{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,4]],"date-time":"2026-07-04T01:19:18Z","timestamp":1783127958662,"version":"3.54.6"},"reference-count":27,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T00:00:00Z","timestamp":1785542400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"funder":[{"DOI":"10.13039\/501100010877","name":"Science, Technology and Innovation Commission of Shenzhen Municipality","doi-asserted-by":"publisher","award":["KJZD20240903104002004"],"award-info":[{"award-number":["KJZD20240903104002004"]}],"id":[{"id":"10.13039\/501100010877","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2026,8]]},"DOI":"10.1016\/j.mejo.2026.107259","type":"journal-article","created":{"date-parts":[[2026,5,9]],"date-time":"2026-05-09T06:57:30Z","timestamp":1778309850000},"page":"107259","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":1,"special_numbering":"C","title":["Impact of DC current density on filling mechanism and microstructural evolution of metallization in TGV"],"prefix":"10.1016","volume":"174","author":[{"given":"Yangxu","family":"Qiao","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hongwei","family":"Chen","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ke","family":"Qin","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zihan","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Miao","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wenlei","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yong","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Dongbin","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Libin","family":"Gao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jihua","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"78","reference":[{"key":"10.1016\/j.mejo.2026.107259_bib1","doi-asserted-by":"crossref","first-page":"81","DOI":"10.1109\/MDAT.2023.3302809","article-title":"Furthering moore's law integration benefits in the Chiplet era","volume":"41","author":"Munoz","year":"2024","journal-title":"IEEE Des. Test"},{"key":"10.1016\/j.mejo.2026.107259_bib2","first-page":"15","article-title":"Ieee, the 3rd dimension - more life for Moore's law, international microsystems packaging","author":"Yu","year":"2006","journal-title":"Assembly Conference, Taipei, TAIWAN"},{"key":"10.1016\/j.mejo.2026.107259_bib3","series-title":"2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177)","first-page":"268","article-title":"Three-dimensional integrated circuits for low-power, high-bandwidth systems on a chip","author":"Burns","year":"2001"},{"key":"10.1016\/j.mejo.2026.107259_bib4","doi-asserted-by":"crossref","first-page":"129","DOI":"10.1109\/TDMR.2015.2397698","article-title":"Modeling and characterization of TSV capacitor and stable low-capacitance implementation for Wide-I\/O application","volume":"15","author":"Chang","year":"2015","journal-title":"IEEE Trans. Device Mater. Reliab."},{"key":"10.1016\/j.mejo.2026.107259_bib5","series-title":"2015 IEEE 33rd VLSI TEST SYMPOSIUM (VTS), Napa, CA","article-title":"Capacitive coupling mitigation for TSV-based 3D ICs","author":"Eghbal","year":"2015"},{"key":"10.1016\/j.mejo.2026.107259_bib6","doi-asserted-by":"crossref","first-page":"4554","DOI":"10.1109\/TED.2023.3299461","article-title":"General analytical method for investigating parasitic characteristics of through glass Vias (TGVs) in 3-D integration","volume":"70","author":"Li","year":"2023","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107259_bib7","series-title":"3rd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA), Zouk Mosbeh, LEBANON","first-page":"49","article-title":"Ieee, TGV versus TSV: a comparative analysis","author":"Salah","year":"2016"},{"key":"10.1016\/j.mejo.2026.107259_bib8","series-title":"IEEE 64th Electronic Components and Technology Conference (ECTC)","first-page":"2271","article-title":"Ieee, high-frequency characterization of through package vias formed by focused electrical-discharge in thin glass interposers","author":"Tong","year":"2014"},{"key":"10.1016\/j.mejo.2026.107259_bib9","series-title":"IEEE 61st Electronic Components and Technology Conference (ECTC)","first-page":"583","article-title":"Ieee, design, fabrication and characterization of low-cost glass interposers with fine-pitch through-package-vias","author":"Sukumaran","year":"2011"},{"key":"10.1016\/j.mejo.2026.107259_bib10","series-title":"Assembly and Circuits Technology Conference","first-page":"247","article-title":"Thin glass substrates development and integration for through glass vias (TGV) with copper (Cu) interconnects, 2012 7th International Microsystems, packaging","author":"Bor Kai","year":"2012"},{"key":"10.1016\/j.mejo.2026.107259_bib11","doi-asserted-by":"crossref","first-page":"1426","DOI":"10.1109\/TCPMT.2012.2204392","article-title":"Low-Cost thin glass interposers as a superior alternative to silicon and organic interposers for packaging of 3-D ICs","volume":"2","author":"Sukumaran","year":"2012","journal-title":"IEEE Trans. Compon. Packag. Manuf. Technol."