{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,13]],"date-time":"2025-05-13T20:20:15Z","timestamp":1747167615780,"version":"3.40.5"},"reference-count":31,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2017,4,1]],"date-time":"2017-04-01T00:00:00Z","timestamp":1491004800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2017,4]]},"DOI":"10.1016\/j.microrel.2017.02.017","type":"journal-article","created":{"date-parts":[[2017,3,7]],"date-time":"2017-03-07T09:46:48Z","timestamp":1488880008000},"page":"82-85","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":0,"special_numbering":"C","title":["Energetic deposition, measurement and simulation of graphitic contacts to 6H-SiC"],"prefix":"10.1016","volume":"71","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7084-9593","authenticated-orcid":false,"given":"Hiep","family":"Tran","sequence":"first","affiliation":[]},{"given":"Masturina","family":"Kracica","sequence":"additional","affiliation":[]},{"given":"Dougal","family":"McCulloch","sequence":"additional","affiliation":[]},{"given":"Edwin","family":"Mayes","sequence":"additional","affiliation":[]},{"given":"Anthony","family":"Holland","sequence":"additional","affiliation":[]},{"given":"James","family":"Partridge","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.microrel.2017.02.017_bb0005","doi-asserted-by":"crossref","first-page":"325","DOI":"10.1179\/174328004X5655","article-title":"Carbon nanotubes: synthesis and properties, electronic devices and other emerging applications","volume":"49","author":"Terrones","year":"2004","journal-title":"Int. Mater. Rev."},{"key":"10.1016\/j.microrel.2017.02.017_bb0010","doi-asserted-by":"crossref","first-page":"507","DOI":"10.1088\/0034-4885\/69\/3\/R01","article-title":"Physics of carbon nanotube electronic devices","volume":"69","author":"Anantram","year":"2006","journal-title":"Rep. Prog. Phys."},{"key":"10.1016\/j.microrel.2017.02.017_bb0015","doi-asserted-by":"crossref","first-page":"1141","DOI":"10.1007\/s00339-004-3151-7","article-title":"How do carbon nanotubes fit into the semiconductor roadmap?","volume":"80","author":"Graham","year":"2005","journal-title":"Appl. Phys. A Mater. Sci. Process."},{"key":"10.1016\/j.microrel.2017.02.017_bb0020","doi-asserted-by":"crossref","first-page":"3","DOI":"10.1557\/opl.2011.400","article-title":"Carbon-based materials as key-enabler for more than Moore","volume":"1303","author":"Kreupl","year":"2011","journal-title":"Mater. Res. Soc. Symp. Proc."},{"key":"10.1016\/j.microrel.2017.02.017_bb0025","doi-asserted-by":"crossref","first-page":"163101","DOI":"10.1063\/1.3495777","article-title":"Modified semiconducting graphene in contact with a metal: characterization of the Schottky diode","volume":"97","author":"Nourbakhsh","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.microrel.2017.02.017_bb0030","doi-asserted-by":"crossref","first-page":"1863","DOI":"10.1021\/nl104364c","article-title":"Graphene-silicon Schottky diodes","volume":"11","author":"Chen","year":"2011","journal-title":"Nano Lett."},{"key":"10.1016\/j.microrel.2017.02.017_bb0035","doi-asserted-by":"crossref","first-page":"222103","DOI":"10.1063\/1.3268788","article-title":"Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates","volume":"95","author":"Tongay","year":"2009","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.microrel.2017.02.017_bb0040","doi-asserted-by":"crossref","first-page":"51","DOI":"10.1557\/opl.2015.824","article-title":"Graphitic Schottky contacts to Si formed by energetic deposittion","volume":"1786","author":"Alnassar","year":"2015","journal-title":"Mater. Res. Soc. Symp. Proc."