{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,9]],"date-time":"2026-07-09T14:22:04Z","timestamp":1783606924056,"version":"3.55.0"},"reference-count":34,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"funder":[{"DOI":"10.13039\/501100002369","name":"Chongqing University","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100002369","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2026,9]]},"DOI":"10.1016\/j.mejo.2026.107340","type":"journal-article","created":{"date-parts":[[2026,6,23]],"date-time":"2026-06-23T07:33:43Z","timestamp":1782200023000},"page":"107340","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["A heterojunction short-gate dual-channel SiC MOSFET with reduced reverse cut-in voltage and switching loss"],"prefix":"10.1016","volume":"175","author":[{"given":"Lilu","family":"Feng","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Peng","family":"Sun","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuxi","family":"Liang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Huayang","family":"Zheng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ningyi","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mingrui","family":"Zou","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiakun","family":"Gong","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ruihong","family":"Luo","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zheng","family":"Zeng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"78","reference":[{"key":"10.1016\/j.mejo.2026.107340_bib1","doi-asserted-by":"crossref","first-page":"22","DOI":"10.1016\/j.mssp.2017.10.030","article-title":"Advanced processing for mobility improvement in 4H-SiC MOSFETs: a review","volume":"78","author":"Cabello","year":"2018","journal-title":"Mater. Sci. Semicond. Process."},{"issue":"10","key":"10.1016\/j.mejo.2026.107340_bib2","doi-asserted-by":"crossref","first-page":"8193","DOI":"10.1109\/TIE.2017.2652401","article-title":"Review of silicon carbide power devices and their applications","volume":"64","author":"She","year":"2017","journal-title":"IEEE Trans. Ind. Electron."},{"key":"10.1016\/j.mejo.2026.107340_bib3","series-title":"2014 IEEE 26th International Symposium on Power Semiconductor Devices & Ic's (ISPSD)","article-title":"Silicon carbide power MOSFETs: breakthrough performance from 900 V up to 15 kV","author":"Palmour","year":"2014"},{"issue":"7","key":"10.1016\/j.mejo.2026.107340_bib4","doi-asserted-by":"crossref","first-page":"1042","DOI":"10.3390\/mi13071042","article-title":"Effect of the oxidation process on carrier lifetime and on SF defects of 4H SiC thick epilayer for detection applications","volume":"13","author":"Meli","year":"2022","journal-title":"Micromachines"},{"key":"10.1016\/j.mejo.2026.107340_bib5","doi-asserted-by":"crossref","DOI":"10.1016\/j.micrna.2025.208126","article-title":"Silicon carbide MOSFETs: a critical review of applications, technological advancements, and future perspectives","volume":"202","author":"Sharmila","year":"2025","journal-title":"Micro Nanostruct."},{"issue":"4","key":"10.1016\/j.mejo.2026.107340_bib6","doi-asserted-by":"crossref","first-page":"658","DOI":"10.1109\/16.992876","article-title":"Status and prospects for SiC power MOSFETs","volume":"49","author":"Cooper","year":"2002","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"5","key":"10.1016\/j.mejo.2026.107340_bib7","doi-asserted-by":"crossref","first-page":"698","DOI":"10.1109\/LED.2019.2908253","article-title":"Study of asymmetric cell structure tilt implanted 4H-SiC trench MOSFET","volume":"40","author":"Ni","year":"2019","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2026.107340_bib8","series-title":"2023 IEEE International Reliability Physics Symposium (IRPS)","article-title":"Reliability comparison of commercial planar and trench 4H-SiC power MOSFETs","author":"Zhu","year":"2023"},{"key":"10.1016\/j.mejo.2026.107340_bib9","doi-asserted-by":"crossref","DOI":"10.1016\/j.jcrysgro.2022.127049","article-title":"Characterization