{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,9]],"date-time":"2026-07-09T14:18:42Z","timestamp":1783606722727,"version":"3.55.0"},"reference-count":57,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T00:00:00Z","timestamp":1788220800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002865","name":"Chongqing Municipal Science and Technology Bureau","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100002865","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2026,9]]},"DOI":"10.1016\/j.mejo.2026.107346","type":"journal-article","created":{"date-parts":[[2026,6,28]],"date-time":"2026-06-28T14:23:42Z","timestamp":1782656622000},"page":"107346","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["5\u202fkV NiO\/\u03b2-Ga2O3 heterojunction diodes with dual-layer spatially modulated JTE and \u00b179% process tolerance"],"prefix":"10.1016","volume":"175","author":[{"ORCID":"https:\/\/orcid.org\/0009-0006-6932-1795","authenticated-orcid":false,"given":"Fushuang","family":"Qin","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1370-7235","authenticated-orcid":false,"given":"Fei","family":"Liao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-1192-2670","authenticated-orcid":false,"given":"Jinle","family":"You","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaoyang","family":"Yu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shuanghong","family":"Song","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ping","family":"Zhou","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2200-5091","authenticated-orcid":false,"given":"Xiaozhan","family":"Yang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4710-3640","authenticated-orcid":false,"given":"Wenlin","family":"Feng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"78","reference":[{"key":"10.1016\/j.mejo.2026.107346_bib1","doi-asserted-by":"crossref","first-page":"1870","DOI":"10.3390\/ma17081870","article-title":"A review of \u03b2-Ga2O3 power diodes","volume":"17","author":"He","year":"2024","journal-title":"Materials"},{"key":"10.1016\/j.mejo.2026.107346_bib2","doi-asserted-by":"crossref","first-page":"3900","DOI":"10.1038\/s41467-022-31664-y","article-title":"Ultra-wide bandgap semiconductor Ga2O3 power diodes","volume":"13","author":"Zhang","year":"2022","journal-title":"Nat. Commun."},{"key":"10.1016\/j.mejo.2026.107346_bib3","doi-asserted-by":"crossref","first-page":"364","DOI":"10.3390\/inorganics13110364","article-title":"Recent progress of \u03b2-Ga2O3 power diodes: a comprehensive review","volume":"13","author":"Zhang","year":"2025","journal-title":"Inorganics"},{"key":"10.1016\/j.mejo.2026.107346_bib4","article-title":"Recent advanced ultra\u2010wide bandgap \u03b2\u2010Ga2O3 material and device technologies","volume":"11","author":"Sun","year":"2024","journal-title":"Adv. Electron. Mater."},{"key":"10.1016\/j.mejo.2026.107346_bib5","doi-asserted-by":"crossref","DOI":"10.1063\/1.5006941","article-title":"A review of Ga2O3 materials, processing, and devices","volume":"5","author":"Pearton","year":"2018","journal-title":"Appl. Phys. Rev."},{"key":"10.1016\/j.mejo.2026.107346_bib6","article-title":"A strategic review on gallium oxide based power electronics: recent progress and future prospects","volume":"33","author":"Shivani","year":"2022","journal-title":"Mater. Today Commun."},{"key":"10.1016\/j.mejo.2026.107346_bib7","doi-asserted-by":"crossref","first-page":"36070","DOI":"10.1021\/acsomega.2c03345","article-title":"State-of-the-Art \u03b2-Ga2O3 field-effect transistors for power electronics","volume":"7","author":"Liu","year":"2022","journal-title":"ACS Omega"},{"key":"10.1016\/j.mejo.2026.107346_bib8","doi-asserted-by":"crossref","first-page":"804","DOI":"10.1016\/j.fmre.2023.10.008","article-title":"Gallium oxide (Ga2O3) heterogeneous and heterojunction power devices","volume":"5","author":"Li","year":"2025","journal-title":"Fundam. Res."