{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,9]],"date-time":"2026-07-09T14:20:26Z","timestamp":1783606826911,"version":"3.55.0"},"reference-count":50,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"funder":[{"DOI":"10.13039\/501100000148","name":"Canadian Anesthesiologists' Society","doi-asserted-by":"publisher","award":["YSBR-064"],"award-info":[{"award-number":["YSBR-064"]}],"id":[{"id":"10.13039\/501100000148","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2026,9]]},"DOI":"10.1016\/j.mejo.2026.107241","type":"journal-article","created":{"date-parts":[[2026,5,7]],"date-time":"2026-05-07T07:07:11Z","timestamp":1778137631000},"page":"107241","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["A selective gate-recess and passivation integrated process for high-performance enhancement-mode GaN HEMTs on an ultrathin barrier"],"prefix":"10.1016","volume":"175","author":[{"given":"Xuankun","family":"Wu","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Changxin","family":"Mi","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhe","family":"Cheng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shujie","family":"Xie","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Boyang","family":"Yi","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mengxiao","family":"Lian","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiaheng","family":"He","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zongyang","family":"Hu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yun","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"78","reference":[{"issue":"6","key":"10.1016\/j.mejo.2026.107241_bib1","doi-asserted-by":"crossref","first-page":"3001","DOI":"10.1109\/TED.2023.3269728","article-title":"Scaled InAlN\/GaN HEMT on sapphire with fT\/fmax of 190\/301 GHz","volume":"70","author":"He","year":"2023","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"10","key":"10.1016\/j.mejo.2026.107241_bib2","doi-asserted-by":"crossref","first-page":"2982","DOI":"10.1109\/TED.2013.2268160","article-title":"Scaling of GaN HEMTs and schottky diodes for submillimeter-wave MMIC applications","volume":"60","author":"Shinohara","year":"2013","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"10","key":"10.1016\/j.mejo.2026.107241_bib3","doi-asserted-by":"crossref","first-page":"1116","DOI":"10.1109\/LED.2010.2058845","article-title":"Enhancement-mode AlN\/GaN\/AlGaN DHFET with 700-mS\/mm gm and 112-GHz fT","volume":"31","author":"Corrion","year":"2010","journal-title":"IEEE Electron Device Lett."},{"issue":"6","key":"10.1016\/j.mejo.2026.107241_bib4","doi-asserted-by":"crossref","first-page":"835","DOI":"10.1109\/LMWT.2023.3268184","article-title":"Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications","volume":"33","author":"Then","year":"2023","journal-title":"IEEE Microwave and Wireless Technology Letters"},{"issue":"14","key":"10.1016\/j.mejo.2026.107241_bib5","doi-asserted-by":"crossref","DOI":"10.1063\/5.0260480","article-title":"High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation","volume":"126","author":"He","year":"2025","journal-title":"Appl. Phys. Lett."},{"issue":"5","key":"10.1016\/j.mejo.2026.107241_bib6","doi-asserted-by":"crossref","first-page":"701","DOI":"10.1109\/LED.2020.2984663","article-title":"Millimeter-wave AlGaN\/GaN HEMTs with 43.6% power-added-efficiency at 40 GHz fabricated by atomic layer etching gate recess","volume":"41","author":"Zhang","year":"2020","journal-title":"IEEE Electron Device Lett."},{"issue":"10","key":"10.1016\/j.mejo.2026.107241_bib7","doi-asserted-by":"crossref","DOI":"10.1063\/5.0080320","article-title":"Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax\u00b7VBK in ultrathin barrier AlGaN\/GaN HEMTs with slant-field-plate T-gates","volume":"120","author":"Wang","year":"2022","journal-title":"Appl. Phys. Lett."