},{"key":"10.1016\/j.mejo.2026.107259_bib12","series-title":"62nd IEEE Electronic Components and Technology Conference (ECTC), San Diego, CA","first-page":"1738","article-title":"Highly-reliable silicon and glass interposers-to-printed wiring board SMT interconnections: modeling, design, fabrication and reliability","author":"Qin","year":"2012"},{"key":"10.1016\/j.mejo.2026.107259_bib13","series-title":"IEEE 64th Electronic Components and Technology Conference (ECTC)","first-page":"20","article-title":"Ieee, advancements in fabrication of glass interposers","author":"Shorey","year":"2014"},{"key":"10.1016\/j.mejo.2026.107259_bib14","series-title":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","first-page":"1922","article-title":"Processing glass substrate for advanced packaging using laser induced deep etching","author":"Santos","year":"2020"},{"key":"10.1016\/j.mejo.2026.107259_bib15","series-title":"20th International Conference on Electronic Packaging Technology (ICEPT), Hong Kong, HONG KONG","article-title":"Ieee, development of laser-induced deep etching process for through glass via","author":"Chen","year":"2019"},{"key":"10.1016\/j.mejo.2026.107259_bib16","doi-asserted-by":"crossref","first-page":"54","DOI":"10.1109\/TMTT.2023.3280945","article-title":"Analysis and optimization of sidewall roughness on microwave performance of through-glass vias in 3-D integrated circuits","volume":"72","author":"Fang","year":"2024","journal-title":"IEEE Trans. Microw. Theor. Tech."},{"key":"10.1016\/j.mejo.2026.107259_bib17","doi-asserted-by":"crossref","first-page":"338","DOI":"10.1109\/T-ED.1969.16754","article-title":"Electromigration\u2014A brief survey and some recent results","volume":"16","author":"Black","year":"1969","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107259_bib18","series-title":"59th Electronic Components and Technology Conference, San Diego, CA","first-page":"630","article-title":"Thermo-mechanical reliability of 3-D ICs containing through silicon vias","author":"Lu","year":"2009"},{"key":"10.1016\/j.mejo.2026.107259_bib19","series-title":"2008 58th Electronic Components and Technology Conference","first-page":"1073","article-title":"Nonlinear thermal stress\/strain analyses of copper filled TSV (through silicon via) and their flip-chip microbumps","author":"Selvanayagam","year":"2008"},{"key":"10.1016\/j.mejo.2026.107259_bib20","doi-asserted-by":"crossref","first-page":"78","DOI":"10.1016\/j.tsf.2014.12.042","article-title":"Electron backscatter diffraction characterization of electrolytic Cu deposition in the blind-hole structure: current density effect","volume":"584","author":"Ho","year":"2015","journal-title":"Thin Solid Films"},{"key":"10.1016\/j.mejo.2026.107259_bib21","doi-asserted-by":"crossref","first-page":"3413","DOI":"10.1016\/j.tsf.2009.11.022","article-title":"Texture investigation in the trench depth direction of very fine copper wires less than 100 nm wide using electron backscatter diffraction","volume":"518","author":"Khoo","year":"2010","journal-title":"Thin Solid Films"},{"key":"10.1016\/j.mejo.2026.107259_bib22","doi-asserted-by":"crossref","first-page":"53","DOI":"10.1016\/j.microrel.2012.05.008","article-title":"Measurement and analysis of thermal stresses in 3D integrated structures containing through-silicon-vias","volume":"53","author":"Jiang","year":"2013","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/j.mejo.2026.107259_bib23","doi-asserted-by":"crossref","first-page":"D23","DOI":"10.1149\/2.010407eel","article-title":"Microstructures of copper electroplated through-silicon via characterized by electron backscattering diffraction technique","volume":"3","author":"Zhang","year":"2014","journal-title":"ECS Electrochem. Lett."},{"key":"10.1016\/j.mejo.2026.107259_bib24","doi-asserted-by":"crossref","first-page":"1008","DOI":"10.1016\/j.jmrt.2024.06.137","article-title":"Through glass via (TGV) copper metallization and its microstructure modification","volume":"31","author":"Chang","year":"2024","journal-title":"J. Mater. Res. Technol-Jmr&T"},{"key":"10.1016\/j.mejo.2026.107259_bib25","doi-asserted-by":"crossref","DOI":"10.1016\/j.actamat.2023.118898","article-title":"On the plastic deformation of a CoCrFeNiW-C alloy at elevated temperatures: part II. Grain boundary sliding and damage mechanisms","volume":"252","author":"Wei","year":"2023","journal-title":"Acta Mater."},{"key":"10.1016\/j.mejo.2026.107259_bib26","doi-asserted-by":"crossref","first-page":"624","DOI":"10.1016\/j.msea.2019.05.083","article-title":"In-situ EBSD study of deformation behaviour of 600 MPa grade dual phase steel during uniaxial tensile tests","volume":"759","author":"Li","year":"2019","journal-title":"Mater. Sci. Eng."},{"key":"10.1016\/j.mejo.2026.107259_bib27","doi-asserted-by":"crossref","DOI":"10.1007\/s11249-016-0805-5","article-title":"Indentation hardness measurements at Macro-, Micro-, and nanoscale: a critical overview","volume":"65","author":"Broitman","year":"2017","journal-title":"Tribol. Lett."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126002158?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126002158?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2026,7,4]],"date-time":"2026-07-04T00:37:23Z","timestamp":1783125443000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S1879239126002158"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,8]]},"references-count":27,"alternative-id":["S1879239126002158"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107259","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2026,8]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Impact of DC current density on filling mechanism and microstructural evolution of metallization in TGV","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107259","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2026 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}],"article-number":"107259"}}