},{"key":"10.1016\/j.mejo.2026.107346_bib9","doi-asserted-by":"crossref","first-page":"1234","DOI":"10.3390\/electronics13071234","article-title":"\u03b2-Ga2O3-Based heterostructures and heterojunctions for power electronics: a review of the recent advances","volume":"13","author":"Herath Mudiyanselage","year":"2024","journal-title":"Electronics"},{"key":"10.1016\/j.mejo.2026.107346_bib10","doi-asserted-by":"crossref","first-page":"334","DOI":"10.1109\/JEDS.2025.3556408","article-title":"Proposal and simulation of \u03b2-Ga2O3 Hetero- junction schottky diodes with low work-function anode and high breakdown voltage","volume":"13","author":"Wang","year":"2025","journal-title":"IEEE J. Electron Devices Soc."},{"key":"10.1016\/j.mejo.2026.107346_bib11","doi-asserted-by":"crossref","first-page":"6934","DOI":"10.1109\/TED.2024.3469909","article-title":"Low Turn-On voltage and reverse leakage current \u03b2 -Ga2O3 MIS schottky barrier diodes with an AlN interfacial layer","volume":"71","author":"Hong","year":"2024","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107346_bib12","doi-asserted-by":"crossref","DOI":"10.1063\/5.0044130","article-title":"\u03b2-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2\/Ron,sp value of 0.93 GW\/cm2","volume":"118","author":"Yan","year":"2021","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mejo.2026.107346_bib13","doi-asserted-by":"crossref","DOI":"10.1063\/5.0128736","article-title":"Leakage current reduction in \u03b2-Ga2O3 Schottky barrier diode with p-NiOx guard ring","volume":"121","author":"Hong","year":"2022","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mejo.2026.107346_bib14","doi-asserted-by":"crossref","first-page":"5722","DOI":"10.1109\/TED.2022.3200642","article-title":"Optimization of NiO\/\u03b2-Ga2O3 heterojunction diodes for high-power application","volume":"69","author":"Liao","year":"2022","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107346_bib15","doi-asserted-by":"crossref","DOI":"10.1063\/5.0010052","article-title":"A 1.86-kV double-layered NiO\/\u03b2-Ga2O3 vertical p\u2013n heterojunction diode","volume":"117","author":"Gong","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mejo.2026.107346_bib16","doi-asserted-by":"crossref","first-page":"3743","DOI":"10.1109\/TPEL.2021.3123940","article-title":"2.41 kV vertical P-Nio\/n-Ga2O3 heterojunction diodes with a record Baliga's figure-of-merit of 5.18 GW\/cm2","volume":"37","author":"Wang","year":"2022","journal-title":"IEEE Trans. Power Electron."},{"key":"10.1016\/j.mejo.2026.107346_bib17","doi-asserted-by":"crossref","DOI":"10.1063\/5.0185566","article-title":"Reliable operation of Cr2O3:Mg\/\u03b2-Ga2O3 p\u2013n heterojunction diodes at 600 \u00b0C","volume":"124","author":"Callahan","year":"2024","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mejo.2026.107346_bib18","doi-asserted-by":"crossref","DOI":"10.1063\/5.0083032","article-title":"SnO\/\u03b2-Ga2O3 heterojunction field-effect transistors and vertical p\u2013n diodes","volume":"120","author":"Tetzner","year":"2022","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mejo.2026.107346_bib19","doi-asserted-by":"crossref","DOI":"10.1063\/5.0031442","article-title":"SnO\/\u03b2-Ga2O3 vertical pn heterojunction diodes","volume":"117","author":"Budde","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mejo.2026.107346_bib20","doi-asserted-by":"crossref","DOI":"10.1063\/1.4998311","article-title":"Heterojunction p-Cu2O\/n-Ga2O3 diode with high breakdown voltage","volume":"111","author":"Watahiki","year":"2017","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mejo.2026.107346_bib21","doi-asserted-by":"crossref","DOI":"10.1063\/5.0168841","article-title":"Electrical properties of vertical Cu2O\/\u03b2-Ga2O3 (001) p\u2013n diodes","volume":"13","author":"Jia","year":"2023","journal-title":"AIP Adv."