{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,15]],"date-time":"2026-05-15T08:14:18Z","timestamp":1778832858944,"version":"3.51.4"},"reference-count":23,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"funder":[{"DOI":"10.13039\/501100005090","name":"Beijing Nova Program","doi-asserted-by":"publisher","award":["20250484884"],"award-info":[{"award-number":["20250484884"]}],"id":[{"id":"10.13039\/501100005090","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62274181"],"award-info":[{"award-number":["62274181"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62574219"],"award-info":[{"award-number":["62574219"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004739","name":"Chinese Academy of Sciences Youth Innovation Promotion Association","doi-asserted-by":"publisher","award":["2021115"],"award-info":[{"award-number":["2021115"]}],"id":[{"id":"10.13039\/501100004739","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2026,7]]},"DOI":"10.1016\/j.mejo.2026.107198","type":"journal-article","created":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T15:39:47Z","timestamp":1775057987000},"page":"107198","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["Scalable modeling and analysis of heterogeneous TSV-Bump structures"],"prefix":"10.1016","volume":"173","author":[{"given":"Yuqin","family":"Wang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yajuan","family":"Su","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaojing","family":"Su","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Pengyu","family":"Ren","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yujie","family":"Jiang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhanzi","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tianao","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yayi","family":"Wei","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"key":"10.1016\/j.mejo.2026.107198_b1","series-title":"2008 10th Electronics Packaging Technology Conference","first-page":"212","article-title":"Advanced metallization for 3D integration","author":"Beica","year":"2008"},{"issue":"2","key":"10.1016\/j.mejo.2026.107198_b2","doi-asserted-by":"crossref","first-page":"205","DOI":"10.1016\/j.mejo.2013.10.015","article-title":"Capacitance characterization of tapered through-silicon-via considering MOS effect","volume":"45","author":"Wang","year":"2014","journal-title":"Microelectron. J."},{"issue":"1","key":"10.1016\/j.mejo.2026.107198_b3","doi-asserted-by":"crossref","first-page":"256","DOI":"10.1109\/TED.2009.2034508","article-title":"Electrical modeling and characterization of through silicon via for three-dimensional ICs","volume":"57","author":"Katti","year":"2010","journal-title":"IEEE Trans. Electron Devices"},{"issue":"2","key":"10.1016\/j.mejo.2026.107198_b4","doi-asserted-by":"crossref","first-page":"181","DOI":"10.1109\/TCPMT.2010.2101890","article-title":"High-frequency scalable electrical model and analysis of a through silicon via (TSV)","volume":"1","author":"Kim","year":"2011","journal-title":"IEEE Trans. Compon. Packag. Manuf. Technol."},{"key":"10.1016\/j.mejo.2026.107198_b5","first-page":"1","article-title":"Electrical modeling and characterization of through silicon vias (TSV)","volume":"vol. 2","author":"Hu","year":"2012"},{"key":"10.1016\/j.mejo.2026.107198_b6","series-title":"2012 13th International Conference on Electronic Packaging Technology & High Density Packaging","first-page":"121","article-title":"Simulation-based investigation in effects of design parameters on electrical characters for a TSV-bump combination","author":"Fang","year":"2012"},{"issue":"4","key":"10.1016\/j.mejo.2026.107198_b7","doi-asserted-by":"crossref","first-page":"697","DOI":"10.1109\/TCPMT.2013.2239362","article-title":"High-frequency scalable modeling and analysis of a differential signal through-silicon via","volume":"4","author":"Kim","year":"2014","journal-title":"IEEE Trans. Compon. Packag. Manuf. Technol."},{"key":"10.1016\/j.mejo.2026.107198_b8","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2025.106823","article-title":"Towards miniaturization: Reflectionless filter with sharp roll-off characterization based on through-silicon via","volume":"165","author":"Wang","year":"2025","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107198_b9","series-title":"19th Topical Meeting on Electrical Performance of Electronic Packaging and Systems","first-page":"37","article-title":"Characterization and modeling of solder balls and through-strata-vias (TSVs) in 3D architecture","author":"Xu","year":"2010"},{"key":"10.1016\/j.mejo.2026.107198_b10","series-title":"2012 International Electron Devices Meeting","first-page":"30.6.1","article-title":"Hybrid modeling and analysis of different through-silicon-via (TSV)-based 3D power distribution networks","author":"Xu","year":"2012"},{"issue":"3","key":"10.1016\/j.mejo.2026.107198_b11","doi-asserted-by":"crossref","first-page":"193","DOI":"10.1109\/TEPM.2002.801647","article-title":"Pb-free Sn\/3.5Ag electroplating bumping process and under bump metallization (UBM)","volume":"25","author":"Jang","year":"2002","journal-title":"IEEE Trans. Electron. Packag. Manuf."