{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,14]],"date-time":"2026-03-14T02:54:37Z","timestamp":1773456877868,"version":"3.50.1"},"reference-count":22,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2026,7]]},"DOI":"10.1016\/j.mejo.2026.107146","type":"journal-article","created":{"date-parts":[[2026,3,5]],"date-time":"2026-03-05T00:50:23Z","timestamp":1772671823000},"page":"107146","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["A buffer layer based hardening strategy for SEB mitigation in high-voltage MOSFETs for space applications"],"prefix":"10.1016","volume":"173","author":[{"given":"Yanfei","family":"Zhang","sequence":"first","affiliation":[]},{"given":"Xueqin","family":"Gong","sequence":"additional","affiliation":[]},{"given":"Ge","family":"Zhao","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6855-776X","authenticated-orcid":false,"given":"Xiaowu","family":"Cai","sequence":"additional","affiliation":[]},{"given":"Mengxin","family":"Liu","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"issue":"6","key":"10.1016\/j.mejo.2026.107146_bib1","doi-asserted-by":"crossref","first-page":"2921","DOI":"10.1109\/23.556886","article-title":"First observation of proton induced power MOSFET burnout in space: the CRUX experiment on APEX","volume":"43","author":"Adophsen","year":"1996","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"10.1016\/j.mejo.2026.107146_bib2","series-title":"2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology","article-title":"Catastrophic failure of silicon power MOS in space","author":"Galloway","year":"2012"},{"issue":"6","key":"10.1016\/j.mejo.2026.107146_bib3","doi-asserted-by":"crossref","first-page":"2181","DOI":"10.1109\/TNS.2007.910873","article-title":"Enhanced degradation in power MOSFET devices due to heavy ion irradiation","volume":"54","author":"Felix","year":"2007","journal-title":"IEEE Trans. Nucl. Sci."},{"issue":"6","key":"10.1016\/j.mejo.2026.107146_bib4","doi-asserted-by":"crossref","first-page":"1710","DOI":"10.1109\/TNS.1986.4334670","article-title":"Burnout of power MOS transistors with heavy ion of Californium-252","volume":"33","author":"Waskiewicz","year":"1986","journal-title":"IEEE Trans. Nucl. Sci."},{"issue":"6","key":"10.1016\/j.mejo.2026.107146_bib5","doi-asserted-by":"crossref","first-page":"1225","DOI":"10.1109\/TNS.1987.4337465","article-title":"Analytical model for single event burnout of power MOSFETs","volume":"34","author":"Hohl","year":"1987","journal-title":"IEEE Trans. Nucl. Sci."},{"issue":"5","key":"10.1016\/j.mejo.2026.107146_bib6","doi-asserted-by":"crossref","first-page":"1001","DOI":"10.1109\/16.210211","article-title":"Simulating single-event burnout of n-Channel power MOSFETs","volume":"40","author":"Johnson","year":"1993","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"6","key":"10.1016\/j.mejo.2026.107146_bib7","doi-asserted-by":"crossref","first-page":"2554","DOI":"10.1109\/TNS.2007.910869","article-title":"Effect of buffer layer on single-event burnout of power DMOSFETs","volume":"54","author":"Liu","year":"2007","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"10.1016\/j.mejo.2026.107146_bib8","unstructured":"Yunpeng Jia et al., Effect of grade doping buffer layer on SEE failure in VDMOSFET, 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)."},{"issue":"6","key":"10.1016\/j.mejo.2026.107146_bib9","doi-asserted-by":"crossref","first-page":"2488","DOI":"10.1109\/TNS.2007.910851","article-title":"Mapping of single event burnout in power MOSFETs","volume":"54","author":"Haran","year":"2007","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"10.1016\/j.mejo.2026.107146_bib10","series-title":"2009 European Conference on Radiation and Its Effects on Components and Systems","article-title":"Investigation of single event burnout sensitive depth in power MOSFETS","author":"Darracq","year":"2009"},{"key":"10.1016\/j.mejo.2026.107146_bib11","doi-asserted-by":"crossref","DOI":"10.1016\/j.microrel.2023.115309","article-title":"Sensitivity study of super-junction power MOSFETs by spatial and depth resolved heavy ion SEE mapping with various bias, LETs and ion ranges","volume":"155","author":"Gerold","year":"2024","journal-title":"Microelectron. Reliab."