},{"key":"10.1016\/j.mejo.2026.107346_bib22","doi-asserted-by":"crossref","first-page":"2129","DOI":"10.1109\/TED.2023.3241885","article-title":"Improved vertical \u03b2-Ga2O3 schottky barrier diodes with conductivity-modulated p-NiO junction termination extension","volume":"70","author":"Hao","year":"2023","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107346_bib23","doi-asserted-by":"crossref","first-page":"221","DOI":"10.1109\/LED.2022.3229222","article-title":"2.5 kV vertical Ga2O3 schottky rectifier with graded junction termination extension","volume":"44","author":"Wang","year":"2023","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2026.107346_bib24","series-title":"2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","first-page":"361","article-title":"3.9 kV vertical \u03b2-Ga2O3 hetero-junction diode with high-temperature operational capability","author":"Wan","year":"2025"},{"key":"10.1016\/j.mejo.2026.107346_bib25","doi-asserted-by":"crossref","DOI":"10.1063\/5.0142229","article-title":"NiO junction termination extension for high-voltage (>3 kV) Ga2O3 devices","volume":"122","author":"Xiao","year":"2023","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.mejo.2026.107346_bib26","doi-asserted-by":"crossref","DOI":"10.1149\/2162-8777\/ac66fd","article-title":"Design of a 6 kV \u03b2-Ga2O3 PN heterojunction diode with etched double-layered NiO with a figure of merit of 10 GW cm\u22122","volume":"11","author":"Zhang","year":"2022","journal-title":"ECS J. Solid State Sci. Technol."},{"key":"10.1016\/j.mejo.2026.107346_bib27","doi-asserted-by":"crossref","DOI":"10.1016\/j.mssp.2024.108987","article-title":"Effect of p-NiOx junction termination extension on interface states in NiOx\/\u03b2-Ga2O3 heterojunction diodes","volume":"185","author":"Hong","year":"2025","journal-title":"Mater. Sci. Semicond. Process."},{"key":"10.1016\/j.mejo.2026.107346_bib28","doi-asserted-by":"crossref","first-page":"373","DOI":"10.1109\/JEDS.2025.3562028","article-title":"3kV NiO\/Ga2O3 heterojunction diodes with space-modulated junction termination extension and Sub-1V Turn-On","volume":"13","author":"Gilankar","year":"2025","journal-title":"IEEE J. Electron Devices Soc."},{"key":"10.1016\/j.mejo.2026.107346_bib29","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2024.106387","article-title":"Expanding the dose window of step-etched space-modulated JTE for ultrahigh voltage 4H-SiC devices","volume":"152","author":"Geng","year":"2024","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107346_bib30","doi-asserted-by":"crossref","first-page":"610","DOI":"10.3390\/mi9120610","article-title":"Step-Double-Zone-JTE for SiC devices with increased tolerance to JTE dose and surface charges","volume":"9","author":"Huang","year":"2018","journal-title":"Micromachines"},{"key":"10.1016\/j.mejo.2026.107346_bib31","doi-asserted-by":"crossref","first-page":"1162","DOI":"10.1109\/TED.2020.3047348","article-title":"A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices","volume":"68","author":"Dai","year":"2021","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107346_bib39","doi-asserted-by":"crossref","DOI":"10.1088\/0268-1242\/31\/3\/034001","article-title":"Recent progress in Ga2O3 power devices","volume":"31","author":"Higashiwaki","year":"2016","journal-title":"Semicond. Sci. Technol."},{"key":"10.1016\/j.mejo.2026.107346_bib40","doi-asserted-by":"crossref","DOI":"10.1063\/5.0032102","article-title":"Identification of LiNi and VNi acceptor levels in doped nickel oxide","volume":"8","author":"Karsthof","year":"2020","journal-title":"APL Mater."},{"key":"10.1016\/j.mejo.2026.107346_bib41","doi-asserted-by":"crossref","first-page":"1124","DOI":"10.3390\/cryst13071124","article-title":"The optimization of NiO doping, thickness, and extension in kV-Class NiO\/Ga2O3 vertical rectifiers","volume":"13","author":"Chiang","year":"2023","journal-title":"Crystals"},{"key":"10.1016\/j.mejo.2026.107346_bib42","doi-asserted-by":"crossref","first-page":"886","DOI":"10.3390\/cryst13060886","article-title":"Reproducible NiO\/Ga2O3 vertical rectifiers with breakdown voltage >8 kV","volume":"13","author":"Li","year":"2023","journal-title":"Crystals"},{"key":"10.1016\/j.mejo.2026.107346_bib32","doi-asserted-by":"crossref","first-page":"449","DOI":"10.1109\/LED.2020.2967418","article-title":"1-kV sputtered p-NiO\/n-Ga2O3 heterojunction diodes with an ultra-low leakage current below 1\u03bcA\/cm2","volume":"41","author":"Lu","year":"2020","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2026.107346_bib33","doi-asserted-by":"crossref","DOI":"10.1149\/2162-8777\/acf5a1","article-title":"Novel vertical fin-based NiO\/\u03b2-Ga2O3 heterojunction field-effect transistor with a low Ron,sp","volume":"12","author":"Huang","year":"2023","journal-title":"ECS J. Solid State Sci. Technol."