{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,22]],"date-time":"2025-02-22T00:49:22Z","timestamp":1740185362030,"version":"3.37.3"},"reference-count":14,"publisher":"Elsevier BV","issue":"1","license":[{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2003,1,1]],"date-time":"2003-01-01T00:00:00Z","timestamp":1041379200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"funder":[{"DOI":"10.13039\/501100001849","name":"Defence Research and Development Organisation","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100001849","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100006083","name":"Ministry of Defence","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100006083","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2003,1]]},"DOI":"10.1016\/s0026-2692(02)00140-4","type":"journal-article","created":{"date-parts":[[2003,1,30]],"date-time":"2003-01-30T17:32:20Z","timestamp":1043947940000},"page":"77-83","update-policy":"https:\/\/doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":3,"title":["Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor"],"prefix":"10.1016","volume":"34","author":[{"given":"N.","family":"Kaushik","sequence":"first","affiliation":[]},{"given":"A.","family":"Kranti","sequence":"additional","affiliation":[]},{"given":"M.","family":"Gupta","sequence":"additional","affiliation":[]},{"given":"R.S.","family":"Gupta","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"year":"1987","series-title":"Modern Power Devices","author":"Baliga","key":"10.1016\/S0026-2692(02)00140-4_BIB1"},{"year":"1989","series-title":"Power MOSFETs: Theory and Applications","author":"Grant","key":"10.1016\/S0026-2692(02)00140-4_BIB2"},{"issue":"4","key":"10.1016\/S0026-2692(02)00140-4_BIB3","doi-asserted-by":"crossref","first-page":"1141","DOI":"10.1109\/16.52453","article-title":"Optimally scaled low-voltage vertical power MOSFET's for high frequency power conversion","volume":"37","author":"Shenai","year":"1990","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"8","key":"10.1016\/S0026-2692(02)00140-4_BIB4","doi-asserted-by":"crossref","first-page":"407","DOI":"10.1109\/55.936359","article-title":"Oxide-bypassed VDMOS (OBVDMOS): an alternative to superjunction high voltage MOS power devices","volume":"22","author":"Liang","year":"2001","journal-title":"IEEE Electron. Dev. Lett."},{"issue":"12","key":"10.1016\/S0026-2692(02)00140-4_BIB5","doi-asserted-by":"crossref","first-page":"1693","DOI":"10.1109\/T-ED.1984.21773","article-title":"Optimum design of power MOSFET's","volume":"31","author":"Hu","year":"1984","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"12","key":"10.1016\/S0026-2692(02)00140-4_BIB6","doi-asserted-by":"crossref","first-page":"2197","DOI":"10.1109\/16.544392","article-title":"Charge-pumping characterization of SiO2\/Si interface in virgin and irradiated power VDMOSFET's","volume":"43","author":"Habas","year":"1996","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"3","key":"10.1016\/S0026-2692(02)00140-4_BIB7","doi-asserted-by":"crossref","first-page":"555","DOI":"10.1109\/16.368054","article-title":"Effect of bipolar turn-on on the static current\u2013voltage characteristics of scaled vertical power DMOSFET's","volume":"42","author":"Fischer","year":"1995","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"6","key":"10.1016\/S0026-2692(02)00140-4_BIB8","doi-asserted-by":"crossref","first-page":"1007","DOI":"10.1109\/16.502137","article-title":"Dynamics of power MOSFET switching under clamped inductive loading conditions","volume":"43","author":"Fischer","year":"1996","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"10","key":"10.1016\/S0026-2692(02)00140-4_BIB9","doi-asserted-by":"crossref","first-page":"1717","DOI":"10.1109\/16.536818","article-title":"Trends in power semiconductor devices","volume":"43","author":"Baliga","year":"1996","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"6","key":"10.1016\/S0026-2692(02)00140-4_BIB10","doi-asserted-by":"crossref","first-page":"1280","DOI":"10.1109\/16.842974","article-title":"A novel high-voltage sustaining structure with buried oppositely doped regions","volume":"47","author":"Chen","year":"2000","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"11","key":"10.1016\/S0026-2692(02)00140-4_BIB11","doi-asserted-by":"crossref","first-page":"1710","DOI":"10.1109\/T-ED.1986.22732","article-title":"Study of the quasi-saturation effect in VDMOS transistors","volume":"33","author":"Darwish","year":"1986","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"3","key":"10.1016\/S0026-2692(02)00140-4_BIB12","doi-asserted-by":"crossref","first-page":"797","DOI":"10.1109\/16.47788","article-title":"Physical DMOST modeling for high-voltage IC CAD","volume":"37","author":"Kim","year":"1990","journal-title":"IEEE Trans. Electron. Dev."},{"issue":"1","key":"10.1016\/S0026-2692(02)00140-4_BIB13","doi-asserted-by":"crossref","first-page":"85","DOI":"10.1016\/0038-1101(93)90072-X","article-title":"Analysis of the quasi-saturation behavior considering the drain-to-source voltage and cell-spacing effects for a vertical DMOS power transistor","volume":"36","author":"Lou","year":"1993","journal-title":"Solid-State Electron."},{"issue":"3","key":"10.1016\/S0026-2692(02)00140-4_BIB14","doi-asserted-by":"crossref","first-page":"676","DOI":"10.1109\/16.199343","article-title":"An analytical quasi-saturation model for vertical DMOS power transistors","volume":"40","author":"Lou","year":"1993","journal-title":"IEEE Trans. Electron. Dev."}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269202001404?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269202001404?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,7,5]],"date-time":"2024-07-05T18:20:35Z","timestamp":1720203635000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026269202001404"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2003,1]]},"references-count":14,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2003,1]]}},"alternative-id":["S0026269202001404"],"URL":"https:\/\/doi.org\/10.1016\/s0026-2692(02)00140-4","relation":{},"ISSN":["1879-2391"],"issn-type":[{"type":"print","value":"1879-2391"}],"subject":[],"published":{"date-parts":[[2003,1]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/S0026-2692(02)00140-4","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"converted-article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2002 Elsevier Science Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}]}}