{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,15]],"date-time":"2026-05-15T08:14:32Z","timestamp":1778832872073,"version":"3.51.4"},"reference-count":40,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62404180"],"award-info":[{"award-number":["62404180"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62474139"],"award-info":[{"award-number":["62474139"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62104186"],"award-info":[{"award-number":["62104186"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100017592","name":"Key Science and Technology Program of Shaanxi Province","doi-asserted-by":"publisher","award":["2025 ZC-KJXX-66"],"award-info":[{"award-number":["2025 ZC-KJXX-66"]}],"id":[{"id":"10.13039\/501100017592","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100016112","name":"Xi'an Science and Technology Association","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100016112","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002858","name":"China Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2025MD783816"],"award-info":[{"award-number":["2025MD783816"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100013093","name":"Science and Technology Planning Project of Shenzhen Municipality","doi-asserted-by":"publisher","award":["2023JH-GXRC-012"],"award-info":[{"award-number":["2023JH-GXRC-012"]}],"id":[{"id":"10.13039\/501100013093","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100013102","name":"Shanghai City Youth Science and Technology Star Project","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100013102","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2026,7]]},"DOI":"10.1016\/j.mejo.2026.107173","type":"journal-article","created":{"date-parts":[[2026,3,13]],"date-time":"2026-03-13T00:31:41Z","timestamp":1773361901000},"page":"107173","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["Research of Schottky diode based on Ga2O3\/SiC pn heterojunction RESURF structure"],"prefix":"10.1016","volume":"173","author":[{"given":"Jichao","family":"Hu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaodong","family":"Yang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Congshan","family":"Sun","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yao","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xi","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaomin","family":"He","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Linpeng","family":"Dong","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bo","family":"Peng","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Daohua","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuan","family":"Yang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"issue":"5","key":"10.1016\/j.mejo.2026.107173_bib1","doi-asserted-by":"crossref","first-page":"455","DOI":"10.1109\/55.43098","article-title":"Power semiconductor device figure of merit for high-frequency applications","volume":"10","author":"Baliga","year":"1989","journal-title":"Electron Device Letters IEEE"},{"issue":"7","key":"10.1016\/j.mejo.2026.107173_bib2","doi-asserted-by":"crossref","first-page":"3207","DOI":"10.1039\/D1NJ05245D","article-title":"Mixed phases of GaOOH\/\u03b2-Ga2O3 and \u03b1-Ga2O3\/\u03b2-Ga2O3 prepared by high energy ball milling as active photocatalysts for CO2 reduction with water","volume":"46","author":"Aoki","year":"2022","journal-title":"New J. Chem."},{"issue":"16","key":"10.1016\/j.mejo.2026.107173_bib3","article-title":"Yuichi oshima. Materials issues and devices of \u03b1- and \u03b2-Ga2O3","volume":"126","author":"Elaheh","year":"2019","journal-title":"J. Appl. Phys."},{"issue":"5","key":"10.1016\/j.mejo.2026.107173_bib4","doi-asserted-by":"crossref","first-page":"5157","DOI":"10.1109\/TPEL.2019.2946367","article-title":"Progress of ultra-wide bandgap Ga2O3 semiconductor materials in power MOSFETs","volume":"35","author":"Zhang","year":"2020","journal-title":"IEEE Trans. Power Electron."