{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,16]],"date-time":"2026-06-16T04:53:16Z","timestamp":1781585596148,"version":"3.54.5"},"reference-count":25,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2026,8]]},"DOI":"10.1016\/j.mejo.2026.107212","type":"journal-article","created":{"date-parts":[[2026,4,9]],"date-time":"2026-04-09T07:53:03Z","timestamp":1775721183000},"page":"107212","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["TID-induced leakage-assisted degradation and failure mechanisms in cathode-short base-resistance-controlled thyristors"],"prefix":"10.1016","volume":"174","author":[{"given":"Xuanyi","family":"Huo","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Limei","family":"Song","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6855-776X","authenticated-orcid":false,"given":"Xiaowu","family":"Cai","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Longli","family":"Pan","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jian","family":"Lu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lei","family":"Shu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bo","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"78","reference":[{"key":"10.1016\/j.mejo.2026.107212_bib1","series-title":"2024 3rd International Conference on Energy and Electrical Power Systems (ICEEPS)","first-page":"1120","article-title":"Research on high-frequency pulse power supply based on linear transformer driver technology","author":"Fang","year":"2024"},{"key":"10.1016\/j.mejo.2026.107212_bib2","doi-asserted-by":"crossref","DOI":"10.1038\/s41598-023-48793-z","article-title":"Development of nanosecond spike pulse power supply for electrochemical micromachining","volume":"13","author":"Zhao","year":"2023","journal-title":"Sci. Rep."},{"key":"10.1016\/j.mejo.2026.107212_bib3","series-title":"2025 IEEE Pulsed Power & Plasma Science (PPPS)","first-page":"1","article-title":"A practical circuit modeling approach for semiconductor opening switch-driven pulsed power systems","author":"Spencer","year":"2025"},{"key":"10.1016\/j.mejo.2026.107212_bib4","doi-asserted-by":"crossref","first-page":"852","DOI":"10.1109\/TPS.2024.3360441","article-title":"Development of a new bipolar square wave high-voltage pulse power supply","volume":"52","author":"Zhu","year":"2024","journal-title":"IEEE Trans. Plasma Sci."},{"key":"10.1016\/j.mejo.2026.107212_bib5","doi-asserted-by":"crossref","DOI":"10.1063\/5.0090609","article-title":"Research on high-precision pulse power supply","volume":"93","author":"Zhu","year":"2022","journal-title":"Rev. Sci. Instrum."},{"key":"10.1016\/j.mejo.2026.107212_bib6","doi-asserted-by":"crossref","first-page":"1465","DOI":"10.1109\/TNS.2017.2786140","article-title":"Evolution of total ionizing dose effects in MOS devices with Moore's law scaling","volume":"65","author":"Fleetwood","year":"2018","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"10.1016\/j.mejo.2026.107212_bib7","doi-asserted-by":"crossref","first-page":"1879","DOI":"10.1109\/TNS.2024.3366432","article-title":"Comparison of high energy X-ray and cobalt-60 irradiations on MOS capacitors","volume":"71","author":"Girones","year":"2024","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"10.1016\/j.mejo.2026.107212_bib8","doi-asserted-by":"crossref","DOI":"10.1088\/1674-1056\/ac9fc4","article-title":"Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices","volume":"32","author":"Lu","year":"2023","journal-title":"Chin. Phys. B"},{"key":"10.1016\/j.mejo.2026.107212_bib9","doi-asserted-by":"crossref","first-page":"2222","DOI":"10.1109\/TNS.2022.3213042","article-title":"Impact of ring-shaped collector contact on total ionizing dose susceptibility of vertical n-p-n bipolar transistors","volume":"69","author":"Wei","year":"2022","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"10.1016\/j.mejo.2026.107212_bib10","doi-asserted-by":"crossref","DOI":"10.1016\/j.microrel.2024.115326","article-title":"Impact of proton-induced total ionizing dose effects on electrical characteristics and safe operating area of trench field-stop IGBT devices","volume":"154","author":"Liu","year":"2024","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/j.mejo.2026.107212_bib11","article-title":"Hourglass transistor: an alternative and improved MOS structure robust to total ionization dose radiation","volume":"152","author":"Pelcastre Ortega","year":"2024","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107212_bib12","article-title":"Interrupted field-stop layer reverse conducting MOS controlled thyristor and mitigation of the voltage snapback","volume":"164","author":"Li","year":"2025","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107212_bib13","doi-asserted-by":"crossref","first-page":"1676","DOI":"10.1109\/LED.2023.3305337","article-title":"A