},{"key":"10.1016\/j.microrel.2017.02.017_bb0045","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1016\/S0927-796X(01)00037-7","article-title":"Recent advances in Schottky barrier concepts","volume":"35","author":"Tung","year":"2001","journal-title":"Mater. Sci. Eng. R"},{"year":"1988","series-title":"Metal \u2013 Semiconductor Contacts","author":"Rhoderick","key":"10.1016\/j.microrel.2017.02.017_bb0050"},{"key":"10.1016\/j.microrel.2017.02.017_bb0055","doi-asserted-by":"crossref","first-page":"1633","DOI":"10.1109\/16.536807","article-title":"Wide bandgap semiconductor materials and devices","volume":"43","author":"Yolder","year":"1996","journal-title":"IEEE Trans. Electron. Devices"},{"key":"10.1016\/j.microrel.2017.02.017_bb0060","article-title":"Reliability of SiC power devices and its influence on their commercialization-review, status, and remaining issues","volume":"156-161","author":"Treu","year":"2010","journal-title":"IEEE Int. Reliab. Phys. Symp. Proc."},{"key":"10.1016\/j.microrel.2017.02.017_bb0065","doi-asserted-by":"crossref","first-page":"581","DOI":"10.1002\/1521-3951(199707)202:1<581::AID-PSSB581>3.0.CO;2-M","article-title":"The physics of ohmic contacts to SiC","volume":"202","author":"Crofton","year":"1997","journal-title":"Phys. Status Solidi B"},{"key":"10.1016\/j.microrel.2017.02.017_bb0070","doi-asserted-by":"crossref","first-page":"83","DOI":"10.1016\/0921-5107(95)01276-1","article-title":"A critical review of ohmic and rectifying contacts for silicon carbide","volume":"34","author":"Porter","year":"1995","journal-title":"Mater. Sci. Eng. B"},{"key":"10.1016\/j.microrel.2017.02.017_bb0075","unstructured":"Sentaurus TCAD J-2014, Synopsys, Inc., 2014"},{"key":"10.1016\/j.microrel.2017.02.017_bb0080","doi-asserted-by":"crossref","first-page":"141","DOI":"10.1016\/j.carbon.2016.02.038","article-title":"Rectifying electrical contacts to n-type 6H\u2013SiC formed from energetically deposited carbon","volume":"102","author":"Kracica","year":"2016","journal-title":"Carbon"},{"key":"10.1016\/j.microrel.2017.02.017_bb0085","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1016\/S0040-6090(99)00095-4","article-title":"Transport of vacuum arc plasma through an off-plane double bend filtering duct","volume":"345","author":"Shi","year":"1999","journal-title":"Thin Solid Films"},{"key":"10.1016\/j.microrel.2017.02.017_bb0090","doi-asserted-by":"crossref","first-page":"045101","DOI":"10.1103\/PhysRevB.65.045101","article-title":"sp2\/sp3 hybridization ratio in amorphous carbon from C 1s core-level shifts: X-ray photoelectron spectroscopy and first-principles calculation","volume":"65","author":"Haerle","year":"2001","journal-title":"Phys. Rev. B"},{"key":"10.1016\/j.microrel.2017.02.017_bb0095","unstructured":"Sentaurus Devices User guide, ver. J-2014.09, Sep. 2014"},{"key":"10.1016\/j.microrel.2017.02.017_bb0100","doi-asserted-by":"crossref","first-page":"873","DOI":"10.1016\/S0026-2692(00)00083-5","article-title":"Mixed mode device simulation","volume":"31","author":"Grasser","year":"2000","journal-title":"Microelectron. J."},{"key":"10.1016\/j.microrel.2017.02.017_bb0105","doi-asserted-by":"crossref","first-page":"223","DOI":"10.1109\/SMICND.2015.7355214","article-title":"On the models used for TCAD simulations of Diamond Schottky Barrier Diodes","author":"Donato","year":"2015","journal-title":"Int. Semicond. Conf. (CAS)"},{"key":"10.1016\/j.microrel.2017.02.017_bb0110","doi-asserted-by":"crossref","first-page":"S1","DOI":"10.1088\/0268-1242\/18\/3\/301","article-title":"Electronic properties of CVD diamond","volume":"18","author":"Nebel","year":"2003","journal-title":"Semicond. Sci. Technol."