{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,4]],"date-time":"2026-03-04T17:19:48Z","timestamp":1772644788653,"version":"3.50.1"},"reference-count":61,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2018,2,1]],"date-time":"2018-02-01T00:00:00Z","timestamp":1517443200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Reliability"],"published-print":{"date-parts":[[2018,2]]},"DOI":"10.1016\/j.microrel.2017.12.035","type":"journal-article","created":{"date-parts":[[2018,1,5]],"date-time":"2018-01-05T04:50:11Z","timestamp":1515127811000},"page":"244-251","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":89,"special_numbering":"C","title":["Controversial issues in negative bias temperature instability"],"prefix":"10.1016","volume":"81","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8340-2475","authenticated-orcid":false,"given":"James H.","family":"Stathis","sequence":"first","affiliation":[]},{"given":"Souvik","family":"Mahapatra","sequence":"additional","affiliation":[]},{"given":"Tibor","family":"Grasser","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"key":"10.1016\/j.microrel.2017.12.035_bb0005","doi-asserted-by":"crossref","first-page":"270","DOI":"10.1016\/j.microrel.2005.08.001","article-title":"The negative bias temperature instability in MOS devices: a review","volume":"46","author":"Stathis","year":"2006","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/j.microrel.2017.12.035_bb0010","doi-asserted-by":"crossref","first-page":"841","DOI":"10.1016\/j.microrel.2006.10.006","article-title":"Negative bias temperature instability: what do we understand?","volume":"47","author":"Schroeder","year":"2007","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/j.microrel.2017.12.035_bb0020","doi-asserted-by":"crossref","first-page":"946","DOI":"10.1109\/TED.2016.2519455","article-title":"A modeling framework for NBTI degradation under dynamic voltage and frequency scaling","volume":"63","author":"Parihar","year":"2016","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2017.12.035_bb0025","doi-asserted-by":"crossref","first-page":"3652","DOI":"10.1109\/TED.2011.2164543","article-title":"The paradigm shift in understanding the bias temperature instability: from reaction-diffusion to switching oxide traps","volume":"58","author":"Grasser","year":"2011","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2017.12.035_bb0030","doi-asserted-by":"crossref","first-page":"39","DOI":"10.1016\/j.microrel.2011.09.002","article-title":"Stochastic charge trapping in oxides: from random telegraph noise to bias temperature instabilities","volume":"52","author":"Grasser","year":"2012","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/j.microrel.2017.12.035_bb0035","series-title":"Int. Electron Dev. Meeting","first-page":"535","article-title":"Gate-sided hydrogen release as the origin of \"permanent\" NBTI degradation: from single defects to lifetimes","author":"Grasser","year":"2015"},{"key":"10.1016\/j.microrel.2017.12.035_bb0040","series-title":"Int. Reliability Phys. Symp.","article-title":"The \"permanent\" component of NBTI revisited: saturation, degradation-reversal, and annealing","author":"Grasser","year":"2016"},{"key":"10.1016\/j.microrel.2017.12.035_bb0045","series-title":"Int. Reliability Phys. Symp.","article-title":"Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress","author":"Grasser","year":"2017"},{"key":"10.1016\/j.microrel.2017.12.035_bb0050","series-title":"Int. Reliability Phys. Symp.","first-page":"(XT-1.1","article-title":"Resolution of disputes concerning the physical mechanism and DC\/AC stress\/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs","author":"Parihar","year":"2017"},{"key":"10.1016\/j.microrel.2017.12.035_bb0055","series-title":"IEEE Trans. Electron Dev.","first-page":"3586","article-title":"NBTI in nanoscale MOSFETs-the ultimate modeling benchmark","volume":"61","author":"Grasser","year":"2014"},{"key":"10.1016\/j.microrel.2017.12.035_bb0060","doi-asserted-by":"crossref","first-page":"901","DOI":"10.1109\/TED.2013.2238237","article-title":"A comparative study of different physics-based NBTI models","volume":"60","author":"Mahapatra","year":"2013","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2017.12.035_bb0065","series-title":"Int. Reliability Phys. Symp.","article-title":"On the volatility of oxide defects: activation, deactivation, and transformation","author":"Grasser","year":"2015"},{"key":"10.1016\/j.microrel.2017.12.035_bb0070","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1016\/j.microrel.2005.02.001","article-title":"NBTI