},{"key":"10.1016\/j.mejo.2026.107346_bib34","doi-asserted-by":"crossref","first-page":"1183","DOI":"10.1109\/JEDS.2025.3571053","article-title":"Theoretical analysis of vertical \u03b2-Ga2O3 schottky barrier diodes with p-NiO field limiting rings for high P-FOM performance","volume":"13","author":"Ma","year":"2025","journal-title":"IEEE J. Electron Devices Soc."},{"key":"10.1016\/j.mejo.2026.107346_bib35","doi-asserted-by":"crossref","first-page":"981","DOI":"10.1109\/TED.2022.3143491","article-title":"Majority and minority carrier traps in NiO\/\u03b2-Ga2O3 p+-n heterojunction diode","volume":"69","author":"Wang","year":"2022","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107346_bib36","doi-asserted-by":"crossref","DOI":"10.1088\/1674-1056\/27\/1\/017305","article-title":"Novel hole transport layer of nickel oxide composite with carbon for high-performance perovskite solar cells","volume":"27","author":"Sajid","year":"2018","journal-title":"Chin. Phys. B"},{"key":"10.1016\/j.mejo.2026.107346_bib37","doi-asserted-by":"crossref","DOI":"10.1063\/5.0283247","article-title":"The characterization and understanding of electrically active defects in the HfO2\/\u03b2-Ga2O3(201) MOS system","volume":"13","author":"Agrawal","year":"2025","journal-title":"APL Mater."},{"key":"10.1016\/j.mejo.2026.107346_bib38","article-title":"Interface engineering of \u03b2-Ga2O3 MOS-type Schottky barrier diode using an ultrathin HfO2 interlayer","volume":"33","author":"Labed","year":"2022","journal-title":"Surf. Interfaces"},{"key":"10.1016\/j.mejo.2026.107346_bib43","doi-asserted-by":"crossref","DOI":"10.1016\/j.mejo.2024.106325","article-title":"Novel superjunction Fin-based NiO\/\u03b2-Ga2O3 HJFET with additional surface drift region channels for record-high performance","volume":"151","author":"Huang","year":"2024","journal-title":"Microelectron. J."},{"key":"10.1016\/j.mejo.2026.107346_bib44","doi-asserted-by":"crossref","DOI":"10.1116\/6.0002722","article-title":"Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 \u03bcm diameter and 4 kV\/4 A in 1 mm diameter NiO\/\u03b2-Ga2O3 rectifiers","volume":"41","author":"Li","year":"2023","journal-title":"J. Vac. Sci. Technol. A"},{"key":"10.1016\/j.mejo.2026.107346_bib45","doi-asserted-by":"crossref","DOI":"10.35848\/1347-4065\/acb2d7","article-title":"Large critical field of Li-doped NiO investigated by p+-NiO\/n+-Ga2O3 heterojunction diodes","volume":"62","author":"Danno","year":"2023","journal-title":"Jpn. J. Appl. Phys."},{"key":"10.1016\/j.mejo.2026.107346_bib46","doi-asserted-by":"crossref","first-page":"Q3221","DOI":"10.1149\/2.0391907jss","article-title":"Comparison of dual-stack dielectric field plates on \u03b2-Ga2O3 schottky rectifiers","volume":"8","author":"Carey","year":"2019","journal-title":"ECS J. Solid State Sci. Technol."},{"key":"10.1016\/j.mejo.2026.107346_bib47","doi-asserted-by":"crossref","DOI":"10.1016\/j.apsusc.2023.156917","article-title":"Band alignment and electrical properties of NiO\/\u03b2-Ga2O3 heterojunctions with different \u03b2-Ga2O3 orientations","volume":"622","author":"Deng","year":"2023","journal-title":"Appl. Surf. Sci."