{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,15]],"date-time":"2026-05-15T08:15:21Z","timestamp":1778832921926,"version":"3.51.4"},"reference-count":25,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"funder":[{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2022YFF0605800"],"award-info":[{"award-number":["2022YFF0605800"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2026,7]]},"DOI":"10.1016\/j.mejo.2026.107179","type":"journal-article","created":{"date-parts":[[2026,3,24]],"date-time":"2026-03-24T23:52:09Z","timestamp":1774396329000},"page":"107179","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["A deep learning based global I\u2013V and C\u2013V parameter extractor for BSIM-CMG"],"prefix":"10.1016","volume":"173","author":[{"given":"Wangjun","family":"Yang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6289-6680","authenticated-orcid":false,"given":"Cong","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jianghao","family":"Ma","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shujun","family":"Gao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9033-2129","authenticated-orcid":false,"given":"Guangxin","family":"Guo","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3427-5320","authenticated-orcid":false,"given":"Hailong","family":"You","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"key":"10.1016\/j.mejo.2026.107179_b1","author":"Dou","year":"2025"},{"issue":"1","key":"10.1016\/j.mejo.2026.107179_b2","doi-asserted-by":"crossref","first-page":"254","DOI":"10.1109\/TED.2023.3327973","article-title":"Graph-based compact model (GCM) for efficient transistor parameter extraction: A machine learning approach on 12 nm FinFETs","volume":"71","author":"Yang","year":"2024","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2026.107179_b3","author":"BSIMCMG","year":"2025"},{"key":"10.1016\/j.mejo.2026.107179_b4","first-page":"184619","article-title":"Multi-task learning for real-time BSIM-CMG parameter extraction of NSFETs with multiple structural variations","volume":"12","author":"Lee","year":"2024","journal-title":"IEEE Access"},{"key":"10.1016\/j.mejo.2026.107179_b5","doi-asserted-by":"crossref","unstructured":"Le Duc-Hung, Pham Cong-Kha, Nguyen Thi Thien Trang, Bui Trong Tu, Parameter extraction and optimization using Levenberg-Marquardt algorithm, in: 2012 Fourth International Conference on Communications and Electronics, ICCE, 2012, pp. 434\u2013437.","DOI":"10.1109\/CCE.2012.6315945"},{"key":"10.1016\/j.mejo.2026.107179_b6","unstructured":"Gazmend Alia, Andi Buzo, Daniel Ludwig, Linus Maurer, Georg Pelz, A Differential Evolution based Methodology for Parameter Extraction of Behavioral Models of Electronic Components, in: SMACD\/PRIME 2021; International Conference on SMACD and 16th Conference on PRIME, 2021, pp. 1\u20134."},{"issue":"8","key":"10.1016\/j.mejo.2026.107179_b7","doi-asserted-by":"crossref","first-page":"4765","DOI":"10.1109\/TED.2022.3181536","article-title":"Deep learning-based BSIM-CMG parameter extraction for 10-nm FinFET","volume":"69","author":"Kao","year":"2022","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2026.107179_b8","doi-asserted-by":"crossref","DOI":"10.1016\/j.sse.2023.108766","article-title":"Deep learning-based I-V global parameter extraction for BSIM-CMG","volume":"209","author":"Chavez","year":"2023","journal-title":"Solid-State Electron."},{"issue":"7","key":"10.1016\/j.mejo.2026.107179_b9","doi-asserted-by":"crossref","first-page":"3437","DOI":"10.1109\/TED.2023.3278615","article-title":"Deep learning-based fast BSIM-CMG parameter extraction for general input dataset","volume":"70","author":"Ashai","year":"2023","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2026.107179_b10","doi-asserted-by":"crossref","DOI":"10.1016\/j.sse.2024.108898","article-title":"A single neural network global I-V and C-V parameter extractor for BSIM-CMG compact model","volume":"216","author":"Chen","year":"2024","journal-title":"Solid-State Electron."},{"issue":"5","key":"10.1016\/j.mejo.2026.107179_b11","doi-asserted-by":"crossref","first-page":"3307","DOI":"10.1109\/TED.2024.3381917","article-title":"A novel physics aware ANN-based framework for BSIM-CMG model parameter extraction","volume":"71","author":"Singhal","year":"2024","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2026.107179_b12","doi-asserted-by":"crossref","DOI":"10.1016\/j.sse.2024.109044","article-title":"GatedNN: An accurate deep learning-based parameter extraction for BSIM-CMG","volume":"224","author":"Guo","year":"2025","journal-title":"Solid-State Electron."