},{"issue":"7","key":"10.1016\/j.mejo.2026.107241_bib8","doi-asserted-by":"crossref","DOI":"10.1088\/0268-1242\/28\/7\/074012","article-title":"Prospects for the application of GaN power devices in hybrid electric vehicle drive systems","volume":"28","author":"Su","year":"2013","journal-title":"Semicond. Sci. Technol."},{"issue":"4","key":"10.1016\/j.mejo.2026.107241_bib9","doi-asserted-by":"crossref","DOI":"10.1002\/aelm.202001045","article-title":"Recent advances in GaN-Based power HEMT devices","volume":"7","author":"He","year":"2021","journal-title":"Adv. Electron. Mater."},{"key":"10.1016\/j.mejo.2026.107241_bib10","series-title":"Proc. 2025 IEEE International Electron Devices Meeting (IEDM)","article-title":"GaN chiplet technology based on 300mm gan-on-silicon","author":"Then","year":"2025"},{"issue":"10","key":"10.1016\/j.mejo.2026.107241_bib11","doi-asserted-by":"crossref","first-page":"1030","DOI":"10.1109\/LED.2009.2029532","article-title":"Ultrathin InAlN\/AlN barrier HEMT with high performance in normally off operation","volume":"30","author":"Ostermaier","year":"2009","journal-title":"IEEE Electron Device Lett."},{"issue":"1","key":"10.1016\/j.mejo.2026.107241_bib12","doi-asserted-by":"crossref","first-page":"29","DOI":"10.1109\/LED.2022.3220693","article-title":"RF enhancement-mode p-GaN gate HEMT on 200 mm-Si substrates","volume":"44","author":"Cheng","year":"2023","journal-title":"IEEE Electron Device Lett."},{"issue":"9","key":"10.1016\/j.mejo.2026.107241_bib13","doi-asserted-by":"crossref","first-page":"2207","DOI":"10.1109\/TED.2006.881054","article-title":"Control of threshold voltage of AlGaN\/GaN HEMTs by fluoride-based plasma treatment: from depletion mode to enhancement mode","volume":"53","author":"Cai","year":"2006","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107241_bib14","first-page":"209","article-title":"A review on the evolution and outlook of E-mode III-nitride HEMTs: comparative insights into architectures and performance","author":"Rao","year":"2026","journal-title":"Micro Nanostruct."},{"issue":"6","key":"10.1016\/j.mejo.2026.107241_bib15","doi-asserted-by":"crossref","first-page":"428","DOI":"10.1109\/LED.2006.874761","article-title":"High-performance E-mode AlGaN\/GaN HEMTs","volume":"27","author":"Palacios","year":"2006","journal-title":"IEEE Electron Device Lett."},{"issue":"12","key":"10.1016\/j.mejo.2026.107241_bib16","doi-asserted-by":"crossref","first-page":"1383","DOI":"10.1109\/LED.2010.2072771","article-title":"Gate-recessed enhancement-mode InAlN\/AlN\/GaN HEMTs with 1.9-A\/mm drain current density and 800-mS\/mm transconductance","volume":"31","author":"Wang","year":"2010","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2026.107241_bib17","first-page":"153","article-title":"A fin-gate p-GaN HEMT with high threshold voltage and improved dynamic performance","author":"Shen","year":"2024","journal-title":"Microelectron. J."},{"issue":"3","key":"10.1016\/j.mejo.2026.107241_bib18","doi-asserted-by":"crossref","first-page":"1383","DOI":"10.1109\/TED.2023.3276338","article-title":"High-efficiency millimeter-wave enhancement-mode ultrathin-barrier AlGaN\/GaN Fin-HEMT for low-voltage terminal applications","volume":"71","author":"Zhou","year":"2024","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"3","key":"10.1016\/j.mejo.2026.107241_bib19","doi-asserted-by":"crossref","first-page":"349","DOI":"10.1109\/LED.2025.3526503","article-title":"High RF performance E-Mode gan-on-si HEMTs with po\u1d64t of 5.32 W\/mm using high-quality ultrathin buffer","volume":"46","author":"Du","year":"2025","journal-title":"IEEE Electron Device Lett."