},{"key":"10.1016\/j.mejo.2026.107173_bib5","article-title":"Rhodium-Alloyed beta gallium oxide materials: new type ternary ultra-wide bandgap semiconductors","volume":"11","author":"Zha","year":"2025","journal-title":"Adv. Electron. Mater."},{"issue":"4","key":"10.1016\/j.mejo.2026.107173_bib6","doi-asserted-by":"crossref","DOI":"10.1063\/5.0185305","article-title":"Ultra)wide bandgap semiconductor heterostructures for electronics cooling","volume":"11","author":"Cheng","year":"2024","journal-title":"Appl. Phys. Rev."},{"issue":"1","key":"10.1016\/j.mejo.2026.107173_bib7","doi-asserted-by":"crossref","first-page":"626","DOI":"10.1109\/JESTPE.2019.2953730","article-title":"A survey of EMI research in power electronics systems with wide-bandgap semiconductor devices","volume":"8","author":"Zhang","year":"2020","journal-title":"IEEE J. Emerg. Sel. Top. Power Electron."},{"issue":"44","key":"10.1016\/j.mejo.2026.107173_bib8","first-page":"3002","article-title":"A review of gallium oxide-based power schottky barrier diodes","volume":"55","author":"Xueqiang","year":"2022","journal-title":"J. Phys. Appl. Phys."},{"issue":"15","key":"10.1016\/j.mejo.2026.107173_bib9","doi-asserted-by":"crossref","DOI":"10.1063\/5.0086996","article-title":"Two inch diameter, highly conducting bulk \u03b2-Ga2O3 single crystals grown by the Czochralski method","volume":"120","author":"Galazka","year":"2022","journal-title":"Appl. Phys. Lett."},{"issue":"2","key":"10.1016\/j.mejo.2026.107173_bib10","article-title":"\u03b2-Ga2O3 bulk single crystals grown by a casting method","volume":"935","author":"Ning","year":"2023","journal-title":"J. Alloys Compd."},{"issue":"6","key":"10.1016\/j.mejo.2026.107173_bib11","article-title":"Guest editorial: the dawn of gallium oxide microelectronics","volume":"112","author":"Masataka","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mejo.2026.107173_bib12","doi-asserted-by":"crossref","DOI":"10.1002\/crat.202400255","article-title":"Research progress and prospect of the bulk single crystal growth of \u03b2-Ga2O3: from 1964 to 2024","author":"Wang","year":"2025","journal-title":"Cryst. Res. Technol."},{"issue":"2","key":"10.1016\/j.mejo.2026.107173_bib13","article-title":"\u03b2-Gallium oxide power electronics","volume":"10","author":"Andrew","year":"2022","journal-title":"APL Mater."},{"issue":"23","key":"10.1016\/j.mejo.2026.107173_bib14","doi-asserted-by":"crossref","DOI":"10.1063\/1.5054573","article-title":"Three-dimensional anisotropic thermal conductivity tensor of single crystalline \u03b2-Ga2O3","volume":"113","author":"Jiang","year":"2018","journal-title":"Appl. Phys. Lett."},{"issue":"14","key":"10.1016\/j.mejo.2026.107173_bib15","first-page":"56","article-title":"Progress in developing high-voltage SiC power devices","volume":"39","author":"Bai","year":"2021","journal-title":"Sci. Technol. Rev."},{"key":"10.1016\/j.mejo.2026.107173_bib16","series-title":"65th Annual IEEE International Electron Devices Meeting (IEDM2019)","first-page":"12.5.1","article-title":"First demonstration of wafer scale heterogeneous integration of Ga2O3 MOSFETs on SiC and Si substrates by ion-cutting process[C]","author":"Xu","year":"2019"},{"issue":"6","key":"10.1016\/j.mejo.2026.107173_bib17","doi-asserted-by":"crossref","first-page":"691","DOI":"10.1016\/j.fmre.2021.11.003","article-title":"Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline \u03b2-Ga2O3 thin film on SiC","volume":"1","author":"Xu","year":"2021","journal-title":"Fundam. Res."