of 1.2 kV 4H-SiC planar power MOSFETs","volume":"605","author":"Sang","year":"2023","journal-title":"J. Cryst. Growth"},{"issue":"3","key":"10.1016\/j.mejo.2026.107340_bib10","doi-asserted-by":"crossref","first-page":"674","DOI":"10.1109\/TED.2017.2653239","article-title":"The trench power MOSFET: part I\u2014history, technology, and prospects","volume":"64","author":"Williams","year":"2017","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107340_bib11","series-title":"2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (Wipda)","article-title":"Analysis of 1.2 kV 4H-SiC trench-gate MOSFETs with thick trench bottom oxide","author":"Agarwal","year":"2018"},{"issue":"7","key":"10.1016\/j.mejo.2026.107340_bib12","doi-asserted-by":"crossref","first-page":"8990","DOI":"10.1109\/TPEL.2023.3265864","article-title":"Review on the reliability mechanisms of SiC power MOSFETs: a comparison between planar-gate and trench-gate structures","volume":"38","author":"Wei","year":"2023","journal-title":"IEEE Trans. Power Electron."},{"issue":"17","key":"10.1016\/j.mejo.2026.107340_bib13","doi-asserted-by":"crossref","first-page":"1348","DOI":"10.1049\/el.2015.1493","article-title":"Integratable trench MOSFET with ultra\u2010low specific on\u2010resistance","volume":"51","author":"Yin","year":"2015","journal-title":"Electron. Lett."},{"key":"10.1016\/j.mejo.2026.107340_bib14","series-title":"2011 International Electron Devices Meeting","article-title":"High performance SiC trench devices with ultra-low ron","author":"Nakamura","year":"2011"},{"key":"10.1016\/j.mejo.2026.107340_bib15","series-title":"PCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management","article-title":"The evolution of commercial SiC FETs, from planar gates to reliable trench technology and towards superjunction devices","author":"Russell","year":"2023"},{"key":"10.1016\/j.mejo.2026.107340_bib16","doi-asserted-by":"crossref","first-page":"887","DOI":"10.1109\/OJPEL.2023.3326909","article-title":"Electrothermal power cycling to failure of discrete planar, symmetrical double-trench and asymmetrical trench SiC MOSFETs","volume":"4","author":"Yang","year":"2023","journal-title":"IEEE Open Journal of Power Electronics"},{"key":"10.1016\/j.mejo.2026.107340_bib17","article-title":"Increased channel mobility in 4H-SiC UMOSFETs using on-axis substrates","volume":"556","author":"Yano","year":"2007","journal-title":"Mater. Sci. Forum"},{"key":"10.1016\/j.mejo.2026.107340_bib18","series-title":"IEEE","first-page":"2127","article-title":"Characterization and modeling of SiC MOSFET body diode","author":"Peng","year":"2016"},{"key":"10.1016\/j.mejo.2026.107340_bib19","series-title":"2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)","article-title":"Third quadrant behavior of SiC MOSFETs","author":"Callanan","year":"2013"},{"issue":"10","key":"10.1016\/j.mejo.2026.107340_bib20","doi-asserted-by":"crossref","first-page":"8206","DOI":"10.1109\/TIE.2017.2696515","article-title":"On developing one-chip integration of 1.2 kV SiC MOSFET and JBS diode (JBSFET)","volume":"64","author":"Sung","year":"2017","journal-title":"IEEE Trans. Ind. Electron."},{"key":"10.1016\/j.mejo.2026.107340_bib21","series-title":"2015 IEEE 27th International Symposium on Power Semiconductor Devices & Ic's (ISPSD)","article-title":"1700V\/30A 4H-SiC MOSFET with low cut-in voltage embedded diode and room temperature boron implanted termination","author":"Yen","year":"2015"},{"key":"10.1016\/j.mejo.2026.107340_bib22","series-title":"2017 IEEE International Electron Devices Meeting (IEDM)","article-title":"Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS","author":"Kobayashi","year":"2017"},{"issue":"3","key":"10.1016\/j.mejo.2026.107340_bib23","doi-asserted-by":"crossref","first-page":"167","DOI":"10.1049\/el.2017.3198","article-title":"4H\u2010SiC trench MOSFET with integrated fast recovery MPS diode","volume":"54","author":"Dai","year":"2018","journal-title":"Electron. Lett."