},{"issue":"4","key":"10.1016\/j.mejo.2026.107241_bib20","doi-asserted-by":"crossref","first-page":"1453","DOI":"10.1109\/TED.2018.2808345","article-title":"Characterization of 880 V normally off GaN MOSHEMT on silicon substrate fabricated with a plasma-free, self-terminated gate recess process","volume":"65","author":"Tao","year":"2018","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"5","key":"10.1016\/j.mejo.2026.107241_bib21","doi-asserted-by":"crossref","first-page":"642","DOI":"10.1021\/acsaelm.8b00102","article-title":"Enhanced gate reliability in GaN MIS-FETs by converting the GaN channel into crystalline gallium oxynitride","volume":"1","author":"Hua","year":"2019","journal-title":"ACS Appl. Electron. Mater."},{"issue":"1","key":"10.1016\/j.mejo.2026.107241_bib22","doi-asserted-by":"crossref","first-page":"13","DOI":"10.1016\/S0038-1101(00)00164-7","article-title":"Inductively coupled high-density plasma-induced etch damage of GaN MESFETs","volume":"45","author":"Shul","year":"2001","journal-title":"Solid State Electron."},{"key":"10.1016\/j.mejo.2026.107241_bib23","first-page":"174","article-title":"Modulating surface trapping and electric-field distribution in 0.1 \u03bcm GaN HEMTs via localized cap-layer engineering","author":"Mo","year":"2026","journal-title":"Microelectron. J."},{"issue":"6","key":"10.1016\/j.mejo.2026.107241_bib24","doi-asserted-by":"crossref","DOI":"10.1088\/0268-1242\/31\/6\/065011","article-title":"Technology of integrated self-aligned E\/D-mode n++GaN\/InAlN\/AlN\/GaN MOS HEMTs for mixed-signal electronics","volume":"31","author":"Blaho","year":"2016","journal-title":"Semicond. Sci. Technol."},{"issue":"3","key":"10.1016\/j.mejo.2026.107241_bib25","doi-asserted-by":"crossref","first-page":"369","DOI":"10.1109\/LED.2012.2237374","article-title":"An etch-stop barrier structure for GaN high-electron-mobility transistors","volume":"34","author":"Lu","year":"2013","journal-title":"IEEE Electron Device Lett."},{"issue":"11","key":"10.1016\/j.mejo.2026.107241_bib26","article-title":"Characterization of plasma-induced damage of selectively recessed GaN\/InAlN\/AlN\/GaN heterostructures using SiCl4 and SF6","volume":"49","author":"Ostermaier","year":"2010","journal-title":"Jpn. J. Appl. Phys."},{"issue":"1","key":"10.1016\/j.mejo.2026.107241_bib27","doi-asserted-by":"crossref","first-page":"207","DOI":"10.1109\/TED.2017.2773201","article-title":"Ultrathin-barrier AlGaN\/GaN heterostructure: a recess-free technology for manufacturing high-performance gan-on-si power devices","volume":"65","author":"Huang","year":"2018","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"4","key":"10.1016\/j.mejo.2026.107241_bib28","doi-asserted-by":"crossref","first-page":"1063","DOI":"10.1109\/TED.2011.2105268","article-title":"Monolithic integration of Enhancement- and depletion-mode AlN\/GaN\/AlGaN DHFETs by selective MBE regrowth","volume":"58","author":"Brown","year":"2011","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"7","key":"10.1016\/j.mejo.2026.107241_bib29","doi-asserted-by":"crossref","DOI":"10.3390\/electronics12071667","article-title":"Recess-free E-Mode AlGaN\/GaN MIS-HFET with crystalline PEALD AlN passivation process","volume":"12","author":"Jang","year":"2023","journal-title":"Electronics"},{"key":"10.1016\/j.mejo.2026.107241_bib30","first-page":"173","article-title":"PECVD SiNx passivation for AlGaN\/GaN HFETs with ultra-thin AlGaN barrier","author":"Kim","year":"2020","journal-title":"Solid State Electron."