},{"issue":"1","key":"10.1016\/j.mejo.2026.107173_bib18","doi-asserted-by":"crossref","first-page":"141","DOI":"10.1109\/TED.2003.821383","article-title":"Efficacy of charge sharing in reshaping the surface electric field in high voltage lateral RESURF devices","volume":"51","author":"Imam","year":"2004","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"7","key":"10.1016\/j.mejo.2026.107173_bib19","doi-asserted-by":"crossref","first-page":"1697","DOI":"10.1109\/TED.2003.814981","article-title":"Design and optimization of double-RESURF high-voltage lateral devices for a manufacturable process","volume":"50","author":"Imam","year":"2003","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"2","key":"10.1016\/j.mejo.2026.107173_bib20","first-page":"209","article-title":"Breakdown model of RESURF lateral power devices based on charge-sharing effect","volume":"32","author":"Zhang","year":"2014","journal-title":"J. Appl. Sci."},{"key":"10.1016\/j.mejo.2026.107173_bib21","doi-asserted-by":"crossref","DOI":"10.1016\/j.apsusc.2024.161377","article-title":"Effects of off-axis angles of 4H-SiC substrates on properties of \u03b2-Ga2O3 films grown by low-pressure chemical vapor deposition","volume":"680","author":"Hu","year":"2025","journal-title":"Appl. Surf. Sci."},{"issue":"3","key":"10.1016\/j.mejo.2026.107173_bib22","doi-asserted-by":"crossref","DOI":"10.1088\/1674-4926\/30\/3\/034005","article-title":"A charge allocating model for the breakdown voltage calculation and optimization of the lateral RESURF devices","volume":"30","author":"Xiaogang","year":"2009","journal-title":"J. Semiconduct."},{"issue":"2","key":"10.1016\/j.mejo.2026.107173_bib23","doi-asserted-by":"crossref","first-page":"1320","DOI":"10.1109\/TED.2023.3340660","article-title":"600V\/7A large-size RESURF \u03b2-Ga2O3 schottky barrier diode with high-temperature storage test","volume":"71","author":"Yuxi","year":"2024","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107173_bib24","doi-asserted-by":"crossref","first-page":"799","DOI":"10.1016\/j.sse.2003.12.033","article-title":"Analytical models for the surface potential and electrical field distribution of bulk-silicon RESURF devices","volume":"48","author":"Sun","year":"2004","journal-title":"Solid State Electron."},{"issue":"8","key":"10.1016\/j.mejo.2026.107173_bib25","doi-asserted-by":"crossref","first-page":"1268","DOI":"10.1109\/LED.2023.3287887","article-title":"10-kV Ga2O3 charge-balance schottky rectifier operational at 200\u00b0C","volume":"44","author":"Yuan","year":"2023","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2026.107173_bib26","series-title":"2023 4th International Conference on Innovative Trends in Information Technology (ICITIIT)","first-page":"1","article-title":"Improvement in breakdown voltage of junctionless power transistor with Ga2O3 RESURF region[C]","author":"R","year":"2023"},{"issue":"12","key":"10.1016\/j.mejo.2026.107173_bib27","doi-asserted-by":"crossref","first-page":"2487","DOI":"10.1109\/LED.2024.3469283","article-title":"Low QCVF 20A\/1.4kV \u03b2-Ga2O3 vertical trench High-k RESURF schottky barrier diode with Turn-On voltage of 0.5V","volume":"45","author":"Roy","year":"2024","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2026.107173_bib28","series-title":"2021 IEEE International Electron Devices Meeting (IEDM)","first-page":"36.6.1","article-title":"First demonstration of RESURF and superjunction \u03b2-Ga2O3 MOSFETs with p-NiO\/n-Ga2O3 junctions[C]","author":"Wang","year":"2021"},{"issue":"5","key":"10.1016\/j.mejo.2026.107173_bib29","article-title":"Simulation study of performance degradation in \u03b2-Ga2O3(001) vertical schottky barrier diodes based on anisotropic mobility modeling","volume":"10","author":"Zhipeng","year":"2021","journal-title":"ECS J. Solid State Sci. Technol."