},{"key":"10.1016\/j.microrel.2017.02.017_bb0115","doi-asserted-by":"crossref","first-page":"1659","DOI":"10.1016\/S0925-9635(99)00087-4","article-title":"Diamond-like carbon \u2013 present status","volume":"8","author":"Lifshitz","year":"1999","journal-title":"Diam. Relat. Mater."},{"key":"10.1016\/j.microrel.2017.02.017_bb0120","doi-asserted-by":"crossref","first-page":"34","DOI":"10.1016\/S1359-0286(99)80008-4","article-title":"Tetrahedral carbons","volume":"4","author":"Zellama","year":"1999","journal-title":"Curr. Opin. Solid State Mater. Sci."},{"key":"10.1016\/j.microrel.2017.02.017_bb0125","doi-asserted-by":"crossref","first-page":"696","DOI":"10.1134\/S1063782607060152","article-title":"On the electron affinity of silicon carbide polytypes","volume":"41","author":"Davydov","year":"2007","journal-title":"Semiconductors"},{"key":"10.1016\/j.microrel.2017.02.017_bb0130","doi-asserted-by":"crossref","first-page":"577","DOI":"10.1109\/16.372057","article-title":"Properties of n-type tetrahedral amorphous carbon (ta-C)\/p-type crystalline silicon heterojunction diodes","volume":"42","author":"Veerasamy","year":"1995","journal-title":"IEEE Trans. Electron. Devices"},{"key":"10.1016\/j.microrel.2017.02.017_bb0135","doi-asserted-by":"crossref","first-page":"176101","DOI":"10.1103\/PhysRevLett.100.176101","article-title":"Abrupt stress induced transformation in amorphous carbon films with a highly conductive transition phase","volume":"100","author":"Lau","year":"2008","journal-title":"Phys. Rev. Lett."},{"key":"10.1016\/j.microrel.2017.02.017_bb0140","doi-asserted-by":"crossref","first-page":"26","DOI":"10.1557\/JMR.1995.0026","article-title":"Chemistry, micro-structure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)","volume":"10","author":"Porter","year":"1995","journal-title":"J. Mater. Res."},{"key":"10.1016\/j.microrel.2017.02.017_bb0145","doi-asserted-by":"crossref","first-page":"2024","DOI":"10.1063\/1.1381001","article-title":"Role of sp2 phase in field emission from nanostructured carbons","volume":"90","author":"Ilie","year":"2001","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.microrel.2017.02.017_bb0150","doi-asserted-by":"crossref","first-page":"1573","DOI":"10.1007\/s00339-004-2957-7","article-title":"Influence of sp3 fraction on the field emission properties of tetrahedral amorphous carbon films formed by magnetic filtered plasma stream","volume":"80","author":"Chen","year":"2004","journal-title":"Appl. Phys. A Mater. Sci. Process."},{"key":"10.1016\/j.microrel.2017.02.017_bb0155","doi-asserted-by":"crossref","first-page":"2033","DOI":"10.1016\/j.carbon.2011.01.029","article-title":"Tuning Schottky diodes at the many-layer-graphene\/semiconductor interface by doping","volume":"49","author":"Tongay","year":"2011","journal-title":"Carbon"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271417300422?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271417300422?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2022,7,25]],"date-time":"2022-07-25T11:20:54Z","timestamp":1658748054000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271417300422"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,4]]},"references-count":31,"alternative-id":["S0026271417300422"],"URL":"https:\/\/doi.org\/10.1016\/j.microrel.2017.02.017","relation":{},"ISSN":["0026-2714"],"issn-type":[{"type":"print","value":"0026-2714"}],"subject":[],"published":{"date-parts":[[2017,4]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Energetic deposition, measurement and simulation of graphitic contacts to 6H-SiC","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Reliability","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.microrel.2017.02.017","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2017 Elsevier Ltd. All rights reserved.","name":"copyright","label":"Copyright"}]}}