},{"key":"10.1016\/j.mejo.2026.107340_bib24","doi-asserted-by":"crossref","DOI":"10.1016\/j.mssp.2024.109026","article-title":"The relationship of voltage variations in the third quadrant and the Schottky area ratios in a 4H-SiC SBD-embedded MOSFET","volume":"186","author":"Liao","year":"2025","journal-title":"Mater. Sci. Semicond. Process."},{"issue":"12","key":"10.1016\/j.mejo.2026.107340_bib25","doi-asserted-by":"crossref","first-page":"1086","DOI":"10.1049\/el:19970678","article-title":"High voltage P+ polysilicon\/N-6H-SiC heterojunction diodes","volume":"33","author":"Shenoy","year":"1997","journal-title":"Electron. Lett."},{"key":"10.1016\/j.mejo.2026.107340_bib27","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2025.106821","article-title":"A double auxiliary gate SiC trench MOSFET with dynamic P-well control and integrated MOS-channel diode","author":"Chen","year":"2025","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107340_bib28","article-title":"An Asymmetric trench SiC MOSFET integrated recombination electrode with improved reverse conduction","author":"Chen","year":"2025","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107340_bib26","series-title":"TCAD Sentaurus Device Manual","year":"2013"},{"issue":"12","key":"10.1016\/j.mejo.2026.107340_bib33","doi-asserted-by":"crossref","first-page":"2310","DOI":"10.3390\/en12122310","article-title":"Characterization of SiO2\/4H-SiC interfaces in 4H-SiC MOSFETs: a review","volume":"12","author":"Fiorenza","year":"2019","journal-title":"Energies"},{"issue":"1","key":"10.1016\/j.mejo.2026.107340_bib34","doi-asserted-by":"crossref","first-page":"321","DOI":"10.1002\/1521-396X(199707)162:1<321::AID-PSSA321>3.0.CO;2-F","article-title":"Intrinsic sic\/sio2 interface states","volume":"162","author":"Afanasev","year":"1997","journal-title":"Phys. Status Solidi"},{"issue":"4","key":"10.1016\/j.mejo.2026.107340_bib29","doi-asserted-by":"crossref","first-page":"296","DOI":"10.1007\/s11664-998-0403-x","article-title":"Electrical characteristics of rectifying polycrystalline silicon\/silicon carbide heterojunctions","volume":"27","author":"Henning","year":"1998","journal-title":"J. Electron. Mater."},{"key":"10.1016\/j.mejo.2026.107340_bib32","article-title":"Novel low VON poly-Si\/4H-SiC heterojunction diode using energy barrier height control","volume":"717","author":"Yamagami","year":"2012","journal-title":"Mater. Sci. Forum"},{"key":"10.1016\/j.mejo.2026.107340_bib30","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2024.106436","article-title":"Asymmetric trench SiC MOSFET with integrated channel accumulation diode for enhanced reverse conduction and switching characteristics","volume":"153","author":"Gao","year":"2024","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107340_bib31","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2025.106702","article-title":"A process compatible SiC trench MOSFET integrated with double p+-polySi\/SiC HJD for enhanced switching performance","volume":"161","author":"Zhu","year":"2025","journal-title":"Microelectron. J."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126002961?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126002961?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2026,7,9]],"date-time":"2026-07-09T13:44:09Z","timestamp":1783604649000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S1879239126002961"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9]]},"references-count":34,"alternative-id":["S1879239126002961"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107340","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2026,9]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"A heterojunction short-gate dual-channel SiC MOSFET with reduced reverse cut-in voltage and switching loss","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107340","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2026 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}],"article-number":"107340"}}