{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,9]],"date-time":"2026-07-09T14:21:10Z","timestamp":1783606870504,"version":"3.55.0"},"reference-count":28,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["2025SZRJJ1018"],"award-info":[{"award-number":["2025SZRJJ1018"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004731","name":"Natural Science Foundation of Zhejiang Province","doi-asserted-by":"publisher","award":["LY24F040004"],"award-info":[{"award-number":["LY24F040004"]}],"id":[{"id":"10.13039\/501100004731","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2026,9]]},"DOI":"10.1016\/j.mejo.2026.107343","type":"journal-article","created":{"date-parts":[[2026,6,22]],"date-time":"2026-06-22T23:28:51Z","timestamp":1782170931000},"page":"107343","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["TLP-based comparative analysis of gate-source ESD failure behavior in commercial E-mode 650\u202fV p-GaN HEMTs"],"prefix":"10.1016","volume":"175","author":[{"given":"Shi-Jin","family":"Liu","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ying","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Cheng-Hao","family":"Yu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hao-Min","family":"Guo","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"78","reference":[{"key":"10.1016\/j.mejo.2026.107343_bib1","doi-asserted-by":"crossref","DOI":"10.1149\/2162-8777\/ad905b","article-title":"Analysis of On-Resistance in 650-V enhancement-mode active-passivation p-GaN gate HEMT","volume":"13","author":"Wu","year":"2024","journal-title":"ECS J. Solid State Sci. Technol."},{"key":"10.1016\/j.mejo.2026.107343_bib2","doi-asserted-by":"crossref","DOI":"10.1088\/1361-6463\/aaaf9d","article-title":"The 2018 GaN power electronics roadmap","volume":"51","author":"Amano","year":"2018","journal-title":"J. Phys. D Appl. Phys."},{"key":"10.1016\/j.mejo.2026.107343_bib3","doi-asserted-by":"crossref","first-page":"8442","DOI":"10.1109\/TPEL.2023.3266365","article-title":"Stability, reliability, and robustness of GaN power devices: a review","volume":"38","author":"Kozak","year":"2023","journal-title":"IEEE Trans. Power Electron."},{"key":"10.1016\/j.mejo.2026.107343_bib4","doi-asserted-by":"crossref","first-page":"779","DOI":"10.1109\/TED.2017.2657579","article-title":"GaN-on-Si power technology: devices and applications","volume":"64","author":"Chen","year":"2017","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107343_bib5","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2024.106442","article-title":"A fin-gate p-GaN HEMT with high threshold voltage and improved dynamic performance","volume":"153","author":"Shen","year":"2024","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107343_bib6","doi-asserted-by":"crossref","first-page":"4810","DOI":"10.1109\/TED.2025.3592633","article-title":"The ESD robustness of Schottky-Gate p-GaN HEMT under different States","volume":"72","author":"Shi","year":"2025","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107343_bib7","series-title":"2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC)","first-page":"1","article-title":"The ESD behavior of enhancement GaN HEMT power device with p-GaN gate structure","author":"Feng","year":"2018"},{"key":"10.1016\/j.mejo.2026.107343_bib8","doi-asserted-by":"crossref","first-page":"3756","DOI":"10.1109\/TED.2019.2926781","article-title":"ESD reliability of AlGaN\/GaN HEMT technology","volume":"66","author":"Shankar","year":"2019","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107343_bib9","series-title":"2025 IEEE International Symposium on Circuits and Systems (ISCAS)","first-page":"1","article-title":"On-Chip I\/O ESD protection for GaN-on-SOI integrated circuits","author":"Samperi","year":"2025"},{"key":"10.1016\/j.mejo.2026.107343_bib10","doi-asserted-by":"crossref","first-page":"1269","DOI":"10.3390\/mi16111269","article-title":"The ESD robustness and protection technology of P-GaN HEMT","volume":"16","author":"Shi","year":"2025","journal-title":"Micromachines"},{"key":"10.1016\/j.mejo.2026.107343_bib11","doi-asserted-by":"crossref","DOI":"10.1088\/2631-8695\/ad2f84","article-title":"In-situ S\/TEM DC biasing of p-GaN\/AlGaN\/GaN heterostructure for E-mode GaN HEMT devices","volume":"6","author":"Mehta","year":"2024","journal-title":"Eng. Res. Express"},{"key":"10.1016\/j.mejo.2026.107343_bib12","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2025.106905","article-title":"An integrated GaN PNP bipolar junction transistor for ESD applications","volume":"166","author":"Zhang","year":"2025","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107343_bib13","doi-asserted-by":"crossref","first-page":"1491","DOI":"10.1109\/LED.2013.2283865","article-title":"Development of an electrostatic discharge protection solution in GaN technology","volume":"34","author":"Wang","year":"2013","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2026.107343_bib14","doi-asserted-by":"crossref","DOI":"10.1088\/1361-6463\/ad8010","article-title":"Physical understanding of a normally off p-GaN\/AlGaN\/GaN HEMT gate stack and a review of VTH measurement techniques","volume":"58","author":"Murukesan","year":"2025","journal-title":"J. Phys. D Appl. Phys."