132","key":"10.1016\/j.mejo.2008.01.084_bib12","first-page":"34","article-title":"Metal-induced crystallization of amorphous silicon","volume":"383","author":"Soo","year":"2001","journal-title":"J. Thin Solid Films"},{"key":"10.1016\/j.mejo.2008.01.084_bib13","series-title":"Thin Film Transistors","author":"Paul Andry","year":"2003"}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269208001092?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269208001092?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,7,5]],"date-time":"2024-07-05T08:04:20Z","timestamp":1720166660000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026269208001092"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2008,10]]},"references-count":13,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2008,10]]}},"alternative-id":["S0026269208001092"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2008.01.084","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2008,10]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Electric field-enhanced metal-induced lateral crystallization and P-channel poly-Si TFTs fabricated by it","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2008.01.084","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2008 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}]}}