{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,23]],"date-time":"2025-09-23T13:59:51Z","timestamp":1758635991974},"reference-count":16,"publisher":"Elsevier BV","issue":"1","license":[{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2003,1]]},"DOI":"10.1016\/s0026-2692(02)00138-6","type":"journal-article","created":{"date-parts":[[2003,1,30]],"date-time":"2003-01-30T17:32:20Z","timestamp":1043947940000},"page":"71-75","update-policy":"http:\/\/dx.doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":13,"title":["Numerical investigation of characteristics of p-channel Ge\/Si hetero-nanocrystal memory"],"prefix":"10.1016","volume":"34","author":[{"given":"H.G.","family":"Yang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Y.","family":"Shi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"L.","family":"Pu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S.L.","family":"Gu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"B.","family":"Shen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"P.","family":"Han","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"R.","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Y.D.","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"78","reference":[{"issue":"March","key":"10.1016\/S0026-2692(02)00138-6_BIB1","first-page":"1377","article-title":"A silicon nanocrystals based memory","volume":"68","author":"Tiwari","year":"1995","journal-title":"Appl. Phys. Lett."},{"issue":"September","key":"10.1016\/S0026-2692(02)00138-6_BIB2","doi-asserted-by":"crossref","first-page":"1628","DOI":"10.1109\/16.310117","article-title":"Room-temperature single-electron memory","volume":"41","author":"Yano","year":"1994","journal-title":"IEEE Trans. Electron. Devices"},{"issue":"August","key":"10.1016\/S0026-2692(02)00138-6_BIB3","doi-asserted-by":"crossref","first-page":"2358","DOI":"10.1063\/1.368346","article-title":"Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals","volume":"84","author":"Shi","year":"1998","journal-title":"J. Appl. Phys."},{"key":"10.1016\/S0026-2692(02)00138-6_BIB4","doi-asserted-by":"crossref","first-page":"657","DOI":"10.1016\/S0026-2692(97)00001-3","article-title":"A scalable single poly EEPROM cell for embedded memory applications","volume":"28","author":"Baldi","year":"1997","journal-title":"Microelectron. J."},{"key":"10.1016\/S0026-2692(02)00138-6_BIB5","doi-asserted-by":"crossref","first-page":"148","DOI":"10.1109\/55.910625","article-title":"3-D computer simulation of single-electron charging in silicon nanocrystal floating gate flash memory devices","volume":"22","author":"Thean","year":"2001","journal-title":"IEEE Electron. Device Lett."},{"key":"10.1016\/S0026-2692(02)00138-6_BIB6","doi-asserted-by":"crossref","first-page":"874","DOI":"10.1109\/16.918234","article-title":"Characteristics of p-channel Si nano-crystal memory","volume":"48","author":"Han","year":"2001","journal-title":"IEEE Trans. Electron. Devices"},{"key":"10.1016\/S0026-2692(02)00138-6_BIB7","first-page":"142","article-title":"Silicon-based nanocrystal memories","author":"Shi","year":"2000","journal-title":"Proc. SODC2000, Nanjing"},{"issue":"May","key":"10.1016\/S0026-2692(02)00138-6_BIB8","doi-asserted-by":"crossref","first-page":"767","DOI":"10.1016\/S0038-1101(01)00033-8","article-title":"Simulation of electron storage in Ge\/Si hetero-nanocrystal memory","volume":"45","author":"Yang","year":"2001","journal-title":"Solid-State Electron."},{"issue":"August","key":"10.1016\/S0026-2692(02)00138-6_BIB9","doi-asserted-by":"crossref","first-page":"415","DOI":"10.1063\/1.96130","article-title":"Resonant tunneling of holes in AlAs\u2013GaAs\u2013AlAs heterostructures","volume":"47","author":"Mendez","year":"1985","journal-title":"Appl. Phys. Lett."},{"issue":"October","key":"10.1016\/S0026-2692(02)00138-6_BIB10","doi-asserted-by":"crossref","first-page":"8365","DOI":"10.1103\/PhysRevB.38.8365","article-title":"Theory of hole resonant tunneling in quantum-well structures","volume":"38","author":"Xia","year":"1988","journal-title":"Phys. Rev. B"},{"issue":"November","key":"10.1016\/S0026-2692(02)00138-6_BIB11","first-page":"2355","article-title":"Polarity dependent gate tunneling currents in dual-gate CMOSFET's","volume":"45","author":"Shi","year":"1998","journal-title":"IEEE Trans. Electron. Device"},{"issue":"June","key":"10.1016\/S0026-2692(02)00138-6_BIB12","first-page":"313","article-title":"Programming characteristics of p-channel Si nano-crystal memory","volume":"21","author":"Han","year":"2000","journal-title":"IEEE Electron. Device Lett."},{"issue":"June","key":"10.1016\/S0026-2692(02)00138-6_BIB13","doi-asserted-by":"crossref","first-page":"12802","DOI":"10.1103\/PhysRevB.39.12802","article-title":"Resonant tunneling of holes in double-barrier heterostructures in the envelope-function approximation","volume":"39","author":"Wessel","year":"1989","journal-title":"Phys. Rev. B"},{"issue":"June","key":"10.1016\/S0026-2692(02)00138-6_BIB14","doi-asserted-by":"crossref","first-page":"4034","DOI":"10.1063\/1.1379786","article-title":"Modeling and characterization of direct tunneling hole current through ultrathin gate in p-metal-oxide-semiconductor field-effect transistors","volume":"78","author":"Hou","year":"2001","journal-title":"Appl. Phys. Lett."},{"issue":"January","key":"10.1016\/S0026-2692(02)00138-6_BIB15","doi-asserted-by":"crossref","first-page":"57","DOI":"10.1103\/PhysRevLett.6.57","article-title":"Tunneling from a many-particle point of view","volume":"6","author":"Bardeen","year":"1961","journal-title":"Phys. Rev. Lett."},{"key":"10.1016\/S0026-2692(02)00138-6_BIB16","doi-asserted-by":"crossref","first-page":"1145","DOI":"10.1088\/0022-3719\/19\/8\/013","article-title":"Transfer Hamiltonian description of resonant tunneling","volume":"19","author":"Pnyne","year":"1986","journal-title":"J. Phys. C: Solid State Phys."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269202001386?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269202001386?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,7,5]],"date-time":"2024-07-05T18:20:31Z","timestamp":1720203631000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026269202001386"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2003,1]]},"references-count":16,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2003,1]]}},"alternative-id":["S0026269202001386"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2692(02)00138-6","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2003,1]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Numerical investigation of characteristics of p-channel Ge\/Si hetero-nanocrystal memory","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/S0026-2692(02)00138-6","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"converted-article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2002 Elsevier Science Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}]}}