{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,9]],"date-time":"2026-01-09T16:34:19Z","timestamp":1767976459090,"version":"3.49.0"},"reference-count":17,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2017,4,1]],"date-time":"2017-04-01T00:00:00Z","timestamp":1491004800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["51472277"],"award-info":[{"award-number":["51472277"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["11304092"],"award-info":[{"award-number":["11304092"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["51171061"],"award-info":[{"award-number":["51171061"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"International Science & Technology Cooperation Program of China","doi-asserted-by":"publisher","award":["2016YFE0124300"],"award-info":[{"award-number":["2016YFE0124300"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2017,4]]},"DOI":"10.1016\/j.microrel.2017.03.002","type":"journal-article","created":{"date-parts":[[2017,3,18]],"date-time":"2017-03-18T02:16:38Z","timestamp":1489803398000},"page":"106-110","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":18,"special_numbering":"C","title":["High-current stressing of organic light-emitting diodes with different electron-transport materials"],"prefix":"10.1016","volume":"71","author":[{"given":"L.","family":"Liu","sequence":"first","affiliation":[]},{"given":"S.","family":"Li","sequence":"additional","affiliation":[]},{"given":"Y.M.","family":"Zhou","sequence":"additional","affiliation":[]},{"given":"L.Y.","family":"Liu","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3234-9632","authenticated-orcid":false,"given":"X.A.","family":"Cao","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.microrel.2017.03.002_bb0005","doi-asserted-by":"crossref","first-page":"2696","DOI":"10.1016\/j.rser.2012.02.021","article-title":"Organic light emitting diodes: energy saving lighting technology\u2014a review","volume":"16","author":"Kalyani","year":"2012","journal-title":"Renew. Sust. Energ. Rev."},{"key":"10.1016\/j.microrel.2017.03.002_bb0010","unstructured":"Solid-State Lighting R&D Plan. http:\/\/energy.gov\/sites\/prod\/files\/2016\/06\/f32\/ssl_rd-plan_%20jun2016_2.pdf. US Department of Energy; June 2016."},{"key":"10.1016\/j.microrel.2017.03.002_bb0015","doi-asserted-by":"crossref","first-page":"4522","DOI":"10.1021\/cm040081o","article-title":"Degradation phenomena in small-molecule organic light-emitting devices","volume":"16","author":"Aziz","year":"2004","journal-title":"Chem. Mater."},{"key":"10.1016\/j.microrel.2017.03.002_bb0020","first-page":"253","article-title":"OLED device operational lifetime: insights and challenges","author":"Xia","year":"2007","journal-title":"Proc. IEEE 45th Annual Int. Reliability Phys. Symp."},{"key":"10.1016\/j.microrel.2017.03.002_bb0025","doi-asserted-by":"crossref","first-page":"1404","DOI":"10.1063\/1.124708","article-title":"Metal diffusion from electrodes in organic light-emitting diodes","volume":"75","author":"Lee","year":"1999","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.microrel.2017.03.002_bb0030","first-page":"111","article-title":"Degradation mechanisms in organic light emitting diodes","volume":"233","author":"Shen","year":"2000","journal-title":"Synth. Met."},{"key":"10.1016\/j.microrel.2017.03.002_bb0035","doi-asserted-by":"crossref","first-page":"1108","DOI":"10.1063\/1.1531231","article-title":"Nonradiative recombination centers and electrical aging of organic light-emitting diodes: direct connection between accumulation of trapped charge and luminance loss","volume":"93","author":"Kondakov","year":"2003","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.microrel.2017.03.002_bb0040","doi-asserted-by":"crossref","first-page":"2679","DOI":"10.1063\/1.113123","article-title":"Molecular design of hole transport materials for obtaining high durability in organic electroluminescent diodes","volume":"66","author":"Adachi","year":"1995","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.microrel.2017.03.002_bb0045","doi-asserted-by":"crossref","first-page":"172","DOI":"10.1063\/1.124309","article-title":"Organic light-emitting diodes with a bipolar transport layer","volume":"75","author":"Choong","year":"1999","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.microrel.2017.03.002_bb0050","doi-asserted-by":"crossref","first-page":"024512","DOI":"10.1063\/1.2430922","article-title":"Operational degradation of organic light-emitting diodes: mechanism and identification of chemical products","volume":"101","author":"Kondakov","year":"2007","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.microrel.2017.03.002_bb0055","doi-asserted-by":"crossref","first-page":"124514","DOI":"10.1063\/1.3151689","article-title":"Direct evidence for degradation of polaron excited states in organic light emitting diodes","volume":"105","author":"Giebink","year":"2009","journal-title":"J. Appl. Phys."},{"key":"10.1016\/j.microrel.2017.03.002_bb0060","doi-asserted-by":"crossref","first-page":"2523","DOI":"10.1016\/j.orgel.2013.06.025","article-title":"Degradation of phosphorescent organic light-emitting diodes under pulsed current stressing","volume":"14","author":"Li","year":"2013","journal-title":"Org. Electron."},{"key":"10.1016\/j.microrel.2017.03.002_bb0065","doi-asserted-by":"crossref","first-page":"1866","DOI":"10.1016\/j.microrel.2010.07.114","article-title":"Thermal and electrical stress effects of electrical and optical characteristics of Alq3\/NPD OLED","volume":"50","author":"Brand","year":"2010","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/j.microrel.2017.03.002_bb0070","doi-asserted-by":"crossref","first-page":"2763","DOI":"10.1063\/1.122583","article-title":"Electronic structure of 8-hydroxyquinoline aluminum\/LiF\/Al interface for organic electroluminescent device studied by ultraviolet photoelectron spectroscopy","volume":"73","author":"Mori","year":"1998","journal-title":"Appl. Phys. Lett."},{"key":"10.1016\/j.microrel.2017.03.002_bb0075","doi-asserted-by":"crossref","first-page":"R19","DOI":"10.1149\/2.011404ssl","article-title":"Effect of electron mobility of the electron transport layer on fluorescent organic light-emitting diodes","volume":"3","author":"Rhee","year":"2014","journal-title":"ECS Solid State Lett."},{"key":"10.1016\/j.microrel.2017.03.002_bb0080","doi-asserted-by":"crossref","first-page":"J8","DOI":"10.1149\/1.3007239","article-title":"Rubidium-carbonate-doped 4, 7-diphenyl-1, 10-phenanthroline electron transporting layer for high-efficiency pin organic light emitting diodes","volume":"12","author":"Leem","year":"2009","journal-title":"Electrochem. Solid-State Lett."},{"key":"10.1016\/j.microrel.2017.03.002_bb0085","doi-asserted-by":"crossref","first-page":"847","DOI":"10.1109\/LED.2015.2451106","article-title":"Investigation of joule-heating at heterointerfaces in phosphorescent organic light-emitting diodes","volume":"36","author":"Cao","year":"2015","journal-title":"IEEE Electron Device Lett."}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S002627141730046X?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S002627141730046X?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2018,9,3]],"date-time":"2018-09-03T08:21:13Z","timestamp":1535962873000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S002627141730046X"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,4]]},"references-count":17,"alternative-id":["S002627141730046X"],"URL":"https:\/\/doi.org\/10.1016\/j.microrel.2017.03.002","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2017,4]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"High-current stressing of organic light-emitting diodes with different electron-transport materials","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Reliability","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.microrel.2017.03.002","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2017 Elsevier Ltd. All rights reserved.","name":"copyright","label":"Copyright"}]}}