{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T14:44:07Z","timestamp":1782917047996,"version":"3.54.5"},"reference-count":17,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T00:00:00Z","timestamp":1790812800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T00:00:00Z","timestamp":1790812800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T00:00:00Z","timestamp":1790812800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T00:00:00Z","timestamp":1790812800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T00:00:00Z","timestamp":1790812800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T00:00:00Z","timestamp":1790812800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T00:00:00Z","timestamp":1790812800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2026,10]]},"DOI":"10.1016\/j.mejo.2026.107341","type":"journal-article","created":{"date-parts":[[2026,6,26]],"date-time":"2026-06-26T23:41:39Z","timestamp":1782517299000},"page":"107341","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["Transfer-learning-enabled modeling of DEMOS devices for scalable semiconductor design with wafer-level validation"],"prefix":"10.1016","volume":"176","author":[{"given":"Yan","family":"Pan","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaoyun","family":"Huang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hongyu","family":"Tang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Boying","family":"Meng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Fang","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7792-8235","authenticated-orcid":false,"given":"Kai","family":"Xu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"78","reference":[{"key":"10.1016\/j.mejo.2026.107341_b1","first-page":"1","article-title":"Decoupling of mixed reliability degradation mechanisms in LDMOS using ultrafast measurement and neural network","author":"Guo","year":"2025","journal-title":"IEEE Trans. Electron Devices"},{"issue":"9","key":"10.1016\/j.mejo.2026.107341_b2","doi-asserted-by":"crossref","first-page":"5089","DOI":"10.1109\/TED.2025.3588137","article-title":"Meta-optimized LDMOS process\u2013device co-optimization: Extrapolation-enhanced modeling with wafer-level validation","volume":"72","author":"Zhu","year":"2025","journal-title":"IEEE Trans. Electron Devices"},{"issue":"9","key":"10.1016\/j.mejo.2026.107341_b3","doi-asserted-by":"crossref","first-page":"1593","DOI":"10.1109\/LED.2025.3586707","article-title":"Efficient LDMOS design via transferable surrogate models and multi-objective optimization","volume":"46","author":"Tang","year":"2025","journal-title":"IEEE Electron Device Lett."},{"issue":"5","key":"10.1016\/j.mejo.2026.107341_b4","doi-asserted-by":"crossref","first-page":"2625","DOI":"10.1109\/TED.2025.3556051","article-title":"Graph representation framework for accelerating atomic-level semiconductor device simulation","volume":"72","author":"Wang","year":"2025","journal-title":"IEEE Trans. Electron Devices"},{"issue":"3","key":"10.1016\/j.mejo.2026.107341_b5","doi-asserted-by":"crossref","first-page":"1282","DOI":"10.1109\/TED.2025.3533465","article-title":"A bottom-up machine-learning approach for efficient device simulation","volume":"72","author":"Xie","year":"2025","journal-title":"IEEE Trans. Electron Devices"},{"issue":"2","key":"10.1016\/j.mejo.2026.107341_b6","doi-asserted-by":"crossref","first-page":"550","DOI":"10.1109\/TED.2024.3517578","article-title":"Machine learning-based modeling and BV optimization for LDMOS with multifloating buried layers","volume":"72","author":"Cao","year":"2025","journal-title":"IEEE Trans. Electron Devices"},{"issue":"2","key":"10.1016\/j.mejo.2026.107341_b7","doi-asserted-by":"crossref","first-page":"976","DOI":"10.1109\/TED.2023.3345288","article-title":"Machine learning-assisted multiobjective optimization of advanced node gate-all-around transistor for logic and RF applications","volume":"71","author":"Ehteshamuddin","year":"2024","journal-title":"IEEE Trans. Electron Devices"},{"issue":"1","key":"10.1016\/j.mejo.2026.107341_b8","doi-asserted-by":"crossref","first-page":"213","DOI":"10.1109\/TED.2023.3336305","article-title":"ML-TCAD: Accelerating FeFET reliability analysis using machine learning","volume":"71","author":"Thomann","year":"2024","journal-title":"IEEE Trans. Electron Devices"},{"issue":"10","key":"10.1016\/j.mejo.2026.107341_b9","doi-asserted-by":"crossref","first-page":"4474","DOI":"10.1109\/TED.2019.2937786","article-title":"Prediction of process variation effect for ultrascaled GAA vertical FET devices using a machine learning approach","volume":"66","author":"Ko","year":"2019","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2026.107341_b10","series-title":"2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology","first-page":"1","article-title":"Application of machine learning method in the modeling and designing of semiconductor power devices","author":"Guo","year":"2022"},{"key":"10.1016\/j.mejo.2026.107341_b11","series-title":"2020 International Conference on Simulation of Semiconductor Processes and Devices","first-page":"47","article-title":"Automatic modeling of logic device performance based on machine learning and explainable AI","author":"Kim","year":"2020"},{"issue":"11","key":"10.1016\/j.mejo.2026.107341_b12","doi-asserted-by":"crossref","first-page":"5229","DOI":"10.1109\/TED.2020.3025982","article-title":"Speed up quantum transport device simulation on ferroelectric tunnel junction with machine learning methods","volume":"67","author":"Wu","year":"2020","journal-title":"IEEE Trans. Electron Devices"},{"issue":"1","key":"10.1016\/j.mejo.2026.107341_b13","doi-asserted-by":"crossref","first-page":"263","DOI":"10.1109\/TED.2023.3307051","article-title":"Improving semiconductor device modeling for electronic design automation by machine learning techniques","volume":"71","author":"Wang","year":"2024","journal-title":"IEEE Trans. Electron Devices"},{"issue":"3","key":"10.1016\/j.mejo.2026.107341_b14","doi-asserted-by":"crossref","first-page":"1318","DOI":"10.1109\/TED.2020.3048918","article-title":"Artificial neural network-based compact modeling methodology for advanced transistors","volume":"68","author":"Wang","year":"2021","journal-title":"IEEE Trans. Electron Devices"},{"key":"10.1016\/j.mejo.2026.107341_b15","series-title":"A Survey on Deep Transfer Learning","author":"Tan","year":"2018"},{"key":"10.1016\/j.mejo.2026.107341_b16","series-title":"2013 IEEE International Conference on Acoustics, Speech and Signal Processing","first-page":"7304","article-title":"Cross-language knowledge transfer using multilingual deep neural network with shared hidden layers","author":"Huang","year":"2013"},{"key":"10.1016\/j.mejo.2026.107341_b17","series-title":"How transferable are features in deep neural networks?","author":"Yosinski","year":"2014"}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126002973?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126002973?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T13:49:12Z","timestamp":1782913752000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S1879239126002973"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10]]},"references-count":17,"alternative-id":["S1879239126002973"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107341","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2026,10]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Transfer-learning-enabled modeling of DEMOS devices for scalable semiconductor design with wafer-level validation","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107341","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2026 Published by Elsevier Ltd.","name":"copyright","label":"Copyright"}],"article-number":"107341"}}