},{"key":"10.1016\/j.mejo.2026.107179_b13","doi-asserted-by":"crossref","DOI":"10.1016\/j.sse.2025.109081","article-title":"A multi-stage neural network I-V and C-V BSIM-CMG model global parameter extractor for advanced GAAFET technologies","volume":"226","author":"Chen","year":"2025","journal-title":"Solid-State Electron."},{"issue":"4","key":"10.1016\/j.mejo.2026.107179_b14","doi-asserted-by":"crossref","first-page":"1551","DOI":"10.1109\/TED.2025.3537952","article-title":"Benchmarks for SPICE modeling and parameter extraction based on AI\/ML","volume":"72","author":"McAndrew","year":"2025","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2026.107179_b15","series-title":"Machine Learning","first-page":"41","article-title":"Multitask learning","author":"Caruana","year":"1997"},{"key":"10.1016\/j.mejo.2026.107179_b16","series-title":"An Overview of Multi-Task Learning in Deep Neural Networks","author":"Ruder","year":"2017"},{"key":"10.1016\/j.mejo.2026.107179_b17","doi-asserted-by":"crossref","unstructured":"Shijing Yao, Tanvir H. Morshed, Darsen D. Lu, Sriramkumar Venugopalan, Weize Xiong, C. R. Cleavelin, Ali M. Niknejad, Chenming Hu, Global parameter extraction for a multi-gate MOSFETs compact model, in: 2010 International Conference on Microelectronic Test Structures, ICMTS, 2010, pp. 194\u2013197.","DOI":"10.1109\/ICMTS.2010.5466821"},{"key":"10.1016\/j.mejo.2026.107179_b18","series-title":"FinFETs and Other Multi-Gate Transistors","first-page":"113","article-title":"BSIM-CMG: A compact model for multi-gate transistors","author":"Dunga","year":"2008"},{"key":"10.1016\/j.mejo.2026.107179_b19","series-title":"Proceedings of the 24th ACM SIGKDD International Conference on Knowledge Discovery & Data Mining","first-page":"1930","article-title":"Modeling task relationships in multi-task learning with multi-gate mixture-of-experts","author":"Ma","year":"2018"},{"key":"10.1016\/j.mejo.2026.107179_b20","doi-asserted-by":"crossref","DOI":"10.1016\/j.jcp.2024.112865","article-title":"Multi-stage neural networks: Function approximator of machine precision","volume":"504","author":"Wang","year":"2024","journal-title":"J. Comput. Phys."},{"key":"10.1016\/j.mejo.2026.107179_b21","doi-asserted-by":"crossref","first-page":"105","DOI":"10.1016\/j.mejo.2016.04.006","article-title":"ASAP7: A 7-nm FinFET predictive process design kit","volume":"53","author":"Clark","year":"2016","journal-title":"Microelectron. J."},{"issue":"1","key":"10.1016\/j.mejo.2026.107179_b22","first-page":"3249","article-title":"Spearman\u2019s correlation coefficient in statistical analysis","volume":"13","author":"Ali Abd Al-Hameed","year":"2022","journal-title":"Int. J. Nonlinear Anal. Appl."},{"issue":"10","key":"10.1016\/j.mejo.2026.107179_b23","doi-asserted-by":"crossref","first-page":"1348","DOI":"10.1002\/bjs.10895","article-title":"LASSO regression","volume":"105","author":"Ranstam","year":"2018","journal-title":"J. Br. Surg."},{"issue":"3","key":"10.1016\/j.mejo.2026.107179_b24","doi-asserted-by":"crossref","first-page":"659","DOI":"10.1007\/s11222-016-9646-1","article-title":"Correlation and variable importance in random forests","volume":"27","author":"Gregorutti","year":"2017","journal-title":"Stat. Comput."},{"issue":"9","key":"10.1016\/j.mejo.2026.107179_b25","doi-asserted-by":"crossref","first-page":"2202","DOI":"10.1109\/TED.2006.881005","article-title":"Validation of MOSFET model source\u2013drain symmetry","volume":"53","author":"Mcandrew","year":"2006","journal-title":"IEEE Trans. Electron Devices"}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126001359?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126001359?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2026,5,15]],"date-time":"2026-05-15T08:04:19Z","timestamp":1778832259000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S1879239126001359"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,7]]},"references-count":25,"alternative-id":["S1879239126001359"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107179","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2026,7]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"A deep learning based global I\u2013V and C\u2013V parameter extractor for BSIM-CMG","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107179","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2026 Published by Elsevier Ltd.","name":"copyright","label":"Copyright"}],"article-number":"107179"}}