{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,7,5]],"date-time":"2024-07-05T13:07:45Z","timestamp":1720184865926},"reference-count":6,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2016,9,1]],"date-time":"2016-09-01T00:00:00Z","timestamp":1472688000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"funder":[{"DOI":"10.13039\/501100004100","name":"LABEX","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100004100","id-type":"DOI","asserted-by":"publisher"}]},{"name":"CNRS"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2016,9]]},"DOI":"10.1016\/j.microrel.2016.07.026","type":"journal-article","created":{"date-parts":[[2016,9,18]],"date-time":"2016-09-18T18:01:09Z","timestamp":1474221669000},"page":"594-598","update-policy":"http:\/\/dx.doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["Reliability assessment of ultra-short gate length AlGaN\/GaN HEMTs on Si substrate by on-state step stress"],"prefix":"10.1016","volume":"64","author":[{"given":"H.","family":"Lakhdhar","sequence":"first","affiliation":[]},{"given":"N.","family":"Labat","sequence":"additional","affiliation":[]},{"given":"A.","family":"Curutchet","sequence":"additional","affiliation":[]},{"given":"N.","family":"Defrance","sequence":"additional","affiliation":[]},{"given":"M.","family":"Lesecq","sequence":"additional","affiliation":[]},{"given":"J.-C.","family":"De Jaeger","sequence":"additional","affiliation":[]},{"given":"N.","family":"Malbert","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.microrel.2016.07.026_bb0005","first-page":"151","article-title":"40-W\/mm double field-plated GaN HEMTs","author":"Wu","year":"2006","journal-title":"Device Res. Conf."},{"key":"10.1016\/j.microrel.2016.07.026_bb0010","first-page":"480","article-title":"First reliability demonstration of sub-200-nm AlN\/GaN-on-silicon double Heterostructure HEMTs for Ka-band applications","volume":"13","author":"Meneghesso","year":"2013","journal-title":"TDMR"},{"key":"10.1016\/j.microrel.2016.07.026_bb0015","series-title":"Reliability of GaN HEMTs with 100nm Gate Length under DC-Stress Tests","first-page":"115","author":"Dammann","year":"2014"},{"issue":"7\u20138","key":"10.1016\/j.microrel.2016.07.026_bb0020","doi-asserted-by":"crossref","first-page":"2399","DOI":"10.1002\/pssc.201000916","article-title":"\u201cReliability of T-gate AlGaN\/GaN HEMTs\u201d, Phys","volume":"8","author":"Burnham","year":"2011","journal-title":"Status Solidi C"},{"key":"10.1016\/j.microrel.2016.07.026_bb0025","series-title":"Degradation of GaN High-Electron Mobility Transistors in Voltage Step Stress","first-page":"122","author":"Wang","year":"2012"},{"issue":"4","key":"10.1016\/j.microrel.2016.07.026_bb0030","doi-asserted-by":"crossref","first-page":"1601","DOI":"10.1088\/1674-1056\/18\/4\/052","article-title":"High-electric-field-stress_induced degradation of SiN passivated AlGaN\/GaN high electron mobility transistors","volume":"18","author":"Wen-Ping","year":"2009","journal-title":"Chin. Phys."}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271416301706?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271416301706?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2020,5,17]],"date-time":"2020-05-17T05:38:37Z","timestamp":1589693917000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271416301706"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,9]]},"references-count":6,"alternative-id":["S0026271416301706"],"URL":"https:\/\/doi.org\/10.1016\/j.microrel.2016.07.026","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2016,9]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Reliability assessment of ultra-short gate length AlGaN\/GaN HEMTs on Si substrate by on-state step stress","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Reliability","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.microrel.2016.07.026","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2016 Published by Elsevier Ltd.","name":"copyright","label":"Copyright"}]}}