{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,18]],"date-time":"2026-06-18T19:28:56Z","timestamp":1781810936930,"version":"3.54.5"},"reference-count":14,"publisher":"Elsevier BV","license":[{"start":{"date-parts":[[2025,12,1]],"date-time":"2025-12-01T00:00:00Z","timestamp":1764547200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2025,12,1]],"date-time":"2025-12-01T00:00:00Z","timestamp":1764547200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2025,11,18]],"date-time":"2025-11-18T00:00:00Z","timestamp":1763424000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/100010132","name":"\u00d6sterreichische Nationalstiftung f\u00fcr Forschung, Technologie und Entwicklung","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100010132","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100006012","name":"Christian Doppler Research Association","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100006012","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012650","name":"TU Wien Library","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100012650","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100031306","name":"Bundesministerium f\u00fcr Arbeit und Wirtschaft","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100031306","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["SoftwareX"],"published-print":{"date-parts":[[2025,12]]},"DOI":"10.1016\/j.softx.2025.102453","type":"journal-article","created":{"date-parts":[[2025,11,28]],"date-time":"2025-11-28T10:36:54Z","timestamp":1764326214000},"page":"102453","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":1,"special_numbering":"C","title":["ViennaPS: A flexible framework for semiconductor process simulation"],"prefix":"10.1016","volume":"32","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-5638-9129","authenticated-orcid":false,"given":"T.","family":"Reiter","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"L.","family":"Filipovic","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"78","reference":[{"issue":"3","key":"10.1016\/j.softx.2025.102453_bib0005","first-page":"031209","article-title":"Review of virtual wafer process modeling and metrology for advanced technology development","volume":"22","author":"Hargrove","year":"2023","journal-title":"J Micro\/Nanopatterning Mater Metrol"},{"key":"10.1016\/j.softx.2025.102453_bib0010","series-title":"Semiconductor Engineering","article-title":"What is TCAD and why it is essential for the semiconductor industry","author":"Aboud","year":"2023"},{"issue":"11","key":"10.1016\/j.softx.2025.102453_bib0015","doi-asserted-by":"crossref","first-page":"8124","DOI":"10.1021\/acsaelm.4c01462","article-title":"Loading effect during sige\/si stack selective isotropic etching for gate-all-around transistors","volume":"6","author":"Shao","year":"2024","journal-title":"ACS Appl Electron Mater"},{"issue":"3","key":"10.1016\/j.softx.2025.102453_bib0020","doi-asserted-by":"crossref","first-page":"665","DOI":"10.3390\/mi14030665","article-title":"Effect of mask geometry variation on plasma etching profiles","volume":"14","author":"Bobinac","year":"2023","journal-title":"Micromachines"},{"key":"10.1016\/j.softx.2025.102453_bib0025","doi-asserted-by":"crossref","first-page":"108261","DOI":"10.1016\/j.sse.2022.108261","article-title":"Impact of plasma induced damage on the fabrication of 3d NAND flash memory","volume":"192","author":"Reiter","year":"2022","journal-title":"Solid State Electron"},{"key":"10.1016\/j.softx.2025.102453_bib0045","series-title":"Physics-informed deep learning for plasma etch optimization","author":"Dighamber","year":"2024"},{"key":"10.1016\/j.softx.2025.102453_bib0050","series-title":"software","article-title":"The visualization toolkit (VTK). Version 9.0.0","author":"Schroeder","year":"2024"},{"issue":"4","key":"10.1016\/j.softx.2025.102453_bib0055","doi-asserted-by":"crossref","first-page":"143","DOI":"10.1145\/2601097.2601199","article-title":"Embree: a kernel framework for efficient CPU ray tracing","volume":"33","author":"Wald","year":"2014","journal-title":"ACM Trans Graph"},{"issue":"4","key":"10.1016\/j.softx.2025.102453_bib0060","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1145\/1778765.1778803","article-title":"Optix: a general purpose ray tracing engine","volume":"29","author":"Parker","year":"2010","journal-title":"ACM Trans Graph"},{"key":"10.1016\/j.softx.2025.102453_bib0065","series-title":"Level set methods and dynamic implicit surfaces","author":"Osher","year":"2003"},{"issue":"1","key":"10.1016\/j.softx.2025.102453_bib0070","doi-asserted-by":"crossref","first-page":"151","DOI":"10.1145\/1122501.1122508","article-title":"Hierarchical RLE level set: a compact and versatile deformable surface representation","volume":"25","author":"Houston","year":"2006","journal-title":"ACM Trans Graph"},{"key":"10.1016\/j.softx.2025.102453_bib0075","first-page":"114","article-title":"Geometric advection and its application in the emulation of high aspect ratio structures","volume":"387","author":"Klemenschits","year":"2021","journal-title":"Comput Methods Appl Mech Eng"},{"issue":"5","key":"10.1016\/j.softx.2025.102453_bib0080","doi-asserted-by":"crossref","first-page":"1430","DOI":"10.1116\/1.2013317","article-title":"Feature-scale model of SI etching in SF6\/o2 plasma and comparison with experiments","volume":"23","author":"Belen","year":"2005","journal-title":"J Vac Sci Technol A"},{"key":"10.1016\/j.softx.2025.102453_bib0085","series-title":"Proceedings of the 2022 IEEE International Integrated Reliability Workshop (IIRW)","article-title":"Modeling plasma-induced damage during the dry etching of silicon","author":"Reiter","year":"2022"}],"container-title":["SoftwareX"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S2352711025004194?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S2352711025004194?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2026,3,18]],"date-time":"2026-03-18T19:47:21Z","timestamp":1773863241000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S2352711025004194"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,12]]},"references-count":14,"alternative-id":["S2352711025004194"],"URL":"https:\/\/doi.org\/10.1016\/j.softx.2025.102453","relation":{},"ISSN":["2352-7110"],"issn-type":[{"value":"2352-7110","type":"print"}],"subject":[],"published":{"date-parts":[[2025,12]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"ViennaPS: A flexible framework for semiconductor process simulation","name":"articletitle","label":"Article Title"},{"value":"SoftwareX","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.softx.2025.102453","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"\u00a9 2025 The Authors. Published by Elsevier B.V.","name":"copyright","label":"Copyright"}],"article-number":"102453"}}