},{"key":"10.1016\/j.mejo.2026.107343_bib15","doi-asserted-by":"crossref","DOI":"10.1149\/2162-8777\/ad1f93","article-title":"An AlGaN-GaN HEMT with p-GaN extended gate for improvements on current dispersion and breakdown characteristics","volume":"13","author":"Sriramadasu","year":"2024","journal-title":"ECS J. Solid State Sci. Technol."},{"key":"10.1016\/j.mejo.2026.107343_bib16","doi-asserted-by":"crossref","first-page":"2229","DOI":"10.1109\/TED.2023.3257282","article-title":"A comparative study on G-to-S ESD robustness of the ohmic-gate and schottky-gate p-GaN HEMTs","volume":"70","author":"Shi","year":"2023","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107343_bib17","series-title":"IECON 2021-47th Annual Conference of the IEEE Industrial Electronics Society","first-page":"1","article-title":"TVS diode coupled gate driver circuit for series connected power devices used in circuit breaker applications","author":"Ravi","year":"2021"},{"key":"10.1016\/j.mejo.2026.107343_bib18","doi-asserted-by":"crossref","first-page":"209","DOI":"10.1109\/LED.2022.3227321","article-title":"Experimental demonstration of an integrated bidirectional gate ESD protection structure for p-GaN power HEMTs","volume":"44","author":"Xin","year":"2023","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2026.107343_bib19","doi-asserted-by":"crossref","first-page":"3648","DOI":"10.1109\/TED.2022.3172057","article-title":"A novel gate-to-source ESD protection clamp for GaN HEMT","volume":"69","author":"Shi","year":"2022","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107343_bib20","series-title":"2022 IEEE International Reliability Physics Symposium (IRPS)","article-title":"Incorporation of a simple ESD circuit in a 650V E-Mode GaN HEMT for all-terminal ESD protection","author":"Lee","year":"2022"},{"key":"10.1016\/j.mejo.2026.107343_bib21","series-title":"2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (Wipda)","first-page":"175","article-title":"On-Chip gate ESD protection for AlGaN\/GaN E-Mode power HEMT delivering >2kV HBM ESD capability","author":"Zhou","year":"2019"},{"key":"10.1016\/j.mejo.2026.107343_bib22","series-title":"2024 36th International Symposium on Power Semiconductor Devices and Ics (ISPSD)","first-page":"538","article-title":"Comprehensive study of human-body-model electrostatic discharge on p-GaN gate power HEMT with AlGaN barrier spacers","author":"Huang","year":"2024"},{"key":"10.1016\/j.mejo.2026.107343_bib23","series-title":"2024 36th International Symposium on Power Semiconductor Devices and Ics (ISPSD)","first-page":"1","article-title":"Improved gate ESD behaviors of p-GaN power HEMTs by hybrid gate technology","author":"Ma","year":"2024"},{"key":"10.1016\/j.mejo.2026.107343_bib24","doi-asserted-by":"crossref","first-page":"3418","DOI":"10.1109\/TIM.2009.2017657","article-title":"ESD On-Wafer characterization: is TLP still the right measurement tool?","volume":"58","author":"Scholz","year":"2009","journal-title":"IEEE Trans. Instrum. Meas."},{"key":"10.1016\/j.mejo.2026.107343_bib25","doi-asserted-by":"crossref","first-page":"1922","DOI":"10.1109\/LED.2024.3435328","article-title":"Improving and modeling forward gate ESD behaviors of p-GaN power HEMTs by hybrid gate technology","volume":"45","author":"Ma","year":"2024","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2026.107343_bib26","series-title":"2020 32nd International Symposium on Power Semiconductor Devices and Ics (ISPSD)","first-page":"317","article-title":"Electrostatic discharge (ESD) behavior of p-GaN HEMTs","author":"Xin","year":"2020"},{"key":"10.1016\/j.mejo.2026.107343_bib27","doi-asserted-by":"crossref","first-page":"4921","DOI":"10.1109\/TPEL.2020.3032917","article-title":"A 4H-SiC MOSFET-based ESD protection with improved snapback characteristics for high-voltage applications","volume":"36","author":"Do","year":"2021","journal-title":"IEEE Trans. Power Electron."},{"key":"10.1016\/j.mejo.2026.107343_bib28","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2025.106812","article-title":"Interrupted field-stop layer reverse conducting MOS controlled thyristor and mitigation of the voltage snapback","volume":"164","author":"Li","year":"2025","journal-title":"Microelectron. J."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126002997?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126002997?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2026,7,9]],"date-time":"2026-07-09T13:43:00Z","timestamp":1783604580000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S1879239126002997"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9]]},"references-count":28,"alternative-id":["S1879239126002997"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107343","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2026,9]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"TLP-based comparative analysis of gate-source ESD failure behavior in commercial E-mode 650\u202fV p-GaN HEMTs","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107343","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2026 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}],"article-number":"107343"}}