degradation: from physical mechanisms to modelling","volume":"46","author":"Huard","year":"2006","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/j.microrel.2017.12.035_bb0075","series-title":"Int. Electron Dev. Meeting","first-page":"618","article-title":"Analytic modeling of the bias temperature instability using capture\/emission time maps","author":"Grasser","year":"2011"},{"key":"10.1016\/j.microrel.2017.12.035_bb0080","series-title":"Int. Reliability Phys. Symp.","first-page":"605","article-title":"The 'permanent' component of NBTI: composition and annealing","author":"Grasser","year":"2011"},{"key":"10.1016\/j.microrel.2017.12.035_bb0085","series-title":"Int. Reliability Phys. Symp.","first-page":"1033","article-title":"Do NBTI-induced Interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique","author":"Hehenberger","year":"2009"},{"key":"10.1016\/j.microrel.2017.12.035_bb0090","doi-asserted-by":"crossref","first-page":"1490","DOI":"10.1109\/TED.2011.2122263","article-title":"A single pulse charge pumping technique for fast measurements of interface states","volume":"68","author":"Lin","year":"2011","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2017.12.035_bb0095","series-title":"Int. Reliability Phys. Symp.","first-page":"381","article-title":"Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification","author":"Kaczer","year":"2005"},{"key":"10.1016\/j.microrel.2017.12.035_bb0100","series-title":"Int. Reliability Phys. Symp.","first-page":"20","article-title":"Ubiquitous relaxation in BTI stressing-new evaluation and insights","author":"Kaczer","year":"2008"},{"key":"10.1016\/j.microrel.2017.12.035_bb0105","series-title":"Int. Electron Dev. Meeting","first-page":"109","article-title":"On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's","author":"Denais","year":"2004"},{"key":"10.1016\/j.microrel.2017.12.035_bb0110","doi-asserted-by":"crossref","first-page":"119","DOI":"10.1109\/TDMR.2007.898229","article-title":"A comparison of very fast to very slow components in degradation and recovery due to NBTI and bulk hole trapping to existing physical models","volume":"7","author":"Reisinger","year":"2007","journal-title":"IEEE Trans. Device Mater. Reliab."},{"key":"10.1016\/j.microrel.2017.12.035_bb0115","series-title":"Int. Electron Dev. Meeting","first-page":"805","article-title":"Theory and practice of on-the-fly and ultra-fast VT measurements for NBTI degradation: challenges and opportunities","author":"Islam","year":"2007"},{"key":"10.1016\/j.microrel.2017.12.035_bb0120","doi-asserted-by":"crossref","first-page":"526","DOI":"10.1109\/TDMR.2008.2002353","article-title":"A rigorous study of measurement techniques for negative bias temperature instability","volume":"8","author":"Grasser","year":"2008","journal-title":"IEEE Trans. Device Mater. Reliab."},{"key":"10.1016\/j.microrel.2017.12.035_bb0125","series-title":"Int. Reliability Phys. Symp.","first-page":"16","article-title":"The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability","author":"Grasser","year":"2010"},{"key":"10.1016\/j.microrel.2017.12.035_bb0130","doi-asserted-by":"crossref","first-page":"245318-1","DOI":"10.1103\/PhysRevB.82.245318","article-title":"Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors","volume":"82","author":"Grasser","year":"2010","journal-title":"Phys. Rev. B"},{"key":"10.1016\/j.microrel.2017.12.035_bb0135","doi-asserted-by":"crossref","first-page":"540","DOI":"10.1109\/TDMR.2007.911379","article-title":"Atomic-scale defects involved in the negative-bias temperature instability","volume":"7","author":"Campbell","year":"2007","journal-title":"IEEE Trans. Device Mater. Reliab."},{"key":"10.1016\/j.microrel.2017.12.035_bb0140","series-title":"Int. Reliability Phys. Symp.","first-page":"33","article-title":"A two-stage model for negative bias temperature instability","author":"Grasser","year":"2009"},{"key":"10.1016\/j.microrel.2017.12.035_bb0145","doi-asserted-by":"crossref","first-page":"3","DOI":"10.1016\/0167-9317(95)00004-R","article-title":"Atomic hydrogen-induced degradation of the Si\/SiO2 structure","volume":"28","author":"Cartier","year":"1995","journal-title":"Microelectron. Eng."},{"key":"10.1016\/j.microrel.2017.12.035_bb0150","series-title":"Int. Reliability Phys. Symp.","article-title":"Universality of NBTI-From devices to circuits and products","author":"Mahapatra","year":"2014"},{"key":"10.1016\/j.microrel.2017.12.035_bb0155","unstructured":"According to SRH statistics, which is the established theory for the occupancy of these states, defect states close to the valence band will adapt their occupancy in the micro- or millisecond range, much faster than the states typically monitored in TDDS."