},{"issue":"5","key":"10.1016\/j.mejo.2026.107146_bib12","doi-asserted-by":"crossref","first-page":"611","DOI":"10.1109\/TNS.2021.3053168","article-title":"Analysis of SEGR in silicon planar gate super-junction power MOSFETs","volume":"68","author":"Muthuseenu","year":"2021","journal-title":"IEEE Trans. Nucl. Sci."},{"issue":"8","key":"10.1016\/j.mejo.2026.107146_bib13","doi-asserted-by":"crossref","first-page":"4906","DOI":"10.1109\/TED.2024.3418302","article-title":"Drain-leakage degradation during single-event burnout experiments in N-Channel power VDMOS transistors","volume":"71","author":"Liu","year":"2024","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"7","key":"10.1016\/j.mejo.2026.107146_bib14","doi-asserted-by":"crossref","first-page":"3489","DOI":"10.1109\/TED.2025.3572876","article-title":"Analysis of single-event leakage current degradation induced by heavy-ion irradiation in SiC MOSFETs","volume":"72","author":"Wu","year":"2025","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"9","key":"10.1016\/j.mejo.2026.107146_bib15","doi-asserted-by":"crossref","first-page":"3698","DOI":"10.1109\/TED.2020.3008398","article-title":"Impact of varied buffer layer designs on single-event response of 1.2-kV SiC power MOSFETs","volume":"67","author":"Lu","year":"2020","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"8","key":"10.1016\/j.mejo.2026.107146_bib16","doi-asserted-by":"crossref","first-page":"2368","DOI":"10.1109\/TNS.2025.3561583","article-title":"Single Event Effects of SiC Power MOSFETs: from Neutron Interaction to Destruction at the Die Level","volume":"72","author":"Coq Germanicus","year":"2025","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"10.1016\/j.mejo.2026.107146_bib17","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2023.105893","article-title":"Machine learning based prediction model for single event burnout hardening design of power MOSFETs","volume":"139","author":"Liao","year":"2023","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107146_bib18","series-title":"Fundamentals of Power Semiconductor Devices","first-page":"550","author":"Jayant Baliga","year":"2019"},{"issue":"6","key":"10.1016\/j.mejo.2026.107146_bib19","doi-asserted-by":"crossref","first-page":"2167","DOI":"10.1109\/23.340558","article-title":"Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs","volume":"41","author":"Dachs","year":"1994","journal-title":"IEEE Trans. Nucl. Sci."},{"issue":"5","key":"10.1016\/j.mejo.2026.107146_bib20","doi-asserted-by":"crossref","first-page":"2551","DOI":"10.1109\/TED.2019.2908970","article-title":"A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility","volume":"66","author":"Zhou","year":"2019","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107146_bib21","series-title":"Sentaurus\u2122 Device User GuideVersion O-2018.06","year":"2018"},{"issue":"3","key":"10.1016\/j.mejo.2026.107146_bib22","doi-asserted-by":"crossref","first-page":"713","DOI":"10.1109\/TED.2017.2658344","article-title":"Superjunction power devices, history, development, and future prospects","volume":"64","author":"Udrea","year":"2017","journal-title":"IEEE Trans. Electron. Dev."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126001025?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126001025?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2026,3,14]],"date-time":"2026-03-14T01:57:19Z","timestamp":1773453439000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S1879239126001025"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,7]]},"references-count":22,"alternative-id":["S1879239126001025"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107146","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2026,7]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"A buffer layer based hardening strategy for SEB mitigation in high-voltage MOSFETs for space applications","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107146","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2026 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}],"article-number":"107146"}}