{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,16]],"date-time":"2026-06-16T04:54:00Z","timestamp":1781585640700,"version":"3.54.5"},"reference-count":17,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"funder":[{"DOI":"10.13039\/501100005311","name":"China Southern Power Grid Co Ltd","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100005311","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2026,8]]},"DOI":"10.1016\/j.mejo.2026.107213","type":"journal-article","created":{"date-parts":[[2026,4,10]],"date-time":"2026-04-10T08:24:32Z","timestamp":1775809472000},"page":"107213","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["A novel trench-gate SiC IGBT with floating P-buried layers for improved performance"],"prefix":"10.1016","volume":"174","author":[{"given":"Qian","family":"Wang","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xuanting","family":"Song","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7511-5553","authenticated-orcid":false,"given":"Jun","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"78","reference":[{"issue":"5","key":"10.1016\/j.mejo.2026.107213_bib1","doi-asserted-by":"crossref","first-page":"5874","DOI":"10.1109\/TPEL.2020.3027370","article-title":"Hans-Peter Nee, static and dynamic performance prediction of ultrahigh-voltage silicon carbide insulated-gate bipolar transistors","volume":"36","author":"Johannesson","year":"2021","journal-title":"IEEE Trans. Power Electron."},{"issue":"12","key":"10.1016\/j.mejo.2026.107213_bib2","doi-asserted-by":"crossref","first-page":"5621","DOI":"10.1109\/TED.2020.3033268","article-title":"Theoretical analysis of on-state performance limit of 4H-SiC IGBT in field-stop technology","volume":"67","author":"Lou","year":"2020","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107213_bib3","doi-asserted-by":"crossref","first-page":"1013","DOI":"10.4028\/www.scientific.net\/MSF.778-780.1013","article-title":"Characterization of 4H-SiC bipolar junction transistor at high temperatures","volume":"778\u2013780","author":"Zhang","year":"2014","journal-title":"Mater. Sci. Forum"},{"issue":"7","key":"10.1016\/j.mejo.2026.107213_bib4","doi-asserted-by":"crossref","first-page":"3034","DOI":"10.1109\/TED.2019.2914298","article-title":"Gate structure design of SiC trench IGBTs for injection-enhancement effect","volume":"66","author":"Wei","year":"2019","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107213_bib5","series-title":"Proc. 54th Annual Device Research Conference Digest","first-page":"56","article-title":"A fully planarized, 6H-SiC UMOS insulated-gate bipolar transistor","author":"Ramungul","year":"1996"},{"issue":"9","key":"10.1016\/j.mejo.2026.107213_bib6","doi-asserted-by":"crossref","first-page":"935","DOI":"10.1109\/LED.2015.2462807","article-title":"An insulated-gate bipolar transistor with a collector trench electron extraction channel","volume":"36","author":"Jiang","year":"2015","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2026.107213_bib7","series-title":"A New Power Device Concept with a Great Improvement Potential, 12th International Symposium on Power Semiconductor Devices & Ics. Proceedings (Cat. No.00CH37094)","first-page":"355","article-title":"The field stop IGBT (FS IGBT)","author":"Laska","year":"2000"},{"issue":"2","key":"10.1016\/j.mejo.2026.107213_bib8","first-page":"2080","article-title":"A review of SiC IGBT: models, fabrications, characteristics, and applications","volume":"36","author":"Han","year":"2021","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107213_bib9","series-title":"Proc. 26th Int. Symp. Power Semiconductor Devices Ic's (ISPSD)","first-page":"358","article-title":"22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation","author":"Brunt","year":"2014"},{"issue":"Oct","key":"10.1016\/j.mejo.2026.107213_bib10","article-title":"Investigation on the carrier-storage super-junction IGBT: characteristics, mechanism, and advantages","volume":"142","author":"Luping","year":"2023","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107213_bib11","series-title":"Proc. 2018 International Semiconductor Conference (CAS)","first-page":"151","article-title":"High pillar doping concentration for SiC superjunction IGBTs","author":"Kang","year":"2018"},{"issue":"8","key":"10.1016\/j.mejo.2026.107213_bib12","doi-asserted-by":"crossref","first-page":"4421","DOI":"10.1109\/TED.2022.3183555","article-title":"A hybrid-channel injection enhanced modulation 4H-SiC IGBT transistors with improved performance","volume":"69","author":"Deng","year":"2022","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107213_bib13","doi-asserted-by":"crossref","DOI":"10.1016\/j.mssp.2021.106026","article-title":"Injection enhanced SiC planar gate IGBT with partial Schottky contact emitter","volume":"134","author":"Zhang","year":"2021","journal-title":"Mater. Sci. Semicond. Process."},{"key":"10.1016\/j.mejo.2026.107213_bib14","series-title":"Proc. 8th Int. Symp. Power Semiconductor Devices Ic's (ISPSD)","first-page":"349","article-title":"Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application","author":"Takahashi","year":"2002"},{"key":"10.1016\/j.mejo.2026.107213_bib15","series-title":"Proc. 17th Int. Symp. Power Semiconductor Devices Ic's (ISPSD)","first-page":"303","article-title":"10kV trench gate IGBTs on 4H-SiC","author":"Zhang","year":"2005"},{"key":"10.1016\/j.mejo.2026.107213_bib16","series-title":"Proc. 19th Int. Symp. Power Semiconductor Devices Ic's (ISPSD)","first-page":"281","article-title":"New improvement results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 m\u03a9\u00b7cm2 at 25\u00b0C","author":"Zhang","year":"2007"},{"issue":"6","key":"10.1016\/j.mejo.2026.107213_bib17","doi-asserted-by":"crossref","first-page":"2592","DOI":"10.1109\/TED.2017.2697763","article-title":"Dynamic degradation in SiC trench MOSFET with a floating p-Shield revealed with numerical simulations","volume":"64","author":"Wei","year":"2017","journal-title":"IEEE Trans. Electron. Dev."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126001694?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126001694?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2026,6,16]],"date-time":"2026-06-16T04:14:00Z","timestamp":1781583240000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S1879239126001694"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,8]]},"references-count":17,"alternative-id":["S1879239126001694"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107213","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2026,8]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"A novel trench-gate SiC IGBT with floating P-buried layers for improved performance","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107213","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2026 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}],"article-number":"107213"}}