novel insulated gate trigger thyristor integrated with gate transient voltage suppressor for ultrahigh di\/dt pulse switching","volume":"44","author":"Liu","year":"2023","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2026.107212_bib14","doi-asserted-by":"crossref","first-page":"4206","DOI":"10.1109\/TED.2017.2736529","article-title":"Design and characterization of high di\/dt CS-MCT for pulse power applications","volume":"64","author":"Chen","year":"2017","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107212_bib15","series-title":"2023 IEEE 6th International Conference on Electronic Information and Communication Technology (ICEICT)","first-page":"270","article-title":"A novel snapback-free BRT with A N-Type buried carrier storage layer","author":"Zhang","year":"2023"},{"key":"10.1016\/j.mejo.2026.107212_bib16","doi-asserted-by":"crossref","first-page":"1106","DOI":"10.1134\/1.1403576","article-title":"Switching characteristics of electron-irradiated MOS-controlled thyristors","volume":"35","author":"Chernyavskii","year":"2001","journal-title":"Semiconductors"},{"key":"10.1016\/j.mejo.2026.107212_bib17","doi-asserted-by":"crossref","first-page":"508","DOI":"10.1109\/TNS.2020.2971646","article-title":"Experimental study on displacement damage effects of anode-short MOS-controlled thyristor","volume":"67","author":"Li","year":"2020","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"10.1016\/j.mejo.2026.107212_bib18","doi-asserted-by":"crossref","first-page":"609","DOI":"10.1109\/TNS.2022.3149807","article-title":"Displacement damage effects of pulse discharge circuit switched by anode-short MOS-controlled thyristor","volume":"69","author":"Li","year":"2022","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"10.1016\/j.mejo.2026.107212_bib19","doi-asserted-by":"crossref","first-page":"508","DOI":"10.1109\/TNS.2020.2971646","article-title":"Experimental study on displacement damage effects of anode-short MOS-controlled thyristor","volume":"67","author":"Li","year":"2020","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"10.1016\/j.mejo.2026.107212_bib20","series-title":"2022 IEEE 34th International Symposium on Power Semiconductor Devices and Ics (ISPSD)","first-page":"177","article-title":"Experimentally demonstrating fast neutron irradiation effect on high-di\/dt switching characteristics of insulated gate triggered thyristor for pulse power","author":"Liu","year":"2022"},{"key":"10.1016\/j.mejo.2026.107212_bib21","doi-asserted-by":"crossref","first-page":"1096","DOI":"10.1109\/JEDS.2020.3030880","article-title":"Ionization damage effects of pulse discharge circuit switched by anode-short MOS-controlled thyristor","volume":"8","author":"Li","year":"2020","journal-title":"IEEE J. Electron Devices Soc."},{"key":"10.1016\/j.mejo.2026.107212_bib22","doi-asserted-by":"crossref","first-page":"2062","DOI":"10.1109\/TNS.2020.3012766","article-title":"A study on ionization damage effects of anode-short MOS-controlled thyristor","volume":"67","author":"Li","year":"2020","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"10.1016\/j.mejo.2026.107212_bib23","series-title":"Ninth IEEE International Pulsed Power Conference","first-page":"6","article-title":"Pulsed power applications","author":"Kristiansen","year":"1993"},{"key":"10.1016\/j.mejo.2026.107212_bib24","doi-asserted-by":"crossref","first-page":"133","DOI":"10.1063\/1.96974","article-title":"Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors","volume":"48","author":"McWhorter","year":"1986","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mejo.2026.107212_bib25","doi-asserted-by":"crossref","first-page":"723","DOI":"10.1109\/TNS.2012.2186826","article-title":"Modeling the non-uniform distribution of radiation-induced interface traps","volume":"59","author":"Esqueda","year":"2012","journal-title":"IEEE Trans. Nucl. Sci."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126001682?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126001682?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2026,6,16]],"date-time":"2026-06-16T04:12:33Z","timestamp":1781583153000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S1879239126001682"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,8]]},"references-count":25,"alternative-id":["S1879239126001682"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107212","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2026,8]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"TID-induced leakage-assisted degradation and failure mechanisms in cathode-short base-resistance-controlled thyristors","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107212","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2026 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}],"article-number":"107212"}}