},{"issue":"8","key":"10.1016\/j.mejo.2026.107241_bib31","doi-asserted-by":"crossref","first-page":"1075","DOI":"10.1109\/LED.2017.2718624","article-title":"Gate-recessed Normally-OFF GaN MOSHEMT with improved channel mobility and dynamic performance using AlN\/Si3N4 as passivation and post gate-recess channel protection layers","volume":"38","author":"Liu","year":"2017","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2026.107241_bib32","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2026.107087","article-title":"Stress Modulation of 2DEG Concentration in Thin-Barrier AlGaN\/GaN HEMT on Si Substrate via LPCVD SiN: experiment and Simulation","author":"Su","year":"2026","journal-title":"Microelectron. J."},{"issue":"6","key":"10.1016\/j.mejo.2026.107241_bib33","article-title":"Recess-free enhancement-mode AlGaN\/GaN RF HEMTs on Si substrate","volume":"45","author":"Luan","year":"2024","journal-title":"J. Semiconduct."},{"issue":"4","key":"10.1016\/j.mejo.2026.107241_bib34","doi-asserted-by":"crossref","DOI":"10.1088\/1361-6641\/abd2fe","article-title":"An ultrathin-barrier AlGaN\/GaN heterostructure: a recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits","volume":"36","author":"Huang","year":"2021","journal-title":"Semicond. Sci. Technol."},{"issue":"1","key":"10.1016\/j.mejo.2026.107241_bib35","doi-asserted-by":"crossref","first-page":"36","DOI":"10.1109\/TED.2020.3037272","article-title":"Interface charge effects on 2-D electron gas in vertical-scaled ultrathin-barrier AlGaN\/GaN heterostructure","volume":"68","author":"Huang","year":"2021","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"4","key":"10.1016\/j.mejo.2026.107241_bib36","doi-asserted-by":"crossref","first-page":"525","DOI":"10.1109\/LED.2012.2186116","article-title":"MBE-regrown ohmics in InAlN HEMTs with a regrowth interface resistance of 0.05 \u03a9\u00b7mm","volume":"33","author":"Guo","year":"2012","journal-title":"IEEE Electron Device Lett."},{"issue":"21","key":"10.1016\/j.mejo.2026.107241_bib37","doi-asserted-by":"crossref","DOI":"10.1063\/5.0129997","article-title":"Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD","volume":"121","author":"Qie","year":"2022","journal-title":"Appl. Phys. Lett."},{"issue":"2","key":"10.1016\/j.mejo.2026.107241_bib38","doi-asserted-by":"crossref","first-page":"166","DOI":"10.1016\/j.mee.2010.10.005","article-title":"Effect of fluorine interface redistribution on performance of AlGaN\/GaN HEMTs","volume":"88","author":"Lalinsky","year":"2011","journal-title":"Microelectron. Eng."},{"issue":"6","key":"10.1016\/j.mejo.2026.107241_bib39","doi-asserted-by":"crossref","first-page":"1566","DOI":"10.1109\/TED.2007.896607","article-title":"Enhancement-mode AlN\/GaN HFETs using Cat-CVD SiN","volume":"54","author":"Higashiwaki","year":"2007","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"4S","key":"10.1016\/j.mejo.2026.107241_bib40","doi-asserted-by":"crossref","DOI":"10.1143\/JJAP.48.04C083","article-title":"Gate-recessed AlGaN\/GaN based enhancement-mode high electron mobility transistors for high frequency operation","volume":"48","author":"Maroldt","year":"2009","journal-title":"Jpn. J. Appl. Phys."},{"issue":"6","key":"10.1016\/j.mejo.2026.107241_bib41","doi-asserted-by":"crossref","first-page":"741","DOI":"10.1109\/LED.2013.2257657","article-title":"Gate-recessed integrated E\/D GaN HEMT technology with fT\/fmax >300 GHz","volume":"34","author":"Schuette","year":"2013","journal-title":"IEEE Electron Device Lett."