},{"issue":"3","key":"10.1016\/j.mejo.2026.107198_b12","doi-asserted-by":"crossref","first-page":"393","DOI":"10.1109\/LED.2010.2099203","article-title":"Closed-form expressions for the resistance and the inductance of different profiles of through-silicon vias","volume":"32","author":"Liang","year":"2011","journal-title":"IEEE Electron Device Lett."},{"issue":"10","key":"10.1016\/j.mejo.2026.107198_b13","doi-asserted-by":"crossref","first-page":"1488","DOI":"10.1109\/TCPMT.2015.2457938","article-title":"Capacitance expressions and electrical characterization of tapered through- silicon vias for 3-D ICs","volume":"5","author":"Su","year":"2015","journal-title":"IEEE Trans. Compon. Packag. Manuf. Technol."},{"key":"10.1016\/j.mejo.2026.107198_b14","series-title":"2020 IEEE International Symposium on Smart Electronic Systems","first-page":"44","article-title":"Signal transmission and reflection losses of cylindrical and tapered shaped TSV in 3D integrated circuits","author":"Sahu","year":"2020"},{"issue":"6","key":"10.1016\/j.mejo.2026.107198_b15","doi-asserted-by":"crossref","first-page":"1724","DOI":"10.1109\/TEMC.2023.3307816","article-title":"High-frequency electromagnetic eddy effect modeling for cylindrical and tapered bump","volume":"65","author":"Chandrakar","year":"2023","journal-title":"IEEE Trans. Electromagn. Compat."},{"issue":"11","key":"10.1016\/j.mejo.2026.107198_b16","doi-asserted-by":"crossref","first-page":"2128","DOI":"10.1109\/TCPMT.2024.3480697","article-title":"Investigating the tapered profiles on the parasitic inductance of through-silicon vias","volume":"14","author":"Liu","year":"2024","journal-title":"IEEE Trans. Compon. Packag. Manuf. Technol."},{"issue":"2","key":"10.1016\/j.mejo.2026.107198_b17","doi-asserted-by":"crossref","first-page":"256","DOI":"10.1109\/TCPMT.2014.2377375","article-title":"Capacitance and conductance of through silicon vias with consideration of multilayer media and different shapes","volume":"5","author":"Liu","year":"2015","journal-title":"IEEE Trans. Compon. Packag. Manuf. Technol."},{"key":"10.1016\/j.mejo.2026.107198_b18","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2025.107014","article-title":"Frequency and time-domain analysis of shield differential multibit tgv using EM-RA technique for 3D integrated circuits","volume":"168","author":"Kumar","year":"2026","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107198_b19","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2025.107041","article-title":"High-density double-helix inductor based on coaxial through-silicon via and its analytical model","volume":"169","author":"Yin","year":"2026","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107198_b20","article-title":"A thermal modeling method for heterogeneous three-dimensional integrated circuits considering optimized layout of through silicon vias and redistribution layers","volume":"164","author":"Minjun Wu","year":"2025","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107198_b21","article-title":"Finite element modeling analysis of misalignment impact on simulated electrical RC in scaling hybrid bonding pairs","volume":"299","author":"Guoqiang Zhao","year":"2025","journal-title":"Microelectron. Eng."},{"key":"10.1016\/j.mejo.2026.107198_b22","article-title":"Study on the electrical breakdown failure mode transition of TSV-RDL","volume":"141","author":"Tao Gong","year":"2023","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107198_b23","article-title":"High speed RLC equivalent RC delay model using normalized asymptotic function for global VLSI interconnects","volume":"107","author":"Sunil Jadav","year":"2021","journal-title":"Microelectron. J."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126001542?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126001542?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2026,5,15]],"date-time":"2026-05-15T08:03:45Z","timestamp":1778832225000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S1879239126001542"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,7]]},"references-count":23,"alternative-id":["S1879239126001542"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107198","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2026,7]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Scalable modeling and analysis of heterogeneous TSV-Bump structures","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107198","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2026 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}],"article-number":"107198"}}