},{"key":"10.1016\/j.microrel.2017.12.035_bb0160","unstructured":"A simple derivation attributed to Alam for a 1\/4 exponent was reprised in [1] for the assumption that diffusion of atomic H is rate-limiting. The 1\/6 exponent follows from the same derivation but assuming diffusion of H2 and using [H2]=k[H]2."},{"key":"10.1016\/j.microrel.2017.12.035_bb0165","series-title":"Int. Reliability Phys. Symp.","first-page":"(XT.5.1","article-title":"Investigation of stochastic implementation of reaction diffusion (RD) models for NBTI related interface trap generation","author":"Naphade","year":"2013"},{"key":"10.1016\/j.microrel.2017.12.035_bb0170","series-title":"Int. Reliability Phys. Symp.","first-page":"614","article-title":"A critical re-evaluation of the usefulness of RD framework in predicting NBTI stress and recovery","author":"Mahapatra","year":"2011"},{"key":"10.1016\/j.microrel.2017.12.035_bb0175","article-title":"BTI analysis tool \u2013 modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact, and EOL estimation","author":"Parihar","year":"2017","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2017.12.035_bb0180","doi-asserted-by":"crossref","first-page":"903","DOI":"10.1016\/j.microrel.2006.10.011","article-title":"Hydrogen in MOSFETs\u2013A primary agent of reliability issues","volume":"47","author":"Pantelides","year":"2007","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/j.microrel.2017.12.035_bb0185","doi-asserted-by":"crossref","first-page":"3444","DOI":"10.1103\/PhysRevB.42.3444","article-title":"Dissociation kinetics of hydrogen-passivated (111) Si-SiO2 interface defects","volume":"42","author":"Brower","year":"1990","journal-title":"Phys. Rev. B"},{"key":"10.1016\/j.microrel.2017.12.035_bb0190","unstructured":"For example, assuming strong inversion with a hole concentration of 1020 cm\u22123, the probability of finding a hole 4eV below the silicon valence band would be ~10\u221250."},{"key":"10.1016\/j.microrel.2017.12.035_bb0195","series-title":"Int. Electron Dev. Meeting","first-page":"409","article-title":"Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI","author":"Grasser","year":"2013"},{"key":"10.1016\/j.microrel.2017.12.035_bb0200","doi-asserted-by":"crossref","first-page":"2745","DOI":"10.1103\/PhysRevLett.72.2745","article-title":"Atomic hydrogen reactions with Pb centers at the (100) Si\/SiO2 interface","volume":"72","author":"Stathis","year":"1994","journal-title":"Phys. Rev. Lett."},{"key":"10.1016\/j.microrel.2017.12.035_bb0205","doi-asserted-by":"crossref","first-page":"2143","DOI":"10.1109\/TED.2007.902883","article-title":"Recent issues in negative-bias temperature instability: initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation","volume":"54","author":"Islam","year":"2007","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2017.12.035_bb0210","series-title":"Int. Electron Dev. Meeting","article-title":"Modeling of NBTI time kinetics and T dependence of VAF in SiGe P-FinFETs","author":"Parihar","year":"2017"},{"key":"10.1016\/j.microrel.2017.12.035_bb0215","series-title":"Int. Reliability Phys. Symp.","article-title":"Prediction of NBTI stress and recovery time kinetics in Si Capped SiGe p-MOSFETs","author":"Parihar","year":"2018"},{"key":"10.1016\/j.microrel.2017.12.035_bb0220","series-title":"Int. Reliability Phys. Symp","article-title":"Key parameters driving transistor degradation in advanced strained SIGE channels, to be published","author":"Huard","year":"2018"},{"key":"10.1016\/j.microrel.2017.12.035_bb0225","series-title":"Int. Electron Dev. Meeting","article-title":"Material dependence of hydrogen diffusion: implications for NBTI degradation","author":"Krishnan","year":"2005"},{"key":"10.1016\/j.microrel.2017.12.035_bb0230","doi-asserted-by":"crossref","first-page":"2508","DOI":"10.1149\/1.2044326","article-title":"Paramagnetic point defects in amorphous thin films of SiO2 and Si3N4: updates and additions","author":"Poindexter","year":"1995","journal-title":"J. Electrochem. Soc."