},{"key":"10.1016\/j.mejo.2026.107346_bib48","doi-asserted-by":"crossref","first-page":"3341","DOI":"10.1109\/TED.2020.3001249","article-title":"Band alignment and interface recombination in NiO\/\u03b2-Ga2O3 Type-II p-n heterojunctions","volume":"67","author":"Gong","year":"2020","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107346_bib49","doi-asserted-by":"crossref","first-page":"33","DOI":"10.1016\/j.mee.2017.03.015","article-title":"Fabrication of a nano-scaled tri-gate field effect transistor using the step-down patterning and dummy gate processes","volume":"173","author":"Lee","year":"2017","journal-title":"Microelectron. Eng."},{"key":"10.1016\/j.mejo.2026.107346_bib50","doi-asserted-by":"crossref","first-page":"1261","DOI":"10.1109\/LED.2024.3406529","article-title":"A novel tapered doping tail modulated single junction termination extension for high voltage 4H-SiC devices","volume":"45","author":"Han","year":"2024","journal-title":"IEEE Electron Device Lett."},{"key":"10.1016\/j.mejo.2026.107346_bib51","doi-asserted-by":"crossref","first-page":"68","DOI":"10.1109\/JEDS.2020.3039979","article-title":"High-performance GaN vertical p-i-n diodes via silicon nitride shadowed selective-area growth and optimized FGR- and JTE-based edge termination","volume":"9","author":"Sarker","year":"2021","journal-title":"IEEE J. Electron Devices Soc."},{"key":"10.1016\/j.mejo.2026.107346_bib52","doi-asserted-by":"crossref","first-page":"813","DOI":"10.1007\/s42835-025-02534-6","article-title":"Process-Robust stepped-ring-assisted junction termination extension design for 6.5 kV SiC PiN diodes","volume":"21","author":"Choi","year":"2025","journal-title":"J. Electr. Eng. Technol."},{"key":"10.1016\/j.mejo.2026.107346_bib53","doi-asserted-by":"crossref","first-page":"1193","DOI":"10.1109\/TED.2017.2648886","article-title":"Step JTE, an edge termination for UHV SiC power devices with increased tolerances to JTE dose and surface charges","volume":"64","author":"Zhou","year":"2017","journal-title":"IEEE Trans. Electron. Dev."},{"key":"10.1016\/j.mejo.2026.107346_bib54","doi-asserted-by":"crossref","first-page":"221","DOI":"10.1186\/s11671-020-03443-5","article-title":"Characterization and fabrication of the CFM-JTE for 4H-SiC power device with high-efficiency protection and increased JTE dose tolerance window","volume":"15","author":"Wen","year":"2020","journal-title":"Nanoscale Res. Lett."},{"key":"10.1016\/j.mejo.2026.107346_bib55","doi-asserted-by":"crossref","first-page":"47","DOI":"10.3390\/mi16010047","article-title":"Designs of charge-balanced edge termination structures for 3.3 kV SiC power devices using PN multi-epitaxial layers","volume":"16","author":"Kim","year":"2024","journal-title":"Micromachines"},{"key":"10.1016\/j.mejo.2026.107346_bib56","doi-asserted-by":"crossref","first-page":"1051","DOI":"10.1007\/s42835-024-02130-0","article-title":"A comprehensive design of edge terminations for high-voltage SiC devices utilizing P-Type epitaxial layer","volume":"20","author":"Kim","year":"2025","journal-title":"J. Electr. Eng. Technol."},{"key":"10.1016\/j.mejo.2026.107346_bib57","doi-asserted-by":"crossref","first-page":"16","DOI":"10.1007\/s00339-021-05168-3","article-title":"A multiple-floating-zone-assisted graded-step-JTE for high-voltage 4H-SiC GTO thyristor","volume":"128","author":"Xu","year":"2021","journal-title":"Appl. Phys. A"}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126003024?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S1879239126003024?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2026,7,9]],"date-time":"2026-07-09T13:40:22Z","timestamp":1783604422000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S1879239126003024"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9]]},"references-count":57,"alternative-id":["S1879239126003024"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107346","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2026,9]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"5\u202fkV NiO\/\u03b2-Ga2O3 heterojunction diodes with dual-layer spatially modulated JTE and \u00b179% process tolerance","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2026.107346","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2026 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}],"article-number":"107346"}}