},{"issue":"3","key":"10.1016\/j.mejo.2026.107241_bib42","doi-asserted-by":"crossref","first-page":"336","DOI":"10.1109\/LED.2013.2297433","article-title":"Monolithic integration of E\/D-Mode AlGaN\/GaN MIS-HEMTs","volume":"35","author":"Kong","year":"2014","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2026.107241_bib43","series-title":"Book normally-off AlGaN\/GaN Recessed MOS-HEMTs on Normally-on Epitaxial Structures for Microwave Power Applications","first-page":"65","article-title":"Ieee: \u2018normally-off AlGaN\/GaN recessed MOS-HEMTs on Normally-on epitaxial structures for microwave power applications","author":"Xuan","year":"2016"},{"issue":"7","key":"10.1016\/j.mejo.2026.107241_bib44","article-title":"1.5-V-threshold-voltage Schottky barrier normally-off AlGaN\/GaN high-electron-mobility transistors with fT\/fmax of 41\/125 GHz","volume":"10","author":"Hou","year":"2017","journal-title":"APEX"},{"issue":"6","key":"10.1016\/j.mejo.2026.107241_bib45","doi-asserted-by":"crossref","first-page":"365","DOI":"10.3938\/jkps.71.365","article-title":"Characteristics of enhanced-mode AlGaN\/GaN MIS HEMTs for millimeter wave applications","volume":"71","author":"Lee","year":"2017","journal-title":"J. Kor. Phys. Soc."},{"issue":"17","key":"10.1016\/j.mejo.2026.107241_bib46","doi-asserted-by":"crossref","DOI":"10.1063\/1.5008731","article-title":"90 nm gate length enhancement-mode AlGaN\/GaN HEMTs with plasma oxidation technology for high-frequency application","volume":"111","author":"Mi","year":"2017","journal-title":"Appl. Phys. Lett."},{"issue":"4","key":"10.1016\/j.mejo.2026.107241_bib47","doi-asserted-by":"crossref","first-page":"P197","DOI":"10.1149\/2.0181804jss","article-title":"DC and RF characteristics of enhancement-mode Al2O3\/AlGaN\/GaN MIS-HEMTs fabricated by shallow recess combined with fluorine-treatment and deep recess","volume":"7","author":"Jung","year":"2018","journal-title":"ECS J. Solid State Sci. Technol."},{"key":"10.1016\/j.mejo.2026.107241_bib48","series-title":"Proc. 2022 International Electron Devices Meeting (IEDM)","article-title":"Scaled submicron field-plated enhancement mode High-K gallium nitride transistors on 300mm Si(111) wafer with power FoM (RON xQGG) of 3.1 mohm-nC at 40V and fT\/fMAX of 130\/680GHz","author":"Then","year":"2022"},{"issue":"1","key":"10.1016\/j.mejo.2026.107241_bib49","doi-asserted-by":"crossref","first-page":"40","DOI":"10.1109\/LED.2024.3495672","article-title":"E-Mode AlN\/GaN HEMTs on Si With 80.4% PAE at 3.6 GHz for Low-Supply-Voltage RF Power Applications","volume":"46","author":"Gao","year":"2025","journal-title":"IEEE Electron Device Lett."},{"issue":"7","key":"10.1016\/j.mejo.2026.107241_bib50","doi-asserted-by":"crossref","first-page":"3469","DOI":"10.1109\/TED.2025.3568805","article-title":"High RF Performance Enhancement-Mode Thin-Barrier AlGaN\/GaN HEMTs on Si Substrate for Low-Voltage Applications","volume":"72","author":"Li","year":"2025","journal-title":"IEEE Trans. Electron. Dev."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126001979?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126001979?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2026,7,9]],"date-time":"2026-07-09T13:41:05Z","timestamp":1783604465000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S1879239126001979"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9]]},"references-count":50,"alternative-id":["S1879239126001979"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107241","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2026,9]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"A selective gate-recess and passivation integrated process for high-performance enhancement-mode GaN HEMTs on an ultrathin barrier","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107241","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2026 Published by Elsevier Ltd.","name":"copyright","label":"Copyright"}],"article-number":"107241"}}