},{"key":"10.1016\/j.microrel.2017.12.035_bb0235","series-title":"Int. Electron Dev. Meeting","first-page":"470","article-title":"On the microscopic origin of the frequency dependence of hole trapping in pMOSFETs","author":"Grasser","year":"2012"},{"key":"10.1016\/j.microrel.2017.12.035_bb0240","series-title":"Int. Electron Dev. Meeting","first-page":"530","article-title":"On the microscopic structure of hole traps in pMOSFETs","author":"Grasser","year":"2014"},{"key":"10.1016\/j.microrel.2017.12.035_bb0245","series-title":"Int. Symp. on VLSI Technology","article-title":"On the microscopic structure of hole traps in pMOSFETs","author":"Rzepa","year":"2016"},{"key":"10.1016\/j.microrel.2017.12.035_bb0250","series-title":"Int. Reliability Phys. Symp.","article-title":"Analog-circuit NBTI degradation and time-dependent NBTI variability: an efficient physics-based compact model","author":"Giering","year":"2016"},{"key":"10.1016\/j.microrel.2017.12.035_bb0255","doi-asserted-by":"crossref","DOI":"10.1016\/j.microrel.2018.04.002","article-title":"Comphy - a compact-physics framework for unified modeling of BTI","author":"Rzepa","year":"2018","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/j.microrel.2017.12.035_bb0260","series-title":"Int. Reliability Phys. Symp.","article-title":"The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-Stress","author":"Reisinger","year":"2010"},{"key":"10.1016\/j.microrel.2017.12.035_bb0265","series-title":"Bias Temperature Instability for Devices and Circuits","first-page":"447","author":"Grasser","year":"2014"},{"key":"10.1016\/j.microrel.2017.12.035_bb0270","series-title":"Int. Reliability Phys. Symp.","first-page":"28","article-title":"An energy-level perspective of bias temperature instability","author":"Grasser","year":"2008"},{"key":"10.1016\/j.microrel.2017.12.035_bb0275","series-title":"Int. Reliability Phys. Symp.","first-page":"(XT8.1","article-title":"On the frequency dependence of the bias temperature instability","author":"Grasser","year":"2012"},{"key":"10.1016\/j.microrel.2017.12.035_bb0280","doi-asserted-by":"crossref","first-page":"2092","DOI":"10.1109\/TED.2017.2686086","article-title":"Superior NBTI in high-k SiGe transistors - part I: experimental","volume":"64","author":"Waltl","year":"2017","journal-title":"IEEE Trans. Electron Dev."},{"key":"10.1016\/j.microrel.2017.12.035_bb0285","series-title":"Int. Reliability Phys. Symp.","article-title":"Understanding and modeling AC BTI","author":"Reisinger","year":"2011"},{"key":"10.1016\/j.microrel.2017.12.035_bb0290","doi-asserted-by":"crossref","first-page":"109","DOI":"10.1016\/j.microrel.2017.11.026","article-title":"As-grown-generation (AG) model of NBTI: a shift from fitting test data to prediction","volume":"80","author":"Zhang","year":"2018","journal-title":"Microelectron. Reliab."},{"key":"10.1016\/j.microrel.2017.12.035_bb0295","series-title":"Int. Reliability Phys. Symp.","first-page":"655","article-title":"Managing SRAM reliability from bitcell to library level","author":"Huard","year":"2010"},{"key":"10.1016\/j.microrel.2017.12.035_bb0300","series-title":"Int. Reliability Phys. Symp.","article-title":"Analog-circuit NBTI degradation and time-dependent NBTI variability: an efficient physics-based compact model","author":"Giering","year":"2016"},{"key":"10.1016\/j.microrel.2017.12.035_bb0305","series-title":"Int. Electron Dev. Meeting","first-page":"778","article-title":"Predictive as-grown-generation (AG) model for BTI-induced device\/circuit level variations in nanoscale technology nodes","author":"Gao","year":"2016"},{"key":"10.1016\/j.microrel.2017.12.035_bb0310","series-title":"Int. Reliability Phys. Symp.","article-title":"Predictive TCAD for NBTI stress-recovery in various device architectures and channel materials","author":"Mishra","year":"2017"}],"container-title":["Microelectronics Reliability"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271417305991?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026271417305991?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2019,1,10]],"date-time":"2019-01-10T16:46:46Z","timestamp":1547138806000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026271417305991"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,2]]},"references-count":61,"alternative-id":["S0026271417305991"],"URL":"https:\/\/doi.org\/10.1016\/j.microrel.2017.12.035","relation":{},"ISSN":["0026-2714"],"issn-type":[{"value":"0026-2714","type":"print"}],"subject":[],"published":{"date-parts":[[2018,2]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Controversial issues in negative bias temperature instability","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Reliability","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.microrel.2017.12.035","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2017 Elsevier Ltd. All rights reserved.","name":"copyright","label":"Copyright"}]}}