},{"issue":"10","key":"10.1016\/j.mejo.2026.107173_bib30","doi-asserted-by":"crossref","first-page":"3561","DOI":"10.1364\/OME.7.003561","article-title":"Temperature and doping concentration dependence of the energy band gap in \u03b2-Ga2O3 thin films grown on sapphire","volume":"7","author":"Subrina","year":"2017","journal-title":"Opt. Mater. Express"},{"issue":"9","key":"10.1016\/j.mejo.2026.107173_bib31","first-page":"2776","volume":"17","author":"Dubrovskii","year":"1975","journal-title":"Fiz. Tverd. Tela"},{"key":"10.1016\/j.mejo.2026.107173_bib32","doi-asserted-by":"crossref","DOI":"10.1149\/2162-8777\/accfbe","article-title":"TCAD simulation models, parameters, and methodologies for \u03b2-Ga2O3 power devices","volume":"12","author":"Wong","year":"2023","journal-title":"ECS J. Solid State Sci. Technol."},{"issue":"1","key":"10.1016\/j.mejo.2026.107173_bib33","first-page":"421","article-title":"Simulation of SiC high power devices","volume":"162","author":"Gustafsson U","year":"2015","journal-title":"Phys. Status Solidi"},{"issue":"5","key":"10.1016\/j.mejo.2026.107173_bib34","doi-asserted-by":"crossref","DOI":"10.1149\/2162-8777\/abed98","article-title":"Simulation study of performance degradation in \u03b2-Ga2O3 (001) vertical schottky barrier diodes based on anisotropic mobility modeling","volume":"10","author":"Li","year":"2021","journal-title":"ECS J. Solid State Sci. Technol."},{"issue":"5","key":"10.1016\/j.mejo.2026.107173_bib35","doi-asserted-by":"crossref","first-page":"679","DOI":"10.1063\/1.117804","article-title":"The minority carrier lifetime of n-type 4H- and 6H-SiC epitaxial layers","volume":"69","author":"Kordina","year":"1996","journal-title":"Appl. Phys. Lett."},{"issue":"2","key":"10.1016\/j.mejo.2026.107173_bib36","doi-asserted-by":"crossref","first-page":"682","DOI":"10.1109\/TED.2021.3137097","article-title":"Analytical model and structure of the multilayer enhancement-mode \u03b2-Ga2O3 planar MOSFETs","volume":"69","author":"Guo","year":"2022","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107173_bib37","first-page":"461","volume":"vol.778","author":"Niwa","year":"2014"},{"issue":"4","key":"10.1016\/j.mejo.2026.107173_bib38","first-page":"457","article-title":"Study on Novel4H-SiC anode-recessed D-RESURF schottky barrier diode","volume":"28","author":"Yi","year":"2008","journal-title":"Microelectronics"},{"issue":"11","key":"10.1016\/j.mejo.2026.107173_bib39","doi-asserted-by":"crossref","DOI":"10.1063\/5.0196517","article-title":"Current transport mechanism of lateral schottky barrier diodes on \u03b2-Ga2O3\/SiC structure with atomic level interface","volume":"124","author":"Xu","year":"2024","journal-title":"Appl. Phys. Lett."},{"issue":"42","key":"10.1016\/j.mejo.2026.107173_bib40","doi-asserted-by":"crossref","first-page":"57816","DOI":"10.1021\/acsami.4c08074","article-title":"Extremely low thermal resistance of \u03b2-Ga2O3 MOSFETs by Co-integrated design of substrate engineering and device packaging","volume":"16","author":"Sun Tiangui You","year":"2024","journal-title":"ACS Appl. Mater. Interfaces"}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126001293?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126001293?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2026,5,15]],"date-time":"2026-05-15T08:02:36Z","timestamp":1778832156000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S1879239126001293"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,7]]},"references-count":40,"alternative-id":["S1879239126001293"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107173","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2026,7]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Research of Schottky diode based on Ga2O3\/SiC pn heterojunction RESURF structure","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107173","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2026 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}],"article-number":"107173"}}