{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,11]],"date-time":"2025-11-11T13:04:23Z","timestamp":1762866263482},"reference-count":13,"publisher":"Elsevier BV","issue":"9-11","content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2013,9]]},"DOI":"10.1016\/j.microrel.2013.07.020","type":"journal-article","created":{"date-parts":[[2013,10,12]],"date-time":"2013-10-12T17:17:30Z","timestamp":1381598250000},"page":"1491-1495","update-policy":"http:\/\/dx.doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":11,"title":["Influence of gate leakage current on AlGaN\/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements"],"prefix":"10.1016","volume":"53","author":[{"given":"S.","family":"Karboyan","sequence":"first","affiliation":[]},{"given":"J.G.","family":"Tartarin","sequence":"additional","affiliation":[]},{"given":"M.","family":"Rzin","sequence":"additional","affiliation":[]},{"given":"L.","family":"Brunel","sequence":"additional","affiliation":[]},{"given":"A.","family":"Curutchet","sequence":"additional","affiliation":[]},{"given":"N.","family":"Malbert","sequence":"additional","affiliation":[]},{"given":"N.","family":"Labat","sequence":"additional","affiliation":[]},{"given":"D.","family":"Carisetti","sequence":"additional","affiliation":[]},{"given":"B.","family":"Lambert","sequence":"additional","affiliation":[]},{"given":"M.","family":"Mermoux","sequence":"additional","affiliation":[]},{"given":"E.","family":"Romain-Latu","sequence":"additional","affiliation":[]},{"given":"F.","family":"Thomas","sequence":"additional","affiliation":[]},{"given":"C.","family":"Bouexi\u00e8re","sequence":"additional","affiliation":[]},{"given":"C.","family":"Moreau","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.microrel.2013.07.020_b0005","doi-asserted-by":"crossref","unstructured":"H. Morkoc, Handbook of Nitride Semiconductors and Devices, Wiley-VCH Verlag GmbH and Co. KGaA, 2009.","DOI":"10.1002\/9783527628445"},{"key":"10.1016\/j.microrel.2013.07.020_b0010","unstructured":"C. Charbonniaud, et al., in: 11th GAAS Symp. Munich, Germany, Oct. 6\u20137, 2003, pp. 201\u2013204."},{"issue":"3","key":"10.1016\/j.microrel.2013.07.020_b0070","doi-asserted-by":"crossref","first-page":"410","DOI":"10.1109\/TED.2006.890592","volume":"541","author":"Tirado","year":"2007","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2013.07.020_b0020","unstructured":"J.G. Tartarin, G. Astre, S. Karboyan, T. Noutsa, B. Lambert, in: Proceedings IWS 2013, April 2013, Beijing, China."},{"issue":"8","key":"10.1016\/j.microrel.2013.07.020_b0025","doi-asserted-by":"crossref","first-page":"1413","DOI":"10.1109\/22.780388","volume":"47","author":"Balandin","year":"1999","journal-title":"IEEE Trans. Microwave Theory Techn."},{"key":"10.1016\/j.microrel.2013.07.020_b0030","doi-asserted-by":"crossref","unstructured":"J. Graffeuil, R. Plana, in: 24th European Microwave Conference, 1994, pp. 62\u201375.","DOI":"10.1109\/EUMA.1994.337198"},{"issue":"11","key":"10.1016\/j.microrel.2013.07.020_b0035","doi-asserted-by":"crossref","first-page":"2176","DOI":"10.1109\/16.333839","volume":"41","author":"Vandamme","year":"1994","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2013.07.020_b0040","doi-asserted-by":"crossref","first-page":"33","DOI":"10.1016\/j.spmi.2003.12.002","volume":"34","author":"Mitrofanov","year":"2003","journal-title":"Superlattices Microstruct."},{"key":"10.1016\/j.microrel.2013.07.020_b0045","unstructured":"S. Karboyan, J.G. Tartarin, N. Labat, B. Lambert, in: 22th International Conference on Noise and Fluctuations, 2013."},{"issue":"10","key":"10.1016\/j.microrel.2013.07.020_b0050","doi-asserted-by":"crossref","first-page":"2377","DOI":"10.1109\/16.158812","volume":"39","author":"Vandamme","year":"1992","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2013.07.020_b0055","doi-asserted-by":"crossref","first-page":"1071","DOI":"10.1109\/16.3366","volume":"35","author":"Vandamme","year":"1988","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2013.07.020_b0060","doi-asserted-by":"crossref","first-page":"560","DOI":"10.1109\/16.906451","volume":"48","author":"Vetury","year":"2001","journal-title":"IEEE Trans. Electron Dev."},{"issue":"9-10","key":"10.1016\/j.microrel.2013.07.020_b0065","doi-asserted-by":"crossref","first-page":"2200","DOI":"10.1016\/j.microrel.2012.06.098","volume":"52","author":"Lambert","year":"2012","journal-title":"Microelectron. Reliab."}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271413001959?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271413001959?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,7,30]],"date-time":"2019-07-30T15:26:19Z","timestamp":1564500379000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271413001959"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,9]]},"references-count":13,"journal-issue":{"issue":"9-11","published-print":{"date-parts":[[2013,9]]}},"alternative-id":["S0026271413001959"],"URL":"https:\/\/doi.org\/10.1016\/j.microrel.2013.07.020","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2013,9]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Influence of gate leakage current on AlGaN\/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Reliability","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.microrel.2013.07.020","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2013 Elsevier Ltd. All rights reserved.","name":"copyright","label":"Copyright"}]}}